All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: 2SJ438 MANUFACTURER: TOSHIBA REMARK: P Channel Model Body Diode(Model Parameter) / ESD Protection Diode

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MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs

Error(%) Measurement Simulation

-0.100 0.670 0.680 1.493

-0.200 1.150 1.200 4.348

-0.500 1.800 1.890 5.000

-1.000 2.800 2.740 -2.143

-2.000 3.800 3.750 -1.316

-5.000 5.750 5.800 0.870

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V3

0Vdc

V1

0

0

U7

2SJ438

V2

10

V_V1

0V -2V -4V -6V -8V -10V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

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Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

-1.000 -2.550 -2.540 -0.392

-2.000 -2.850 -2.853 0.105

-4.000 -3.300 -3.302 0.061

-6.000 -3.700 -3.653 -1.270

-8.000 -4.000 -3.949 -1.275

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0

U7

2SJ438

V2

0Vdc

VGS

-10Vdc

VDS

0Vdc

V_VDS

0V -0.5V -1.0V

I(V2)

0A

-1.0A

-2.0A

-3.0A

Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=-2.5A, VGS=-10V Measurement Simulation Error (%)

RDS (on) 160.000 m 160.000 m 0.000

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I2

5

0

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n

DbreakD2

V1

48

-

+

W1

ION = 0uAIOFF = 1mAW

U10

2SJ438

Time*1mA

0 8n 16n 24n 32n 40n

-V(W1:4)

0V

4V

8V

12V

16V

20V

Gate Charge Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

VDD=-48V,ID=-5A ,VGS=-10V

Measurement Simulation Error (%)

Qgs 4.500 nC 4.639 nC 3.089

Qgd 6.000 nC 5.810 nC -3.167

Qg 22.000 nC 21.351 nC -2.950

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Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.100 900.000 905.000 0.556

0.200 820.000 822.000 0.244

0.500 650.000 656.000 0.923

1.000 515.000 518.000 0.583

2.000 390.000 393.000 0.769

5.000 260.000 261.000 0.385

10.000 176.000 180.000 2.273

20.000 133.000 132.000 -0.752

50.000 90.000 87.500 -2.778

Simulation

Measurement

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R2

11.8

U7

2SJ438

RG

4.7V1

30Vdc

0

V2TD = 2u

TF = 7nPW = 10uPER = 2000u

V1 = 0

TR = 6n

V2 = 20

L1

30nH

R1

4.7

L2

50nH

Time

1.95us 2.00us 2.05us 2.10us

V(2) V(3)/3

0V

-5V

-10V

-13V

Switching Time Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=-2.5A, VDD=-30V VGS=0/10V

Measurement Simulation Error(%)

ton 45.000 ns 59.126 ns 31.391

VGS

ID

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V1

0

U8

2SJ438V2

0

V3

0Vdc

0

V_V2

0V -2V -4V -6V -8V -10V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

Output Characteristic

Circuit Simulation result

Evaluation circuit

VGS=-2.0V

-2.5V

-3V

-3.5V

-6.0V

-10.0V

-8.0V

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R1

0.01m

V1

0VdcU9

2SJ438

0

V_V1

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V

I(R1)

100mA

1.0A

10A

BODY DIODE SPICE MODEL Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit

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Comparison Graph Circuit Simulation Result

Simulation Result

IDR(A) VDS(V)

Measurement VDS(V)

Simulation %Error

0.100 0.650 0.650 0.000

0.200 0.680 0.682 0.294

0.500 0.730 0.734 0.548

1.000 0.780 0.778 -0.256

2.000 0.830 0.830 0.000

5.000 0.930 0.929 -0.108

10.000 1.050 1.051 0.095

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U102SJ438

R1

50

0

V1

TD = 0

TF = 10nsPW = 1usPER = 100us

V1 = -9.4v

TR = 10ns

V2 = 10.6v

Time

14.6us 14.8us 15.0us 15.2us 15.4us 15.6us

I(R1)

-400mA

0A

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj 44.000 ns 43.672 ns -0.745

trb 72.000 ns 49.633 ns -31.065

trr 116.000 ns 93.305 ns -19.565

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Reverse Recovery Characteristic Reference

Trj=44(ns) Trb=72(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example

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R1

0.01m

Ropen

10G

0U21

Open

V1

0Vdc

Open

0

V_V1

0V -5V -10V -15V -20V -25V -30V -35V -40V -45V

I(R1)

0A

-1mA

-2mA

-3mA

-4mA

-5mA

-6mA

-7mA

-8mA

-9mA

-10mA

ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic

Circuit Simulation Result

Evaluation Circuit

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Zener Voltage Characteristic Reference