SINGULUS NDT

September 2010

- 1 -

ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

TIMARISLinear Dynamic Deposition Technology

forProduction of Spintronic Devices

W. Maass, B. Ocker, J. LangerSingulus Technologies AG, Germany

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

Singulus – The Company

Public traded: SNG

Employees WW: 572 (Singulus Group at December 31st, 2009; 487 FTE after divestiture of Hamatech APE)

Revenue WW: 116.6 mio € (2009)

Sales/Service: Locations WW

Core Business: Optical Media

Diversification: Solar (Acquisition of Stangl AG)

Business UnitNano Deposition Technologies (NDT)

Germany, Kahl am Main near Frankfurt

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

TIMARIS

Motivation:

Essential part of many Spintronic Devices are TMR (or GMR) layer stacks

These layer stacks have to be prepared and manufactured on Ø200mm or Ø300mm wafers

R&D as well as Production related criteria will apply for any deposition tool to be used

The special design of these TMR Layer stacks require a specialized deposition system

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

Pinned Layer 1 (CoFe)

Pinned Layer 2 (Co60Fe40)

Free Layer 2 (NiFe)

Capping Layer (Ta)

Antiferromagnet (PtMn, IrMn)

Seed Layer 2 (NiFe)

Contact (Cu, Al)

Buffer (Ta)

Seed Layer 1 (Ta, NiFeCr)

Free Layer 1 (CoFe, CoFeB)

Barriere (MgO, Al2O3)

AAF Spacer (Ru)

2-5 nm

40-60 nm

2-5 nm

2-5 nm10-25 nm

0.8-1.5 nm0.4-1.5 nm

2-3 nm

2-3 nm

2-3 nm0.7 nm

5-15 nm

8 different materials (or even more ??) in the TMR layer stack !

Production of MRAM and Spintronic Devices on Ø200 mm or Ø300 mm wafers!

MRAM Technology: Field Induced Switching

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

TIMARIS: Typical R&D / Production Criteria

TMR Wafer Production (MRAM and Spintronic Devices)

Requirements for the Deposition Process Tight Thickness Control of Ultra-Thin Films

Thinnest Film < 0.1 nm; Smallest Thickness Step: < 0.01 nm Reliable & effective manufacturing of multi – layers of sub – nanometer

individual thickness including ferromagnetic films Very stable and reliable TMR performance High MgO deposition rate In – situ wafer annealing

Heating up to 600°C and cooling prior to deposition of certain films Extremely short latency between heating/cooling and deposition

Process advantage for L01 formation in perpendicular TMR designs

High Yield/Wafer by uniform TMR & Magnetic Properties Full flexibility regarding PVD – mode for all targets: DC, pulsed DC, RF

Throughput, Cost of Ownership

Particle, Contamination, ...

SINGULUS NDT

September 2010

- 6 -

ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

TIMARIS: LDD Process technology

Deposition Area

Wafer Travel

Static DepRate

Magnet Array

Sputter Target

Wafer

Deposition technique: Linear PVD Magnetron and linear movement of wafer:

Linear Dynamic Deposition (LDD)

• Short Target-Substrate Distance:- Good Coating Efficiency

• Thickness adjusted by wafer speed:- Tight control & repeatability

• Multi-directional coating:

- Smooth films and Interfaces

• Leakage field of cathode parallel to wafer travel direction:

- Ideal symmetry for magnetic film applications

• Stationary Aligning Magnetic Field (AMF):

- AMF can be optimized with cathode

- Robust and reliable design

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

A Proven Deposition Tool for TFH, MRAM and other Semiconductor Applications

TIMARIS

300/200/150/100mm PVD Bridge System

TIMARIS: 30 years of Experience

In its history the NDT team has designed, built and run different types of production tools (PVD, IBD, CVD) for

Thin Film Head Manufactering (e.g. Ferro – Magnetic films and film stacks) Flat Panel Display (large area deposition) Semiconductor (e.g. Metallization)

TIMARIS

SINGULUS NDT

September 2010

- 8 -

ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

TIMARIS: Photography

Multi Target ModuleTop: Target Drum with 10 rectangular cathodes; Drum design ensures easy maintenance;Bottom: Main part of the chamber containing LDD equipment

Transport Module(UHV wafer handler MX700)

Soft-Etch Module(PreClean, Surface Treatment)

Cassette Modules(according to Customer request)

Ultra – High – Vacuum Design: Base Pressure 5*10-9 Torr (Deposition Chamber)

High Throughput: 10 Wafer/Hour (NiFe 2.5nm/CoFe70 250nm)

High Tool Availability: Maintenance friendly Design

High Reliability: Solid and Well Engineered Design Up-Time: 90%, MTBF: 150h, MTTR: 3h

RF – Equipment(Match – Box, RF - Switches)

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

2 x Multi-Target-Modules with 10 Targets each

1 x Combi-Process-Module (CPM)

1 x Rotating Substrate Module (RSM) w/ one PVD and one Ion Source

ASYS UHV Transport Module incl. single port EFEM/FOUP

21 PVD cathodes in one system

(configuration can be modified according to customer request)

Tool Configuration for advanced Thin Film Head or Semiconductor R&D:•Processing of wafers up to Ø300mm

TIMARIS: Example for Layout

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

TIMARIS: Modularity

Rotating Substrate Module (RSM):Rotating substrate deposition

Tilting of substrate wrt. process direction

Multiple process options depending on the installed process equipment (not all of the shown options can be combined):

Up to six (6) PVD cathodes (DC, pulsed DC, RF), target diameter 125mm (5”) or below w/ cathode shutters

Up to two (2) PVD cathodes (DC, pulsed DC, RF), target diameter 320mm (12”) w/ cathode shutters

One (1) Ion source according to specification

Thin film characterization metrology

Substrate heating (up to 450°C)

Remote plasma / Natural (O2) oxidation

Co – sputtering

Con – focal sputtering

Cathode – Substrate – Distance can be changed (by adapter)

Base pressure 10-8 Torr

In-situ Aligning Magnetic Field

(1 RSM module in design phase to be manufactured)

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

Magnetic Requirements:

Alignment across Wafer

Specification:

Easy Axis deviation < +/- 2°

TIMARIS: LDD Process technology

Example: Seed/Fe70Co 250nm

MOKE measurements, 49 points,

Measured alignment of the Easy Axis across wafer:

50

100

150

200

250

50 100 150 200 250

X - position [mm]

Y -

po

siti

on

[m

m]

CoFe

Seed

TIMARIS

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

Example: Seed/Fe70Co 250nm deposited not by TIMARIS

MOKE measurements, 49 points,Alignment of the Easy Axis across wafer

CoFe

Seed

50.0

100.0

150.0

200.0

250.0

50.0 100.0 150.0 200.0 250.0

X position [mm]

Y p

osi

tio

n [

mm

]Process technology by Circular Cathodes

Remark: The shown data are to demonstrate the principal issues related with the discussed deposition technology. It is not argued, that certain process results cannot be achieved at all with the respective technology!

Comparison with Competition

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

TIMARIS: MgO – TMR, Summary

MgO – Barrier, TMR vs. RA: Typical layer stack: Ta5/PtMn20/CoFe2.3/Ru0.8/CoFeB2.2/MgO1.2/CoFeB3.0/Ta10 (nm)

SINGULUS NDT

September 2010

- 14 -

ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-150 -100 -50 0 50 100 150

Distance from centre [mm]

RA

[no

rma

lize

d]

5Ohmµm²

26Ohmµm²

parallel stage movement

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-150 -100 -50 0 50 100 150

Distance from centre [mm]

RA

[no

rmliz

ed

]

5Ohmµm²

26Ohmµm²

perpendicular stage movement

3 Ta / 16 PtMn / 2.5 CoFe30 / 0.85 Ru / 2.4 Co40Fe40B20 / rf-MgO / 2.0 Co40Fe40B20 / 10 Ta

Annealing: 1.0 Tesla, 360°C, 2h

RA: 2.9%RA: 3.2%

RA: 3.7%RA: 4.3%

TIMARIS: Uniformity of RF sputtered MgO

perpendicular

parallel

Ø300mm

5µm²:(Lead: 5 Ta / 50 CuN / 3 Ta / 50 CuN)

RA uniformity : 3.8% (1)MR uniformity : 3.2% (1)

MgO :thickness: 0.84 nmth. uniformity: 0.025 nm (MaxMin)th. uniformity: 0.61% (1)

26µm²:(Lead: 5 Ta / 30 CuN /)

RA uniformity : 4.1% (1)MR uniformity : 2.8% (1)

MgO :thickness: 1.06 nmth. uniformity: 0.03 nm (MaxMin)th. uniformity: 0.53% (1)

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

Perpendicular Magnetic Anisotropy (PMA)

Perpendicular to plane In-plane

PMA: Sub / Seed / [Co (0.3nm)/ Pd (1.0nm)] x 3/ Ta (10 nm)VSM measurements

TIMARIS: very tight control of Co and Pd thickness to adjust perpendicular anisotropy

Field annealing: 1.0 Tesla, 300°C, 2h

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

Deposition of Wedge-Films by LDD Technology

Variable film thickness across wafer for thickness optimization by changing wafer speed during deposition.

Range 1.0nm to 2.0nm is example only !!

TIMARIS: MgO – TMR, Wedge Technology

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

TIMARIS: MgO – TMR, Wedge Technology

Layer stacks:

Etch/5Ta/50CuN/3Ta/50CuN/3Ta/16PtMn/2CoFe30 /0.9Ru/2.3Co40Fe40B20/wedge MgO/2.3Co40Fe40B20/

10Ta/30CuN/7Ru (nm) Co40Fe40B20 (A), (B)

Etch/5Ta/45CuN/3Ta/45CuN/3Ta/16PtMn/2CoFe30 /0.9Ru/2.3Co60Fe20B20/wedge MgO/2.3Co60Fe20B20/

10Ta/30CuN/7Ru (nm)

Wedge Technology:

20 – 30 data points with different MgO thickness by

deposition of one wafer only

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

TMR with Perpendicular Magnetic Anisotropy (PMA)

Deposition of different materials on hot substrates:Goal short temperature transitions

Principle:

TIMARIS: Substrate Heating Technology(Patent pending)

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

TMR with Perpendicular Magnetic Anisotropy (PMA)

Deposition of different materials on hot substrates:Goal short temperature transitions

Experimental result (example):

0

50

100

150

200

250

300

0 100 200 300 400

Time [sec]

Tem

pe

ratu

re [

°C]

Heating

Cool down

Temperatures up to 450°C

Short heating and cooling time

Heating and cooling within the deposition module resulting in very short latency time between heating/cooling and deposition

He

ate

r O

N

Clo

se

d l

oo

p c

trl

TIMARIS: Substrate Heating Technology(Patent pending)

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

Heating Experiments :

Short temperature rise time

TIMARIS: Substrate Heating Technology(Patent pending)

Conditions:

Substrate: Ø200mm Si wafer

Extra data point: 100nm Ru coated( not calibrated)

Power of heater: 50%

Temperature start point: 100°C

Closed loop control: not optimized

0

10

20

30

40

50

60

0 200 400 600 800

Temperature Setpoint [°C]

Hea

t-u

p T

ime

[s]

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

Heating Experiments :

Temperature rise time, effect of coating:

TIMARIS: Substrate Heating Technology(Patent pending)

Conditions:

Substrate:

a) Ø200mm Si wafer

b) Ø200mm Si wafer + 100nm Ru( not adjusted)

Temperature start point: approx. 100°C

Closed loop control: not optimized

0

100

200

300

400

500

600

0 10 20 30 40 50 60

heat up time [s]

Py

rom

ete

r te

mp

ert

au

re [

°C]

blank Si wafer

Si Wafer + 100nm Ru

SINGULUS NDT

September 2010

- 22 -

ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

Heating Experiments :

Cooling after heating

TIMARIS: Substrate Heating Technology(Patent pending)

Conditions:

Substrate: Ø200mm Si wafer

Conclusion:

Temperature drop has to be considered

Deposition of approx. 3nm of ferromagnetic material can be done in ca. 15 sec.

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla

Adjustment of alloy concentration for TMR films with Perpendicular Magnetic Anisotropy (LDD – Technology)

Deposition of FexPd(1-x) or FexPt(1-x) as well as other alloys requires in

many cases a carefully adjustment of the material concentration to get the best device performance.

TIMARIS’ “Gradient Concentration Alloy” capability allows to deposit films on wafers with varying concentration across the wafer. The gradient of this concentration variation can be adjusted.

TIMARIS: Gradient Concentration Alloy films(Patent pending)

Fe - rich Pd - rich

SINGULUS NDT

September 2010

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ITRS Workshop on Emerging Spin and Carbon Based Emerging Logic Devices, Sept. 17, 2010, Sevilla