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SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional) PART NUMBER: SSM5H08TU MANUFACTURER: TOSHIBA Body Diode (Standard) / ESD Protection Diode Schottky Barrier Diode (Professional)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
MOSFET MODEL
Pspice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Transconductance Characteristic Circuit Simulation Result
Comparison table
ID(A) gfs
Error (%) Measurement Simulation
0.50 2.40 2.39 -0.46
1.00 3.37 3.34 -0.92
2.00 4.70 4.64 -1.19
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V_V1
0V 1.0V 2.0V 3.0V 4.0V
I(V2)
10uA
100uA
1.0mA
10mA
100mA
1.0A
10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
R1
100M EG
V33Vdc
OPEN
OPEN
0
OPEN
V110Vdc
V2
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
0.01 1.13 1.14 0.80
0.02 1.16 1.17 0.69
0.05 1.20 1.21 0.83
0.10 1.26 1.27 0.79
0.20 1.35 1.35 0.00
0.50 1.49 1.50 0.67
1.00 1.67 1.68 0.60
2.00 1.92 1.94 1.04
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
OPEN
R1
100MEG
OPEN
0
U1
SSM5H08TU
VD10Vdc
VG2.5Vdc
0
V1
0Vdc
OPEN
Id-Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=0.756A, VGS=2.5V Measurement Simulation Error (%)
RDS (on) 164.88 m 164.88 m 0.00
( VDS(V), Id(A) )
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Id-Rds(on) Characteristic Reference
ID =
VDS =
VGS =
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=10V,ID=1.5A Measurement Simulation Error (%)
Qgs 0.250 nC 0.252 nC 0.800
Qgd 0.565 nC 0.568 nC 0.531
Qg 3.100 nC 3.100 nC 0.000
open
I21.5Adc
U4SSM5H08TU
Open
D1
DbreakOpen
I1
TD = 0
TF = 10nPW = 600uPER = 1000u
I1 = 0
I2 = 1m
TR = 10n
0
-
+W1
ION = 0uAIOFF = 1mAW
RS
100MEG
V110Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Capacitance Characteristic
Simulation Result
VDS(V) Cbd(pF)
Error(%) Measurement Simulation
0.10 109.00 109.80 0.73
0.20 104.00 104.70 0.67
0.50 94.00 93.62 -0.40
1.00 80.00 80.23 0.29
2.00 63.00 64.13 1.79
5.00 43.00 43.04 0.09
10.00 30.00 30.11 0.37
20.00 20.00 20.25 1.25
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Time
4.97us 4.99us 5.01us 5.03us 5.05us 5.07us
V(2)*4 V(3)
0V
4V
8V
12V
RL
13.35
L2
0
R1
4.7
0
V1
TD = 5u
TF = 7nPW = 5uPER = 100u
V1 = 0
TR = 6n
V2 = 5
U10
SSM5H08TU
2
3L1
0.03uH
R2
4.7
V3
0Vdc
VDD
10
0
OPEN
0
OPEN
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=0.75A, VDD=10V VGS=2.5V
Measurement Simulation Error(%)
ton 15.50 ns 15.57 ns 0.45
VGS
ID
Vg = 0/2.5V
VDD = 10V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=1.8V
2.4V
2.0V
2.2V
R1
100MEG
OPEN
0
V12.5Vdc
OPEN
0
OPEN
V2
0Vdc
V33Vdc
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output Characteristic Reference
VGS=1.8V
2.4V
2V
2.2V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Body Diode Model
Pspice model parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
open
R1
0.01m
Open
0
U5SSM5H08TU
Open
RS
100MEG
0
VD
0Vdc
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Ifwd(A) Vfwd(V)
Measurement Vfwd(V)
Simulation %Error
0.010 0.587 0.591 0.681
0.020 0.605 0.604 -0.165
0.050 0.625 0.623 -0.320
0.100 0.637 0.639 0.314
0.200 0.660 0.659 -0.152
0.500 0.690 0.689 -0.145
1.000 0.710 0.713 0.423
2.000 0.739 0.737 -0.271
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Forward Current Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation circuit
Compare Measurement vs. Simulation
Trr Measurement Simulation Error(%)
Trj+Trb 11.6 ns 11.594 ns -0.05172
Open
R1
50Open
V1
TD = 0
TF = 10nsPW = 1usPER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v RS
100MEG
U5SSM5H08TU
open
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Recovery Characteristic Reference
trj=6.4(ns) trb=5.2(ns) Conditions:Ifwd=Irev=0.2(A),Rl=50
Relation between trj and trb
Measurement
Example
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
OPEN
V1
0Vdc
OPEN
OPEN
U1
SSM5H08TU
0
R2
0.01mR1
100MEG
OPEN
0
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
open
R1
0.01m
RS
100MEG
open
V10Vdc
open 0
0
U1
SSM5H08TU
open
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error Measurement Simulation
0.001 0.130 0.138 6.154
0.002 0.155 0.157 1.290
0.005 0.185 0.182 -1.622
0.011 0.208 0.203 -2.404
0.022 0.231 0.228 -1.299
0.052 0.260 0.257 -1.154
0.104 0.290 0.290 0.000
0.202 0.337 0.336 -0.297
0.499 0.427 0.427 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Forward Current Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Junction Capacitance Characteristic Circuit Simulation Result
Evaluation Circuit
open
V1
TD = 0
TF = 10nsPW = 50usPER = 10us
V1 = 0
TR = 1us
V2 = 10
RS
100MEG
open
open
0
0
open
U1
SSM5H08TU
V2
0Vdc
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Vrev(V)
Cj(pF)
%Error Measurement Simulation
0.010 48.000 47.844 -0.325
0.020 47.000 47.377 0.802
0.050 45.500 45.864 0.800
0.100 43.000 43.573 1.333
0.200 39.000 39.690 1.769
0.500 32.000 32.453 1.416
1.000 25.000 26.085 4.340
2.000 20.000 20.018 0.090
5.000 13.000 13.457 3.515
10.000 9.500 9.841 3.589
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Characteristic Circuit Simulation Result
Evaluation Circuit
open
U1
SSM5H08TU
open
open
0
V1
0Vdcopen
0
RL
0.1m
RS
100MEG
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Vrev(V)
Irev (uA)
%Error Measurement Simulation
6.000 6.650 6.800 2.256
8.000 7.450 7.320 -1.745
10.000 8.300 8.000 -3.614
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Current Characteristic Reference