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Development of IntegratedHigh−Performance Circuits
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Prof. Dr. Michael Möller
Electronics and Circuits
Chair of
Saarland University
Exploring Limits:
Development of Integrated
High−Performance Circuits
2
R
Saarland: "Others talk − We act"
Belgium
France
Mainz
Trier
Kaiserslautern
Saarbrücken
Industrial background: Cole & Steel (’70th)
R&D expenditure, patent applications,
Federal & European Research Cooperations
Today: Two−digit growth (FRG in whole only 1 digit) in:
170 Spin−offs since 1995
Luxembourg
(Sarrebruck)
Strasbourg
Since 1957 part of Germany
(Sarre)
One University − one allocation − one focus
Competence Cluster innovation strategy:
Saarland
1 million inhabitants (NRW 18, Bavaria 12)
1.3 % of total german population
Growth
Innovations
Networks
Manpower
Infrastructure
Clu
ster Products
Markets
416 inhabitants Km (NRW 525, Bavaria 180)
University
ResearchEducation
Economy
Startups Companies
Saar−land
Rhineland−Palatinate
Campus Saarbrücken
Universität des Saarlandes (UdS)Saarland University
Cooperative study
1948 founded
15.500 students
290 professors
800 other academics
900 non−academicstaff members
FranceLuxembourg
Natural Science and Technology at UdS
Faculties
Computer ScienceKorean Insitute of Science and Technology (KIST)
Max−Planck Institute for Software Systems
German Research Center for Artificial Intelligence
Associated Research Institutes
Max−Planck Institute for Computer Science (MPI)
Institute for New Materials (INM)
Fraunhofer Inst. f. Nondestructive Testing (IzfP)
Natural Science and Technology III
Natural Science and Technology II
Natural Science and Technology I
Mathematics
Physics
Mechatronics Engineering
Materials Science
Bioscience
Pharmacy
Chemistry
Natural Science and Technology II
Natural Science and Technology I
Mathematics
Physics
Bioscience
Pharmacy
Chemistry
Natural Science and Technology III
Mechatronics Engineering Dept.
Materials Science Dept.
Embedded Courses of Studies
Computer Science Dept.
Electronics Mechanics(Micro/Nano)
Information&System technology
Computer & Communications Technology
Mechatronics
Microsystem Technology
Micro− and Nanostructures
Faculties Departments Course of studies
Electronics Mechanics(Micro/Nano)
Information&System technology
Computer & Communications Technology
Mechatronics
Microsystem Technology
Micro− and Nanostructures
Obligatory lectures
Obligatory practicals
Optional lectures
Electronics & Circuits
Solid State Electronics (El. I)
Circuit Theory & Techniques (El. II)
RF Measurement Techniques*
Analog RF Circuit Design (El. IV)
Communication Electronics (El. III)
Course of studies
Lectures & Practicals in Electronics and Circuits
Chair of Electronics and Circuits
Analogue Circuit Design
RF Measurement Techniques
Communication Electronics
Optional practicals*
*: coming soon
Research Structure
Measurement Techniques
Assembly & Interfacing Techniques
Physical Modeling of Circuit Elements and Parasitics
Realization
Characterization
Research Focus:
Research Topics:
Circuit Concepts & Optimization, Design Methodology
Exploring Performance Limits of Integrated Analogue Circuits.
Circuit Design
Modeling
Research Area:
Development of Integrated Analogue High−Speed Circuits
Self−Contained Research Concept
Realization
Characterization
Modelling
Circuit Design
Circuit Design
Modelling Realization
Characterization
Research / working areas, topics & methods
Auto. mod. generation
Broadband modelsPhysical models
Signal quality & fidelity
VNA, diff. S−params.Spectrum analysis
BERT
Sampling scope, TDR
Building block mod’ing.
Similarity & mappingLayer peeling
Wiring parasiticsTML models
Signal propagationModel param. extract
topi
car
eaar
eam
etod
s
area
topi
c
area
topi
c
Analogue performanceTechnology evaluation
High−Speed & Low powerParasitic effects
Utilized Parasitics
Low−cost & High Perform.Organic substrates
CPW/Microstrip TML
Assembly Techniques
TML Interfaces
Design MethodologyCircuit OptimizationNew Circuit Concepts
Wire bonds, FCUnwant. & generated sig.
2000
1999
1998 50 Gb/s EAM driver MUX*
(KomNet)
1997(Photonik II)
1995
1991
2001
2002
** developed @ MICRAM Microelectronic GmbH*developed @ Ruhr University Bochum, Prof. Rein
Low power, SFI−5 compliant 43.5 Gb/s, 1:16/16:1 SerDes Module **
43.5 Gb/s SONET/SDH RZ/NRZ 16:1 MUX with 20/40 GHz Clock output **
43.5 Gb/s fully integrated SONET/SDH RZ/NRZ CDR & TIA & DEMUX **
The world’s first 60 Gb/s MUX/DEMUX cipset *
The world’s first 50 Gb/s MUX *
The world’s first 30 Gb/s MUX *
40 Gb/s fully integrated TIA & CDR&DEMUX*’ **
World’s first fully integrated 87 Gb/s CDR & DEMUX module **
Example: Development of Transmitter & Receiver
High−Speed Design Background and Evolution
(contains "digital" as well as analogue circuits)
MUX, CDR & DEMUX modules for experiments at > 100Gbit/s (MultiTeraNet) **
2004
2006
Research Activities
Ongoing
Planned
Circuit concepts for low power high−speed circuits in bipolar technology.
Figures of merit for technology selection by performance criteria.
Demonstrator circuits for future 100 Gbit/s Ethernet.
Circuit concepts for high−speed driver circuits exeeding VCEO limit.
Realtime circuit simulation by analogue parallel computing.
Automatic generation of physical models for 2n−ports from S−parameter measurements.
Automatic measurement of differential S−parameters with ordinary VNA.
Concepts and techniques for dual mode operation of linear differential circuits.
Measurement Capabilities
Measurement equipment partly located at and shared with industrial partners
All measurements can be carried out for single ended as well as differential devices.
On wafer measurements up to 100 Gb/s in clean room.
High−Speed Measurement
100 Gb/s BER testing.
100 GHz spectrum analysis.
110 GHz S− parameter measurements.
100 Gb/s pattern generation.
Test/Preselection
Functional & Parametric test on Wafer and Modules at small volumes.
50 (80) GHz Sampling scope
Even−, odd−, and conversion mode measurements (freq.&time domain).
RF−module technology
Soft Substrates for high−speed, high−density applications:
Thermal mounting for power densities up to 1 W/mm2.
Broadband substrate layout utilizing verified library elements.
Fine pitch Al, Au wire bonding.
Module and subassembly manufacturing.
PTFE/Polymer based,bandwidth greater 100 GHz,dielectric constants of 2.2 ... 10.8,arbitrarily shaped substrates,plated through holes,edge metallization,fine pitch resolution with 2 mil lines/spaces.
Technology located at MICRAM
Cooperation and Partners
Spectrum Analyzer 100 GHzVNA 110 GHz
Synthesizer, Sampling−Scope, (BERT, Wafer Prober)
Cleanroom (100/1000)
Turnkey product development
Semi−autom. Waferprober, @speed on wafer, temp −40...200°C RF module technology > 100 GHz, > 1W/mm^2
> 100 Gbit/s Measurement technology
Laserlithography (1um)Etch and Thin−film technologiesLaboratories for assembly and interfacing technologies
Physical equipment (e.g. atomic force microscope)
Recommended