Matlab/Simulink Modeling of SiC Power MOSFETs

International Review of Electrical Engineering (I.R.E.E.), Vol. 9, N. 4 ISSN 1827- 6660 July – August 2014

Copyright © 2014 Praise Worthy Prize S.r.l. - All rights reserved

671

Matlab/Simulink Modeling of SiC Power MOSFETs

Paolo Giammatteo, Concettina Buccella, Carlo Cecati Abstract – Simulation and rapid prototyping of power converters requires accurate models of all passive and active elements, which take into account most important physical parameters and not only electrical quantities. Their availability is fundamental to verify the expected behaviour of the complete system including its control algorithm without building any prototype. For this reason, due to the wide use of Simulink® in simulation of complex systems, this paper attempts to study the main characteristics of a typical Silicon Carbide (SiC) power MOSFETs and proposes its Simulink® model. The static and dynamic characteristics of the device are described by voltage and current sources which behaviour depend on temperature values. Switching power losses are considered by introducing parasitic capacitances in its equivalent circuit, thus obtaining a dynamic characteristic of the device. The proposed model has been validated using a typical 4H-SiC MOSFET (1200V, 20A) in an illustrative example consisting of a 5-level cascaded inverter. Copyright © 2014 Praise Worthy Prize S.r.l. - All rights reserved. Keywords: Silicon Carbide, Device Characterization, Device Modeling, Device Simulation,

MOSFET, Loss, Power Converter

Nomenclature α The slope of the temperature variation of the

gate threshold voltage [V°/C ] χSiC Electron affinity of the SiC [J/mol] λ Channel modulation [V-1] μ Electron mobility of SiC [m2V/s] μit Interface traps mobility [m2V/s] μph Phonon scattering mobility [m2V/s] Cb Bulk majority carrier concentration[m-3] Cdg Parasitic gate to drain capacitance [F] Cgs Parasitic gate to source capacitance [F] Ciss Parasitic input capacitance [F] Cox Oxide capacitance [F] Crss Reverse Transfer Capacitance [F] Eeff The average transverse electric field in the

MOSFET channel [V/m] Eg Band gap [J/C] Idstd Drain current at standard temperature[A] Id Drain current [A] Iload Full load darin-source current [A] K Transistor gain [A/V2] KB Boltzman constant [J/°C] L Channel length [m] ni Intrinsic carrier concentrations [m-3] q Carrier charge [C] Qb Bulk charge [C] Qf Fixed oxide charge [C] Qit Interface traps charge [C] Rg Gate resistance [Ω] T Device Temperature [°C] t Time [s] t0 Time at which the gate signal rises up[s] td Time at which the gate signal drops down [s]

Tstd Device standard temperature [°C] Vds,load Full load drain-source voltage [V] Vds,off Device off drain-source voltage [V] Vds Drain-source voltage [V] Vgs Gate-source voltage [V] Vpm Miller plateau voltage [V] Vth Threshold voltage [V] W Channel width [m]

I. Introduction High power converters are widely used many fields

including industry, transportation, oil&gas, lighting, home appliances, moreover, they are fundamental in full exploitation of distributed energy resources (DERs) and in their integration with the grid; they are also very important in ensuring high power factor and fulfilling power quality grid stability demands [1], [2], [3].

Modern systems have to be capable of handling active and reactive power demands, often to operate at high frequency and always to maintain both switching and conduction losses at lowest possible values. Fulfillment of previous requirements impose improvements in all parts including output power devices.

The emerging Silicon Carbide (SiC) and Gallium Nitrite (GaN) technologies [4], are attracting wide attention due to their new level of performance, in particular their ability to operate at high temperature, frequency and voltage [5], [6].

A synopsis of recent complementary technological developments in passives, integrated driver and protection circuitry and electronic packaging are described in [7]. Paper [8] presents the development and

Paolo Giammatteo, Concettina Buccella, Carlo Cecati

Copyright © 2014 Praise Worthy Prize S.r.l. - All rights reserved International Review of Electrical Engineering, Vol. 9, N. 4

672

experimental performance of a three-phase ac–dc–ac converter composed by SiC MOSFET, working at 250 °C junction temperature.The electromagnetic interference filter, thermal system, high temperature package, and gate drive design are discussed in detail.

Currently, SiC devices are considered excellent for power electronic applications in virtue of their extremely robust and stable behavior even at high frequency operations (above 20kHz), high voltage ratings (> 10kV) and high operating temperatures (> 100°C) [9], but until now their diffusion is quite limited, due to their high cost and the more complex driving circuit.

In particular they appear very promising in those ap-plications where traditional silicon semiconductors are affected by severe limitations such as hybrid and full electric vehicles, energy storage devices, inverters for renewable energy and for industrial drives, power sup-plies, oil&gas industry and all those high power applica-tions operating at high temperature or requiring high switching operations. As a consequence of better elec-trical/thermal performance, their use lead to significant reduction of electronic parts and of the heat-sink.

This characteristic represents a significant advantage in those applications where converter size is a critical is-sue, for instance in avionics or in automotive [10] too. Currently, a significant drawback is their cost, typically 5-10 times higher than a Si devices with similar v/i cha-racteristics, but it is expected that it will be quickly re-duced as technology will be improved and applications will grow [11].

There are many papers dealing with SiC devices: pa-per [5] presents an overview of the main available SiC devices introducing some guidelines for development of driver circuits suitable for some among the available SiC devices, [12] presents a 10kW high-power-density three-phase ac-dc-ac converter, employing SiC JFET and SiC Schottky diodes to reduce the switching losses and achieve a high operating junction temperature; paper [11] demonstrates that the application of a SiC converter in the wind generation system improves overall efficiency, provide more output power, and reduce size and cost due to the low-loss, high-frequency, and high-temperature properties of SiC devices.

Paper [13] proposes a physics-based model of a sili-con carbide bipolar junction transistor, realized using MATLAB® and Simulink®, and presents verification of its validity through experimental testing. In paper [14] CREE CMF20120D SiC MOSFETs were considered and the results shown that both the two proposed gate assist circuits improve the switching performance under differ-ent operating conditions in comparison to the conven-tional gate drive. In paper [15] a MOSFET-based gate buffer implemented in a 2µm 4HSiC process has been presented. The paper demonstrates the potential for fully integrated SiC gate drivers and identifies and addresses some of the limiting factors presented to the SiC-integrated circuit designer.

From previous analysis follows that SiC MOSFET are becoming more and more diffused, and, due to their cha-

racteristics which are quite different from traditional sili-con devices, researchers are addressing their attention to practical design issues.

On the other side, simulation of power converters is a common practice for avoiding problems in the realization of applications like the ones mentioned above, therefore, the aim of this paper is to present development, simula-tion, and validation of a complete Matlab/Simulink® model of a typical 4HSiC MOSFETs. In the following, the physical characteristics of the component are fully investigated and a complete Simulink® model is devel-oped. In order to give practical meaning and validation to the obtained results, a commercially available device has been considered as tested, i.e. the 1200V – 20A SiC MOSFET, Cree CMF20120D [16].

This component is often used in converter designs based on SiC technology. In the best of authors’ know-ledge, while some papers report modeling of SiC devices using circuit simulation software, e.g. Spice [17], until now, no one has proposed accurate SiC models devel-oped using Matlab/Simulink®. The relevance of the pro-posed model is that Simulink® is widely diffused in in-dustry and academia to implement system-level simula-tions with full integration of complex converter topolo-gies (e.g. multilevel or modular converters) employing numerous devices including SiC devices, control and modulation algorithms with circuital analysis.

Other available software tools are not so easy and po-werful as Simulink®. While preserving previous charac-teristics the proposed Simulink® block is more accurate than other models such as [18]; in fact some parameters are extracted by a fitting procedure applied to the data sheet quantities. A validation of the model is done by comparing the I-V characteristic curves obtained by si-mulations with those provided by the manufacturer [16]. A very good agreement is observed in the used range of drain-source voltage values. It is worth notice that the same model can be adopted with other SiC MOSFETs. A 5-level cascaded inverter simulation using the proposed model is also considered as example of practical applica-tion of the proposed model and the simulated results are shown.

II. SiC vs. Si Properties Silicon carbide has higher thermal conductivity, high-

er breakdown voltage, wider band-gap and an higher sa-turation velocity than the sole silicon [9], [19].

As discussed in previously cited papers, compared to Si components and for a given voltage, SiC devices with minority carriers show an increase by factor 100 in switching speed; those with majority carriers perform an improvement of 100 in strength.

For such a reason, many analysts expect that with the lowering of costs, SiC technology will spread in power electronics market. Table I summarizes and highlights the main electrical and physical properties of Si and SiC materials.



673

TABLE I ELECTRICAL AND PHYSICAL PROPERTIES OF SI AND SIC

Property Si 4H-SiC 6H-SiC 3C-SiC Energy bandgap

Eg (푒푉) 1,1 3,3 3 2,7

Critical field Ec 0,3 3,5 2,5 1,5

Saturation velocity vsat

1,00E+07

2,00E+07

2,00E+07

2,50E+07

Thermal conductivity k 1,3 3,7 3,7 3,6

III. Mathematical Model III.1. DC Static Characteristics

The N-channel SiC MOSFET modeling is complex due to the non-linear behavior of its drain current vs. drain-source voltage (Id - Vds) characteristic and the de-pendence on temperature of many electrical quantities.

The two most significant parameters, both strongly depending on temperature, are: the threshold voltage Vth and the electron mobility µ [20], respectively. The thre-shold voltage Vth can be expressed as follows [21]:

푉 = 푉 + 푉 + 훹 −푄퐶

(1)

where:

푉 = 휙 − 휙 −푄 + 푄퐶

is the flat band voltage, Vit is the SiC/SiO2 interface-trap voltage, 훹 = 2∣∣휙 ∣∣ + 6휙 is the inversion surface potential. The terms φm, 휙 = 휒 + + 푙푛 ,

φB and 휙 = represent the work function of the metal contact before the gate-oxide, the work function of the SiC, the Fermi potential in the bulk and the thermal voltage, respectively. It is worth notice that equation (1) contains a linear temperature dependence. In fact, both the terms ΨSinv and φSiC, linearly depend on temperature.

For electron mobility, surface roughness and the high interface state density play important roles in the inver-sion layer.

Experimental values of mobility in the inversion layer reported in [22] show that for each operating regions of the device (subthreshold, linear and saturation) carrier mobility increases in the working temperature range [300–500] °K [23]. This behavior is due to the decrease of the occupied trap charges density with the rising tem-perature. The consequence is that, more electrons in the channel are available at a given gate voltage, hence, when the temperature increases, a movement of Fermi level toward the band gap can be observed. At tempera-tures higher than 500 °K, the mobility decreases since lattice scattering dominates and begins to release the in-terface trap charges. A detailed study about the depen-dence of 4H-SiC MOSFET mobility on the temperature is reported in [23].

According to previous considerations, the main me-chanisms affecting carrier mobility of SiC MOSFET in-version layer are the phonon and interface traps scatter-ing. The mobility can be expressed through the Mathies-sen’s rule [24]:

휇(푇,퐸 ) ∝1

휇 (푇,퐸 )+

1휇 (푇,퐸 )

(2)

The phonon scattering mobility μph depends on the

temperature through the following expression:

휇 ∝ 푇 . (3)

For the interface traps, it is possible to consider a quite similar behavior, i.e.:

휇 ∝ 푇 (4) where β is a fitting coefficient induced by interface traps in SiC power MOSFET, carried out by the experimental data [25]. The SiC core MOSFET drain current vs. drain-source voltage (Id - Vds) characteristics are described by the following equations [18]:

퐼 = 0if 푉 < 푉 (5)

퐼 = 퐾 (푉 − 푉 )푉 −(1 + 푎)푉

2(1 + 휆푉 )

if 0 < 푉 <(푉 − 푉 )

(1 + 푎)

(6)

퐼 =퐾

2(1 + 푎)(1 + 휆푉 )(푉 − 푉 )

if 0 <(푉 − 푉 )

(1 + 푎)< 푉

(7)

In order to develop a more accurate model, the para-

meter a in the SiC MOSFET model is introduced, which takes into account the growth of the depletion layer and depends on the intrinsic structure of the SiC material and its properties. The linear temperature dependence of the threshold voltage Vth is expressed by the ideal voltage generator Etemp:

퐸푇푒푚푝 = [(푇 − 푇 )훼] (8) where Tstd is the standard temperature of the device, which is 25°C. The parameter α can be obtained from the manufacturer datasheet values as [16]:

훼 =푉 − 푉푇 − 푇

=1.8푉 − 2.5푉

125°퐶 − 25°퐶= −0.007

푉°퐶

(9)

where Vth2 and Vth1 are the threshold voltages evaluated at T2 and T1, respectively. The coefficient α represents the slope of the temperature variation of the threshold vol-



674

tage. The transistor gain K is related to the electron mo-bility μ through the following equation [20]:

퐾 = 휇퐶푊2퐿

(10)

The mobility is directly proportional to the drain cur-

rent Id and to the transconductance 푔 = as shown in

Eqs. (6) and (7). According to Eqs (2), (3) and (4), an ideal current generator FTemp can be introduced and its value can be expressed as:

퐹푇푒푚푝 = 퐼푇푇

−푇푇

.

(11)

In the previous equation, the first term represents the

interface traps scattering, while the second one is the phonon scattering. The parameters in all previous equa-tions model parameters are deduced from the manufac-turer datasheet values, except the two parameters a (eq-uations (5), (6) and (7)) and β (equation (11)), which are determined with a least square fit procedure, making a regression using the device curves given by the manufac-turer. The mathematical model of the N-channel SiC MOSFET, just described, suggests the equivalent circuit model represented in Fig. 1 [18]. Infact, both the voltage (8) and current (11) generators add their contribution in opposition to the gate voltage, for the first one, and in the same direction to the drain-source current, for the second one, respectively.

III.2. Dynamic Characteristics

In order to evaluate the SiC MOSFET energy loss dur-ing the switching transient, the dynamic SiC MOSFET circuit model shown in Fig. 2 is considered, by introduc-ing the parasitic capacitances [25]:

퐶 (푉 ) = 퐶 (푉 )–퐶 (푉 ) and

퐶 (푉 ) = 퐶 (푉 )

As it can be deduced from device datasheet, both ca-pacitances present non-linear behavior in respect of the voltage Vds [16].

The capacitance Ciss is assumed to be constant accord-ing to [16]. On the other hand, for the capacitance Cdg, and so for Crss, an average value Cdg,ave is considered as reported in [26], because of its strong dependence by Vds [16]. The turn-on transient is developed through three time intervals [27]. The first interval is called sub-threshold interval has duration t1 - t0, where t0 is the gate signal rise time:

푡 = 푅 [퐶 + 퐶 (푉 , )]푙표푔푉

푉 − 푉+ 푡

푉 = 푉 ,퐼 = 0

(12)

Fig. 1. SiC MOSFET equivalent circuit static models

Fig. 2. SiC MOSFET equivalent circuit dynamic model

In this zone, the gate voltage is lower than the gate threshold voltage, hence the device remains off.

The second interval has duration t2 - t1. In this interval, the current begins to grow till it, at time t2, reaches its full-load value (eq. (13)):

푡 = 푅 [퐶 + 퐶 (푉 , )]푙표푔 1 −푉푉

+ 푡

푉 = 푉 ,

퐼 = 퐾{푉

⎣⎢⎢⎢⎡1 − 푒푥푝

⎝

⎜⎛ −(푡 − 푡 )

푅퐶 +

+퐶 푉 , ⎠

⎟⎞

⎦⎥⎥⎥⎤− 푉 }

The third interval of duration t3 - t2, is called Miller

Plateau. The drain-source voltage begins to fall down to its full

load value reached at time t3; in this interval the gate vol-tage assumes the constant value Vpm:

푡 = 푅 퐶 ,푉 , − 푉 ,

푉 − 푉+ 푡

푉 = 푉 , − 푡푉 − 푉푅 퐶 ,

퐼 = 퐼 .

(14)

After the time t = t3, the device starts to conduct.

G

D

S

FTEMPETEMP

Id

G

D

S

FTEMPETEMP

Id

dgC

gsC



675

Also the turn-off transient is characterized by three

time intervals. The first interval has duration t4 - td, where

td is the initial time, when the gate voltage signal drop

down [27]. The gate voltage reaches the Miller Plateau

value Vpm at the time t4:

(15)

The second interval has duration t5 - t4 and is called

Miller Plateau. The drain-source voltage begins to rise up

till its off value reached at time t5:

(16)

The third interval has duration t6 - t5. The drain current

begins to drop down exponentially, until it reaches the

zero value at the time t6:

(17)

In this situation, the device is open and the conduction

is stopped.

Through the Eqs. (12) - (17), it is possible to calculate

the energy losses, according to the well-know relations

[27]:

(18)

(19)

III.3. Simulink Model

Starting from previous analysis, this manuscript pro-

poses a Matlab/Simulink® model of the CREE SiC

MOSFET. It is worth notice that such a model can be

easily adapted for describing a different family of SiC

devices, just manipulating the parameters of the model

equations. The model can be easily changed and so used

to model different SiC MOSFET devices, giving the ad-

vantage to simulate a complex power system with differ-

ent SiC MOSFET.

Fig. 3. SiC MOSFET Simulink block

As typical of Simulink®, the model is represented by a

building block and is shown in Fig. 3. There are seven

pins: Drain D, Source S, Gate G, Temperature T (i.e. the

temperature value at which the device is working during

the simulation), Drain-Source voltage Vds (which is the

voltage applied to the device), Gate voltage Vg (which is

the gate input signal given to the device) and Mode M

imposing the gate signal type (static or pulsed). As

shown in Fig. 4, it is possible to identify three distinct

parts:

• N-channel MOSFET, describing the core MOSFET

with its body diode;

• ETemp block;

• FTemp block.

Each block implements the equations of the device de-

scribed in Section III, inside the three Matlab® functions

shown in corresponding figure.

Fig. 4. Content inside SiC MOSFET Simulink block

These blocks exactly represent the static and dynamic

SiC model in one solution, as in Figs. 1 and 2. According

to the value assumed by M, it is possible to select which

configuration has to be in use (static or pulsed) and de-

cide which circuital elements have to be taken into ac-

count to execute the simulation. The development of

these three sub-blocks are shown in Figs. 5, 6 and 7, re-

spectively.

The Fig. 5 represents the ideal MOSFET core, without

any temperature dependence, which is in charge of the

main MOSFET behavior.

G

T

MD

S

dsV

gV

Copyright © 2014 Praise Worthy Prize S.r.l.

account all the aspect of the device, static and dynamic, and it is inspired to the MOSFET circuit shown in [18], with some little modifthere is the develothe MOSFET.

tively the voltage and current generators. Each block


The circuitaccount all the aspect of the device, static and dynamic, and it is inspired to the MOSFET circuit shown in [18], with some little modifthere is the develothe MOSFET.

On the other hand, the Figs. 6 and 7 represent respetively the voltage and current generators. Each block








Fig.

Fig.

The circuital design is deveaccount all the aspect of the device, static and dynamic, and it is inspired to the MOSFET circuit shown in [18], with some little modifthere is the develothe MOSFET.



Fig. 6. The voltage generator Etemp

Fig. 7. The current generator Ftemp

al design is deveaccount all the aspect of the device, static and dynamic, and it is inspired to the MOSFET circuit shown in [18], with some little modifthere is the develop



Fig. 5. The core block

6. The voltage generator Etemp

7. The current generator Ftemp

al design is deveaccount all the aspect of the device, static and dynamic, and it is inspired to the MOSFET circuit shown in [18], with some little modifi

pment of the equatio






al design is deveaccount all the aspect of the device, static and dynamic, and it is inspired to the MOSFET circuit shown in [18],

ication. Inside the Matlab Function ment of the equatio






al design is deve

account all the aspect of the device, static and dynamic, and it is inspired to the MOSFET circuit shown in [18],

cation. Inside the Matlab Function ment of the equatio


Paolo Giammatteo





al design is developed in order to take into

account all the aspect of the device, static and dynamic, and it is inspired to the MOSFET circuit shown in [18],



Paolo Giammatteo

Copyright © 2014 Praise Worthy Prize S.r.l. -




oped in order to take into account all the aspect of the device, static and dynamic, and it is inspired to the MOSFET circuit shown in [18],



Paolo Giammatteo

- All rights reserved







Paolo Giammatteo

All rights reserved




cation. Inside the Matlab Function ment of the equations which describe


Paolo Giammatteo

All rights reserved




cation. Inside the Matlab Function ns which describe


Paolo Giammatteo

All rights reserved




Paolo Giammatteo, C

All rights reserved




, Concettina Buccella

All rights reserved



On the other hand, the Figs. 6 and 7 represent respec-tively the voltage and current generators. Each block

oncettina Buccella

All rights reserved

676



c-tively the voltage and current generators. Each block

oncettina Buccella

All rights reserved

676

consists of a generator which, according to the input vaues, impose respectively the correct output voltage and currenwritten inside the Matlab Function box.

MOSFET was validated comparing the tic the manufacturer [16].

[10and 10 show the trized for applied voltage gate V125 between simulated and experimental curves obtained at low values of draintive p11, 12 and 13. It is possible to denote that the errors, in the linear region, decrease when the temperature increaes.

for = 75 percentage error in the linear region are explainable oserving that in thetance is small and the channel resistance is high, copared tmore significant contr

This results in the gradual transition from the linear rgion to the saturation region of the SiC cu

the turncording to Eqs. (18) and (19). The model was simulated under the conditions 20Fig

time obtained by simulation using the proposed model present a good agreement with the mshown in Table II.

[25],ment between computed and manufacturer data can be observed.

oncettina Buccella

All rights reserved

consists of a generator which, according to the input vaues, impose respectively the correct output voltage and currenwritten inside the Matlab Function box.

The proposed Simulink/MatlabMOSFET was validated comparing the tic curves obtained bythe manufacturer [16].

The validity intervals of the model for [10]and 10 show the trized for applied voltage gate Vg = 18 125 between simulated and experimental curves obtained at low values of draintive p11, 12 and 13. It is possible to denote that the errors, in the linear region, decrease when the temperature increaes.

Fig. 14 shows the same characteristic curves evaluated for V= 75 percentage error in the linear region are explainable oserving that in thetance is small and the channel resistance is high, copared tmore significant contr

This is due to the low channel surface mobility of SiC. This results in the gradual transition from the linear rgion to the saturation region of the SiC cu

The energy switching losses of the SiC device during the turncording to Eqs. (18) and (19). The model was simulated under the conditions 20A Figs

Through them, it is possible to obtain both the rise time obtained by simulation using the proposed model present a good agreement with the mshown in Table II.

The energy switching losses are evaluated for

[25],ment between computed and manufacturer data can be observed.

oncettina Buccella

consists of a generator which, according to the input vaues, impose respectively the correct output voltage and current to the generators, through the Eqs. (8) and (11) written inside the Matlab Function box.

The proposed Simulink/MatlabMOSFET was validated comparing the

curves obtained bythe manufacturer [16].

The validity intervals of the model for ] – [

and 10 show the trized for applied voltage gate

= 18 125 °Cbetween simulated and experimental curves obtained at low values of draintive percentage errors 11, 12 and 13. It is possible to denote that the errors, in the linear region, decrease when the temperature increa

Fig. 14 shows the same characteristic curves evaluated Vg = 14

= 75 °Cpercentage error in the linear region are explainable oserving that in thetance is small and the channel resistance is high, copared to the model, thus making the MOSFET channel a more significant contr


The energy switching losses of the SiC device during the turncording to Eqs. (18) and (19). The model was simulated under the conditions

A and s. 15.Through them, it is possible to obtain both the rise

time triseobtained by simulation using the proposed model present a good agreement with the mshown in Table II.

The energy switching losses are evaluated for

[25], [125] ment between computed and manufacturer data can be observed.

oncettina Buccella

International Review of Electrical Engineering, Vol. 9, N. 4

consists of a generator which, according to the input vaues, impose respectively the correct output voltage and

t to the generators, through the Eqs. (8) and (11) written inside the Matlab Function box.

III.4.



The validity intervals of the model for [20]


= 18 V C, respectively. In order to point out the difference

between simulated and experimental curves obtained at low values of drain

ercentage errors 11, 12 and 13. It is possible to denote that the errors, in the linear region, decrease when the temperature increa

Fig. 14 shows the same characteristic curves evaluated = 14 C, T

percentage error in the linear region are explainable oserving that in thetance is small and the channel resistance is high, co

o the model, thus making the MOSFET channel a more significant contr


The energy switching losses of the SiC device during the turn-on and the turncording to Eqs. (18) and (19). The model was simulated under the conditions

nd R. 15.

Through them, it is possible to obtain both the rise rise and the fall time

obtained by simulation using the proposed model present a good agreement with the mshown in Table II.

The energy switching losses are evaluated for 125]

ment between computed and manufacturer data can be observed.

oncettina Buccella, Carlo Cecati




III.4.



The validity intervals of the model for 20] V


V , evaluated at , respectively. In order to point out the difference



Fig. 14 shows the same characteristic curves evaluated = 14 V

T =100 percentage error in the linear region are explainable oserving that in thetance is small and the channel resistance is high, co



IV.The energy switching losses of the SiC device during

on and the turncording to Eqs. (18) and (19). The model was simulated under the conditions

Rg = 6

Through them, it is possible to obtain both the rise and the fall time


The energy switching losses are evaluated for 125] °C

ment between computed and manufacturer data can be

, Carlo Cecati




Validation of the



The validity intervals of the model for V and


, evaluated at , respectively. In order to point out the difference



Fig. 14 shows the same characteristic curves evaluated V, parameterized=100

percentage error in the linear region are explainable oserving that in thetance is small and the channel resistance is high, co



IV. The energy switching losses of the SiC device during


= 6,8 Ω



SIC

Data sourceSimulation

Manufacturer

The energy switching losses are evaluated for C and are shown in Fig. 1


, Carlo Cecati




Validation of the



The validity intervals of the model for and [25

and 10 show the Idtrized for applied voltage gate


between simulated and experimental curves obtained at low values of drain-source voltage, the drain current rel


Fig. 14 shows the same characteristic curves evaluated , parameterized

=100 °C percentage error in the linear region are explainable oserving that in the SiC MOSFET the epitaxial layer resitance is small and the channel resistance is high, co



Losses CalculationsThe energy switching losses of the SiC device during


8 Ω



MOSFETData sourceSimulation

Manufacturer

The energy switching losses are evaluated for and are shown in Fig. 1


, Carlo Cecati




Validation of the


curves obtained by the manufacturer [16].

The validity intervals of the model for [25] –

d - Vtrized for applied voltage gate


between simulated and experimental curves obtained at source voltage, the drain current rel

ercentage errors er 11, 12 and 13. It is possible to denote that the errors, in the linear region, decrease when the temperature increa


C and percentage error in the linear region are explainable o

SiC MOSFET the epitaxial layer resitance is small and the channel resistance is high, co

o the model, thus making the MOSFET channel a more significant contributor to the on



on and the turncording to Eqs. (18) and (19). The model was simulated under the conditions Vds

8 Ω. The transient curves are shown in


obtained by simulation using the proposed model present a good agreement with the m

MOSFETData sourceSimulation

Manufacturer



, Carlo Cecati




Validation of the


simulations with those

The validity intervals of the model for – [125] Vds

trized for applied voltage gate , evaluated at T

, respectively. In order to point out the difference between simulated and experimental curves obtained at

source voltage, the drain current relr are evaluated and shown in Figs

11, 12 and 13. It is possible to denote that the errors, in the linear region, decrease when the temperature increa


and T percentage error in the linear region are explainable o


o the model, thus making the MOSFET channel a ibutor to the on



on and the turn-off transients are computed, acording to Eqs. (18) and (19). The model was simulated

Vds,off. The transient curves are shown in



TABLEMOSFET RISE

Data source Simulation

Manufacturer






Validation of the



The validity intervals of the model for 125] characteristic

trized for applied voltage gate T = 25


source voltage, the drain current relare evaluated and shown in Figs


Fig. 14 shows the same characteristic curves evaluated , parameterized for

T = 125 percentage error in the linear region are explainable o





off transients are computed, acording to Eqs. (18) and (19). The model was simulated

off = 800 . The transient curves are shown in

Through them, it is possible to obtain both the rise and the fall time tfall


TABLE

ISE A






Validation of the Proposed Model



The validity intervals of the model for 125] °C, respec

characteristictrized for applied voltage gate Vg = 10

= 25 °, respectively. In order to point out the difference


are evaluated and shown in Figs11, 12 and 13. It is possible to denote that the errors, in the linear region, decrease when the temperature increa

Fig. 14 shows the same characteristic curves evaluated for T

= 125 percentage error in the linear region are explainable o






= 800 . The transient curves are shown in

Through them, it is possible to obtain both the rise of the device. The va


TABLE II AND

trise






Proposed Model

The proposed Simulink/Matlab® model of the 4HMOSFET was validated comparing the


The validity intervals of the model for , respec

characteristic= 10 °C; T




Fig. 14 shows the same characteristic curves evaluated T = 25

= 125 °C.percentage error in the linear region are explainable o






= 800 V, . The transient curves are shown in


obtained by simulation using the proposed model present a good agreement with the manufacturer values, as

ND FALL

rise(ns)12,313,6






Proposed Model

model of the 4HMOSFET was validated comparing the I


The validity intervals of the model for , respec

characteristic= 10 V C; T = 75




Fig. 14 shows the same characteristic curves evaluated = 25

. The high values of percentage error in the linear region are explainable o


o the model, thus making the MOSFET channel a ibutor to the on-state voltage.




, Vg. The transient curves are shown in


obtained by simulation using the proposed model present anufacturer values, as

ALL TIMES(ns)

12,3 13,6

The energy switching losses are evaluated for and are shown in Fig. 16. A good agre




t to the generators, through the Eqs. (8) and (11)

Proposed Model

model of the 4HId-Vds


The validity intervals of the model for V, respectively. Fig

characteristic curves paramV , V= 75




Fig. 14 shows the same characteristic curves evaluated = 25 °C, T

The high values of percentage error in the linear region are explainable o


o the model, thus making the MOSFET channel a state voltage.

This is due to the low channel surface mobility of SiC. This results in the gradual transition from the linear rgion to the saturation region of the SiC curves.



g = 20 . The transient curves are shown in



IMES tfall(ns)35,435,6

The energy switching losses are evaluated for 6. A good agre





Proposed Model

model of the 4HVds characteri


Vgs tively. Figcurves paramVg = 14

= 75 °C , respectively. In order to point out the difference


are evaluated and shown in Figs11, 12 and 13. It is possible to denote that the errors, in the linear region, decrease when the temperature increa

Fig. 14 shows the same characteristic curves evaluated C, T = 50




This is due to the low channel surface mobility of SiC. This results in the gradual transition from the linear r

rves.

Losses Calculations The energy switching losses of the SiC device during


= 20 . The transient curves are shown in



(ns)

35,4 35,6

The energy switching losses are evaluated for 6. A good agre





Proposed Model

model of the 4Hcharacteri

simulations with those given by

and tively. Figcurves param

= 14 C and




Fig. 14 shows the same characteristic curves evaluated = 50





The energy switching losses of the SiC device during off transients are computed, a

cording to Eqs. (18) and (19). The model was simulated = 20 V,

. The transient curves are shown in



The energy switching losses are evaluated for T inside 6. A good agre





model of the 4H-SiC characteri

given by

and T tively. Figs. 8, 9 curves param

= 14 V and and T




Fig. 14 shows the same characteristic curves evaluated = 50 °C





The energy switching losses of the SiC device during off transients are computed, a

cording to Eqs. (18) and (19). The model was simulated , Iload


Through them, it is possible to obtain both the rise of the device. The val


T inside 6. A good agre



consists of a generator which, according to the input val-ues, impose respectively the correct output voltage and


SiC characteris-

given by

T are 8, 9

curves parame-and T =


source voltage, the drain current rela-are evaluated and shown in Figs.

11, 12 and 13. It is possible to denote that the errors, in the linear region, decrease when the temperature increas-

Fig. 14 shows the same characteristic curves evaluated C ,T

The high values of percentage error in the linear region are explainable ob-

SiC MOSFET the epitaxial layer resis-tance is small and the channel resistance is high, com-

o the model, thus making the MOSFET channel a

This is due to the low channel surface mobility of SiC. This results in the gradual transition from the linear re-

The energy switching losses of the SiC device during off transients are computed, ac-

cording to Eqs. (18) and (19). The model was simulated load =


Through them, it is possible to obtain both the rise lues


T inside 6. A good agree-



l-ues, impose respectively the correct output voltage and


SiC s-

given by

are 8, 9

e-and

= , respectively. In order to point out the difference

between simulated and experimental curves obtained at a-

. 11, 12 and 13. It is possible to denote that the errors, in

s-

Fig. 14 shows the same characteristic curves evaluated T

The high values of b-s-

m-o the model, thus making the MOSFET channel a

This is due to the low channel surface mobility of SiC. e-

The energy switching losses of the SiC device during c-

cording to Eqs. (18) and (19). The model was simulated =


Through them, it is possible to obtain both the rise ues


T inside e-


Copyright © 2014 Praise Worthy Prize S.r.l. Copyright © 2014 Praise Worthy Prize S.r.l.

Fig. 10.


Fig. 8.

Fig. 9.

Fig. 10.

Fig. 11.


Fig. 8. Id

Fig. 9. Id

Fig. 10. Id

Fig. 11. and expe


d-Vds

d-Vds

d-Vds

Fig. 11. Relative percentage error between the simulatedand expe


ds characteristic

ds characteristic

ds characteristic

Relative percentage error between the simulatedand expe


characteristic

characteristic

characteristic

Relative percentage error between the simulatedand experimental curves shown in Fig. 8


characteristic

characteristic

characteristic

Relative percentage error between the simulatedrimental curves shown in Fig. 8


characteristic curves evaluated at

characteristic curves evaluated at

characteristic curves evaluated

Relative percentage error between the simulated

rimental curves shown in Fig. 8

Paolo Giammatteo


curves evaluated at

curves evaluated at

curves evaluated


rimental curves shown in Fig. 8

Paolo Giammatteo


curves evaluated at

curves evaluated at

curves evaluated


Paolo Giammatteo


curves evaluated at

curves evaluated at

curves evaluated


Paolo Giammatteo

All rights reserved

curves evaluated at

curves evaluated at

curves evaluated at


Paolo Giammatteo

All rights reserved

curves evaluated at T = 25

curves evaluated at T = 75

at T = 125


Paolo Giammatteo

All rights reserved

= 25 °

= 75 °

= 125


Paolo Giammatteo, C

All rights reserved

°C

°C

= 125 °C



All rights reserved

oncettina Buccella

All rights reserved

677

oncettina Buccella

All rights reserved

677

lab/Simulinkcomplex devices, in Fig. 17 has been considered.lation results are obtained at two different temperature: TkV AL monic elimination algorithm, for modulation index 0.8on load, evaluated at 20, respectively.

oncettina Buccella

All rights reserved

In order to show the versatility of the Malab/Simulinkcomplex devices, in Fig. 17 has been considered.lation results are obtained at two different temperature: T1 = 50kV AL = 0monic elimination algorithm, for modulation index 0.8, is shown in Fig. 18 [28]. Output voltage and current on load, evaluated at 20, respectively.

oncettina Buccella

Fig. 12.

Fig. 13.

Fig

In order to show the versatility of the Malab/Simulinkcomplex devices, in Fig. 17 has been considered.lation results are obtained at two different temperature:

= 50kV A, V

= 0.2 monic elimination algorithm, for modulation index

, is shown in Fig. 18 [28]. Output voltage and current on load, evaluated at 20, respectively.

oncettina Buccella


Fig. 12.

Fig. 13.

Fig. 14.

In order to show the versatility of the Malab/Simulinkcomplex devices, in Fig. 17 has been considered.lation results are obtained at two different temperature:

= 50°C and Vdc 2 H.

monic elimination algorithm, for modulation index , is shown in Fig. 18 [28]. Output voltage and current

on load, evaluated at 20, respectively.



Fig. 12. Relative percentage error between the simulatedand experimental curves shown in Fig. 9

Fig. 13. Relative percentage error beand experimental curves shown in Fig. 10

. 14. Id-

V.In order to show the versatility of the Ma

lab/Simulink®

complex devices, in Fig. 17 has been considered.lation results are obtained at two different temperature:

°C and = 600

H. The pulse pattern, obtained by using the hamonic elimination algorithm, for modulation index

, is shown in Fig. 18 [28]. Output voltage and current on load, evaluated at 20, respectively.

, Carlo Cecati



Relative percentage error beand experimental curves shown in Fig. 10

-Vds characteristic curves evaluated for

V. In order to show the versatility of the Ma

® SiC MOSFET model to compose more complex devices, in Fig. 17 has been considered.lation results are obtained at two different temperature:

°C and T= 600 The pulse pattern, obtained by using the ha


on load, evaluated at 20, respectively.

, Carlo Cecati




characteristic curves evaluated for

Application ExampleIn order to show the versatility of the Ma

SiC MOSFET model to compose more complex devices, the five level cascaded inverter shown in Fig. 17 has been considered.lation results are obtained at two different temperature:

T2 = 100= 600 V and a RThe pulse pattern, obtained by using the ha


on load, evaluated at

, Carlo Cecati






SiC MOSFET model to compose more the five level cascaded inverter shown

in Fig. 17 has been considered.lation results are obtained at two different temperature:

= 100and a R

The pulse pattern, obtained by using the hamonic elimination algorithm, for modulation index

, is shown in Fig. 18 [28]. Output voltage and current on load, evaluated at T = 50

, Carlo Cecati








= 100°C, for rated power equal to and a R


, is shown in Fig. 18 [28]. Output voltage and current = 50



Relative percentage error be

and experimental curves shown in Fig. 10





°C, for rated power equal to and a R-L load having


, is shown in Fig. 18 [28]. Output voltage and current = 50°C, are shown in Figs. 19 and







in Fig. 17 has been considered. For this device the simlation results are obtained at two different temperature:

°C, for rated power equal to L load having


, is shown in Fig. 18 [28]. Output voltage and current °C, are shown in Figs. 19 and







For this device the simlation results are obtained at two different temperature:






tween the simulatedand experimental curves shown in Fig. 10















°C, for rated power equal to L load having R






characteristic curves evaluated for Vg =14

Application Example In order to show the versatility of the Ma



°C, for rated power equal to R = 102Ω





tween the simulated

=14

In order to show the versatility of the MaSiC MOSFET model to compose more

the five level cascaded inverter shown For this device the sim

lation results are obtained at two different temperature: °C, for rated power equal to

= 102Ω The pulse pattern, obtained by using the ha


°C, are shown in Figs. 19 and



tween the simulated

=14 V

In order to show the versatility of the MaSiC MOSFET model to compose more

the five level cascaded inverter shown For this device the sim

lation results are obtained at two different temperature: °C, for rated power equal to

= 102Ω and The pulse pattern, obtained by using the ha

monic elimination algorithm, for modulation index m, is shown in Fig. 18 [28]. Output voltage and current



In order to show the versatility of the Mat-SiC MOSFET model to compose more

the five level cascaded inverter shown For this device the simu-

lation results are obtained at two different temperature: °C, for rated power equal to 12

and The pulse pattern, obtained by using the har-

m1 = , is shown in Fig. 18 [28]. Output voltage and current



t-SiC MOSFET model to compose more

the five level cascaded inverter shown u-

lation results are obtained at two different temperature: 12

and r-=



Fig.


Fig. 16


16. SiC MOSFET switching losses: computed data (dashed line)


SiC MOSFET switching losses: computed data (dashed line)


Figs. 15.

SiC MOSFET switching losses: computed data (dashed line) and manu

Fig


s. 15.

SiC MOSFET switching losses: computed data (dashed line) and manu

Fig. 17


(a) T

(b) Turn

s. 15. SiC MOSFET transient curves

SiC MOSFET switching losses: computed data (dashed line) and manufacturer data (continuous line)

17. Five level cascaded inverter


(a) Turn

(b) Turn

SiC MOSFET transient curves

SiC MOSFET switching losses: computed data (dashed line) facturer data (continuous line)

Five level cascaded inverter


urn-on curves

(b) Turn-off curves.



facturer data (continuous line)


Paolo Giammatteo


on curves

off curves.



facturer data (continuous line)


Paolo Giammatteo


on curves

off curves.




Paolo Giammatteo


on curves

off curves.




Paolo Giammatteo

All rights reserved




Paolo Giammatteo

All rights reserved




Paolo Giammatteo

All rights reserved


Paolo Giammatteo, C

All rights reserved



All rights reserved


oncettina Buccella

All rights reserved

678


oncettina Buccella

All rights reserved

678

posed model is the only available for simulation of coplex control algorithms on sophisticated power converter topologies.as

FET incorporating the equations (5) to (15b), has been proposed and fully implemenblock with five input pins and two output pins. The prposed model is capable to estimate the switching losses.

oncettina Buccella

All rights reserved

It is worth noting, in the authors’ knowledge, the prposed model is the only available for simulation of coplex control algorithms on sophisticated power converter topologies.algorithm, cannot be practically simsimulators like Spice.

A detailed Matlab/SimulinkFET incorporating the equations (5) to (15b), has been proposed and fully implemenblock with five input pins and two output pins. The prposed model is capable to estimate the switching losses.

It has been validated by comparing the obtained

oncettina Buccella

It is worth noting, in the authors’ knowledge, the prposed model is the only available for simulation of coplex control algorithms on sophisticated power converter topologies.

gorithm, cannot be practically simmulators like Spice.



oncettina Buccella


It is worth noting, in the authors’ knowledge, the prposed model is the only available for simulation of coplex control algorithms on sophisticated power converter topologies.






It is worth noting, in the authors’ knowledge, the prposed model is the only available for simulation of coplex control algorithms on sophisticated power converter topologies. The same syst




, Carlo Cecati


Fig.

It is worth noting, in the authors’ knowledge, the prposed model is the only available for simulation of coplex control algorithms on sophisticated power converter

The same systgorithm, cannot be practically simmulators like Spice.



, Carlo Cecati


Fig.

Fig. 19

Fig.



VI.A detailed Matlab/Simulink



, Carlo Cecati


Fig.

19. Inverter output v

Fig.



VI. A detailed Matlab/Simulink



, Carlo Cecati


18. Pulse pattern

Inverter output v

20. Load current


The same system, together with the control gorithm, cannot be practically sim

ConclusionA detailed Matlab/Simulink




Pulse pattern

Inverter output v

. Load current

It is worth noting, in the authors’ knowledge, the pr

posed model is the only available for simulation of coplex control algorithms on sophisticated power converter

em, together with the control gorithm, cannot be practically sim

ConclusionA detailed Matlab/Simulink

FET incorporating the equations (5) to (15b), has been proposed and fully implemented in a Simulinkblock with five input pins and two output pins. The prposed model is capable to estimate the switching losses.



Pulse pattern

Inverter output v

. Load current


em, together with the control gorithm, cannot be practically sim

ConclusionA detailed Matlab/Simulink® model of 4H

FET incorporating the equations (5) to (15b), has been ted in a Simulink

block with five input pins and two output pins. The prposed model is capable to estimate the switching losses.



Pulse pattern

Inverter output voltage

. Load current


em, together with the control gorithm, cannot be practically simu

Conclusionmodel of 4H





Pulse pattern

oltage

. Load current


em, together with the control ulated using circuital

Conclusion model of 4H





oltage


em, together with the control lated using circuital

model of 4H







model of 4H-SiC MOFET incorporating the equations (5) to (15b), has been

ted in a Simulinkblock with five input pins and two output pins. The prposed model is capable to estimate the switching losses.





SiC MOFET incorporating the equations (5) to (15b), has been

ted in a Simulink® block with five input pins and two output pins. The prposed model is capable to estimate the switching losses.





SiC MOFET incorporating the equations (5) to (15b), has been

library block with five input pins and two output pins. The prposed model is capable to estimate the switching losses.

It has been validated by comparing the obtained Id-


It is worth noting, in the authors’ knowledge, the pro-posed model is the only available for simulation of com-plex control algorithms on sophisticated power converter


SiC MOS-FET incorporating the equations (5) to (15b), has been

library block with five input pins and two output pins. The pro-posed model is capable to estimate the switching losses.

-Vds


o-m-

plex control algorithms on sophisticated power converter em, together with the control

lated using circuital

S-FET incorporating the equations (5) to (15b), has been

library o- ds


characteristics with those given by the manufacturer for a widely diffused device (Cree CMF20120D).

turation region is successfully simulated. The block is very useful to verify complex converters topologies bhavior. At this end, a been selected and some significant simulation results have been shown. An important limit of this approach is the computational speed of the simulation, which could be very high for big systems (up to ten SiC devices).

[1]

[2]

[3]

[4]

[5]

[6]

[7]

[8]

[9]

[10]

[11]

[12]

[13]

[14]

[15]


characteristics with those given by the manufacturer for a dely diffused device (Cree CMF20120D).The linear region is still underestimated, while the s


X. Yu, C. Cecatof (Issue

G. Spagnuolo, G. Petrone, S.V. Araujo, C. Cecati, E. FriisMadsen, P. Energy Discussions IEEE Industrial March 2010

Janjamraj, N., Oonsivilai, A., Review of multilevel converters/inverters, (2013) Engineering (IREE),

U. K. Mishra, AlGaN/GaN transistors for pInternational Electron Devices Meeting (IEDM)13.2.4, December 2010

J. Rabkowski, D. Peftitsis and H. P. Nee, Silicon Carbide Power Transistors Industrial Ele2012

P. G. Neudeck, 5.1

A. H. Mantooth, M.D. Glover and P. Shepherd, Wide Bandgap Technologies and Their Implications on MiniaturizinElectronic Systems, Power Electronics, pp. 1, March 2014

P. Ning, D. Zhang, R. Lai, D. Jiang, F. Wang, D. Boroyevich, R. Burgos, K. Karimi, V.D. Immanuel and E.V. Solodovnik, HighTemperature HardVol. 7 (

N. Yang, Carbide Power DevicesEng.,Virginia Polytechnic Institute and State UnivUS,2010.

[10] B. Wrzecionko, J. Biela, J.W. Kolar, SiC Power Semiconductors in HEVs: Influence of Junction Temperature on Power Density, Chip Utilization and Efficiency, Annual Porto, PT,

[11] H. Zhang and L. Tolbert, Efficiency Impact of Silicon Carbide Power Electronics for Modern Wind Turbine Full Scale Frequency Electronics, Vol. 58

[12] R. Lai, F. Wang, P. Ning, D. Zhang, D. Jiang, R. Burgos, D. Boroyevich, K. J. Karimi and V. D. Immanuel, A HighDensity Converter, (Issue 4

[13] T. Mantooth and A. K. Agarwal, Modeling, Simulation, and Validation Electronics, Vol.

[14] Z. Zhang, F. Wang, LDriver for Crosstalk Suppression of SiC Devices in a PhaseConfiguration, (Issue 4

[15] N. Ericson, S. Frank, C. Britton, L. MarlinoGrider, A. Mantooth, M.Francis, R. Lamichhane, M. Mudholkar, P.




X. Yu, C. Cecatof Smart Grids , Issue

G. Spagnuolo, G. Petrone, S.V. Araujo, C. Cecati, E. FriisMadsen, P. Rodriguez, R. Teodorescu and P. Zacharias, Renewable Energy Discussions IEEE Industrial March 2010Janjamraj, N., Oonsivilai, A., Review of multilevel converters/inverters, (2013) Engineering (IREE), U. K. Mishra, AlGaN/GaN transistors for pInternational Electron Devices Meeting (IEDM)13.2.4, December 2010J. Rabkowski, D. Peftitsis and H. P. Nee, Silicon Carbide Power Transistors Industrial Ele2012.

P. G. Neudeck, 5.1 - 5.34).A. H. Mantooth, M.D. Glover and P. Shepherd, Wide Bandgap Technologies and Their Implications on MiniaturizinElectronic Systems, Power Electronics, pp. 1, March 2014P. Ning, D. Zhang, R. Lai, D. Jiang, F. Wang, D. Boroyevich, R. Burgos, K. Karimi, V.D. Immanuel and E.V. Solodovnik, HighTemperature HardVol. 7 (N. Yang, Carbide Power DevicesEng.,Virginia Polytechnic Institute and State UnivUS,2010.B. Wrzecionko, J. Biela, J.W. Kolar, SiC Power Semiconductors in HEVs: Influence of Junction Temperature on Power Density, Chip Utilization and Efficiency, Annual Porto, PT, H. Zhang and L. Tolbert, Efficiency Impact of Silicon Carbide Power Electronics for Modern Wind Turbine Full Scale Frequency Electronics, Vol. 58 R. Lai, F. Wang, P. Ning, D. Zhang, D. Jiang, R. Burgos, D. Boroyevich, K. J. Karimi and V. D. Immanuel, A HighDensity Converter, Issue 4

T. Gachovska, , J. L. Hudgins, A. Bryant, E. Santi, H. A. Mantooth and A. K. Agarwal, Modeling, Simulation, and Validation Electronics, Vol. Z. Zhang, F. Wang, LDriver for Crosstalk Suppression of SiC Devices in a PhaseConfiguration, Issue 4

N. Ericson, S. Frank, C. Britton, L. MarlinoGrider, A. Mantooth, M.Francis, R. Lamichhane, M. Mudholkar, P. Shepherd, M. Glover, J. Valle




X. Yu, C. CecatSmart Grids ,

Issue 3): 49 G. Spagnuolo, G. Petrone, S.V. Araujo, C. Cecati, E. FriisMadsen, E. Gubia, D. Hissel, M. Jasinski, W. Knapp, M. Liserre,

Rodriguez, R. Teodorescu and P. Zacharias, Renewable Energy Operation and Conversion Schemes: A Summary of Discussions IEEE Industrial March 2010Janjamraj, N., Oonsivilai, A., Review of multilevel converters/inverters, (2013) Engineering (IREE), U. K. Mishra, AlGaN/GaN transistors for pInternational Electron Devices Meeting (IEDM)13.2.4, December 2010J. Rabkowski, D. Peftitsis and H. P. Nee, Silicon Carbide Power Transistors Industrial Ele

P. G. Neudeck,

5.34).A. H. Mantooth, M.D. Glover and P. Shepherd, Wide Bandgap Technologies and Their Implications on MiniaturizinElectronic Systems, Power Electronics, pp. 1, March 2014P. Ning, D. Zhang, R. Lai, D. Jiang, F. Wang, D. Boroyevich, R. Burgos, K. Karimi, V.D. Immanuel and E.V. Solodovnik, HighTemperature HardVol. 7 (Issue 1N. Yang, Characterization and Modeling of Silicon and Carbide Power DevicesEng.,Virginia Polytechnic Institute and State UnivUS,2010. B. Wrzecionko, J. Biela, J.W. Kolar, SiC Power Semiconductors in HEVs: Influence of Junction Temperature on Power Density, Chip Utilization and Efficiency, Annual Conference of IEEE (IECON ’09Porto, PT, H. Zhang and L. Tolbert, Efficiency Impact of Silicon Carbide Power Electronics for Modern Wind Turbine Full Scale Frequency Electronics, Vol. 58 R. Lai, F. Wang, P. Ning, D. Zhang, D. Jiang, R. Burgos, D. Boroyevich, K. J. Karimi and V. D. Immanuel, A HighDensity Converter, Issue 4): pp. 4

Gachovska, , J. L. Hudgins, A. Bryant, E. Santi, H. A. Mantooth and A. K. Agarwal, Modeling, Simulation, and Validation Electronics, Vol. Z. Zhang, F. Wang, LDriver for Crosstalk Suppression of SiC Devices in a PhaseConfiguration, Issue 4): 1986

N. Ericson, S. Frank, C. Britton, L. MarlinoGrider, A. Mantooth, M.Francis, R. Lamichhane, M. Mudholkar,

Shepherd, M. Glover, J. Valle




X. Yu, C. CecatSmart Grids ,

): 49 -G. Spagnuolo, G. Petrone, S.V. Araujo, C. Cecati, E. Friis

E. Gubia, D. Hissel, M. Jasinski, W. Knapp, M. Liserre, Rodriguez, R. Teodorescu and P. Zacharias, Renewable

Operation and Conversion Schemes: A Summary of Discussions During the Seminar on Renewable Energy Systems,IEEE Industrial March 2010. Janjamraj, N., Oonsivilai, A., Review of multilevel converters/inverters, (2013) Engineering (IREE), U. K. Mishra, AlGaN/GaN transistors for pInternational Electron Devices Meeting (IEDM)13.2.4, December 2010J. Rabkowski, D. Peftitsis and H. P. Nee, Silicon Carbide Power Transistors - A New Era in Power Electronics is Initiated, Industrial Electronics Magazine, Vol. 6 (

P. G. Neudeck, 5.34).

A. H. Mantooth, M.D. Glover and P. Shepherd, Wide Bandgap Technologies and Their Implications on MiniaturizinElectronic Systems, Power Electronics, pp. 1, March 2014P. Ning, D. Zhang, R. Lai, D. Jiang, F. Wang, D. Boroyevich, R. Burgos, K. Karimi, V.D. Immanuel and E.V. Solodovnik, HighTemperature Hard

Issue 1): 6 Characterization and Modeling of Silicon and

Carbide Power DevicesEng.,Virginia Polytechnic Institute and State Univ

B. Wrzecionko, J. Biela, J.W. Kolar, SiC Power Semiconductors in HEVs: Influence of Junction Temperature on Power Density, Chip Utilization and Efficiency,

Conference of IEEE (IECON ’09Porto, PT, November 2009H. Zhang and L. Tolbert, Efficiency Impact of Silicon Carbide Power Electronics for Modern Wind Turbine Full Scale Frequency Electronics, Vol. 58 R. Lai, F. Wang, P. Ning, D. Zhang, D. Jiang, R. Burgos, D. Boroyevich, K. J. Karimi and V. D. Immanuel, A HighDensity Converter,

): pp. 4 Gachovska, , J. L. Hudgins, A. Bryant, E. Santi, H. A.

Mantooth and A. K. Agarwal, Modeling, Simulation, and Validation of a Power SiC BJT, Electronics, Vol. Z. Zhang, F. Wang, LDriver for Crosstalk Suppression of SiC Devices in a PhaseConfiguration,

): 1986 N. Ericson, S. Frank, C. Britton, L. MarlinoGrider, A. Mantooth, M.Francis, R. Lamichhane, M. Mudholkar,





X. Yu, C. Cecati, T. Dillon and M. G. Simoes, The new Frontier Smart Grids ,

- 63, September 2011G. Spagnuolo, G. Petrone, S.V. Araujo, C. Cecati, E. Friis

E. Gubia, D. Hissel, M. Jasinski, W. Knapp, M. Liserre, Rodriguez, R. Teodorescu and P. Zacharias, Renewable

Operation and Conversion Schemes: A Summary of During the Seminar on Renewable Energy Systems,

IEEE Industrial Electronic

Janjamraj, N., Oonsivilai, A., Review of multilevel converters/inverters, (2013) Engineering (IREE), U. K. Mishra, AlGaN/GaN transistors for pInternational Electron Devices Meeting (IEDM)13.2.4, December 2010J. Rabkowski, D. Peftitsis and H. P. Nee, Silicon Carbide Power

A New Era in Power Electronics is Initiated, ctronics Magazine, Vol. 6 (

P. G. Neudeck, Silicon carbide technology

A. H. Mantooth, M.D. Glover and P. Shepherd, Wide Bandgap Technologies and Their Implications on MiniaturizinElectronic Systems, Power Electronics, pp. 1, March 2014P. Ning, D. Zhang, R. Lai, D. Jiang, F. Wang, D. Boroyevich, R. Burgos, K. Karimi, V.D. Immanuel and E.V. Solodovnik, HighTemperature Hard

): 6 -Characterization and Modeling of Silicon and



Conference of IEEE (IECON ’09November 2009

H. Zhang and L. Tolbert, Efficiency Impact of Silicon Carbide Power Electronics for Modern Wind Turbine Full Scale

Converter, Electronics, Vol. 58 R. Lai, F. Wang, P. Ning, D. Zhang, D. Jiang, R. Burgos, D. Boroyevich, K. J. Karimi and V. D. Immanuel, A HighDensity Converter,

): pp. 4 - 12, December 2010Gachovska, , J. L. Hudgins, A. Bryant, E. Santi, H. A.

Mantooth and A. K. Agarwal, Modeling, Simulation, and of a Power SiC BJT,

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): 1986 - 1997, April 2014N. Ericson, S. Frank, C. Britton, L. MarlinoGrider, A. Mantooth, M.Francis, R. Lamichhane, M. Mudholkar,




turation region is successfully simulated. The block is very useful to verify complex converters topologies bhavior. At this end, a 5been selected and some significant simulation results have been shown. An important limit of this approach is the computational speed of the simulation, which could be very high for big systems (up to ten SiC devices).

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27 (Issue 10Z. Zhang, F. Wang, LDriver for Crosstalk Suppression of SiC Devices in a Phase

IEEE Transactions on Power Electronics, Vol. 29 1997, April 2014





turation region is successfully simulated. The block is very useful to verify complex converters topologies b

5-level cascaded inverter modbeen selected and some significant simulation results have been shown. An important limit of this approach is the computational speed of the simulation, which could be very high for big systems (up to ten SiC devices).


IEEE Industrial Electronics Magazine, Vol. 5 63, September 2011



During the Seminar on Renewable Energy Systems,Electronic

Janjamraj, N., Oonsivilai, A., Review of multilevel converters/inverters, (2013)

8 (2), pp. 514U. K. Mishra, AlGaN/GaN transistors for pInternational Electron Devices Meeting (IEDM)13.2.4, December 2010. J. Rabkowski, D. Peftitsis and H. P. Nee, Silicon Carbide Power



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Converter, Issue 1

R. Lai, F. Wang, P. Ning, D. Zhang, D. Jiang, R. Burgos, D. Boroyevich, K. J. Karimi and V. D. Immanuel, A High

IEEE Industrial Electronics Magazine, Vol. 4 12, December 2010

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of a Power SiC BJT, Issue 10

Z. Zhang, F. Wang, L.M. Tolbert and B.J. Blalock, Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase

IEEE Transactions on Power Electronics, Vol. 29 1997, April 2014






level cascaded inverter modbeen selected and some significant simulation results have been shown. An important limit of this approach is the computational speed of the simulation, which could be very high for big systems (up to ten SiC devices).


IEEE Industrial Electronics Magazine, Vol. 5 63, September 2011



During the Seminar on Renewable Energy Systems,Electronics Magazine, Vol. 4 (

Janjamraj, N., Oonsivilai, A., Review of multilevel converters/inverters, (2013) International Review of Electrical

8 (2), pp. 514U. K. Mishra, AlGaN/GaN transistors for pInternational Electron Devices Meeting (IEDM)

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IEEE Industrial Electronics Magazine, 17, March 2013

Characterization and Modeling of Silicon and Carbide Power Devices, PhD dissertationEng.,Virginia Polytechnic Institute and State Univ


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Converter, IEEE Transactions on Industrial Issue 1): 21




of a Power SiC BJT, Issue 10): 4338 .M. Tolbert and B.J. Blalock, Active Gate

Driver for Crosstalk Suppression of SiC Devices in a PhaseIEEE Transactions on Power Electronics, Vol. 29

1997, April 2014N. Ericson, S. Frank, C. Britton, L. MarlinoGrider, A. Mantooth, M.Francis, R. Lamichhane, M. Mudholkar,


Paolo Giammatteo






IEEE Industrial Electronics Magazine, Vol. 5 63, September 2011.



During the Seminar on Renewable Energy Systems,s Magazine, Vol. 4 (

Janjamraj, N., Oonsivilai, A., Review of multilevel International Review of Electrical

8 (2), pp. 514-U. K. Mishra, AlGaN/GaN transistors for pInternational Electron Devices Meeting (IEDM)





IEEE Industrial Electronics Magazine, 17, March 2013

Characterization and Modeling of Silicon and , PhD dissertation

Eng.,Virginia Polytechnic Institute and State Univ


Conference of IEEE (IECON ’09


IEEE Transactions on Industrial ): 21 -




of a Power SiC BJT, ): 4338

.M. Tolbert and B.J. Blalock, Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase

IEEE Transactions on Power Electronics, Vol. 29 1997, April 2014.



Paolo Giammatteo





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IEEE Industrial Electronics Magazine, Vol. 5 .





-527.U. K. Mishra, AlGaN/GaN transistors for pInternational Electron Devices Meeting (IEDM)




Journal of Emerging and Selected Topics in Power Electronics, pp. 1, March 2014. P. Ning, D. Zhang, R. Lai, D. Jiang, F. Wang, D. Boroyevich, R. Burgos, K. Karimi, V.D. Immanuel and E.V. Solodovnik, High

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B. Wrzecionko, J. Biela, J.W. Kolar, SiC Power Semiconductors in HEVs: Influence of Junction Temperature on Power Density, Chip Utilization and Efficiency, Industrial Electronics 35

Conference of IEEE (IECON ’09


IEEE Transactions on Industrial 28, January 2011


IEEE Industrial Electronics Magazine, Vol. 4 12, December 2010.


of a Power SiC BJT, IEEE Transactions on Power ): 4338 - 4346, October 2012


IEEE Transactions on Power Electronics, Vol. 29


Shepherd, M. Glover, J. Valle-Mayorga, T. McNutt, A.

Paolo Giammatteo





i, T. Dillon and M. G. Simoes, The new Frontier

IEEE Industrial Electronics Magazine, Vol. 5





527. U. K. Mishra, AlGaN/GaN transistors for power electronics,International Electron Devices Meeting (IEDM)

J. Rabkowski, D. Peftitsis and H. P. Nee, Silicon Carbide Power A New Era in Power Electronics is Initiated, ctronics Magazine, Vol. 6 (Issue 2

Silicon carbide technology, (Boca Raton, 2007, pp.


Journal of Emerging and Selected Topics in

P. Ning, D. Zhang, R. Lai, D. Jiang, F. Wang, D. Boroyevich, R. Burgos, K. Karimi, V.D. Immanuel and E.V. Solodovnik, High

IEEE Industrial Electronics Magazine,



B. Wrzecionko, J. Biela, J.W. Kolar, SiC Power Semiconductors in HEVs: Influence of Junction Temperature on Power Density,

Industrial Electronics 35Conference of IEEE (IECON ’09






IEEE Transactions on Power 4346, October 2012




Mayorga, T. McNutt, A.

Paolo Giammatteo

All rights reserved




i, T. Dillon and M. G. Simoes, The new Frontier IEEE Industrial Electronics Magazine, Vol. 5





ower electronics,International Electron Devices Meeting (IEDM)

J. Rabkowski, D. Peftitsis and H. P. Nee, Silicon Carbide Power A New Era in Power Electronics is Initiated,

Issue 2

, (Boca Raton, 2007, pp.








Industrial Electronics 35Conference of IEEE (IECON ’09), pp. 3834









N. Ericson, S. Frank, C. Britton, L. Marlino, R. SeiGrider, A. Mantooth, M.Francis, R. Lamichhane, M. Mudholkar,


Paolo Giammatteo

All rights reserved

characteristics with those given by the manufacturer for a dely diffused device (Cree CMF20120D). The linear region is still underestimated, while the s






During the Seminar on Renewable Energy Systems,s Magazine, Vol. 4 (Issue 1


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characteristics with those given by the manufacturer for a

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Characterization and Modeling of Silicon and , Dept. Elect.

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The linear region is still underestimated, while the sturation region is successfully simulated. The block is very useful to verify complex converters topologies b

level cascaded inverter model has been selected and some significant simulation results have been shown. An important limit of this approach is the computational speed of the simulation, which could be very high for big systems (up to ten SiC devices).




During the Seminar on Renewable Energy Systems,): 38


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A. H. Mantooth, M.D. Glover and P. Shepherd, Wide Bandgap Technologies and Their Implications on Miniaturizing Power




Characterization and Modeling of Silicon and Silicon , Dept. Elect.

., Blacksburg,


Industrial Electronics 35pp. 3834 –


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IEEE Transactions on Power 4346, October 2012.



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The linear region is still underestimated, while the sa-turation region is successfully simulated. The block is very useful to verify complex converters topologies be-

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P. Ning, D. Zhang, R. Lai, D. Jiang, F. Wang, D. Boroyevich, R. Burgos, K. Karimi, V.D. Immanuel and E.V. Solodovnik, High-


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[16]

[17]

[18]

[19]

[20] S. M. Sze,

[21]

[22]

[23]

[24]

[25]

[26]

[27]

[28]

Department of Information Engineering, Computer Science and Mathematics, University of L'Aquila, 67100, L'Aqui

systems, new power devices.

research interests inclelectromagnetic compatibility, electrostatic processes and ultra

oncettina Buccella

All rights reserved

[16]

[17]

[18]

[19]

[20] S. M. Sze,

[21]

[22]

[23]

[24]

[25]

[26]

[27]

[28]




oncettina Buccella

Barkley, B. 4H Silicon IEEE 542,

1200Vhttp://www. cree. com/products/pdf/CMF20120D. pdf.

K. Sun, J. Wu, Y. Lu, X. Yan and H. Lipei, Improved Medium Voltage SiC MOSFET Within Wide Temperature Range , IEEE Transactions on Power Electronics, Vol. 29 (- 2237, May 2014

R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development for SiC Power MOSFET, Power pp. 1

K. Sheng, Maximum junction temperatures of SiC power devices,IEEE Transactions on Electronic Devices342, February 2009

[20] S. M. Sze, Sons, 1981).

N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps distribution and temperatureanalysis, 6): 6

S. H. Ryu, applications in silicon carbideComp. Eng., Purdue Univ., West Lafayette, US, 1997.

S. PotbMcLean and D. Habersat, A Physical Model of High Temperature 4H-Vol.

K. Chain, J. H. Huang, J. Duster,MOSFET (77Technology, Vol. 12

J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, Characterization, Modeling, and Application of 10kV 55

L. Balogh, Design and application guide for high speed MOSFET gate drive circuits, 1400), Texas Instruments, 2001

B. J. Baliga, (Springer, 2008).

C. Buccella, C.Cecati, M. G. Cimoroni, Harmonics Elimination in 5-Level Converters Operating at Very Low SwiInternational Conference on Industrial Technology (ICIT), pp. 1946




oncettina Buccella


Barkley, B. 4H Silicon IEEE Transactions on Power Electronics, Vol. 29 (542, February 20141200V-http://www. cree. com/products/pdf/CMF20120D. pdf.K. Sun, J. Wu, Y. Lu, X. Yan and H. Lipei, Improved Medium Voltage SiC MOSFET Within Wide Temperature Range , IEEE Transactions on Power Electronics, Vol. 29 (

2237, May 2014R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development for SiC Power MOSFET, Power pp. 1 - 5, K. Sheng, Maximum junction temperatures of SiC power devices,IEEE Transactions on Electronic Devices342, February 2009

[20] S. M. Sze, Sons, 1981).N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps distribution and temperatureanalysis,

): 6 - 12, S. H. Ryu, applications in silicon carbideComp. Eng., Purdue Univ., West Lafayette, US, 1997.S. PotbMcLean and D. Habersat, A Physical Model of High Temperature

-SiC MOSFETs, Vol. 55 (K. Chain, J. H. Huang, J. Duster,MOSFET (77–400K) for Technology, Vol. 12 J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, Characterization, Modeling, and Application of 10kV SiC MOSFET,

(Issue 8L. Balogh, Design and application guide for high speed MOSFET gate drive circuits, 1400), Texas Instruments, 2001B. J. Baliga, (Springer, 2008).C. Buccella, C.Cecati, M. G. Cimoroni, Harmonics Elimination in

Level Converters Operating at Very Low SwiInternational Conference on Industrial Technology (ICIT), pp. 1946 - 1951, Cape Town, SA February 2013






Barkley, B. 4H Silicon

Transactions on Power Electronics, Vol. 29 (February 2014-20A SiC Power MOSFET CMF20120D Datasheet

http://www. cree. com/products/pdf/CMF20120D. pdf.K. Sun, J. Wu, Y. Lu, X. Yan and H. Lipei, Improved Medium Voltage SiC MOSFET Within Wide Temperature Range , IEEE Transactions on Power Electronics, Vol. 29 (

2237, May 2014R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development for SiC Power MOSFET,

Electronics, Drives and Energy Systems (ICPEDS 20125, Bengaluru, IN, December 2012


[20] S. M. Sze, Sons, 1981).N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps distribution and temperatureanalysis, Semiconductor Science

12, January 2006S. H. Ryu, applications in silicon carbideComp. Eng., Purdue Univ., West Lafayette, US, 1997.S. Potbhare, N. Goldsman, A. Lelis, J. M. McGarrity, F. B. McLean and D. Habersat, A Physical Model of High Temperature

SiC MOSFETs, 55 (Issue 8

K. Chain, J. H. Huang, J. Duster,MOSFET

400K) for Technology, Vol. 12 J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, Characterization, Modeling, and Application of 10

SiC MOSFET, Issue 8):, August 2008

L. Balogh, Design and application guide for high speed MOSFET gate drive circuits, 1400), Texas Instruments, 2001B. J. Baliga, (Springer, 2008).C. Buccella, C.Cecati, M. G. Cimoroni, Harmonics Elimination in

Level Converters Operating at Very Low SwiInternational Conference on Industrial Technology (ICIT), pp.

1951, Cape Town, SA February 2013




, Carlo Cecati


Barkley, B. Whitaker, Z. Cole, B. Passmore and A. Lostetter, A 4H Silicon Carbide Gate Buffer for Integrated Power S

Transactions on Power Electronics, Vol. 29 (February 2014

20A SiC Power MOSFET CMF20120D Datasheet http://www. cree. com/products/pdf/CMF20120D. pdf.K. Sun, J. Wu, Y. Lu, X. Yan and H. Lipei, Improved Medium Voltage SiC MOSFET Within Wide Temperature Range , IEEE Transactions on Power Electronics, Vol. 29 (

2237, May 2014R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development for SiC Power MOSFET,

Electronics, Drives and Energy Systems (ICPEDS 2012Bengaluru, IN, December 2012


[20] S. M. Sze, Physics of semiconductor devicesSons, 1981). N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps distribution and temperature

Semiconductor ScienceJanuary 2006

S. H. Ryu, Development of CMOS technology for smart power applications in silicon carbideComp. Eng., Purdue Univ., West Lafayette, US, 1997.

hare, N. Goldsman, A. Lelis, J. M. McGarrity, F. B. McLean and D. Habersat, A Physical Model of High Temperature

SiC MOSFETs, Issue 8

K. Chain, J. H. Huang, J. Duster, electron mobility model of wide temperature range

400K) for Technology, Vol. 12 J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, Characterization, Modeling, and Application of 10

SiC MOSFET, ):, August 2008

L. Balogh, Design and application guide for high speed MOSFET gate drive circuits, 1400), Texas Instruments, 2001B. J. Baliga, Fundamentals of Power Semiconductor Devices, (Springer, 2008).C. Buccella, C.Cecati, M. G. Cimoroni, Harmonics Elimination in



Authors’ informationDepartment of Information Engineering, Computer Science and Mathematics, University of L'Aquila, 67100, L'Aqui



, Carlo Cecati


Whitaker, Z. Cole, B. Passmore and A. Lostetter, A Carbide Gate Buffer for Integrated Power S

Transactions on Power Electronics, Vol. 29 (February 2014


2237, May 2014. R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development for SiC Power MOSFET,


K. Sheng, Maximum junction temperatures of SiC power devices,IEEE Transactions on Electronic Devices342, February 2009.

Physics of semiconductor devices

N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps distribution and temperature

Semiconductor ScienceJanuary 2006Development of CMOS technology for smart power

applications in silicon carbideComp. Eng., Purdue Univ., West Lafayette, US, 1997.


SiC MOSFETs, Issue 8): 2029

K. Chain, J. H. Huang, J. Duster,electron mobility model of wide temperature range

400K) for IC simulation, Technology, Vol. 12 J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, Characterization, Modeling, and Application of 10

SiC MOSFET, IEEE Transactions on Electronic Devices):, August 2008

L. Balogh, Design and application guide for high speed MOSFET gate drive circuits, 1400), Texas Instruments, 2001

Fundamentals of Power Semiconductor Devices, (Springer, 2008). C. Buccella, C.Cecati, M. G. Cimoroni, Harmonics Elimination in




Paolo Giammatteofrom the University of Rome "La Sapienza", Rome, Italy, in physics in 2008. From 2009 to 2012, he was with Eustema S.p.A., then, he joined the University of L'Aquila, where since 2013 he is a PhD Studeresearch interests include smart grids, multiagents systems, power converters, power


Concettina Buccelladegree from the University of L'Aquila,L'Aquila, Italy, and the Ph.D. degree University of Rome "La Sapienza", Rome, Italy, both in electrical engineering. From 1988 to 1989, she was with Italtel S.p.A., then, she joined the University of L'Aquila, where since 2001 she is an Associate Professor. Her

research interests include power converters, power systems, smart grids, electromagnetic compatibility, electrostatic processes and ultra

, Carlo Cecati



Transactions on Power Electronics, Vol. 29 (February 2014.


R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development for SiC Power MOSFET,


K. Sheng, Maximum junction temperatures of SiC power devices,IEEE Transactions on Electronic Devices

. Physics of semiconductor devices


Semiconductor ScienceJanuary 2006Development of CMOS technology for smart power



SiC MOSFETs, IEEE Transactions on Electronic Devices): 2029 -


IC simulation, Technology, Vol. 12 (Issue 4J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, Characterization, Modeling, and Application of 10

IEEE Transactions on Electronic Devices):, August 2008

L. Balogh, Design and application guide for high speed MOSFET gate drive circuits, Proc. Power S1400), Texas Instruments, 2001

Fundamentals of Power Semiconductor Devices,

C. Buccella, C.Cecati, M. G. Cimoroni, Harmonics Elimination in Level Converters Operating at Very Low Swi

International Conference on Industrial Technology (ICIT), pp. 1951, Cape Town, SA February 2013





ude power converters, power systems, smart grids, electromagnetic compatibility, electrostatic processes and ultra

, Carlo Cecati



Transactions on Power Electronics, Vol. 29 (


R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development for SiC Power MOSFET,





Semiconductor ScienceJanuary 2006. Development of CMOS technology for smart power



IEEE Transactions on Electronic Devices- 2040, August 2008


IC simulation, Issue 4

J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, Characterization, Modeling, and Application of 10

IEEE Transactions on Electronic Devices):, August 2008.

L. Balogh, Design and application guide for high speed MOSFET Proc. Power S

1400), Texas Instruments, 2001Fundamentals of Power Semiconductor Devices,











R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development for SiC Power MOSFET, IEEE Internatio




N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps distribution and temperature-

Semiconductor Science

Development of CMOS technology for smart power applications in silicon carbide, PhD dissertation, Dept. Elect. and Comp. Eng., Purdue Univ., West Lafayette, US, 1997.


IEEE Transactions on Electronic Devices2040, August 2008


IC simulation, Issue 4): 355


IEEE Transactions on Electronic Devices

L. Balogh, Design and application guide for high speed MOSFET Proc. Power S

1400), Texas Instruments, 2001. Fundamentals of Power Semiconductor Devices,











R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development IEEE Internatio




N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps -dependent 6H

Semiconductor Science and Technology, Vol. 21 (

Development of CMOS technology for smart power , PhD dissertation, Dept. Elect. and

Comp. Eng., Purdue Univ., West Lafayette, US, 1997.hare, N. Goldsman, A. Lelis, J. M. McGarrity, F. B.

McLean and D. Habersat, A Physical Model of High Temperature IEEE Transactions on Electronic Devices

2040, August 2008K. Chain, J. H. Huang, J. Duster,

electron mobility model of wide temperature range IC simulation, Semiconductor Science and

): 355 - J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, Characterization, Modeling, and Application of 10


L. Balogh, Design and application guide for high speed MOSFET Proc. Power Supply Design Seminar (SEM
















N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps dependent 6H

and Technology, Vol. 21 (




2040, August 2008K. Chain, J. H. Huang, J. Duster, P. K. Ko and C. Hu, A

electron mobility model of wide temperature range Semiconductor Science and 358, 1997



L. Balogh, Design and application guide for high speed MOSFET upply Design Seminar (SEM





Paolo Giammatteo received the Dr. degree from the University of Rome "La Sapienza", Rome, Italy, in physics in 2008. From 2009 to 2012, he was with Eustema S.p.A., then, he joined the University of L'Aquila, where since 2013 he is a PhD Studeresearch interests include smart grids, multiagents systems, power converters, power

Concettina Buccella degree from the University of L'Aquila,L'Aquila, Italy, and the Ph.D. degree University of Rome "La Sapienza", Rome, Italy, both in electrical engineering. From 1988 to 1989, she was with Italtel S.p.A., then, she joined the University of L'Aquila, where since 2001 she is an Associate Professor. Her







Electronics, Drives and Energy Systems (ICPEDS 2012Bengaluru, IN, December 2012.

K. Sheng, Maximum junction temperatures of SiC power devices,IEEE Transactions on Electronic Devices, Vol. 56 (


N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps dependent 6H





2040, August 2008. P. K. Ko and C. Hu, A

electron mobility model of wide temperature range Semiconductor Science and 358, 1997






International Conference on Industrial Technology (ICIT), pp. 1951, Cape Town, SA February 2013.


received the Dr. degree from the University of Rome "La Sapienza", Rome, Italy, in physics in 2008. From 2009 to 2012, he was with Eustema S.p.A., then, he joined the University of L'Aquila, where since 2013 he is a PhD Studeresearch interests include smart grids, multiagents systems, power converters, power

received the Dr. Eng. degree from the University of L'Aquila,L'Aquila, Italy, and the Ph.D. degree University of Rome "La Sapienza", Rome, Italy, both in electrical engineering. From 1988 to 1989, she was with Italtel S.p.A., then, she joined the University of L'Aquila, where since 2001 she is an Associate Professor. Her






R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development IEEE International Conference on

Electronics, Drives and Energy Systems (ICPEDS 2012

K. Sheng, Maximum junction temperatures of SiC power devices,Vol. 56 (

Physics of semiconductor devices, (John Wiley and

N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps dependent 6H-





P. K. Ko and C. Hu, A

electron mobility model of wide temperature range Semiconductor Science and 358, 1997.





C. Buccella, C.Cecati, M. G. Cimoroni, Harmonics Elimination in Level Converters Operating at Very Low Switching Frequency,

International Conference on Industrial Technology (ICIT), pp.

Authors’ information Department of Information Engineering, Computer Science and Mathematics, University of L'Aquila, 67100, L'Aquila, Italy

received the Dr. degree from the University of Rome "La Sapienza", Rome, Italy, in physics in 2008. From 2009 to 2012, he was with Eustema S.p.A., then, he joined the University of L'Aquila, where since 2013 he is a PhD Student. Currently, his research interests include smart grids, multiagents systems, power converters, power





Transactions on Power Electronics, Vol. 29 (Issue 2

20A SiC Power MOSFET CMF20120D Datasheet http://www. cree. com/products/pdf/CMF20120D. pdf.K. Sun, J. Wu, Y. Lu, X. Yan and H. Lipei, Improved Medium Voltage SiC MOSFET Within Wide Temperature Range , IEEE Transactions on Power Electronics, Vol. 29 (Issue 5

R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development nal Conference on


K. Sheng, Maximum junction temperatures of SiC power devices,Vol. 56 (Issue 2

, (John Wiley and

N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps -SiC MOSFET





P. K. Ko and C. Hu, A electron mobility model of wide temperature range

Semiconductor Science and





C. Buccella, C.Cecati, M. G. Cimoroni, Harmonics Elimination in tching Frequency,


Department of Information Engineering, Computer Science and

la, Italy

received the Dr. degree from the University of Rome "La Sapienza", Rome, Italy, in physics in 2008. From 2009 to 2012, he was with Eustema S.p.A., then, he joined the University of L'Aquila, where since

nt. Currently, his research interests include smart grids, multiagents systems, power converters, power





Issue 2

20A SiC Power MOSFET CMF20120D Datasheet http://www. cree. com/products/pdf/CMF20120D. pdf. K. Sun, J. Wu, Y. Lu, X. Yan and H. Lipei, Improved Modelingof Medium Voltage SiC MOSFET Within Wide Temperature Range ,

Issue 5



K. Sheng, Maximum junction temperatures of SiC power devices,Issue 2

, (John Wiley and

N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps SiC MOSFET



Comp. Eng., Purdue Univ., West Lafayette, US, 1997. hare, N. Goldsman, A. Lelis, J. M. McGarrity, F. B.










Department of Information Engineering, Computer Science and la, Italy.



received the Dr. Eng. degree from the University of L'Aquila,L'Aquila, Italy, and the Ph.D. degree from the University of Rome "La Sapienza", Rome, Italy, both in electrical engineering. From 1988 to 1989, she was with Italtel S.p.A., then, she joined the University of L'Aquila, where since 2001 she is an Associate Professor. Her



Whitaker, Z. Cole, B. Passmore and A. Lostetter, A Carbide Gate Buffer for Integrated Power Systems,

Issue 2): 539

20A SiC Power MOSFET CMF20120D Datasheet

Modelingof Medium Voltage SiC MOSFET Within Wide Temperature Range ,

Issue 5): 2229



K. Sheng, Maximum junction temperatures of SiC power devices,Issue 2): 337

, (John Wiley and


and Technology, Vol. 21 (Issue







IEEE Transactions on Electronic Devices,








received the Dr. Eng. degree from the University of L'Aquila,

from the University of Rome "La Sapienza", Rome, Italy, both in electrical engineering. From 1988 to 1989, she was with Italtel S.p.A., then, she joined the University of L'Aquila, where since 2001 she is an Associate Professor. Her



Whitaker, Z. Cole, B. Passmore and A. Lostetter, A ystems,): 539 -



): 2229


Electronics, Drives and Energy Systems (ICPEDS 2012),

K. Sheng, Maximum junction temperatures of SiC power devices,): 337 -

, (John Wiley and


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IEEE Transactions on Electronic Devices,



J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, Characterization, Modeling, and Application of 10-

, Vol.







nt. Currently, his research interests include smart grids, multi-agents systems, power converters, power



ude power converters, power systems, smart grids, electromagnetic compatibility, electrostatic processes and ultra-


Whitaker, Z. Cole, B. Passmore and A. Lostetter, A ystems,

-



): 2229


,

K. Sheng, Maximum junction temperatures of SiC power devices, -

, (John Wiley and


Issue



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J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and -

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https://www.researchgate.net/publication/224115784_SiC_power_semiconductors_in_HEVs_Influence_of_junction_temperature_on_power_density_chip_utilization_and_efficiency?el=1_x_8&enrichId=rgreq-5c1fcabd-3585-4aa3-80e1-c0345b7205b3&enrichSource=Y292ZXJQYWdlOzI3MzEyNjkyMTtBUzoyMDM1ODIyNzMwMDM1MjZAMTQyNTU0OTIwNDQzMw==






wideband signal interferences. She was a corecipient of the 2012 and 2013 IEEE Transactions on Industrial Informatics Best Paper Award. Prof.dealing with industrial electronics and renewable energies.

he was a coHis research and technical interests cover several aspects of power electronics, electrical drives, digital control, distributed generation and smart grids. He was a corecipient of the 2012 and 2013 IEEE Tra2012 IEEE Industrial Electronics Magazine Best Paper Award.Prof. Cecati is the current Editor in Chief of the IEEE Transactions on Industrial Electronics.


wideband signal interferences. She was a corecipient of the 2012 and 2013 IEEE Transactions on Industrial Informatics Best Paper Award. Prof. Buccella is C.E.O. of DigiPower Ltd., an university spindealing with industrial electronics and renewable energies.

he was a coHis research and technical interests cover several aspects of power electronics, electrical drives, digital control, distributed generation and smart grids. He was a corecipient of the 2012 and 2013 IEEE Transactions on Industrial Informatics Best Paper Award and of the 2012 IEEE Industrial Electronics Magazine Best Paper Award.Prof. Cecati is the current Editor in Chief of the IEEE Transactions on Industrial Electronics.


wideband signal interferences. She was a corecipient of the 2012 and 2013 IEEE Transactions on Industrial Informatics Best Paper Award.

Buccella is C.E.O. of DigiPower Ltd., an university spindealing with industrial electronics and renewable energies.

he was a coHis research and technical interests cover several aspects of power electronics, electrical drives, digital control, distributed generation and smart grids. He was a corecipient of the 2012 and 2013 IEEE

nsactions on Industrial Informatics Best Paper Award and of the 2012 IEEE Industrial Electronics Magazine Best Paper Award.Prof. Cecati is the current Editor in Chief of the IEEE Transactions on Industrial Electronics.




he was a co-founder oHis research and technical interests cover several aspects of power electronics, electrical drives, digital control, distributed generation and smart grids. He was a corecipient of the 2012 and 2013 IEEE





founder oHis research and technical interests cover several aspects of power electronics, electrical drives, digital control, distributed generation and smart grids. He was a corecipient of the 2012 and 2013 IEEE





Carlo Cecatielectrotechnical engineering from the University of L'Aquila, L'Aquila, Italy, in 1983.Since then, he has been with the University of L'Aquilaelectrical machines and drives; he is also Chief International Academic Adviser at Harbin Institute of Technology, Harbin, China. In

founder of DigiPower Ltd, where he is technical director. His research and technical interests cover several aspects of power electronics, electrical drives, digital control, distributed generation and smart grids. He was a corecipient of the 2012 and 2013 IEEE





Carlo Cecatielectrotechnical engineering from the University of L'Aquila, L'Aquila, Italy, in 1983.Since then, he has been with the University of L'Aquilaelectrical machines and drives; he is also Chief International Academic Adviser at Harbin Institute of Technology, Harbin, China. In

f DigiPower Ltd, where he is technical director. His research and technical interests cover several aspects of power electronics, electrical drives, digital control, distributed generation and smart grids. He was a corecipient of the 2012 and 2013 IEEE

nsactions on Industrial Informatics Best Paper Award and of the 2012 IEEE Industrial Electronics Magazine Best Paper Award.Prof. Cecati is the current Editor in Chief of the IEEE Transactions on




Carlo Cecatielectrotechnical engineering from the University of L'Aquila, L'Aquila, Italy, in 1983.Since then, he has been with the University of L'Aquila electrical machines and drives; he is also Chief International Academic Adviser at Harbin Institute of Technology, Harbin, China. In






Carlo Cecatielectrotechnical engineering from the University of L'Aquila, L'Aquila, Italy, in 1983.Since then, he has been with the University of

where he is a Professor of converters, electrical machines and drives; he is also Chief International Academic Adviser at Harbin Institute of Technology, Harbin, China. In



Paolo Giammatteo




Carlo Cecati received the Dr. Ing. degree in electrotechnical engineering from the University of L'Aquila, L'Aquila, Italy, in 1983.Since then, he has been with the University of




Paolo Giammatteo




received the Dr. Ing. degree in electrotechnical engineering from the University of L'Aquila, L'Aquila, Italy, in 1983.Since then, he has been with the University of




Paolo Giammatteo








Paolo Giammatteo

All rights reserved







Paolo Giammatteo

All rights reserved







Paolo Giammatteo

All rights reserved







Paolo Giammatteo, C

All rights reserved


Buccella is C.E.O. of DigiPower Ltd., an university spin




nsactions on Industrial Informatics Best Paper Award and of the 2012 IEEE Industrial Electronics Magazine Best Paper Award. Prof. Cecati is the current Editor in Chief of the IEEE Transactions on


All rights reserved


Buccella is C.E.O. of DigiPower Ltd., an university spin-off


where he is a Professor of converters, electrical machines and drives; he is also Chief International Academic Adviser at Harbin Institute of Technology, Harbin, China. In 2007,


nsactions on Industrial Informatics Best Paper Award and of the

Prof. Cecati is the current Editor in Chief of the IEEE Transactions on

oncettina Buccella

All rights reserved

680


off

received the Dr. Ing. degree in electrotechnical engineering from the University of L'Aquila, L'Aquila, Italy, in 1983. Since then, he has been with the University of

where he is a Professor of converters, electrical machines and drives; he is also Chief International Academic Adviser at Harbin

2007, f DigiPower Ltd, where he is technical director.

His research and technical interests cover several aspects of power electronics, electrical drives, digital control, distributed generation and smart grids. He was a corecipient of the 2012 and 2013 IEEE

nsactions on Industrial Informatics Best Paper Award and of the

Prof. Cecati is the current Editor in Chief of the IEEE Transactions on

oncettina Buccella

All rights reserved

680

oncettina Buccella

All rights reserved

oncettina Buccella

oncettina Buccella




, Carlo Cecati


, Carlo Cecati


, Carlo Cecati


, Carlo Cecati

International Review of Electrical Engineering, Vol. 9, N. 4International Review of Electrical Engineering, Vol. 9, N. 4International Review of Electrical Engineering, Vol. 9, N. 4International Review of Electrical Engineering, Vol. 9, N. 4International Review of Electrical Engineering, Vol. 9, N. 4International Review of Electrical Engineering, Vol. 9, N. 4International Review of Electrical Engineering, Vol. 9, N. 4International Review of Electrical Engineering, Vol. 9, N. 4International Review of Electrical Engineering, Vol. 9, N. 4International Review of Electrical Engineering, Vol. 9, N. 4International Review of Electrical Engineering, Vol. 9, N. 4

Documents

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