2SK4017 (Standard Model) PSpice Model (Free SPICE Model)

All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

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Device Modeling Report

Bee Technologies Inc.

COMPONENTS: MOSFET (Model Parameters) PART NUMBER: 2SK4017 MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters) / ESD Protection Diode


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*$ *PART NUMBER: 2SK4017 *MANUFACTURER: TOSHIBA *VDS=60V,ID=5A *All Rights Reserved Copyright (c) Bee Technologies Inc.2009 .SUBCKT 2SK4017 G D S M_M1 D G S S M2SK4017 D_D1 S D D2SK4017 X_U3 G S DZ2SK4017 .MODEL M2SK4017 NMOS + LEVEL=3 L=1.9200E-6 W=.3125 KP=78.000E-6 RS=10.000E-3 + RD=49.611E-3 VTO=2.3803 RDS=600.00E3 TOX=80.000E-9 + CGSO=2.2017E-9 CGDO=269.90E-12 RG=25.4 + CBD=160.66E-12 MJ=.4321 PB=.3905 + RB=1 N=5 IS=1E-15 GAMMA=0 KAPPA=0 .MODEL D2SK4017 D + IS=45.487E-18 N=.72515 RS=33.843E-3 IKF=.56232 + CJO=3.0000E-12 BV=80 IBV=10.000E-6 TT=18.033E-9 .ENDS *$ .subckt DZ2SK4017 1 2 D2 1 3 DZ2 D1 2 3 DZ1 .model DZ1 D + IS=0.01p N=0.1 ISR=0 + CJO=3E-12 BV=24.429 IBV=0.001 RS=0 .model DZ2 D + IS=0.01p N=0.1 ISR=0 + CJO=3E-12 BV=24.429 IBV=0.001 RS=505.555 .ENDS *$

SPICE MODEL

Circuit Configuration

U12SK4017

1

2

3


3

MOSFET MODEL

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


4

0

3

6

9

12

15

0.0 2.0 4.0 6.0 8.0 10.0

Tra

nsco

nd

ucta

nce g

fs (

S)

Drain Current ID (A)

Measurement

Simulation

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs(S)

%Error Measurement Simulation

0.2 2.300 2.202 -4.27

0.5 3.550 3.439 -3.12

1 4.850 4.796 -1.11

2 6.800 6.652 -2.18

5 10.300 10.126 -1.69

10 13.600 13.744 1.06


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V_V1

0V 1.0V 2.0V 3.0V 4.0V 5.0V

I(V3)

0A

2A

4A

6A

8A

10A

V1

V2

10

0

V3

U12SK4017

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit


6

0.00

2.00

4.00

6.00

8.00

10.00

0.0 1.0 2.0 3.0 4.0 5.0

Dra

in C

urr

en

t ID

(A

)

Gate - Source Voltage VGS (V)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)


0.2 2.500 2.560 2.39

0.5 2.650 2.666 0.60

1 2.780 2.787 0.26

2 2.950 2.962 0.39

5 3.300 3.318 0.54

10 3.750 3.735 -0.39


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V_VDS

0V 25mV 50mV 75mV 100mV 125mV 150mV

I(V3)

0A

0.5A

1.0A

1.5A

2.0A

2.5A

0

V3

0Vdc

VDS

0Vdc

V1

10

U12SK4017

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=2.5A, VGS=10V Unit Measurement Simulation %Error

RDS (on) 0.070 0.070 0.00


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Time*1mA

0 5n 10n 15n 20n 25n 30n

V(W1:3)

0V

5V

10V

15V

20V

VDD

48

I1TD = 0

TF = 5nPW = 600uPER = 1000u

I1 = 0I2 = 1m

TR = 5n -

+

W1

ION = 0uAIOFF = 1mAW

I2

5

0

D2

Dbreak

U12SK4017

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=48V, ID=5A, VGS=10V

Unit Measurement Simulation %Error

Qgs nC 3.250 3.250 -0.01

Qgd nC 4.000 4.015 0.36

Qg nC 15.000 14.251 -4.99


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Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)


0.100 150.000 145.600 -2.93

0.200 135.000 134.370 -0.47

0.500 112.000 112.520 0.46

1.000 93.000 92.800 -0.22

2.000 74.000 74.450 0.61

5.000 52.000 51.680 -0.62

10.000 39.000 38.920 -0.21

20.000 29.000 29.080 0.28

40.000 20.500 21.500 4.88

60.000 18.000 18.193 1.07

Simulation

Measurement


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Time

0.92us 0.96us 1.00us 1.04us 1.08us 1.12us

V(U1:G) V(U1:D)/3.02

-2V

0V

2V

4V

6V

8V

10V

12V

14V

0

VDD30.2Vdc

V2TD = 1u

TF = 5nPW = 10uPER = 1m

V1 = 0

TR = 5n

V2 = 20

L2

50nH

U12SK4017

R2

4.7

R1

4.7

L1

30nH

RL

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Switching Time Characteristics


Evaluation circuit

Simulation Result

ID=2.5A, VDD=30V VGS=0/10V

Unit Measurement Simulation %Error

ton ns 20.000 20.035 0.18


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V_V2

0V 2V 4V 6V 8V 10V

I(V3)

0A

2A

4A

6A

8A

10A

V2

20V1

0

0

V3

0Vdc

U12SK4017

Output Characteristic


Evaluation circuit

VGS=2.8V

8

3

3.3

10 4

6


12

V_VSD

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V

I(Vsense)

100mA

1.0A

10A

VSD

0

Vsense

0Vdc U1

2SK4017

BODY DIODE SPICE MODEL Forward Current Characteristic


Evaluation Circuit


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0.1

1.0

10.0

0 0.2 0.4 0.6 0.8 1 1.2

Dra

in r

evers

e cu

rren

t ID

R (

A)

Drain-source voltage: -VDS (V)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

IDR (A) -VDS (V)


0.1 0.6700 0.6676 -0.36

0.2 0.6850 0.6856 0.09

0.5 0.7150 0.7178 0.39

1 0.7550 0.7546 -0.05

2 0.8100 0.8116 0.19

5 0.9500 0.9464 -0.38

10 1.1400 1.1414 0.12


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Time

19.84us 19.92us 20.00us 20.08us 20.16us 20.24us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristics Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Parameter Unit Measurement Simulation %Error

trj ns 12.000 12.050 0.42

V1

TD = 0us

TF = 10nsPW = 20usPER = 50us

V1 = -9.40v

TR = 10ns

V2 = 10.60v

R1

50

0

U1

2SK4017


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Reverse Recovery Characteristic Reference

Trj=12.00(ns) Trb=13.60(ns) Conditions: Ifwd=lrev=0.2(A), Rl=50

Relation between trj and trb

Example

Measurement


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V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

ESD PROTECTION DIODE SPICE MODEL

Zener Voltage Characteristic


Evaluation Circuit

R1

0.001mV1

0Vdc

0

R2

100MEG

U12SK4017


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Zener Voltage Characteristic Reference

Technology

2SK4017 (Standard Model) PSpice Model (Free SPICE Model)