© 2015 ROHM Co.,Ltd. Part No. BVDSS RDS (on) ID Max Package (V) (mȍ (A) SCT3022KL 1200 22 95 TO-247N SCT3030KL 1200 30 72 SCT3040KL 1200 40 55 SCT3030AL 650 30 70 Part No. BVDSS RDS (on) ID Max ൗৌ (AEC-Q101 *2 ) Package (V) (mȍ (A) SCT2750NY 1700 750 6 䠉 TL-268-2L SCT2H12NY 1700 1,150 4 䠉 SCT2080KEC 1200 80 40 䠉 TO-247 SCT2080KEAHR 1200 80 40 Yes SCH2080KEC *1 1200 80 40 䠉 SCT2160KEC 1200 160 22 䠉 SCT2160KEAHR 1200 160 22 Yes SCT2280KEC 1200 280 14 䠉 SCT2280KEAHR 1200 280 14 Yes SCT2450KEC 1200 450 10 䠉 SCT2450KEAHR 1200 450 10 Yes SCT2120AFC 650 120 29 䠉 TO220AB Lineup ছথॵউ Lineup ছথॵউ ৈச५ॵॳথ High-speed switching Features ड़থقആ২৲৵ كLow ON-resistance (Small temperature dependency) Structural Diagram ଡୗ Structural Diagram ଡୗ SiC-MOSFETs Low Switching Loss and ON Resistance Contribute to Greater Energy Savings ५ॵॳথଷड़থपॉग़ॿঝॠش৲प൴ SCT2 and SCH2 Series, SCT3 Series ਸ਼ڮ৻ SiC-MOSFET 2 nd Generation SiC-MOSFETs Achieves Further Reductions in ON Resistance ಌऩॊड़থ৲ৰਠ Significantly Reduced Switching Loss ५ॵॳথৎभଷপଷ 0 20 40 60 80 100 120 Si-IGBT SiC-MOSFET Loss (W) ड़থଷ Turn-ON switching loss ड़ইଷ Turn-OFF switching loss ଷ Conduction loss Comparison of loss ق30kHzฌৎ) When operating at 30 kHz ५ॵॳথৎभ ଷ IGBT73% Compared to IGBTs loss reduced by 73% ड़থଷ ड़ইଷ ଷ Turn-ON switching loss Turn-OFF switching loss Conduction loss IGBT73% ট५చ Compared to IGBTs Loss Reduced by 73% ఞেॲड़شॻभಗ୮ऋாीथ৵औः Low body diode Qrr and trr ਗ਼ৡଷপచ५ॵॳথଷ73% [Si-IGBTधຎ, 30kHz ฌৎ] Significantly reduced power loss by 73% (Compared to Si-IGBTs, when operating at 30kHz) ৈആ୭दฌ Tj (Max.) Û& Supports high temperature ड़থपॉথংشॱभঃডشഡ২ৰਠ Low ON resistance improves inverter power density Features ৈச५ॵॳথऋ૭ચ High-speed switching ਸ਼گ৻ SiCॺঞথॳMOSFET 3 rd Generation SiC Trench MOSFETs ఞেॲड़شॻभಗ୮ऋாीथ৵औः Minimal reverse recovery behavior of the parasitic diode ఞেॲड़شॻਗ਼पॊಞ༄৲ Eliminates degradation caused by parasitic diode conduction Qgఞেઍऋ৵औः Small Qg and parasitic capacitance *1 Co-packed SiC-SBD *2 AEQ-101 rev.D : Under Development N+ P SiC sub Metal P+ SiC-Planar MOS SiC n - Drift layer Poly-Si Metal SiC-Trench MOS Gate trench Source trench SiC n - Drift layer SiC sub Metal Poly-Si Metal Trade-off curve between RDS (on) and Ciss Ciss (pF) 0 20 40 60 80 100 120 140 160 RDS RQ # Û& Pȍ) SiC-Planar MOS SCT2080KE 80mȍ V Trench MOS 1200V 40mȍ 0 P+ P N+ Trench MOS 1200V 80mȍ at same chip area Ciss Ļ 5RQ Ļ DW VDPH 5RQ Ciss Ļ ఞেॲड़شॻਗ਼पॊಞ༄৲ Eliminates degradation caused by parasitic diode conduction ৈആ୭दฌ Tj (Max.) Û& Supports high temperature ※内容は予告なく変更する場合がありますので、ご了承ください。 www.rohm.co.jp 2015.12.01

SiC-MOSFETs - micro.rohm.com · < ûSiC-MOSFET 2nd Generation SiC-MOSFETs Achieves Further Reductions in ON Resistance ) J ) \ ¥ ¿ ò Q ð Significantly Reduced Switching Loss k

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$Page 1: SiC-MOSFETs - micro.rohm.com · < ûSiC-MOSFET 2nd Generation SiC-MOSFETs Achieves Further Reductions in ON Resistance ) J ) \ ¥ ¿ ò Q ð Significantly Reduced Switching Loss k$

Part No. BVDSS RDS (on) ID Max

Package (V) (m (A)

SCT3022KL 1200 22 95

TO-247N SCT3030KL 1200 30 72

SCT3040KL 1200 40 55

SCT3030AL 650 30 70

Part No. BVDSS RDS (on) ID Max

(AEC-Q101*2) Package

(V) (m (A) SCT2750NY 1700 750 6

TL-268-2L SCT2H12NY 1700 1,150 4 SCT2080KEC 1200 80 40

TO-247

SCT2080KEAHR 1200 80 40 Yes SCH2080KEC*1 1200 80 40 SCT2160KEC 1200 160 22 SCT2160KEAHR 1200 160 22 Yes SCT2280KEC 1200 280 14 SCT2280KEAHR 1200 280 14 Yes SCT2450KEC 1200 450 10 SCT2450KEAHR 1200 450 10 Yes SCT2120AFC 650 120 29 TO220AB

Lineup

High-speed switching

Features

Low ON-resistance (Small temperature dependency)

Structural Diagram

SiC-MOSFETs

Low Switching Loss and ON Resistance Contribute to Greater Energy Savings

SCT2 and SCH2 Series, SCT3 Series SiC-MOSFET 2nd Generation SiC-MOSFETs

Achieves Further Reductions in ON Resistance

Significantly Reduced Switching Loss

100

120