SPICE MODEL of SSM5H05TU (Standard+BDS+SBDP Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

COMPONENTS: Power MOSFET (Standardl) /

Schottky Rectifier (Professional)

PART NUMBER: SSM5H05TU

MANUFACTURER: TOSHIBA

Body Diode (Standard) / ESD Protection Diode

Device Modeling Report

Bee Technologies Inc.


MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


BODY DIODE MODEL

Circuit Configuration

Pspice model parameter

Model description

IS Saturation Current

N Emission Coefficient

RS Series Resistance

IKF High-injection Knee Current

CJO Zero-bias Junction Capacitance

M Junction Grading Coefficient

VJ Junction Potential

ISR Recombination Current Saturation Value

BV Reverse Breakdown Voltage(a positive value)

IBV Reverse Breakdown Current(a positive value)

TT Transit Time

SSM5H05TU


Transconductance Characteristic Circuit Simulation Result

Comparison table

ID(A) Gfs

Error (%) Measurement Simulation

0.500 2.220 2.190 -1.351

1.000 3.100 3.064 -1.161

2.000 4.260 4.266 0.141


Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

Vgs

0Vdc

Open

Vds

3VdcU6SSM5H05TU

0

Open

open

V2

0Vdc

RS

100MEG

0


Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

0.010 0.930 0.931 0.107

0.020 0.950 0.957 0.736

0.050 1.000 1.010 1.000

0.100 1.050 1.070 1.904

0.200 1.150 1.159 0.782

0.500 1.320 1.327 0.530

1.000 1.510 1.520 0.662

2.000 1.800 1.800 0.000


VD10Vdc

VG2.5Vdc

0

R1

100MEG

OPENOPEN

V1

0Vdc

OPEN

U2

SSM5H05TU

0

Id-Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=0.75A, VGS=2.5V Measurement Simulation Error (%)

RDS (on) 154.00 m 154.00 m 0.00


Id-Rds(on) Characteristic Reference


Time*1ms

0 0.5n 1.0n 1.5n 2.0n 2.5n 3.0n 3.5n

V(W1:2)

0V

2V

4V

6V

8V

10V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=10V,ID=1.5A Measurement Simulation Error (%)

Qgs 0.250 nC 0.245 nC -2.000

Qgd 0.565 nC 0.560 nC -0.885

0

Open

0

open

Open

RS

100MEG

D1

Dbreak

U5SSM5H05TU

V110Vdc

I21.5Adc

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n

-

+W1

ION = 0uAIOFF = 1mAW


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.10 109.00 109.80 0.73

0.20 104.00 104.70 0.67

0.50 94.00 93.62 -0.40

1.00 80.00 80.23 0.29

2.00 63.00 64.13 1.79

5.00 43.00 43.04 0.09

10.00 30.00 30.11 0.37

20.00 20.00 20.25 1.25

Simulation

Measurement


Time

4.97us 4.99us 5.01us 5.03us 5.05us 5.07us 5.09us

V(2)*4 V(3)

0V

4V

8V

12V

RG

4.7

0

L1

30nH

open

U5SSM5H05TU V1

10Vdc

RS

100MEG

R2

13.35

0

L2

30nH

R1

4.7

Open

Open

V2TD = 2u

TF = 5nPW = 10uPER = 30u

V1 = 0

TR = 5n

V2 = 5

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=0.75A, VDD=10V VGS=2.5V

Measurement Simulation Error(%)

ton 15.5 ns 15.55 ns 0.322

VGS

ID Vg = 0/2.5V

VDD = 10V


V_V2

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V

I(V3)

0A

0.5A

1.0A

1.5A

2.0A

2.5A

3.0A

3.5A

4.0A

4.5A

5.0A

Output Characteristic


Evaluation circuit

VGS=1.8V

2.4V

2.0V

2.2V

Open

Vgs

0Vdc

Open

Vds

0Vdc

0

open

0

R1

100MEG

V2

0Vdc

U5SSM5H05TU


Output Characteristic Reference

VGS=1.8V

2.4V

2V

2.2V


0

Open

R1

0.01m

U6SSM5H05TU

0

VD

0Vdc RS

100MEG

open

Open

BODY DIODE SPICE MODEL

Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit



Simulation Result

Ifwd(A) Vfwd(V)

Measurement Vfwd(V)

Simulation %Error

0.010 0.590 0.591 0.169

0.020 0.600 0.603 0.500

0.050 0.620 0.622 0.323

0.100 0.640 0.639 -0.156

0.200 0.660 0.659 -0.152

0.500 0.690 0.689 -0.145

1.000 0.710 0.713 0.423

2.000 0.740 0.738 -0.270


Forward Current Characteristic Reference


open

R1

50

0

0

V1

TD = 0

TF = 10nsPW = 1usPER = 100us

V1 = -9.4v

TR = 10ns

V2 = 10.6v

Open

U6SSM5H05TU

Open

RS

100MEG

Reverse Recovery Characteristic


Evaluation circuit

Compare Measurement vs. Simulation

trr Measurement Simulation Error(%)

trj+trb 16 ns 16 ns 0


Reverse Recovery Characteristic Reference

trj=6.4(ns) trb=9.6(ns) Conditions:Ifwd=Irev=0.2(A),Rl=50

Relation between trj and trb

Measurement

Example


ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic


Evaluation Circuit

R1

0.01m

RS

100MEG

0

Open

U5SSM5H05TU

Open

V1

0Vdc

0

open


Zener Voltage Characteristic Reference


R1

0.01m

open open

V10Vdc

0

0open

U2SSM5H05TU

open

RS

100MEG

DIODE SCHOTTKY SPICE MODEL Forward Current Characteristic


Evaluation Circuit



Simulation Result

Ifwd (A)

Vfwd (V)

%Error Measurement Simulation

0.001 0.120 0.120 0.000

0.002 0.138 0.138 0.364

0.006 0.170 0.166 -2.353

0.010 0.188 0.182 -3.298

0.022 0.214 0.207 -3.185

0.052 0.240 0.238 -0.668

0.099 0.261 0.269 2.874

0.200 0.300 0.310 3.333

0.500 0.437 0.429 -1.739


Forward Current Characteristic Reference


Junction Capacitance Characteristic Circuit Simulation Result

Evaluation Circuit

U2SSM5H05TU

openopen

0

RS

100MEG

open

V2

0Vdc

0

V1

TD = 0

TF = 10nsPW = 50usPER = 10us

V1 = 0

TR = 1us

V2 = 5

open



Simulation Result

Vrev(V)

Cj(pF)


0.000 83.209 83.209 0.000

0.100 81.209 82.242 1.272

0.200 79.273 80.200 1.169

0.500 72.172 73.355 1.639

1.000 60.129 62.007 3.123

2.000 44.904 46.502 3.559

5.000 23.041 23.742 3.042


Reverse Characteristic Circuit Simulation Result

Evaluation Circuit

V1

0Vdcopenopen

0

RL

0.1m

U2SSM5H05TU

0

open

RS

100MEG

open



Simulation Result

Vrev(V) Irev (uA)


4.00 11.60 11.89 2.50

6.00 13.70 13.25 -3.28

8.00 15.80 15.41 -2.47

10.00 17.90 18.00 0.56


Reverse Current Characteristic Reference

Technology

SPICE MODEL of SSM5H05TU (Standard+BDS+SBDP Model) in SPICE PARK