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Electrothermal Modeling of Power Modules

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Electrothermal Modeling of Power Modules Semester/Master Thesis (FS 2021)
Fig. 1: a) Electrothermal (ET) modeling using ANSYS, b) a half-bridge power module housing four 1.7 kV Silicon Carbide (SiC) MOSFETs fabricated at the APS Laboratory. Infrared camera measurements of the temperature distribution across a single SiC MOSFET die showing the highest temperature at the surface of bond wires.
Electrothermal (ET) simulations are used to estimate temperature dependent current distribution within a power semiconductor package which is in turn important for predicting the actual switching and conduction power losses of power semiconductor devices. ANSYS and COMSOL are state-of-the-art software tools frequently used in industry to evaluate multiphysics behaviour of power modules and optimize the design of external interconnections and copper layouts. The aim of this thesis is to: 1) to measure/characterize the heat generated in commercial devices under different electrical stresses, and 2) assess the modeling accuracy of available multiphysics tools.Student will gain practical experience in electromagnetic and thermal coupled design, which is a key aspect in the realization of modern power semiconductor packages.
Scope of the Thesis
The work can be adjusted towards semester and master thesis project according to the following topics:
• ET modeling of multichip power semiconductor packages using ANSYS, COMSOL and/or the ET tool developed at the APS Laboratory (40 %)
• Thermal characterization of power semiconductor packages in the APS Laboratory (30 %)
• Developing the guidelines for optimized electromagnetic-thermal-mechanical package design for multi- chip power modules (20 %)
• Documentation (10 %)
Supervisors: Salvatore Race [email protected] ETL F24.2 Dr. Ivana Kovacevic-Badstuebner [email protected] ETL F24.2
Professor: Prof. Dr. U. Grossner [email protected] ETL F 28