All Rights Reserved Copyright (C) Bee Technologies Inc. 2012

1

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: MOSFET (Professional Model)

PART NUMBER: 2SK2229

MANUFACTURER: TOSHIBA

REMARK: Body Diode (Professional Model)

All Rights Reserved Copyright (C) Bee Technologies Inc. 2012

2

S

DGD

G

R2

10MEGR1

10M CGD

+

-

+

-

S1

S

D

Q1

+

-

+

-

S2

S

U12SK2229

Circuit Configuration

Equivalent Circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2012

3

MOSFET MODEL

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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4

Transconductance Characteristics

Circuit Simulation result

Comparison table

ID (A) gfs (S)

%Error Measurement Simulation

0.5 1.919 1.903 -0.83

1 2.691 2.683 -0.31

2 3.785 3.777 -0.21

5 5.950 5.918 -0.54

10 8.210 8.225 0.18

VDS=10V

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5

V_VGS

0V 2V 4V 6V 8V 10V

I(U1:2)

0A

2A

4A

6A

8A

10A

VGS

V1

10V

0

U12SK2229

Vgs-Id Characteristics

Circuit Simulation result

Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2012

6

Comparison Graph

Circuit Simulation result

Comparison table

ID (A) VGS (V)

%Error Measurement Simulation

0.2 2.295 2.263 -1.42

0.5 2.450 2.455 0.22

1 2.670 2.673 0.12

2 2.953 2.983 1.01

5 3.553 3.601 1.35

10 4.340 4.305 -0.82

VDS=10V

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7

VGS

10V

0

V1

U12SK2229

V_V1

0V 100mV 200mV 300mV 400mV 500mV

I(U1:2)

0A

1.0A

2.0A

3.0A

Rds (on) Characteristics

Circuit Simulation result

Evaluation circuit

Test condition: VGS=10(V), ID=2.5(A)

Parameter Unit Measurement Simulation %Error

RDS(on) Ω 0.120 0.120 0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2012

8

V_V1

0V 4V 8V 12V 16V 20V

I(U1:2)

0A

4A

8A

12A

16A

20A

VGS

0

V1

U12SK2229

Output Characteristics

Circuit Simulation result

Evaluation circuit

VGS = 2.5V

3

6 10

8

3.5

4

4.5

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9

Capacitance Characteristics

Simulation result

Comparison table

VDS (V) Cbd (pF)

%Error Measurement Simulation

0.1 340.000 343.400 1.00

0.2 330.000 325.050 -1.50

0.5 285.000 284.950 -0.02

1 243.000 244.013 0.42

2 196.000 199.500 1.79

5 147.000 144.940 -1.40

10 113.000 111.100 -1.68

20 87.000 84.200 -3.22

50 56.000 57.880 3.36

60 51.700 53.860 4.18

Simulation

Measurement

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10

Time*1mA

0 10n 20n 30n 40n

V(W1:3)

0V

4V

8V

12V

16V

U12SK2229

D1dmod ID

5A

VDD

48V

0

-

+W1

ION = 0IOFF = 1mAWIGTD = 0

TF = 10n

PW = 10mPER = 1

I1 = 0I2 = 1m

TR = 10n

Gate Charge Characteristics

Circuit Simulation result

Evaluation circuit

Test condition: VDD=48(V), VGS=10(V), ID=5(A)

Parameter Unit Measurement Simulation %Error

Qgs nC 3.472 3.465 -0.20

Qgd nC 8.264 7.982 -3.41

Qg nC 22.222 22.273 0.23

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11

Time

1.8us 1.9us 2.0us 2.1us 2.2us 2.3us

V(U1:2)/3 V(U1:3)

0V

5V

10V

15V

L130nH

1 2R1

50V1TD = 2u

TF = 4nPW = 5uPER = 500u

V1 = 0

TR = 4n

V2 = 20

VDD

30

0

RL

12

L2

30nH

12

R2

50

U12SK2229

Switching Time Characteristics

Circuit Simulation result

Evaluation circuit1

Test condition: VDD=30(V), VGS=0/10(V), ID=2.5(A), RG=50, RL=12

Parameter Unit Measurement Simulation %Error

ton ns 25.000 25.023 0.09

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12

U1D2SK2229_P

C1

100p

K

D1

R11

F1

FG1

V(N00091,N00063)-V(N00022,N00019)

GVALUE

OUT+OUT-

IN+IN-

D2

R2300

-+

+

-

E1

E

+

-

+

-

S1 SVON = 100mVVOFF = 90mVROFF = 50MEGRON = 1m

0

A

Equivalent Circuit

Circuit Configuration

All Rights Reserved Copyright (C) Bee Technologies Inc. 2012

13

V_VDS

0V -0.4V -0.8V -1.2V -1.6V -2.0V -2.4V

I(VDS)

100mA

1.0A

10A

0

VDS

U12SK2229

Body Diode Forward Current Characteristics

Circuit Simulation result

Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2012

14

Comparison Graph

Simulation result

Comparison table

IDR (A) -VDS (V)

%Error Measurement Simulation

0.1 0.650 0.658 1.23

0.2 0.680 0.683 0.44

0.5 0.730 0.725 -0.68

1 0.786 0.772 -1.78

2 0.860 0.844 -1.83

5 1.020 1.027 0.67

10 1.285 1.307 1.71

20 1.860 1.847 -0.70

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Time

0.84us 0.92us 1.00us 1.08us 1.16us 1.24us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

0

V1TD = 0ns

TF = 10nsPW = 1usPER = 100us

V1 = -9.4V

TR = 10ns

V2 = 10.7V

R1

50

U1D2SK2229_P

Reverse Recovery Characteristics

Circuit Simulation result

Evaluation circuit

Comparison Measurement vs. Simulation

Parameter Unit Measurement Simulation %Error

trj ns 28.000 28.011 0.04

trb ns 30.400 30.333 -0.22

trr ns 58.400 58.344 -0.10

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Reverse Recovery Characteristics Reference

trj = 28(ns)

trb = 30.4(ns)

Conditions: Ifwd = lrev = 0.2(A), Rl = 50

Relation between trj and trb

Example

Measurement

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17

V_VGS

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

-I(VGS)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

VGS

0

R1

1G

U12SK2229

ESD PROTECTION DIODE

Zener Voltage Characteristics

Circuit Simulation result

Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2012

18

Zener Voltage Characteristics Reference

IZ = 1(mA)

VZ =23.1(V) at IZ=0.99mA

Measurement