1. Device Modeling ReportCOMPONENTS: Power MOSFET (Professional Model)PART NUMBER: 2SJ650MANUFACTURER: SANYOBody Diode (Professional Model) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2 3. Transconductance CharacteristicCircuit Simulation Result 15 Measurement Simulation 10 gfs(S) 5 0 0.0 2.0 4.0 6.0 8.0 10.0 Drain Current ID (-A)Comparison table gfs(S) -Id(A) Error (%) Measurement Simulation 1.0000 3.550 3.707 4.42 2.0000 4.950 5.162 4.28 5.0000 7.800 7.926 1.62 10.0000 10.600 10.862 2.47 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3 4. Vgs-Id CharacteristicCircuit Simulation result -20A -15A -10A -5A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1Evaluation circuit V3 0Vdc U1 2SJ650 V2 -10 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4 5. Comparison GraphCircuit Simulation ResultSimulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 1 2.650 2.638 -0.47 2 2.850 2.863 0.45 5 3.250 3.320 2.15 10 3.750 3.851 2.69 20 4.700 4.632 -1.46 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5 6. Rds(on) CharacteristicCircuit Simulation result -6.0A -5.0A -4.0A -3.0A -2.0A -1.0A 0A 0V -100mV -200mV -300mV -400mV -500mV -600mV I(V3) V_VDSEvaluation circuit V3 0Vdc VDS U1 2SJ650 0Vdc V1 -10 0Simulation Result ID=-6A, VGS=-10V Measurement Simulation Error (%) R DS (on) m 100.000 100.000 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6 7. Gate Charge CharacteristicCircuit Simulation result -10V -9V -8V -7V -6V -5V -4V -3V -2V -1V 0V 0 5n 10n 15n 20n 25n V(W1:4) Time*1mAEvaluation circuit U1 2SJ650 ION = 0uA I2 I1 = 0 IOFF = 1mA D2 12 I2 = 1m W Dbreak TD = 0 I1 - TR = 5n + TF = 5n VDD PW = 600u W1 PER = 1000u -30 0Simulation Result VDD=-30V,ID=-12A Measurement Simulation Error (%) ,VGS=-10V Qgs nC 3.800 3.781 -0.51 Qgd nC 4.500 4.524 0.52 Qg nC 21.000 20.996 -0.02 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VSD(V) Error(%) Measurement Simulation 0 190.000 190.000 0.000 5 75.000 75.940 1.253 10 54.000 53.680 -0.593 15 43.000 43.153 0.356 20 37.000 36.783 -0.586 25 32.000 32.429 1.341 30 29.000 29.224 0.772 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8 9. Switching Time CharacteristicCircuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us V(U1:G) V(U1:D)/3 TimeEvaluation circuit L2 RL 50nH 5 U1 R1 L1 2SJ650 PER = 20u VDD PW = 10u 30nH -31Vdc TF = 5n 50 R2 TR = 5n 50 TD = 1u V2 = 20 V2 V1 = 0 0Simulation Result ID=-6A, VDD=-30V Measurement Simulation Error(%) VGS=0/-10V td(on) ns 10.000 9.999 -0.01 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9 10. Output CharacteristicCircuit Simulation result -25A -10, -8 -6 -20A -15A -4 -10A -5A VGS=-3V 0A 0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V I(V3) V_V2Evaluation circuit V3 0Vdc U1 2SJ650 V2 -5 V1 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 0V 0.3V 0.6V 0.9V 1.2V 1.5V I(Vsense) V_VDSEvaluation Circuit Vsense 0Vdc U1 2SJ650 VDS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11 12. Comparison GraphCircuit Simulation Result Measurement Simulation 10.0 Drain reverse current IDR (-A) 1.0 0.1 0.0 0 0.3 0.6 0.9 1.2 1.5 Source - Drain voltage VSD (-V)Simulation Result VSD(-V) IDR(-A) %Error Measurement Simulation 0.01 0.6000 0.5994 -0.10 0.02 0.6200 0.6193 -0.11 0.05 0.6450 0.6461 0.17 0.1 0.6650 0.6670 0.31 0.2 0.6900 0.6893 -0.10 0.5 0.7250 0.7231 -0.26 1 0.7550 0.7551 0.02 2 0.7950 0.7962 0.15 5 0.8700 0.8698 -0.02 10 0.9500 0.9494 -0.06 20 1.0700 1.0703 0.03 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.6us 0.8us 1.0us 1.1us 1.3us 1.5us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.6v U1 TD = 60ns D2SJ650_P TR = 10ns TF = 10ns PW = 1us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 18.000 18.402 2.23 trb ns 24.000 23.824 -0.73 trr ns 42.000 42.226 0.54 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13 14. Reverse Recovery Characteristic Reference MeasurementTrj=18.00(ns)Trb=24.00(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result -10mA -8mA -6mA -4mA -2mA 0A 0V -10V -20V -30V -40V -50V I(R1) V_V1Evaluation Circuit R1 0.001m U1 2SJ650 V1 0Vdc R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 16