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Facility Name
Ultra Thin CCD detectors for particle physics experiments.
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Facility Name
Fabrication of SU8 spacers
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Facility Name
20um
700um
Silicon-on-Insulator wafer
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Facility Name
20um
700um
Wet etch device layer. ( 4 off 125mm x 25mm x 20um& 2 off 100mm x 15mm x 20um)
150mm diameter SOI wafers.
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Facility Name
Silicon
Silicon20um
700um
Coat 500um of SU8 across the wafer.
600umSU8
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Facility Name
20um
700um
Expose SU8 to Ultra-violet radiation and develop.
Resultant structures will be based on an open honeycomb structures for the 125mm devices
500um
11mm1mm
20,30,40,50um three pointed stars. Where each point is 100um long
Presenter Name
Facility Name
20um
700um
500um
Silicon wafer
Spin coated SU8, whichis not cured before stampingon to the SU8 pillars.
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Facility Name
Wafer scale definition of 20um thick, large area CCD devices.
Presenter Name
Facility Name
20um
700um
Silicon-on-Insulator wafer
Presenter Name
Facility Name
20um
700um
Wet etch device layer. ( 4 off 125mm x 25mm x 20um& 2 off 100mm x 15mm x 20um)
150mm diameter SOI wafers.
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Alignment Jigfor 150mm
diameter wafers
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Facility Name
Coat edges of wafer assembly with Wax Ws.
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Etch in 45% KOH to remove exposed silicon
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Etch in HF to remove the buried oxide.
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Etch in Xylene to dissolve the wax.
