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EE143 – Ali Javey
Section 6: Ion Implantation
Jaeger Chapter 5
EE143 – Ali Javey
Ion Implantation - Overview• Wafer is Target in High Energy Accelerator
• Impurities “Shot” into Wafer
• Preferred Method of Adding Impurities to Wafers– Wide Range of Impurity Species (Almost Anything)
– Tight Dose Control (A few % vs. 20-30% for high temperature pre-deposition processes)
– Low Temperature Process
• Expensive Systems
• Vacuum System
EE143 – Ali Javey
Equipment( )
( )dttInqA
Q
qr
mV
T
∫=
=
=
0
2
1 Dose Implanted
2 Field Magnetic
x q particle chargedon Force
B
BvF
EE143 – Ali Javey
Ion Implantation
x
Blocking maskSi
+ C(x) as-implantdepth profile
Depth xEqual-Concentrationcontours
Reminder: During implantation, temperature is ambient. However, post-implant annealing step (>900oC) is required to anneal out defects.
Reminder: During implantation, temperature is ambient. However, post-implant annealing step (>900oC) is required to anneal out defects.
y
EE143 – Ali Javey
Advantages of Ion Implantation• Precise control of dose and depth profile• Low-temp. process (can use photoresist as mask)• Wide selection of masking materials
e.g. photoresist, oxide, poly-Si, metal
• Less sensitive to surface cleaning procedures• Excellent lateral uniformity (< 1% variation across 12” wafer)
n+n+
Application example: self-aligned MOSFET source/drain regions
SiO2
p-Si
As+As+ As+
Poly Si Gate
EE143 – Ali Javey
Ion Implantation Energy Loss Mechanisms
Si+
+
Si
Si
e e
+ +Electronicstopping
Nuclearstopping
Crystalline Si substrate damaged by collision
Electronic excitation creates heat
EE143 – Ali Javey
Light ions/at higher energy more electronic stopping
Heavier ions/at lower energy more nuclear stopping
EXAMPLES Implanting into Si:
Ion Energy Loss Characteristics
H+
B+
As+
Electronic stoppingdominates
Electronic stoppingdominates
Nuclear stoppingdominates
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Stopping Mechanisms
E1(keV) E2(keV)B into Si 3 17P into Si 17 140As into Si 73 800
EE143 – Ali Javey
Simulation of 50keV Boron implanted into Si
EE143 – Ali Javey
Model for blanket implantation
( ) ( )
( ) pp
p
p
pp
RNdxxNQ
R
R
RxNxN
Δ=
=Δ
=
⎥⎥⎦
⎤
⎢⎢⎣
⎡
Δ
−−=
∫∞
0
p
2
2
2= Dose
StraggleR
Range Projected
2exp
ProfileGaussian
π
EE143 – Ali Javey
Rp and ΔRp values are given in tables or charts e.g. see pp. 113 of Jaeger
Note: this means 0.02 μm.
Projected Range and Straggle
EE143 – Ali Javey
Selective Implantation
( ) ( ) ( )
( )
( ) solution ldimensiona-one is xN
straggle transverse
222
1
,
=Δ⎥⎥⎦
⎤
⎢⎢⎣
⎡⎟⎟⎠
⎞⎜⎜⎝
⎛
Δ+
−⎟⎟⎠
⎞⎜⎜⎝
⎛
Δ−
=
=
⊥
⊥⊥
R
R
ayerfc
R
ayerfcyF
yFxNyxN
EE143 – Ali Javey
Transverse (or Lateral) Straggle (ΔRt or Δ R⊥)
ΔRt
ΔRtΔRp
>1
ΔRt
ΔRp
EE143 – Ali Javey
y
Mask
C(y) at x=Rp
x = Rp
Implanted specieshas lateral distribution,larger than mask opening
Implanted specieshas lateral distribution,larger than mask opening
x
y
Higher concentrationLowerconcentration
Feature Enlargement due to lateral straggle
EE143 – Ali Javey
Selective Implantation – Mask thickness
• Desire Implanted Impurity Level to be Much Less Than Wafer Doping
N(X0) << NB
or
N(X0) < NB/10
EE143 – Ali Javey
What fraction of dose gets into Si substrate?
x=0 x=d
C(x)Mask material (e.g. photoresist)
Si substrate
C(x) Mask material with d=∞
x=0 x=d
-
Transmission Factor of Implantation Mask
EE143 – Ali Javey
( ) ( )
( )
( )( )
T C x dx C x dx
erfcd R
R
erfc x e dy
C x d
C x R
d
p
p
yx
p
= −
=−⎧
⎨⎩
⎫⎬⎭
= −
==
∫∫
∫
∞
−
−
00
0
4
1
2 2
12
10
2
Δ
πRule of thumb Good masking thickness:
d R Rp p= + 4 3Δ. ~
are values of for ions intothe masking material
ΔRpRp ,
Transmitted Fraction
EE143 – Ali Javey
Junction Depth
( )( )
⎟⎟⎠
⎞⎜⎜⎝
⎛Δ±=
=⎥⎥⎦
⎤
⎢⎢⎣
⎡
Δ
−−
=
B
pppj
Bp
pjp
Bj
N
NRRx
NR
RxN
NxN
ln2
2exp
2
2
The junction depth is calculated from the point at which the implant profile concentration = bulk concentration:
EE143 – Ali Javey
Channeling
EE143 – Ali Javey
Use of tilt to reduce channeling
To minimize channeling, we tilt wafer by 7o with respect to ion beam.To minimize channeling, we tilt wafer by 7o with respect to ion beam.
Random component
channeledcomponent
C(x)
x
Axial ChannelingPlanar ChannelingRandom
Lucky ions fall into channel despite tilt
EE143 – Ali Javey
Si+
1 E15/cm2
Si crystal
Disadvantage : Needs an additional high-dose implantation stepDisadvantage : Needs an additional high-dose implantation step
B+
Si crystal
Amorphous Si
Step 1High dose Si+implantation to covertsurface layer intoamorphous Si
Step 2Implantation ofdesired dopantinto amorphous surface layer
Prevention of Channeling by Pre-amorphization
EE143 – Ali Javey
With Accelerating Voltage = x kV
B+
P+
As+
Kinetic Energy = x · keV
B+++
B++ Kinetic Energy = 2x · keV
Kinetic Energy = 3x · keV
Singlycharged
Doublycharged
Triplycharged
Note: Kinetic energy is expressed in eV . An electronic charge q experiencing a voltage drop of 1 Volt will gain a kinetic energy of 1 eV
Kinetic Energy of Multiply Charged Ions
EE143 – Ali Javey
BF2+
Kinetic Energy = x keV
BFF
B has 11 amuF has 19 amu
accelerating voltage= x kV+ -
%20191911
11
BFof.E.K
Bof.E.K
vm2
1Fof.E.K
vm2
1Bof.E.K
vvvVelocity
2
2BF
2BB
FFB
=++
≈
⋅=
⋅=
==
+
Molecular ion will dissociate immediatelyinto atomic components after entering a solid.All atomic componentswill have same velocityafter dissociation.
SolidSurface
Molecular Ion Implantation
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Implantation Damage
EE143 – Ali Javey
Amount and type of Crystalline Damage
EE143 – Ali Javey
(1) Restore Si crystallinity.
(2) Place dopants into Si substitutional sitesfor electrical activation
After implantation, we need an annealing step.A typical anneal will:
Post-Implantation Annealing Summary
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Deviation from Gaussian Theory
• Curves deviate from Gaussian for deeper implants (> 200 keV)
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Shallow Implantation
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Rapid Thermal Annealing
•Rapid Heating•950-1050o C•>50o C/sec•Very low dopant diffusion
(b)
EE143 – Ali Javey
Dose-Energy Application Space
EE143 – Ali Javey
Sheet Resistance RS of Implanted Layers
x
C(x) log scale
xj
CB
μ
1017 1019
μn
Total doping conc
μp
p-sub (CB)
n
( ) ( )[ ]∫ −μ⋅=
jx
0 B
S
dxCxCxq
1R
Example:n-type dopants implantedinto p-type substrate
x =0
x =xj
x