SPICE MODEL of TPC8406-H (Professional+BDP N&P Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPC8406-H MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Remark: Silicon N&P Channel MOS Type


MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


P-Channel Model

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs

Error(%) Measurement Simulation

-0.500 6.024 6.250 3.752

-1.000 7.692 7.813 1.563

-2.000 10.526 10.638 1.067

-5.000 15.625 15.773 0.947


V_V1

0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V

I(V3)

0A

-2.5A

-5.0A

-7.5A

-10.0A

-12.5A

-15.0A

-17.5A

-20.0A

-22.5A

-25.0A

open

V1-4.5Vdc

R1100MEG

open

open

TPC8406-H

0

0

V3

0Vdc

V2-10Vdc

open

open

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit


Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

-1.000 -2.050 -2.030 -0.985

-2.000 -2.150 -2.141 -0.428

-5.000 -2.400 -2.372 -1.183

-10.000 -2.650 -2.649 -0.053

-20.000 -3.050 -3.071 0.679


open

V1-4.5Vdc

R1100MEG

0

open

open

open

0

TPC8406-H

open

V210Vdc

V3

0Vdc

V_V2

0V -50mV -150mV -250mV -350mV -450mV

I(V3)

0A

-1.0A

-2.0A

-3.0A

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=-3.3A, VGS=-4.5V Measurement Simulation Error (%)

RDS (on) 29.000 m 29.000 m 0.000


Time*1ms

0 5n 10n 15n 20n 25n 30n 35n 40n 45n 50n

V(W1:2)

0V

-2V

-4V

-6V

-8V

-10V

-12V

-14V

-16V

-18V

-20V

I2

-6.5Adc

open

-

+

W1

ION = 0uAIOFF = 1mW

V2

0Vdc

0

0

TPC8406-HD1

Dbreak

open

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n

open

open

V1-32Vdc

open

R1100MEG

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=-32V,ID=-6.5A ,VGS=-10V

Measurement Simulation Error (%)

Qgs 3.200 nC 3.261 nC 1.903

Qgd 8.100 nC 7.935 nC -2.040

Qg 27.000 nC 27.065 nC 0.241

VDD=-32V

-16V

-8V


Capacitance Characteristic

Simulation Result

VSD(V) Cbd(pF)


0.100 132.620 132.900 0.211

0.200 128.800 127.500 -1.009

0.500 121.200 120.500 -0.578

1.000 112.750 113.500 0.665

2.000 105.950 106.300 0.330

5.000 97.450 96.000 -1.488

0.100 132.620 132.900 0.211

Simulation

Measurement


Time

4.980us 5.000us 5.020us 5.040us 5.060us4.965us

V(2) V(3)/2

0V

-4V

-8V

-12V

V3

0Vdc

0

open

0

open

RL

6.1

L1

50nH

2

3

0

R1

4.7

Ropen100MEGR2

4.7

0

TPC8406-H

L2

30nH

open

0

VDD

-20.15

open

open

V1

TD = 5u

TF = 6nPW = 5uPER = 10u

V1 = 0

TR = 6n

V2 = -20

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=-3.3 A, VDD=-20V VGS=0/-10V

Measurement Simulation Error(%)

ton 12.000 ns 11.985 ns -0.125

VGS

ID

Vg = 0/-10.0V

VDD = -20V


V_V2

0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V -1.6V -1.8V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

-12A

-14A

-16A

-18A

-20A

open

V1-4.5Vdc

R1100MEG

0

open

open

open

0

TPC8406-H

open

V210Vdc

V3

0Vdc

Output Characteristic


Evaluation circuit

VGS=-2.4V

-2.8V

-3.0V

-4.0 V -3.4V

-3.2V

4.5V 10V

-2.6V


OPEN

0

OPEN

V3

0Vdc

OPEN

OPENOPEN

0

R2

1MEG

R1

0.01m

U30TPC8406-H

V2

0Vdc

V_V3

0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V 1.1V

I(V2)

-100mA

-20A

Forward Current Characteristic


Evaluation Circuit



Simulation Result

Ifwd(A) Vfwd(V)

Measurement Vfwd(V)

Simulation %Error

-0.100 0.615 0.617 0.325

-0.200 0.647 0.643 -0.618

-0.500 0.680 0.679 -0.147

-1.000 0.703 0.709 0.853

-2.000 0.749 0.744 -0.668

-5.000 0.800 0.804 0.500

-10.000 0.870 0.867 -0.345

-20.000 0.950 0.951 0.105


V1

TD = 5.0799n

TF = 10n

PW = 15u

PER = 100u

V1 = {-9.7}

TR = 10n

V2 = {10.6}

00

R1

50

D8406-HP_PRO

Time

14.96us 15.00us 15.04us 15.08us 15.12us 15.16us

I(R1)

-400mA

0A

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation


trj 8.800 ns 42.800 ns 0.011

trb 34.000 ns 42.800 ns -0.062

trr 42.800 ns 42.800 ns -0.047


Reverse Recovery Characteristic Reference

Trj=8.8(ns) Trb=34.0(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


R2

1MEG

U30

TPC8406-H

OPENV1

0Vdc

0

OPEN

R1

0.01m

0

OPEN

OPEN

OPEN

OPEN

OPEN

V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference


N-Channel Model

Transconductance Characteristic


Comparison table

Id(A) gfs


0.500 5.556 5.814 4.643

1.000 8.333 8.000 -3.996

2.000 10.530 10.929 3.788

5.000 16.129 16.234 0.649


V_V1

0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V 5.5V

I(V3)

0A

2.5A

5.0A

7.5A

10.0A

12.5A

15.0A

17.5A

20.0A

22.5A

25.0A

27.5A

30.0A

open

open

open

open

R1100MEG

V110Vdc

open

V210Vdc

0

0

U39

TPC8406-H

V3

0Vdc

Vgs-Id Characteristic


Evaluation circuit



Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

1.000 2.420 2.455 1.426

2.000 2.580 2.562 -0.694

5.000 2.770 2.786 0.585

10.000 3.020 3.055 1.169

20.000 3.470 3.469 -0.032


V3

0Vdc

R1100MEG

0

V14.5Vdc

V210Vdc

open

open

open

open

open

U39

TPC8406-H

0

V_V2

0V 50mV 100mV 150mV 200mV 250mV 300mV 350mV 400mV 450mV

I(V3)

0A

0.5A

1.0A

1.5A

2.0A

2.5A

3.0A

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=3.3A, VGS=4.5V Measurement Simulation Error (%)

RDS (on) 27.000 m 27.000 m 0.000


Time*1ms

0 2n 4n 6n 8n 10n 12n 14n 16n 18n 20n

V(W1:2)

0V

2V

4V

6V

8V

10V

12V

14V

16V

18V

20V

open

D1

Dbreakopen

TPC8406-H

open

0

open

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n-

+W1

ION = 0uAIOFF = 1mW

I2

6.5Adc

V132Vdc

V2

0Vdc

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=32V,ID=6.5A ,VGS=10V


Qgs 2.100 nC 2.117 nC 0.810

Qgd 2.700 nC 2.703 nC 0.111

Qg 11.000 nC 11.036 nC 0.327

VDD=32V

16V

8V


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)


0.100 288.8 290.000 0.416

0.300 267.75 268.000 0.093

0.600 217.5 220.000 1.149

1.000 172.5 172.000 -0.290

3.000 122.3 121.200 -0.899

6.000 69.48 68.000 -2.130

10.000 40.59 41.490 2.217

Simulation

Measurement


Time

4.980us 5.000us 5.020us 5.040us 5.060us4.965us

V(2) V(3)/2

0V

4V

8V

12V

R2

4.7

L1

50nHopen

VDD

20.15

TPC8406-H

open

V3

0Vdc

0

L2

30nH

2

3

RL

6.1

V1

TD = 5u

TF = 6nPW = 5uPER = 10u

V1 = 0

TR = 6n

V2 = 20

R1

4.7

open

open

0

0

0

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=3.3 A, VDD=20V VGS=0/10V

Measurement Simulation Error(%)

ton 9.000 ns 9.039 ns 0.433

VGS

ID

Vg = 0/10.0V

VDD = 20V


V_V2

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V

I(V3)

0A

2A

4A

6A

8A

10A

12A

14A

16A

18A

20A

V210Vdc

0

TPC8406-H

V3

0Vdc

V14.5Vdc

open

open

open

open

Output Characteristic


Evaluation circuit

VGS=2.6V

2.8V

3.0V

3.2V

4.0 V

3.6V

3.4V

3.8V

4.5V 10V


R1

0.01m

V3

0Vdc

OPENOPEN

U30TPC8406-H

OPEN

V2

0Vdc

0

OPEN

V_V3

0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V

I(V2)

100mA

1.0A

10A

30A

Forward Current Characteristic


Evaluation Circuit



Simulation Result

Ifwd(A) Vfwd(V)

Measurement Vfwd(V)

Simulation %Error

0.100 -0.600 -0.602 0.275

0.200 -0.625 -0.625 -0.062

0.500 -0.652 -0.652 0.099

1.000 -0.680 -0.681 0.161

2.000 -0.720 -0.718 -0.305

5.000 -0.780 -0.782 0.224

10.000 -0.850 -0.849 -0.073

20.000 -0.950 -0.950 0.000


0

D8406-HN_PRO

0

R1

50

V1

TD = 5.0799n

TF = 10n

PW = 15u

PER = 100u

V1 = {-9.7}

TR = 10n

V2 = {10.6}

Time

14.96us 15.00us 15.04us 15.08us 15.12us 15.16us

I(R1)

-400mA

0A

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation


trj 7.200 ns 7.237 ns 0.514

trb 32.000 ns 31.591 ns -1.278

trr 39.200 ns 38.828 ns -0.949


Reverse Recovery Characteristic Reference

Trj=7.2(ns) Trb=32.0(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


U30

TPC8406-H

OPEN OPEN

OPEN OPEN

0

OPEN

V1

0Vdc

R1

0.01m

OPEN

V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference

Technology

SPICE MODEL of TPC8406-H (Professional+BDP N&P Model) in SPICE PARK