Status of DEPFET sensors

LCWS 2006, Bangalore,

Status of DEPFET sensors

JRA1 Design Review Meeting Geneva, 28.01.2007

Stefan Rummelon behalf of the DEPFET collaboration

JRA1 Design Review, 25.01.2007 Stefan Rummel; MPI for Physics

Overview

• DEPFET principle• Status of the PXD5 production• Goals of the new production• Wafer design, Chip overview• R&D towards an ILC module concept• System aspects - new Hybridboard


DEPFET principle

• Combination of detector grade silicon with first p-FET amplification stage in each pixel

• Potential minimum for electrons is created under the channel by sideward depletion and an additional n-doping

• Electrons in the “internal gate” modulate the transistor current

• Signal charge is removed via a clear contact

• Large sensitive volume due to the fully depleted bulk

• Low noise caused by a small input capacitance and internal amplification

• Transistor can be switched off by external gate – charge collection is then still active!


Production status - PXD5

• All implantations done

• Polysilicon layers are deposited and structured

• To be done:• Contact holes• Metal layer 1 and 2• Backside (double sided process)

New devices available around June 07!


Goals of the PXD5 production

• Technological improvements

• Larger matrices

• Long matrices (full ILC drain length)

• Wide matrices (full Load for Switcher Gate / Clear chips)

• Performance improvements:

• Reduce clear voltages

• Charge collection

• Small pixels (20µm x 20µm)

• Increase internal amplification (gq)

• Bump bonding test structures


• PXD4: matrices with 6µm gate length

• PXD5: matrices with gate length down to 4µm

New feature – smaller gates

PXD4

PXD5

• Aim for significant improvement in gain!• Less sensitive to external noise!


PXD5 Wafer

wide arrays(512 x 512, full ILC)

various newstandard arrays(64 x 256 pixels,

down to 20x20µm2)

standard arrayscompatible to

existing hybrids

Rainer Richter, MPI HLL

long arrays(256 x 1024, ½ ILC)


Standard detector

• 128 (x) x 64 (y) double pixels = 64 x 256 pixels• Various pixel sizes 32x24µm², 24x24µm², 20x20µm² chip size 7x10mm²• 2 x Switcher3, 1 x CURO• 50 devices per wafer• Provided in many design variations


Standard detector compatible to old hybrids

• 64 (x) x 64 (y) double pixels = 64 x 128 pixels• Pixel size 32x24µm², chip size 7*7mm• 2 x Switcher2, 1 x CURO• 24 devices per wafer• Devices already incorporate new design features!

Working systems with this devices will be available soon after the production is completed!


Wide detectors

• 512 (x) x 256 (y) double pixels = 512 x 512 pixels (full ILC width). Pixel size 32 x 24 µm²

• 2 x 2 x Switcher 3, 8 x CURO• 4 devices per wafer• Study full load on Switcher signals


Long detectors

• 128 (x) x 1024 (y) double pixels = 128 x 2048 pixels (full ILC RO length). Pixel 24 x 24 µm²

• 2 x 8 x Switcher 3, 2 x CURO• 2 devices per wafer• Study full load on drain signals to CURO


R&D towards an ILC module concept

• Thinning technology shows significant progress• Full scale mechanical samples • Thinned (50µm) diodes show excellent leakage currents• Thinned DEPFET devices within the PXD6 production are possible!


Next generation steering chips

• CURO successor • Better noise performance• ADC for every channel

• In work

• Switcher3

• 128 channels

• Radiationhard design

• 10V voltage swing

• Already available!


New Hybrid boards

• Larger devices need more steering- and readout chips

• Require changes on:

• Hybrid level

• System level

• Redesign of the Hybrid will start in February

Hybrid board V2.0


Summary

• New production is approximately ready in June • Working systems with PXD5 devices will be

available soon after production is finished• DEPFET is on a good way towards measurements

with the Demonstrator


Backup….


The PXD5 Wafer

2 long arrays (256x1024 – half ILC length) 24x24 µm² cells, chip size 8.5x55mm²4 wide arrays (1024x256 – full ILC width) 32x24 µm² cells, chip size 21x20mm²50 128x128 test array for new hybrids 32x24µm², 24x24µm², 20x20µm² chip size 7x10mm² 1 128x128 bump bond test array 24x24 µm² cells, chip size 8.5x10mm²24 128x64 test arrays for old hybrids PXD4-cells, 32x24µm², 24x24µm²45 16x6 mini matrices 32x24µm², 24x24µm² chip size 3.5x4mm²7 different chips with double cells geometry var. of depmos and clear reg. chip size 7x4mm²2 mixed chips (double cells and 1 minimatrix) chip size 5x5mm²3 transistor chips, different p- and nMOS chip size 7x4mm²

10 technology chips test structures 23 G.L. chips 2 XEUS chips for simul. clear

Documents

Status of DEPFET sensors