The holistic approach to meet today’s patterning challenges

Martyn Coogans Product Manager, Applications

10 nm

ovX ovY99.7 42.1 43.8Max 42.1 43.8m+3s60.1 69.73sd 59.9 66.0

wafer 7

Wafer alignment Etch fingerprint

CMP fingerprint Metrology accuracy

On product OVERLAY > 6nm

10 nm99.7%Fx: 0.65 nmy: 0.56 nm

( )

NXT-C:1970 & NXE:3300 - Scanner OVERLAY < 2nm

NXT-C:1970 Champion data

(0.7-0.6nm)

10 nm99.7%x: 0.9 nmy: 0.7 nm

NXE:3300 Champion data

(0.9-0.7nm)

Scanner Overlay Error Contribution Other Overlay Error Contributors

Customer Challenge: scanner and non scanner contributors to patterning performance must be addressed – example Overlay

7 September 2015

Public Slide 2

Scanner is the only tool processing the wafer at the field level allowing per field corrections, linear and high order

Public Slide 3

Dose manipulator

D

F

O

Dose

Overlay

Focus In

terfa

ces

(kno

bs)

actu

ator

s

Wafer stage

Reticle stage

Inside NXT and NXE scanners Scanner exposure is field-by-field

ASML holistic lithography: links the scanner to YieldStar metrology and computational lithography design context

Advanced

lithography capability

Computational Lithography

Design context

Process Window Enlargement

YieldStar Metrology and

Control SW

Process Window Control

Process window detection

NXT - Immersion NXE - EUV

Public

ASML holistic lithography: supports the setup, control & optimization of litho performance (Overlay, Focus, Dose)

Ramp Process development HVM

Optimal models and sampling

Static process setup

Overlay and Imaging On-Product Performance

3

Reduce L2L , W2W

3 Dynamic process setup

waf

er 2

waf

er

lot 2 lot

machine 2 machine

Reduce Impact of Variations

4 Process control & monitoring

Excursion control thru scanner, metro & process KPI monitoring

Maintain Performance

5

Public

Optimal metrology accuracy, precision and throughput

Metrology setup

YieldStar and Smash Metrology

µDBO

µDBF

SMASH XY

2

CD

Matched machine overlay on all layouts

Scanner Performance 1

1.7nm

Holistic lithography addresses the 3 contributors of on product overlay

On

Prod

uct O

verla

y (n

m)

Scanner Contribution

Application dependent contribution

Process Contribution

Public

Separate control loops for scanner, layout dependent and process to optimize holistic control

Application dependent calibration

Process models

Baseliner Grid

Dense subrecipe

On

Prod

uct O

verla

y (n

m)

Public

ASML holistic lithography: supports the setup, control & optimization of litho performance (Overlay, Focus, Dose)

Ramp Process development HVM

Optimal models and sampling

Static process setup

Overlay and Imaging On-Product Performance

3

Reduce L2L , W2W

3 Dynamic process setup

waf

er 2

waf

er

lot 2 lot

machine 2 machine

Reduce Impact of Variations

4 Process control & monitoring

Excursion control thru scanner, metro & process KPI monitoring

Maintain Performance

5

Public

Optimal metrology accuracy, precision and throughput

Metrology setup

YieldStar and Smash Metrology

µDBO

µDBF

SMASH XY

2

CD

Matched machine overlay on all layouts

Scanner Performance 1

1.7nm

9

• Single acquisition of ±1st order, Multi-layer targets, and Double exposure targets • Overlay & Focus combined 40%+α lower CAPEX

<Date>

Confidential YieldStar 350E metrology improved throughput, accuracy, process robustness and application space

Sampling points

• Higher source power • RGB alignment source • Higher detection NA

Accuracy

• Bottom grating asymmetry • Self-referencing • Higher wavelength for opaque

layers

Wide application

• μDBO/μDBF • DBO/DBF • Small Spot ADI/AEI CD

Robustness

YS350E spot-size

YS250D spot-size

Accuracy Sampling points

Robustness Applications

Multi layer target

ASML Confidential

YieldStar OCD - Angular Resolved, High-NA Technology Fast, High-order Dose & ADI/AEI Fingerprint Monitor & Corrections

7 September 2015

Public

Slide 10

SE=Spectroscopic Ellipsometry; RE=Normal Incidence Reflectometry

Improved Fingerprint Correction

*10X10um available on YieldStar 350

Lower Noise @ Performance High Order Sampling with Small Inspection Areas*

30% full wafer CDU 3σ improvement with YS

Nor

mal

ized

In

trafie

ld C

DU

3σ

Baseline High-Order Correction

CD-SEM YieldStar Baseline High-Order

Correction Nor

mal

ized

Intra

field

CD

U 3σ

2X Less Metrology

Noise 45%

Correction Improvement

25% Correction Improvement

9/7/2015

Public Slide 11

PR

BARC

A

E

SiB

C

D

PR

BARC

A

E

SiB

C

D

Process/ Litho Input

• Process Stack • Material properties • Scanner aberrations • Illumination Pupil • Design rules • OPC Model • Process Variations

Computational target design optimization

(D4C)

• Build stack • Set conditions • Run simulations • Rank available targets • Predict improvements

Holistic metrology flow optimizes target design and recipe selection for optimal alignment and overlay

Reticle tape-out and metrology strategy

• Optimized Metrology

target GDS • Optimized Alignment

target GDS • Measurement recipe

recommendations • Alignment Tree Strategy

Monitoring metrology Performance

(Litho InSight)

• Tool health • Overlay Accuracy • Stack variations • Device Matching stability

Target selection and Recipe Optimization

(YieldStar)

• Automated flow • Overlay accuracy

reference based on overlay data of multiple wavelengths and polarization

• Robust for bottom grating asymmetry

Detectability

Process Robustness Device matching

9/7/2015

Public Slide 12

Printability

The holistic approach for robust alignment and metrology targets giving best precision and accuracy

Larger target process window Stronger and more robust signal

Accurate target behaves like device cell Target aberration sensitivity matches device

Detectability

Process Robustness Device matching

9/7/2015

Public Slide 13

Printability

Larger target process window Stronger and more robust signal

Accurate target behaves like device cell Target aberration sensitivity matches device Target optimization can deliver better overlay and potentially higher yield

SPIE 2015 : Improving overlay with computationally designed metrology targets. SK hynix, Young-Sik Kim, et. al.

The holistic approach for robust alignment and metrology targets giving best precision and accuracy

ASML holistic lithography: supports the setup, control & optimization of litho performance (Overlay, Focus, Dose)

Ramp Process development HVM

Optimal models and sampling

Static process setup

Overlay and Imaging On-Product Performance

3

Reduce L2L , W2W

3 Dynamic process setup

waf

er 2

waf

er

lot 2 lot

machine 2 machine

Reduce Impact of Variations

4 Process control & monitoring

Excursion control thru scanner, metro & process KPI monitoring

Maintain Performance

5

Public

Optimal metrology accuracy, precision and throughput

Metrology setup

YieldStar and Smash Metrology

µDBO

µDBF

SMASH XY

2

CD

Matched machine overlay on all layouts

Scanner Performance 1

1.7nm

Overlay Optimizer 2 19par interface shows 0.4nm OPO improvement in matched machine mode

Overlay Optimizer 1 Simulation - self corrected

3.8; 3.0nm

Add 19par OVO2 interface

Layer 1 -- NXT:1960 Layer 2 -- NXT:1970

3.4, 2.8nm

Overlay Optimizer 2 Simulation - self corrected

ASML holistic lithography: supports the setup, control & optimization of litho performance (Overlay, Focus, Dose)

Ramp Process development HVM

Optimal models and sampling

Static process setup

Overlay and Imaging On-Product Performance

3

Reduce L2L , W2W

3 Dynamic process setup

waf

er 2

waf

er

lot 2 lot

machine 2 machine

Reduce Impact of Variations

4 Process control & monitoring

Excursion control thru scanner, metro & process KPI monitoring

Maintain Performance

5

Public

Optimal metrology accuracy, precision and throughput

Metrology setup

YieldStar and Smash Metrology

µDBO

µDBF

SMASH XY

2

CD

Matched machine overlay on all layouts

Scanner Performance 1

1.7nm

7 September 2015 Slide 17

TwinScan NXT

customer Fab Host

(APC and /or MES)

Product wafers

Holistic Lithography delivers < 4nm On-Product matched overlay for Logic customers

YieldStar Baseliner wafers YieldStar

Litho InSight

Customer 10p R2R

HOCPE corrections on R2R residuals

Public

7 September 2015 Slide 18

TwinScan NXT

customer Fab Host

(APC and /or MES)

Product wafers

Holistic Lithography delivers < 4nm On-Product matched overlay for memory customers

YieldStar Baseliner wafers YieldStar

Litho InSight HOCPE corrections

4.2 nm 5.3 nm

OVL

(m+3

s) [n

m]

4.7 nm 3.8 nm

Lot

POR LIS POR LIS

x y

Public

ASML holistic lithography: supports the setup, control & optimization of litho performance (Overlay, Focus, Dose)

Ramp Process development HVM

Optimal models and sampling

Static process setup

Overlay and Imaging On-Product Performance

3

Reduce L2L , W2W

3 Dynamic process setup

waf

er 2

waf

er

lot 2 lot

machine 2 machine

Reduce Impact of Variations

4 Process control & monitoring

Excursion control thru scanner, metro & process KPI monitoring

Maintain Performance

5

Public

Optimal metrology accuracy, precision and throughput

Metrology setup

YieldStar and Smash Metrology

µDBO

µDBF

SMASH XY

2

CD

Matched machine overlay on all layouts

Scanner Performance 1

1.7nm

Engineering & diagnostic capability to maintain and control performance in high volume

Litho Clusters

Customer MES / APC server

Design database

Design & process info

Dashboard Fingerprint analysis Trends, down drilling Budget breakdown

LCP

Data logistics Monitoring, diagnostics

Dat

a ch

anne

l

Litho InSight software is supporting engineers in-house to deliver

• Dashboards • Analyses • Trending • Data management

7 September 2015 Slide 20

Public

Thanks to: Jim Kavanagh, Chris Kim, Stuart Young, Steven Welch, Henk Niesing, Chris de Ruiter, Jan Mulkens, Jaap Karssenberg, Manouk Rijpstra, Martin Ebert, Stefan Weichselbaum, Christophe Fouquet, Gary Zhang, Paul Tuffy, Kevin Ryan & Lotte Williams