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SPICE MODEL of TPCF8A01 (Professional+BDS+SBDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPCF8A01 MANUFACTURER: TOSHIBA Body Diode (Standard) / ESD Protection Diode / Schottky Barrier Diode (Standard)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
POWER MOSFET MODEL
Pspice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Body Diode Model
Pspice model parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
0A
2A
4A
6A
8A
10A
OPEN
V310Vdc
OPEN
OPENV2
0Vdc
U5
0
V110Vdc
0
OPENOPEN
R1
100M EG
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
0.10 1.30 1.30 -0.32
0.20 1.33 1.33 0.07
0.50 1.40 1.40 0.09
1.00 1.49 1.48 -0.51
2.00 1.60 1.60 0.00
5.00 1.84 1.84 0.19
10.00 2.15 2.13 -0.73
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
OPEN
U2
TPCF8A01
0
OPEN
OPEN
VD10Vdc
VG2.5Vdc
V1
0Vdc
0
OPEN
OPEN
R1
100MEG
Id-Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=1.5A, VGS=2.5V Measurement Simulation Error (%)
RDS (on) 50.00 m 50.00 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
-
+W1
ION = 0uAIOFF = 1mAW
V116Vdc
I1
TD = 0
TF = 10nPW = 600uPER = 1000u
I1 = 0
I2 = 1m
TR = 10n
U2
TPCF8A01
R1
100MEG
0
OPEN
OPEN
I23Adc
0
OPEN
D1
Dbreak
OPEN
OPEN
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=16V,ID=3A ,VGS=5V
Measurement Simulation Error (%)
Qgs 1.3 nC 1.2912 nC -0.677
Qgd 2.1 nC 2.0812 nC -0.895
Qg 7.5 nC 7.5000 nC 0.000
VDD=16V
4V
8V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Capacitance Characteristic
Simulation Result
VDS(V) Cbd(pF)
Error(%) Measurement Simulation
0.50 55.00 54.65 -0.64
1.00 45.00 45.70 1.56
2.00 36.00 35.50 -1.39
5.00 23.00 22.93 -0.30
10.00 15.00 15.53 3.53
20.00 10.00 10.00 0.00
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Time
5.00us 5.05us 5.09us
V(2) V(3)/2
0V
2.0V
4.0V
6.0V
7.0V
0
OPEN
L2
0.03uH
U8
OPEN
0
R1
4.7
V1
TD = 5u
TF = 7nPW = 5uPER = 100u
V1 = 0
TR = 6n
V2 = 10
2
L1
0.03uH
VDD
10
OPEN
R2
4.7
3
0
Rop
100MEG
OPEN
0
OPEN
V3
0Vdc
0
RL
6.67
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=3A, VDD=15V VGS=0/5V
Measurement Simulation Error(%)
td (on) 7.50 ns 7.50 ns 0.00
VGS
ID
VGS = 5V
VDS = 10V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
OPEN
U2
TPCF8A01
0
OPEN
OPEN
VD10Vdc
VG2.5Vdc
V1
0Vdc
0
OPEN
OPEN
R1
100MEG
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=1.4V
1.5V
1.6V
1.7V
1.8V
1.9V
2.0V
2.1V
3.0V 10
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
BODY DIODE SPICE MODEL
Body Diode Model
Pspice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
*$ *PART NUMBER: TPCF8A01 *MANUFACTURER: TOSHIBA *VDSS=20V, ID=3A *All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 .MODEL D8A01 D + IS=2.5659E-6 + N=2.1585 + RS=13.923E-3 + IKF=3.6193 + CJO=3E-12 + ISR=0 + BV=20 + IBV=1E-6 *****BODY DIODE STANDARD MODEL****
*$
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
0
V1
0Vdc
OPEN
OPEN
OPEN
R2
0.01mR1
100MEG
0
OPEN
OPEN
U2
TPCF8A01
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Ifwd(A) Vfwd(V)
Measurement Vfwd(V)
Simulation %Error
0.10 0.60 0.59 -0.50
0.20 0.63 0.63 0.48
0.50 0.69 0.69 0.14
1.00 0.74 0.74 0.00
2.00 0.80 0.80 0.00
5.00 0.91 0.91 0.44
10.00 1.05 1.05 -0.10
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
R1
100MEG
U2
TPCF8A01
OPEN
V2
TD = 0
TF = 10nPW = 20uPER = 50u
V1 = -10
TR = 10n
V2 = 10.6
OPEN
OPEN
0
R2
50
OPENOPEN
0
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr=trj+trb 17.00 ns 17.13 ns 0.78
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Recovery Characteristic Reference
Trj=6.6(ns) Trb=10.4(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
ESD PROTECTION DIODE SPICE MODEL
*$ *PART NUMBER: TPCF8A01 *MANUFACTURER: TOSHIBA *VGSS=12V *All Rights Reserved Copyright (C) Bee Technologies Inc. 2005 .SUBCKT DZ8A01 1 2 D1 1 3 DZ D2 2 3 DZ1 .MODEL DZ D + IS=0.01p N=0.1 ISR=0 IBV=0.001 BV=15.6 CJO=3E-12 + RS=333 XTI=0 EG=0 .MODEL DZ1 D + IS=0.01p N=0.1 ISR=0 IBV=0.001 BV=15.6 RS=0 CJO=3E-12 + XTI=0 EG=0 .ENDS
*$
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
OPEN
V1
0Vdc
OPEN
U2
TPCF8A01
R2
0.01m
OPEN
0
OPEN
OPEN
R1
100MEG
OPEN OPEN
0
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
*$ .MODEL DSB8A01 D + IS=88.198E-9 + N=1.0182 + RS=65.469E-3 + IKF=212.80 + EG=.69 + CJO=267.49E-12 + M=.48544 + VJ=.3905 + ISR=0 + BV=20 + IBV=2.5000E-6 + TT=3E-12
*****SBD MODEL*****
DIODE SCHOTTKY SPICE MODEL
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
OPEN
0
R1
100MEG
U2
TPCF8A01
V1
0Vdc
R2
0.01m
0
OPEN
OPEN
OPEN
OPEN
Forward Current Characteristic of Schottky Barrier Diode
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Ifwd (A) Vfwd (V)
%Error Measurement Simulation
0.01 0.31 0.31 0.59
0.02 0.33 0.33 0.18
0.05 0.36 0.35 -0.87
0.10 0.38 0.37 -0.43
0.20 0.40 0.40 0.10
0.50 0.45 0.44 -0.63
1.00 0.49 0.49 0.67
2.00 0.57 0.58 1.25
5.00 0.80 0.80 -0.29
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
OPENOPEN
U2
TPCF8A01
OPEN
V1
TD = 0
TF = 10nPW = 50uPER = 100u
V1 = 0
TR = 1u
V2 = 20
0
V2
0Vdc
OPEN
R1
100MEG
0
OPEN
Junction Capacitance Characteristic of Schottky Barrier Diode Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Vrev(V)
Cj(pF)
%Error Measurement Simulation
1.00 145.00 143.57 -0.99
2.00 110.00 110.40 0.37
5.00 75.00 74.44 -0.75
10.00 54.00 54.12 0.22
20.00 40.00 39.14 -2.15