The top documents tagged [ieee ted]

SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 1 Evaluation of HiCUM for Modeling DC, S-parameter and
Documents SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 1 Evaluation of HiCUM for Modeling DC, S-parameter and

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Evolution and Prospect of Single-Photon Avalanche Diodes and Quenching Circuits Politecnico di Milano, Dip. Elettronica e Informazione, Milano, Italy S
Documents Evolution and Prospect of Single-Photon Avalanche Diodes and Quenching Circuits Politecnico di Milano, Dip. Elettronica e Informazione, Milano, Italy S

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Laboratory for Sub-100nm Design Department of Electrical and Computer Engineering Novel dual-V th independent-gate FinFET circuits Masoud Rostami and Kartik
Documents Laboratory for Sub-100nm Design Department of Electrical and Computer Engineering Novel dual-V th independent-gate FinFET circuits Masoud Rostami and Kartik

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IndDG: A New Model for Independent Double-Gate MOSFET Santanu Mahapatra Nano-Scale Device Research Lab Indian Institute of Science Bangalore Email: santanu@cedt.iisc.ernet.in
Documents IndDG: A New Model for Independent Double-Gate MOSFET Santanu Mahapatra Nano-Scale Device Research Lab Indian Institute of Science Bangalore Email: [email protected]

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EE698E Term Paper
Documents EE698E Term Paper

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SiNANO Workshop Carrier mobility enhancement in strained silicon germanium channels David Leadley University of Warwick
Documents SiNANO Workshop Carrier mobility enhancement in strained silicon germanium channels David Leadley University of Warwick

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1 SOI BiCMOS an Emerging Mixed-Signal Technology Platform Tak H. Ning
Documents 1 SOI BiCMOS an Emerging Mixed-Signal Technology Platform Tak H. Ning

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1 Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Uttam Singisetti*, Man Hoi Wong, Sansaptak Dasgupta, Nidhi,
Documents 1 Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Uttam Singisetti*, Man Hoi Wong, Sansaptak Dasgupta, Nidhi,

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Part 0 Intro
Documents Part 0 Intro

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IEEE Central NC EDS/MTT/SSC Society Friday, Nov. 5th, 2010 The Nanoscale MOSFET: Physics and Limits Mark Lundstrom 1 Electrical and Computer Engineering
Documents IEEE Central NC EDS/MTT/SSC Society Friday, Nov. 5th, 2010 The Nanoscale MOSFET: Physics and Limits Mark Lundstrom 1 Electrical and Computer Engineering

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1 Carbon Nanotube Field-Effect Transistors Carbon Nanotube Field-Effect Transistors and their possible applications D.L. Pulfrey Department of Electrical
Documents 1 Carbon Nanotube Field-Effect Transistors Carbon Nanotube Field-Effect Transistors and their possible applications D.L. Pulfrey Department of Electrical

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From Ashcroft and Mermin, Solid State Physics.. NEMS: TOWARD PHONON COUNTING: Quantum Limit of Heat Flow. Roukes Group Cal Tech Tito
Documents From Ashcroft and Mermin, Solid State Physics.. NEMS: TOWARD PHONON COUNTING: Quantum Limit of Heat Flow. Roukes Group Cal Tech Tito

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