Dual E nhancement Mode F ield E ffect T rans istor ( N and P C hannel)

J uly 27 2006 ver1.1

AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted)

P arameter S ymbol N-C hannel P -C hannel Unit

Drain-S ource Voltage V DS V

G ate-S ource Voltage V G S V

Drain C urrent-C ontinuous @ T c

-P ulsed

ID

11

A

A

A

W

IDM

Drain-S ource Diode F orward C urrent IS

Maximum P ower Diss ipation P D

Operating J unction and S torageTemperature R ange T J , T S T G -55 to 175 C

a

40

8

-40

-12

-6

1

P R ODUC T S UMMAR Y

V DS S ID R DS (ON) ( m Ω ) Max

40V 16A30 @ V G S = 10V

40 @ V G S = 4.5V

(N-C hannel) P R ODUC T S UMMAR Y

V DS S ID

-40V -12A48 @ V G S = -10V

65 @ V G S = -4.5V

(P -C hannel)

S amHop Microelectronics C orp.

20

-50

S T U407D

R DS (ON) ( m Ω ) Max

16

50

25 C

70 C

T c= 25 C

T c= 70 C 7.7

13.8 -10 A

T HE R MAL C HAR AC T E R IS T IC S

T hermal R es istance, J unction-to-C ase

T hermal R es istance, J unction-to-Ambient

R J C 13.6

120R J A

/WC

/WC

N-ch P -ch T O-252-4L

D1/D2

S 1G 1

S 2G 2

20

G 1

D1

S 1

G 2

D2

S 2

S T U407D=

P arameter S ymbol C ondition Min Typ Max Unit

OF F C HAR AC T E R IS T IC S

Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 40 V

Zero G ate Voltage Drain C urrent IDS S V DS 32V, V G S 0V= = 1

G ate-B ody Leakage IG S S V G S 20V, V DS 0V= = 10 uA

ON C HAR AC T E R IS T IC S a

G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= V

Drain-S ource On-S tate R es istance R DS (ON)V G S 10V, ID 8A

V G S 4.5V, ID 6A 40

On-S tate Drain C urrent ID(ON) V DS = 5V, V G S = 4.5V A

SF orward Transconductance F Sg V DS 10V, ID 8A

DY NAMIC C HAR AC T E R IS T IC S b

Input C apacitance C IS S

C R S S

C OS SOutput C apacitance

R everse Transfer C apacitance

V DS =20V, V G S = 0Vf =1.0MHZ

P F

P F

P F

S WIT C HING C HAR AC T E R IS T IC S b

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OF F )

tf

V DD = 20VID = 3 A V G S = 10VR G E N = 3 ohm

ns

ns

ns

ns

Total G ate C harge

G ate-S ource C harge

G ate-Drain C harge

Qg

Qgs

Qgd

V DS =20V, ID = 8 AV G S =10V

nC

nC

nC

C

F all T ime

=

=

=

=

= =

2

5

30

uA

m ohm

m ohm

N-C hannel E L E C TR IC AL C HAR AC TE R IS TIC S (TA 25 C unles s otherwis e noted)

V DS =20V, ID =8A,V G S =10V

nC

V DS =20V, ID =8A,V G S =4.5V

20

70

120

735

15

10

26

15

13

3.8

2.0

7.2

15

ohmR gG ate res is tance V G S =0V, V DS = 0V , f=1.0MHZ 0.36

1 1.8 3

22

30

S T U407D=

P arameter S ymbol C ondition Min Typ Max Unit

OF F C HAR AC T E R IS T IC S

Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID -250uA= -40 V

Zero G ate Voltage Drain C urrent IDS S V DS -32V, V G S 0V= = -1

G ate-B ody Leakage IG S S V G S 20V, V DS 0V= = 10 uA

ON C HAR AC T E R IS T IC S a

G ate T hreshold Voltage V G S (th) V DS V G S , ID = -250uA= V

Drain-S ource On-S tate R es istance R DS (ON)V G S -10V, ID -6A

V G S -4.5V, ID -4A 65

On-S tate Drain C urrent ID(ON) V DS = -5V, V G S = -10V A

SF orward Transconductance F Sg V DS -10V, ID -6A

DY NAMIC C HAR AC T E R IS T IC S b

Input C apacitance C IS S

C R S S

C OS SOutput C apacitance

R everse Transfer C apacitance

V DS =-20V, V G S = 0Vf =1.0MHZ

P F

P F

P F

S WIT C HING C HAR AC T E R IS T IC S b

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OF F )

tf

V DD = -20VID = -3A V G S = -10VR G E N = 3 ohm

ns

ns

ns

ns

Total G ate C harge

G ate-S ource C harge

G ate-Drain C harge

Qg

Qgs

Qgd

V DS =-20V, ID = -6 AV G S =-10V

nC

nC

nC

C

F all T ime

=

=

=

=

= =

3

5

48

uA

m ohm

m ohm

P-C hannel E L E C TR IC AL C HAR AC TE R IS TIC S (TA 25 C unles s otherwis e noted)

V DS =-20V, ID =-6A,V G S =-10V

nC

VDS =-20V, ID =-6A,VGS =-4.5V

-20

75

135

920

15

25

60

13

12

4.0

2

7.2

9

ohmR gG ate res is tance V G S =0V, V DS = 0V , f=1.0MHZ 3.5

-1 -1.6 -3

40

50

F igure 2. Transfer C haracteris tics

F igure 4. On-R es istance Variation with Drain C urrent and Temperature

ID, Drain C urrent (A)

V G S , G ate-to-S ource Voltage (V )

RD

S(o

n)

(m Ω

)

On

-Re

sist

an

ce

ID,

Dra

in C

urr

en

t (A

)

4

RD

S(O

N),

No

rma

lize

d

60

50

40

30

20

10

0

-55 C

15

9

6

3

00 0.8 1.6 2.4 3.2 4.0 4.8

25 C

2.0

1.8

1.6

1.4

1.2

1.0

0.00 25 50 75

T j( C )

100 125

V G S =10V

ID=8A

T j, J unction T emperature ( C )

F igure 1. Output C haracteris tics

V DS , Drain-to-S ource Voltage (V )

ID,

Dra

in C

urr

en

t(A

)

25

20

15

10

5

00 0.5 1 1.5 2 2.5 3

V G S =3V

V G S =3.5V

T j=125 C

V G S =10V

F igure 3. On-R es istance vs . Drain C urrent and G ate V oltage

6 12 18 24 301

V G S =10V

V G S =4.5V

V G S =4.5V

ID=6A

V G S =8V

Parameter Symbol Condition Min Typ Max Unit

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage VSDVGS = 0V, Is =8A N-Ch 0.94 1.2

-0.87 -1.2VGS = 0V, Is =-6A P-Ch V

b

C

Notes

b.Guaranteed by design, not subject to production testing.a.Pulse Test:Pulse Width 300μs, Duty Cycle 2%.＜ ＜

N-Channel

V G S =4.5V

12

150

S T U407D

30

F igure 6. B reakdown V oltage V ariation with T emperature

Vth

, N

orm

aliz

ed

Ga

te-S

ou

rce

Th

resh

old

Vo

ltag

e

BV

DS

S,

No

rma

lize

dD

rain

-So

urc

e B

rea

kdo

wn

Vo

ltag

eIs

, Sou

rce-

drai

n cu

rren

t (A

)

F igure 8. B ody Diode F orward V oltageV ariation with S ource C urrent

V S D, B ody Diode F orward V oltage (V )

T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

5

6

20.0

10.0

1.00.4 0.6 0.8 1.0 1.2 1.4

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5-50 -25 0 25 50 75 100 125 150

V DS =V G S

ID=250uA

-50 -25 0 25 50 75 100 125 150

1.40

1.30

1.20

1.10

1.00

0.90

0.80

ID=250uA

V G S , G ate- S ource Voltage (V )

RD

S(o

n)

(m Ω

)

60

50

40

30

20

10

0

F igure 7. On-R es istance vs . G ate-S ource V oltage

2 4 6 8 100

F igure 5. G ate T hres hold V ariation with T emperature

25 C

125 C

75 C

25 C

75 C 125 C

ID=8A

S T U407D

Po

we

r (W

)

200

160

120

80

40

00.0001 0.001 0.01 0.1 1

F igure 9. S ingle P uls e P ower R ating J unction-to-C as e

T j(max)=175 C

T A=25 C

6

F igure 13. Maximum S afe O perating Area

V DS , Drain-S ource V oltage (V )

ID,

Dra

in C

urr

en

t (A

)

100

10

0.50.1

1

1 10 30 60

V G S =10VS ingle P uls e

T c=25 C

R DS (ON) L

imit

DC1s

100ms

10ms

1ms

80

VG

S, G

ate

to S

ourc

e V

olta

ge (

V)

F igure 11. G ate C harge Q g, T otal G ate C harge (nC )

10

8

6

4

2

00 2 4 6 8 10 12 14 16

V DS =20V

ID=8A

F igure 10. C apacitance

V DS , Drain-to S ource Voltage (V )

C,

Ca

pa

cita

nce

(p

F)

0 5 10 15 20 25 30

1200

1000

800

600

400

200

0

C iss

C oss

C rss

F igure 12.s witching characteris tics

R g, G ate R es is tance (Ω)

Sw

itch

ing

Tim

e (

ns) 100

10

1

1

6 10 60 100

60

600300

300

T D(on)

T D(off)

T r

T f

V DS =20V ,ID=1A V G S =10V

6

S T U407D T

rans

ient

The

rmal

Impe

danc

e

S quare Wave P ulse Duration (sec)

F igure 14. Normalized T hermal T rans ient Impedance C urve

r(t)

,Nor

mal

ized

Effe

ctiv

e

2

1

0.1

0.01

10-5

10-4

10-3

10-2

10-1

1 10

D=0.5

0.2

0.1

0.05

0.02

0.01

P DM

t1

t2

1. RθJ A (t)=r (t) * RθJ A

2. RθJ A=S ee Datasheet3. T J M-T A = P DM* RθJ A (t)4. Duty C ycle, D=t1/t2

S ING LE P ULS E

S T U407D

7

P-C hannel

F igure 2. Transfer C haracteris tics

F igure 4. On-R es istance Variation with Drain C urrent and Temperature

-ID, Drain C urrent (A)

-V G S , G ate-to-S ource Voltage (V )

RD

S(o

n)

(m Ω

)

On

-Re

sist

an

ce

-ID

, D

rain

Cu

rre

nt

(A)

RD

S(O

N),

No

rma

lize

d

120

100

80

60

40

20

0

-55 C

15

9

6

3

00 0.8 1.6 2.4 3.2 4.0 4.8

1.5

1.4

1.3

1.2

1.1

1.0

0.00 25 50 75

T j( C )

150100 125

V G S =-4.5V

ID=-4A

T j, J unction T emperature ( C )

F igure 1. Output C haracteris tics

-V DS , Drain-to-S ource Voltage (V )

-ID

, D

rain

Cu

rre

nt(

A)

20

16

12

8

4

00 0.5 1 1.5 2 2.5 3

V G S =-3.5V

V G S =-8V

T j=125 C

F igure 3. On-R es istance vs . Drain C urrent and G ate V oltage

4 8 12 16 201

V G S =-10V

V G S =-4.5V

V G S =-10V

ID=-6A

V G S =-4.5VV G S =-10V

12

25 C

V G S =-3V

F igure 6. B reakdown V oltage V ariation with T emperature

Vth

, N

orm

aliz

ed

Ga

te-S

ou

rce

Th

resh

old

Vo

ltag

e

BV

DS

S,

No

rma

lize

dD

rain

-So

urc

e B

rea

kdo

wn

Vo

ltag

e-I

s, S

ourc

e-dr

ain

curr

ent (

A)

F igure 8. B ody Diode F orward V oltageV ariation with S ource C urrent

-V S D, B ody Diode F orward V oltage (V )

T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

8

6

20.0

10.0

1.00.4 0.6 0.8 1.0 1.2 1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6-50 -25 0 25 50 75 100 125 150

V DS =V G S

ID=-250uA

-50 -25 0 25 50 75 100 125 150

1.15

1.10

1.05

1.00

0.95

0.90

0.85

ID=-250uA

-V G S , G ate- S ource Voltage (V )

RD

S(o

n)

(m Ω

)

120

100

80

60

40

20

0

F igure 7. On-R es istance vs . G ate-S ource V oltage

2 4 6 8 100

F igure 5. G ate T hres hold V ariation with T emperature

25 C

125 C

75 C

25 C

75 C 125 C

ID=-6A

S T U407D

Po

we

r (W

)

200

160

120

80

40

00.0001 0.001 0.01 0.1 1

F igure 9. S ingle P uls e P ower R ating J unction-to-C as e

T j(max)=175 C

T A=25 C

6

-VG

S, G

ate

to S

ourc

e V

olta

ge (

V)

F igure 11. G ate C harge

Q g, T otal G ate C harge (nC )

10

8

6

4

2

00 2 4 6 8 10 12 14 16

V DS =-20V

ID=-6A

F igure 10. C apacitance

-V DS , Drain-to S ource Voltage (V )

C,

Ca

pa

cita

nce

(p

F)

0 5 10 15 20 25 30

1200

1000

800

600

400

200

0

C iss

C oss

C rss

9

F igure 13. Maximum S afe O perating Area

-V DS , Drain-S ource V oltage (V )

-ID

, D

rain

Cu

rre

nt

(A)

70

50

10

1

0.03

0.1 1 10 30 60

R DS (ON) L

imit

V G S =-10VS ingle P uls e

T c=25 C

10ms

100ms1sDC

S T U407D T

rans

ient

The

rmal

Impe

danc

e

S quare Wave P ulse Duration (sec)

F igure 14. Normalized T hermal T rans ient Impedance C urve

r(t)

,Nor

mal

ized

Effe

ctiv

e

2

1

0.1

0.01

10-5

10-4

10-3

10-2

10-1

1 10

D=0.5

0.2

0.1

0.05

0.02

0.01

P DM

t1

t2

1. RθJ A (t)=r (t) * RθJ A

2. RθJ A=S ee Datasheet3. T J M-T A = P DM* RθJ A (t)4. Duty C ycle, D=t1/t2

S ING LE P ULS E

F igure 12.s witching characteris tics

R g, G ate R es is tance (Ω)

Sw

itch

ing

Tim

e (

ns) 100

10

1

1

6 10 60 100

60

600300

300

T D(on)

T D(off)

T r

T f

V DS =20V ,ID=1A V G S =10V

10

S T U407D

A

B

C

M

D

GS P

H

J

K

L

MillimetersMIN MAX

A 6.40 6.80B 5.2 5.50C 6.80 10.20D 2.20 3.00PS 0.50 0.80G 0.40 0.60H 2.20 2.40J 0.45 0.60K 0 0.15L 0.90 1.50M 5.40 5.80

REF .

1.27 REF.

TO-252-4L

P A C K A G E OUT L INE DIME NS IONS

TO-252-4LTO-252-4L Carrier Tape

TO-252-4L Reel

Tape and Reel Data

UNIT:

11

S T U407D

4

6