SST11CP15

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©2013 Silicon Storage Technology, Inc. DS70005016C 08/13

Data Sheet

www.microchip.com

Features

• Small package size

– 12-contact UQFN (2mm x 2mm x 0.6mm max thick-ness)

• Wide operating voltage range

– VCC = 3.0–5.0V

• High linear output power:

– 802.11a OFDM Spectrum mask compliance up to 23dBm at 3V.

– Added EVM ~3% up to 20 dBm, typically at 5V VCC,across 5.1-5.9 GHz for 54 Mbps 802.11a signal

• High power-added efficiency/low operating currentfor 54 Mbps 802.11a applications

– ~11% @ POUT = 19 dBm for 54 Mbps, 3.3V VCC

• Gain:– Typically 26 dB gain across broadband

4.9-5.9 GHz, 3.3V VCC

• Low idle current

– ~120 mA ICQ

• High speed power-up/-down

– Turn on/off time (10%~90%)

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3

4.9-5.9 GHz High-Linearity Power AmplifierSST11CP15

Data Sheet

Functional Blocks

Figure 1: Functional Block Diagram

1

1428 B1.0

2

3

9

8

7

12 11 10

4 5 6

RFIN

VCCb

VREF1

V R E F 2

V R E F 3

D E T

NC

RFOUT

GND

V C C 3

V C C 2

V C C 1

Input

Match

BiasControl

Power

Detection

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4


Data Sheet

Pin Assignments

Figure 2: Pin Assignments for 12-contact UQFN

1

1428 P1.0

2

3

9

8

7

12 11 10

4 5 6

RFIN

VCCb

VREF1

V R E F 2

V R E F 3

D E T

NC

RFOUT

GND

V C C 3

V C C 2

V C C 1

Top View(Contacts facing down)

RF and DC GND

0

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Data Sheet

Pin Descriptions

Table 1: Pin Description

Symbol Pin No. Pin Name Type1

1. I=Input, O=Output

Function

GND 0 Ground The center pad should be connected to RF ground with several

low inductance, low resistance vias.

RFIN 1 I RF input, DC decoupled

VCCb 2 Power Sup-

ply

PWR Supply voltage for bias circuit

VREF1 3 PWR Current Control



DET 6 O On-chip power detector

NC 7 No Connec-tion

Unconnected pin

RFOUT 8 O RF Output

GND 9 Ground Ground (NC is acceptable)

VCC3 10 Power Sup-

ply

PWR Power supply, 3rd stage

VCC2 11 Power Sup-

ply

PWR Power supply, 2nd stage

VCC1 12 Power Sup-

ply

PWR Power supply, 1st stage

T1.1 75016

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6


Data Sheet

Electrical Specifications

The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and

current specifications. Refer to Figures 3 through12 for the RF performance.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “AbsoluteMaximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only andfunctional operation of the device at these conditions or conditions greater than those defined in theoperational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-ditions may affect device reliability.)

Supply Voltage at pins 2, 10, 11, 12 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V

DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA

Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20ºC to +85ºC

Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC

Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºCMaximum Output Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 dBm

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Table 2: Operating Range

Range Ambient Temp VCC

Industrial -10°C to +85°C 3.3V-5.0V

T2.1 75016

Table 3: DC Electrical Characteristics

Symbol Parameter Min. Typ Max. UnitVCC Supply Voltage at pins 2, 10, 11, 12 2.7 3.3 5.0 V

ICC Supply Current @ POUT = 18 dBm

VCC = 3.3V 220 mA

VCC = 4.2V 240 mA

VCC = 5.0V 290 mA

ICQ VCC quiescent current

VCC = 3.3V 135 mA

VCC = 4.2V 170 mA

VCC = 5.0V 175 mA

IOFF Shut down current 1.0 10 µA

VREG Reference Voltage for recommended application 2.85 VT3.0 75016

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Data Sheet

Table 4: AC Electrical Characteristics for Configuration

Symbol Parameter Min Typ Max Unit

FL-U Frequency range 4.9 5.9 GHzLinear Power Output power with 3% EVM at 54 Mbps OFDM signal

VCC = 3.3V 18 dBm

VCC = 5.0V 20 dBm

ACPRA Output power level with 802.11a mask compliance

VCC = 3.3V 23 dBm

VCC = 5.0V 23 dBm

Gain Power gain from 4.9–5.9 GHz

VCC = 3.3V 26 dB

VCC = 5.0V 22 dB

T4.1 75016

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Data Sheet

Typical Performance Characteristics

Test Conditions: VCC = 3.3V, TA = 25°C, VREG = 2.85V unless otherwise noted

EVM for 54 Mbps Operation using data plus sequence test configuration

Figure 3: EVM versus Output Power, VCC = 3.3V, VREG = 2.85

Figure 4: Power Supply Current versus Output Power, VCC = 3.3V, VREG = 2.85

1428 F4.1

EVM versus Output Power

0

1

2

3

4

5

6

7

8

9

10

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

Output Power (dBm)

E V M

( % )

Freq=4.9 GHz

Freq=5.1 GHz

Freq=5.5 GHz

Freq=5.825 GHz

1428 F5.1

60708090

100110120130140150160170180190200210220230240250260270280290300

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

S u p p l y

C u r r e n t ( m A )

Output Power (dBm)

Supply Current versus Output Power

Freq=4.9 GHz

Freg=5.1 GHz

Freq=5.5 GHz

Freq=5.825 GHz

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Data Sheet

Figure 5: Power Gain versus Output Power, VCC = 3.3V, VREG = 2.85

Figure 6: Maximum Mask Compliance, VCC = 3.3V, VREG = 2.85, Frequency = 5.5 GHz atPOUT = 23.3 dBm with ICC = 390 mA

1428 F7.1

10111213141516

171819202122232425262728293031323334

10 11 12 13 14 15 16 17 18 19 20 21

P o w e r G a i n ( d B )

Output Power (dBm)

Power Gain versus Output Power

Freq=4.9 GHz

Freg=5.1 GHz

Freq=5.5 GHz

Freq=5.825 GHz

1428 F6.0

Spectrum Mask 802.11a (5500MHz)

-80

-70

-60

-50

-40

-30

-20

-10

0

5.45 5.55

Frequency(GHz)

A m p l i t u d e ( d B )

Spectrum

Relative limit

5.5

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Data Sheet

Figure 7: Detector Voltage vs Output Power, VCC = 3.3V, VREG = 2.85

Figure 8: PAE vs Output Power, VCC = 3.3V, VREG = 2.85

1428 F8.1

0.30

0.40

0.50

0.60

0.70

0.80

0.90

1.00

1.10

1.20

1.30

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

D e t e c t o r V o l t a g e ( V )

Output Power (dBm)

Detector Voltage versus Output Power

Freq=4.9 GHz

Freq=5.5 GHz

Freq=5.5 GHz

Freq=5.825 GHz

1428 F9.1

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

P A E ( % )

Output Power (dBm)

PAE versus Output Power

Freq=4.9 GHz

Freg=5.1 GHz

Freq=5.5 GHz

Freq=5.825 GHz

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Data Sheet

Typical Performance characteristics

Test Conditions: VCC = 5.0V, TA = 25°C, VREG = 2.90V unless otherwise noted

Figure 9: EVM versus Output Power, VCC = 5.0V, VREG = 2.90V

Figure 10:DC Current versus Output Power, VCC = 5.0V, VREG = 2.90V

1428 F13.0

0

1

2

3

4

5

6

7

8

9

10

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

E V M

( % )

Output Power (dBm)

EVM versus Output Power

4920

5180

5500

5850

1428 F14.0

100120140160

180200220240260280300320340360380400420

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

S u p p l y C u r r e n t ( m A )

Output Power (dBm)

Supply Current versus Output Power

4920 5180

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Data Sheet

Figure 11:Gain versus Output Power, VCC = 5.0V, VREG = 2.90V

1428 F12.0

0

2

46

8

10

12

14

16

18

20

22

24

26

28

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

P o w e r G a i n ( d B )

Output Power (dBm)

Power Gain versus Output Power

4920

5180

5500

5850

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Data Sheet

Figure 12:S-Parameters

1428 S-Parms.1.0

S12 versus Frequency

-80

-70

-60

-50

-40

-30

-20

-10

0

0.0 1.0 2 .0 3 .0 4 .0 5.0 6 .0 7.0 8 .0 9 .0 10 .0 11.0 12 .0 13 .0

Frequency (GHz)

S 1 2 ( d B )


-40

-35

-30

-25

-20

-15

-10

-5

0

0 .0 1.0 2 .0 3 .0 4 .0 5.0 6 .0 7.0 8 .0 9 .0 10 .0 11.0 12 .0 13 .0

Frequency (GHz)

S 1 1 ( d B )

-40

-30

-20

-10

0

10

20

30

40

0.0 1.0 2 .0 3 .0 4 .0 5.0 6 .0 7.0 8 .0 9 .0 10 .0 11.0 12 .0 13 .0-40

-35

-30

-25

-20

-15

-10

-5

0

0 .0 1.0 2 .0 3 .0 4 .0 5.0 6 .0 7.0 8 .0 9 .0 10 .0 11.0 12 .0 13 .0


Frequency (GHz)

S 2 2 ( d B )


Frequency (GHz)

S 2 1 ( d B )

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Data Sheet

Figure 13:Typical Application for High-Linearity 802.11a/n Application (VCC = 3.3V,

VREG=2.85V)

1428 F11.1

1

2

3

9

8

7

12 11 10

4 5 6

50Ω

RFIN

50Ω

35 mil from the edge of the package

0Ω

105Ω

DET

VREG

68Ω Test ConditionsVREG = 2.85VVCC=VCCb=3.3V

0.7 pF

0.1 µF

0.1 pF

RFOUT

VCC

4.7 µF0.1 µF0.1 µF

200 pF

11CP15

2X2 12L UQFN

Top ViewVCCb

0.1 µF

Note: The SST11CP15 has on-chip DC-blocking caps for RF ports

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Data Sheet

Figure 14:Typical Application for High-Linearity 802.11a/n Application (VCC = 5.0V,VREG=2.90V)

1428 F15.0

1

2

3

9

8

7

12 11 10

4 5 6

50Ω

RFIN

50Ω

Capacitor placement is measured from

edge of PA to edge of capacitor.

0Ω

87Ω

DET

VREG

87Ω Test ConditionsVREG = 2.9VVCC=VCCb=5.0V

50Ω

146mil

12mil

20mil

0.7 pF

0.1 µF

RFOUT

VCC

4.7 µF0.1 µF0.1 µF

200 pF

11CP15

2X2 12L UQFN

Top ViewVCCb

0.1 µF

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Data Sheet

Product Ordering Information

Valid combinations for SST11CP15

SST11CP15-QUBE

SST11CP15 Evaluation Kits

SST11CP15-QUBE-K

Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST

sales representative to confirm availability of valid combinations and to determine availability of new combi-nations.

SST 11 CP 15 - QUBE

XX XX XX - XXXX

Environmental Attribute

E1 = non-Pb contact (lead) finish

Package Modifier

B = 12 contact

PackageTypeQU = UQFN

Product Family Identifier

ProductTypeP = Power Amplifier

VoltageC = 3.0-5.0V

Frequency of Operation1 = 4.9-5.9 GHz

Product Line1 = SST Communications

1. Environmental suffix “E” denotes non-Pb sol-

der. SST non-Pb solder devices are “RoHSCompliant”.

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Data Sheet

Packaging Diagrams

Figure 15:12-contact Ultra-thin Quad Flat No-lead (UQFN)SST Package Code: QUB

12-uqfn-2x2-QUB-2.0

0.4 BSC

See notes2 and 3

Pin #1

0.25

0.15

0.92

0.34

0.24

TOP VIEW BOTTOM VIEWSIDE VIEW

1mm

0.265

0.165

Pin #1(laser

engravedsee note 2)

2.00 ±0.05

2.00 ±0.05

0.075

Note: 1. Similar to JEDEC JEP95 UQFN/USON variants, though number of contacts and some dimensions are different.

2. The topside pin #1 indicator is laser engraved; its approximate shape and location is as shown.

3. From the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer.

4. The external paddle is electrically connected to the die back-side and to VSS.

This paddle must be soldered to the PC board; it is required to connect this paddle to the V SS of the unit.

Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of

the device.

5. Untoleranced dimensions are nominal target dimensions.

6. All linear dimensions are in millimeters (max/min).

0.60

0.50

0.05 Max

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Data Sheet

Table 5:Revision History

Revision Description Date

00 • Initial Release of Data Sheet Jul 201001 • Updated Features on page 1; Table 3 on page 6; and Figures 4, 5, 7,

8, and 14Jan 2011

A • Updated Features on page 1, Table 3 on page 6, and Table 4 onpage 7

• Added Figures -11 and 14

• Applied new document format

• Released document under letter revision system

• Updated spec number from Sy1428 to DS76016

Aug 2011

B • Updated Figure 15 to reflect new Pin 1 indicator Jul 2012

C • Fixed figure references in history table and “Electrical Specifications”

on page 6 to point to the correct figures

Aug 2013

© 2013 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved.

SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Tech-nology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks andregistered trademarks mentioned herein are the property of their respective owners.

Specifications aresubject to change without notice. Refer to www.microchip.com for themost recent documentation. For the most current

package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.Memory sizes denote raw storage capacity; actual usable capacity may be less.

SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions ofSale.

For sales office locations and information, please see www.microchip.com.

Silicon Storage Technology, Inc.

A Microchip Technology Company

www.microchip.com

ISBN:978-1-62077-406-9

Documents

SST11CP15