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GaN TECHNOLOGY
GH15 GaN process is optimized up to 35GHz for high power, high PAE and high linearity. The Gallium Nitride power density combined with a thermal dissipative SiC substrate brings to 3.5W/mm at 30GHz. This MMIC process includes MIM capacitors, inductors, air bridges, metallic resistors, via through the substrate and two metal layers for interconnections.
GH15 is the ideal process to design:• High power and high PAE amplifiers
up to Ka-band• Robust LNA• High Power switches
Build your own solution with UMSwww.ums-gaas.com
The 0.15µm GaN Hemt process
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Contact us:
Worldwide distributor: Richardson RFPDwww.richardsonrfpd.com
UMS SAS – EMEA,Ph: +33 1 69 86 32 [email protected]
UMS USA, Inc. - America,Ph: +1 781 791 [email protected]
UMS - Asia, Ph: +86 21 6103 1703 [email protected]
www.ums-gaas.com
Process Design Kit (PDK) includes non-linear electro-thermal models, noise model, diodes & switches models, passive models, all with associated library elements.
Applications targeted with GH15:• Pt to Pt radio• 5G• Satcom• Radar• Broadband amplification• Hi-Rel products
Element Typical Value
Vt -3,2 V
Idss 1.2 A/mm
Ids+ 1.4 A/mm
Gm 390 mS/mm
VdsDC 20 V
Ft > 35 GHz
Fmax > 100 GHz
MIM density 175 pF/mm2
Metallic resistors 30 and 1000 Ohms/sq
Via-holes available on 70-µm substrate thickness
Process main features