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Electrothermal Modeling of Power ModulesSemester/Master Thesis (FS 2021)
Fig. 1: a) Electrothermal (ET) modeling using ANSYS, b) a half-bridge power module housing four 1.7 kVSilicon Carbide (SiC) MOSFETs fabricated at the APS Laboratory. Infrared camera measurements of thetemperature distribution across a single SiC MOSFET die showing the highest temperature at the surface ofbond wires.
Introduction
Electrothermal (ET) simulations are used to estimate temperature dependent current distribution within apower semiconductor package which is in turn important for predicting the actual switching and conductionpower losses of power semiconductor devices. ANSYS and COMSOL are state-of-the-art software toolsfrequently used in industry to evaluate multiphysics behaviour of power modules and optimize the design ofexternal interconnections and copper layouts. The aim of this thesis is to: 1) to measure/characterize the heatgenerated in commercial devices under different electrical stresses, and 2) assess the modeling accuracyof available multiphysics tools.Student will gain practical experience in electromagnetic and thermal coupleddesign, which is a key aspect in the realization of modern power semiconductor packages.
Scope of the Thesis
The work can be adjusted towards semester and master thesis project according to the following topics:
• ET modeling of multichip power semiconductor packages using ANSYS, COMSOL and/or the ET tooldeveloped at the APS Laboratory (40 %)
• Thermal characterization of power semiconductor packages in the APS Laboratory (30 %)
• Developing the guidelines for optimized electromagnetic-thermal-mechanical package design for multi-chip power modules (20 %)
• Documentation (10 %)
Contact For more details please contact:
Supervisors: Salvatore Race [email protected] ETL F24.2Dr. Ivana Kovacevic-Badstuebner [email protected] ETL F24.2
Professor: Prof. Dr. U. Grossner [email protected] ETL F 28
