July 14 - 18, 2014 Marriott Rive Gauche Paris, Franceieee-npss.org/wp-content/uploads/2014/03/2014-NSREC.pdfLES QUARTIERS RIVE gAUCHE / THE LEfT bANk AREAS LEVEL 2 A/V PREVIEW La Sorbonne

NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCE

www.nsrec.com

In Collaboration with the RADECS Association

NSREC 2014

July 14 - 18, 2014 Marriott Rive Gauche

Paris, FranceSponsored by: IEEE/NPSS Radiation Effects Committee

Supported by: 3D Plus • Aeroflex • Atmel • BAE Systems • Boeing • Honeywell • Intersil Corporation • Microsemi • Northrop Grumman • Peregrine Semiconductor Corporation • Southwest Research Institute • Texas Instruments

Conference FacilitiesConference Facilities

LES JARDINS / PARISIAN gARDENS

LEVEL 3

LES QUARTIERS RIVE gAUCHE / THE LEfT bANk AREAS

LEVEL 2

A/V PREVIEW La Sorbonne A-b

LES RIVES DE SEINE / THE bANkS of THE RIVER SEINE

LEVEL 0

SHoRT CoURSE AND TECHNICAL SESSIoNS La Seine A-b-C

INDUSTRIAL EXHIbITSLa Seine foyer, Pont des Arts A-b-C, and Pont de Sully A-b

INDUSTRIAL EXHIbIT LUNCHES (Tuesday, Wednesday and Thursday)foyer Atrium

LES CLUbS DE JAZZ / JAZZ

LEVEL -1

PoSTERS and DATA WoRkSHoP Level -1

bREAkfAST foR HoTEL gUESTS Le Patio

SHoRT CoURSE LUNCH Le Patio and Le Jardin du Luxembourg

AERobICSLe Jardin des Plantes

REgISTRATIoN Le Parc Montsouris A

i

9:00 9:10 9:30 10:00 10:30 11:00

11:30 12:00 12:30 1:00 1:30 2:00 2:30 3:00 3:30 4:00 4:30 5:00 5:30 6:00 6:30

7:00 7:30

[9:00] Short Course Introduction Frédéric SaignéLa Seine (Level 0)[9:10] Part 1 – Comparative Earth and Jovian Space EnvironmentSébastien Bourdarie

[10:55] Part 2 – Dose and Dose Rate Effects in Micro-Electronics: Pushing the Limits to Extreme ConditionsPhilippe Adell and Jérome Boch

[2:30] Part 4 – Facilities and Methods for Radiation TestingFrançoise Bezerra and Vincent Pouget

[4:25] Part 5 – Radiation Effects, Calculation Methods and Radiation Test Challenges in Accelerator Mixed Beam EnvironmentsMarkus Brugger

[9:00] Conference OpeningLa Seine A-B-C

[9:40] Session A – Basic Mechanisms of Radiation Effects

[2:10] Session C –Radiation Effects in Devices and Integrated Circuits

[11:25] Session B – Hardness Assurance

[9:00] Invited Talk –Paris, a Beacon for the World?Olivier ChavarenLa Seine A-B-C

[9:55] Session E –Single Event Effects: Transient Characterization

[3:30] Radiation Effects Data WorkshopJazz (Level -1)

[9:55] Session H –Space and Terrestrial Environments

[7:00 to 12:00] Conference SocialSeine Dinner Cruise

[6:20] End of Short Course

[5:50] Exam (for students requesting CEU credit only)

[5:35] Wrap-up[5:45] End of Sessions

[1:00] Short Course Luncheon – Le Jardin du Luxembourg (Level 3)

[1:00] Lunch in Exhibits – Foyer Atrium

[10:30] Break – La Seine, Foyer Atrium

[11:00] Break – Foyer Atrium

[6:00 to 7:30] Industrial Exhibits Reception – La Seine Foyer

[4:30 to 5:45] Radiation Effects Committee Annual Open Meeting – La Seine A-B-C

[1:45] Poster SessionJazz (Level -1)



— and —

[1:00] IEEE Young Professionals Lunch – St. Germain des Pres Room (Level 2)


[9:55] Session I –Dosimetry



[12:30] End of Conference

[11:40] Session F –Hardening by Design

[10:55] Session J –Single Event Effects: Mechanisms and Modeling

[2:10] Session G –Photonic Devices and Integrated Circuits

[6:00] End of Sessions

[4:30] End of Sessions

[4:00] Break – La Seine, Foyer Atrium

Schedule

MondayJuly 14Time Tuesday

July 15Wednesday

July 16ThursdayJuly 17

FridayJuly 18

[4:25] Session D –Single Event Effects: Devices and Integrated Circuits

[9:00] Invited Talk –Napoleon Bonaparte meets Alexander the Great in the French Campaign in Egypt and SyriaAndrew Michael ChuggLa Seine A-B-C

[9:00] Invited Talk –Space Flight Project Complexity: Human Risk ManagementMichel TogniniLa Seine A-B-C


[11:00] Session H (continued)

[11:55] Part 3 – SEE on Advanced CMOS Bulk, FinFET and UTBB SOI TechnologiesPhilippe Roche and Gilles Gasiot

[1:00] Women in Engineering Invited Talk – Women in Aerospace Today Luisella Giulicchi, La Seine A-B-C

[5:45 to 6:30] RADECS Association Annual Open Meeting – La Seine A-B-C

ii

Chairman’s Invitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1Short Course Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2Short Course . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Course Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3Part 1 – Comparative Earth and Jovian Space Environment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4Part 2 – Dose and Dose Rate Effects in Micro-Electronics: Pushing the Limits to Extreme Conditions . 5Part 3 – SEE on Advanced CMOS Bulk, FinFET and UTBB SOI Technologies . . . . . . . . . . . . . . . . . . . . . . 6Part 4 – Facilities and Methods for Radiation Testing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7Part 5 – Radiation Effects, Calculation Methods and Radiation Test Challenges in Accelerator Mixed Beam Environments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Technical Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Technical Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Invited Speakers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Late-News Papers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Tuesday, July 15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Session A - Basic Mechanisms of Radiation Effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Session B - Hardness Assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Session C - Radiation Effects in Devices and Integrated Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Session D - Single Event Effects: Devices and Integrated Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Wednesday, July 16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Invited Talk - Paris, a Beacon for the World? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Session E - Single Event Effects: Transient Characterization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Session F - Hardening by Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Session G - Photonic Devices and Integrated Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Radiation Effects Data Workshop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Thursday, July 17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Invited Talk - Napoleon Bonaparte meets Alexander the Great in the French Campaign in Egypt and Syria . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Session H - Space and Terrestrial Environments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Invited Talk - Women in Aerospace Today . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Poster Session . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45Friday, July 18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Invited Talk - Space Flight Project Complexity: Human Risk Management . . . . . . . . . . . . . . . . . . . . 47 Session I - Dosimetry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Session J - Single Event Effects: Mechanisms and Modeling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

RESG NEWS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53Awards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

2013 NSREC Awards, 2013 RADECS Awards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 562014 Radiation Effects Award . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

Conference Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57Rooms for Side Meetings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57Included Meals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57Business Center . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57

Registration and Travel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58Conference Registration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58On-Site Registration Hours . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58Conference Cancellation Policy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58Hotel Reservations and Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59Airport and Transportation Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60Driving/Parking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61Getting Around Town . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

Industrial Exhibits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 632014 IEEE NSREC Technical Sessions and Short Course Registration Form . . . . . . . . . . . . . . . 652014 IEEE NSREC Activities Registration Form . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67Social Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69

Industrial Exhibits Reception . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71Seine Dinner Cruise - Conference Social . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71

Local Activities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74Weather and Clothing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77

2014 Conference Committee . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78Official Reviewers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79Radiation Effects Steering Group . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 802015 Announcement and First Call for Papers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81

Contents

Section HeadingSection Heading

11

On behalf of the IEEE Nuclear and Plasma Sciences Society Radiation Effects Committee and the 2014 Nuclear and Space Radiation Effects Conference (NSREC) Committee, it is my pleasure and privilege to invite you to attend the 51st annual IEEE NSREC to be held July 14-18, 2014, at the Marriott Rive Gauche Hotel in Paris, France. This year the conference is being held in collaboration with the RADECS Association. Without this collaboration it would not have been feasible to hold NSREC in Europe. This is the first time that NSREC crosses the Atlantic and the con-ference committee is honored to have been selected for this privilege. Our Committee has worked hard to offer an outstanding venue and program for this special edition.

The conference starts on Monday, July 14, with a one-day Short Course, organized by Frédéric Saigné (IES/University of Montpellier) with a theme of “Radiation Environments and Their Effects on Devices from Space to Ground.” This Short Course is an excellent learning opportunity for those who are new to the radiation effects community and need a quick introduction to the field, as well as those who want to stay abreast of the current issues in radiation effects. The course is divided into five lectures, three covering the radiation environment and its effects on devices, one dedicated to facilities and methods for radiation testing, and a final one describ-ing the unique engineering challenge of the radiation hardness assurance of the Large Hadron Collider of CERN. In addition, a compendium of past short course notes will be distributed to Short Course attendees.

The technical program is from Tuesday, July 15, to Friday, July 18. The Technical Program Chair, Véronique Ferlet-Cavrois (ESA/ESTEC), and her technical committee have assembled an outstanding program of contributed papers describing the latest information on nuclear and space radiation effects on electronic and photonic materi-als, devices, circuits, and systems, and the engineering of radiation-tolerant devices and integrated circuits. Presentations will include ten oral sessions and a poster venue allowing direct discussions with authors. In addition, there will be a Radiation Effects Data Workshop consisting of poster presentations describing radiation effects data on electronic and photonic devices, and new simulation tools or test facilities. Véronique has also invited guest speakers to give talks of more general interest.

The Industrial Exhibit has been organized by Dominique de Saint-Roman (Consultant) and Odile Ronat (International Rectifier). The exhibit will permit one-on-one discussions between conference attendees and exhibitors on the latest developments in areas such as radiation-hardened and radiation-tolerant electron-ics, engineering services, facilities, modeling, and equipment. This year, the Exhibit will open Tuesday morning and close Thursday afternoon after lunch. Light lunches will be offered to registered attendees and exhibitors within the Exhibition area on Tuesday, Wednesday, and Thursday. On Tuesday evening, attendees and their com-panions are invited to a reception that showcases the Industrial Exhibit.

Philippe Paillet (CEA), Local Arrangements Chair, has arranged an outstanding social program in Paris. The Conference Social on Wednesday evening will be the highlight of this program and will transport us on an unforgettable dinner cruise on the Seine River. Visits to Versailles and Montmartre are highlights of an outstanding compan-ions program. The Conference location right in the heart of Paris also allows easy access to any city site through the urban metro network.

The NSREC 2014 conference committee, not forgetting Publicity Chair, Teresa Farris (Aeroflex), Finance Co-Chairs Christian Chatry (TRAD) and Steven McClure (JPL), and Awards Chair Robert Reed (Vanderbilt) join me in welcoming you to the City of Lights.

We are looking forward to seeing you in Paris this July.

Bienvenue en France et à Paris!

“On behalf of the NSREC 2014 committee, volunteers, and staff, I would like to thank all the authors, exhibitors, reviewers, and attendees who join in building together an exciting technical and social international event in our field. This conference is made by you and for you. I also welcome you and your family to stay for some extra time and have a good time in Paris and in France.”

Robert EcoffetNSREC 2014 General ChairmanCNES

Visit us on the web at:www .nsrec .com

Chairman’s Invitation

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REGISTRATION(Le Parc Montsouris A, Parisian Gardens, Level 3)

SHORT COURSE INTRODUCTIONFrédéric Saigné, Université Montpellier 2

PART 1 — COMPARATIVE EARTH AND JOVIAN SPACE ENVIRONMENTSébastien Bourdarie, ONERA

BREAk (La Seine, Foyer Atrium)

PART 2 — DOSE AND DOSE RATE EFFECTS IN MICRO-ELECTRONICS: PUSHING THE LIMITS TO ExTREME CONDITIONSPhilippe Adell, NASA - Jet Propulsion LaboratoryJérome Boch, Université Montpellier 2

PART 3 — SEE ON ADVANCED CMOS BULk, FINFET AND UTBB SOI TECHNOLOGIESPhilippe Roche and Gilles Gasiot, STMicroelectronics

SHORT COURSE LUNCHEON (Le Jardin du Luxembourg, Parisian Gardens, Level 3)

PART 4 — FACILITIES AND METHODS FOR RADIATION TESTINGFrançoise Bezerra, CNESVincent Pouget, IES - CNRS

BREAk (La Seine, Foyer Atrium)

PART 5 — RADIATION EFFECTS, CALCULATION METHODS AND RADIATION TEST CHALLENGES IN ACCELERATOR MIxED BEAM ENVIRONMENTSMarkus Brugger, CERN

WRAP-UP

ExAM (only for students requesting CEU credit)

END OF SHORT COURSE

8:15 AM

9:00 AM

9:10 AM

10:30 AM

10:55 AM

11:55 AM

1:00 PM

2:30 PM

4:00 PM

4:25 PM

5:35 PM

5:50 PM

6:20 PM

RADIATION ENVIRONMENTS AND THEIR EFFECTS ON DEVICES FROM SPACE TO GROUND

LA SEINE, THE BANkS OF THE RIVER SEINE, LEVEL 0 – MONDAy, JULy 14

Short Course Program

Each attendee will receive a CD-ROM archive of IEEE NSREC Short Course Notebooks (1980-2014); there will be no Short Course Printed Notebook in 2014.

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COURSE DESCRIPTION

CONTINUING EDUCATION

UNITS (CEUS)

SHORT COURSE CHAIRMAN

A one-day Short Course “Radiation Environments and Their Effects on Devices from Space to Ground” will be presented at the 2014 IEEE Nuclear and Space Radiation Effects Conference (NSREC). This short course will provide an introduction to space and accelerator environments, their effects on advanced devices and the way to test devices to radiations for those new to the field, as well as introducing advanced con-cepts and emerging issues for those experienced in the field. The 2014 Short Course will cover topics ranging from the harsh environments to effects on advanced devices and qualification procedures.

The Short Course is organized into five sessions starting with a session comparing the Earth and Jovian space environments. The second session presents an update of the most recent research about dose rate effects in SiO2-based electronics. This session will include the basics of total ionizing dose effects and physical mechanisms. After a general overview of Single Event Effects (SEE) in electronic devices, the third session focuses on SEE on advanced CMOS Bulk, FinFET and UTBB SOI technologies while the fourth session focuses on facilities and methods for radiation testing. The last session addresses the specific case of radiation effects in accelerator mixed beam environments. The presenters for the 2014 short course are well-known experts in their respective areas. They will cover the background needed for newcomers to the radiation-effects field, as well as addressing current topics and advanced technologies.

The course is intended for designers, radiation engineers, component specialists, and other technical and management personnel who are involved in developing reliable systems designed to operate in radiation environments. This course provides a unique opportunity to NSREC attendees to benefit from the expertise of the instructors, as well as the in-depth coverage and application-oriented perspective provided by the short course format. In-depth notes will be provided at registration.

For those interested in Continuing Education Units (CEUs), there will be an open-book test at the end of the course. The course is valued at 0.6 CEUs and is endorsed by the IEEE and the International Association for Continuing Education and Training (IACET).

Dr. Frédéric Saigné graduated in Electronics at the Université of Montpellier 2. He spent a research period at Vanderbilt University and after appointment at the Reims Champagne Ardennes University, he is now Professor and Head of the Radiation Effects on Components (RADIAC) research team at the Université of Montpellier 2. His research activity has been directed to the study of dose effect in electronics, and reliability of semiconductor devices. He has authored or co-authored over 200 papers in referenced journals or conferences. In 2010, he created the first national research group on radiation effects on electronic devices at ground and atmospheric level in France. In collaboration with CNES and ESA, he has also founded, in 2013, the Van Allen Fundation dedicated to the development of universitary nanosatellites. He has been technical chair at RADECS 2005 in Cap d’Agde (France) and member of the RADECS steering committee from 2002 to 2007.

Frédéric SaignéShort Course Chairman

Short Course

4

Smaller HeadingSmaller Heading

4

The effects of the space radiation environment on spacecraft systems and instruments are significant design considerations for space missions. In order to meet these chal-lenges and have reliable, cost-effective designs, the radiation environment must be understood and accurately modelled. The nature of the space environment varies greatly between the Earth and Jupiter. The Jovian space environment is well known to be much more aggressive than the Earth one, however many similarities can be found. In both space environment there are short-term variations (magnetic storms and substorms) while a clear evidence for long-term variations with the phase of the solar cycle was only found for the Earth. In this paper we concentrate mainly on charged particle radiations. Descriptions of the radiation belts applicable to magne-tized planets are reviewed. An overview of the traditional models is presented accom-panied by their application areas and limitations.

The Earth and Jovian Magnetosphere Structure■ Dimension and shape■ Planetary magnetic field■ Moons and their influence on the environment

Focus on the Radiation Belts ■ Description■ Dynamics

Specification Models

And Other Planets Then?

COMPARATIVE EARTH AND JOVIAN SPACE ENVIRONMENTSébastien BourdarieONERA - The Aerospace Lab

Dr Sébastien Bourdarie has worked at the Space Environment Department of ONERA since 1993. He is currently involved in physical modelling of electron radiation belts (Salammbo code) for the Earth and Jupiter, as well as artificial radiation belts cre-ated by high-altitude nuclear weapons. Related to this activity, he acquired a great experience in processing and interpreting data from particle detectors onboard different satellites. He has devel-oped a space radiation database from various monitors. He is involved in data assimilation tool development, in particular an ensemble Kalman filter for the Earth electron radiation belt. He is also involved in spacecraft anomaly analysis. He is also in charge of supervision and exami-nation of PhD students. He is a teacher in space environment. Responsibilities and achieve-ment: 2013-today: Member of the science committee board of the Solar-Heliosphere-Magnetosphere group from CNES; 2010-today: Member of the science com-mittee board of the Sun-Earth system (PNST) division of CNRS; 2009-today: Member of the science committee board of the Physics division at ONERA; 2006-today: Member of the RADECS (RADiation Effects on Components and Systems) council board; 2004-2012: Chairman of the COSPAR PRBEM panel, 1997-2009: Manager for DESP computer infrastructure.

Short Course Monday

5

Short Course Monday

In this course, we provide an update of the most recent research about total ionizing dose (TID) and dose rate effects in SiO2-based devices. The objective is to cover what has been done in the past 5-7 years on the topic of low dose rate effects and high total dose level. Some of the subtopics will include:

Overview of TID Effects in Space■ Dose (and dose-rate) levels in space: earth and beyond■ Total ionizing dose and damage processes in SiO2

Dose and Dose Rate Effects in Microelectronics ■ Radiation hardness assurance (RHA) and test standards■ TID effects in MOS devices • Annealingandtimedependenteffects • EffectsonadvancedCMOS■ TID effects in bipolar devices • UpdatesonELDRSmechanismandmodeling • Hydrogencontamination

Pushing the Limits of Commercial Electronics to Extreme Conditions (Temperature and Unconventional Dose Levels)■ High dose missions■ Variable dose rate and very low dose rate■ Low temperature considerations to improve TID performance■ New challenges: Margin discussion, techniques to increase

device lifetime

DOSE AND DOSE RATE EFFECTS IN MICRO-ELECTRONICS: PUSHING THE LIMITS TO ExTREME CONDITIONSPhilippe Adell Jerome Boch NASA - Jet Propulsion Université Montpellier 2Laboratory

Dr. Jerome Boch received his MS (2000) from the Montpellier University and PhD (2003) in Microelectronics from the University of Reims Champagne-Ardenne (France). Prior to accepting a research and teaching position at the University of Nice Sophia-Antipolis (France) in 2003, he spent a year at Vanderbilt University (USA). In 2004, he joined the Radiation Effects on Components (RADIAC) research team as a senior lec-turer at the University of Montpellier and he is now a full time professor. His research activity has been directed to the study of dose effect in electron-ics, and reliability of semiconductor devices. He has authored or co-authored over 90 papers in referenced journals or conferences. He has been technical chair at RADECS 2010 in Langenfeld (Austria), and he served as the session chairman at various RADECS conferences.

Dr. Philippe Adell started working at the NASA-Jet Propulsion Laboratory, in Feb. 2007 after complet-ing his MS (2003) and PhD (2006) in Electrical Engineering at Vanderbilt University. Prior to moving to the US, he had radiation effects research experi-ence with Alcatel Space and the French space agency (CNES). He also graduated from the polytechnic institute of the University of Montpellier (France), with a MS (1999) in material science and technologies. At NASA-JPL, he provided his mission assurance expertise to several JPL flight projects ( Juno, Mars Science Lander, Europa Clipper). He has been appointed by Charles Elachi, JPL director, to be the JPL liaison for future international collabora-tion on interplanetary CubeSats with CNES and the Montpellier’s Van Allen Consortium. Philippe has more than 50 international pub-lications in the field of radiation effects in microelectronics and systems. He has served as session chair and short course instructor in previous NSREC and RADECS editions.

6

Short Course Monday

This short course is focused on Single-Event Effects (SEE) for the terrestrial environments, with implications for space, automotive and medical applications. Philippe Roche and Gilles Gasiot will first give an introduction to SEE by describing the different radiation environments, their interactions with process materials (Si, Boron) and impacts for consumer, safety and high reliability applications. A first part will present the growing impact of radiation effects with technology downscaling. The emphasis will be put on sub-40nm CMOS technologies and new challenges threatening circuit resilience, such as terrestrial muons, thermal neutrons, multiple cell upsets, radioactive contaminants and process variability. The sec-ond part will highlight the radiation performances of state-of-the-art Silicon-On-Insulator (SOI), Bulk and FinFET technologies, com-bining experimental test results and radiation simulations down to the 14nm node.

Introduction■ Radiation environments■ Intrinsic and extrinsic failure mechanisms■ Impacts on consumer, safety and high reliability applications

Shift of Radiation Paradigm With Technology Downscaling■ Muons ■ Thermals■ Ultra-low-alpha materials ■ Multiple cell upsets ■ Variability

Radiation Performances of Sub-40nm Bulk, SOI and FinFET ■ Parasitic bipolar■ Sensitive volume■ 3D TCAD, GEANT4 and test results■ Fully-Depleted Ultra-Thin-Body-BOX (UTBB) SOI■ Partially-Depleted SOI■ FinFET

SEE ON ADVANCED CMOS BULk, FINFET AND UTBB SOI TECHNOLOGIESPhilippe Roche and Gilles Gasiot STMicroelectronics

Dr. Gilles Gasiot received the M.S. (2000) and Ph.D. (2004) in microelectronics from the University of Bordeaux, France. His thesis research (in collaboration with STMicroelectronics and French Atomic Energy Commission at Bruyères-le-Chatel) focused on the reli-ability of bulk and SOI devices in the natural radioactive ter-restrial environment. In 1999, he joined for a trainee period the Radiation Effect Group at Vanderbilt University, USA. Since 2004, he has been with STMicroelectronics, Crolles, France, and has been actively working on soft error rate char-acterization (experi-mental and simulated) for decananometric CMOS processes as well as analog and digital IPs/technol-ogy hardening for space and terrestrial environments. He has coauthored more than 60 articles and holds 4 patents in radiation hardening. Gilles is also Senior member of the IEEE and will be “Hardening by Design” session chairman for this year NSREC.

Dr. Philippe Roche received the M.S. (1995) and Ph.D. (1999) in Semiconductor Physics from Montpellier University, France. Since 1999, he has been with STMicroelectronics, Central R&D, Crolles, France, as Fellow and Team Manager in charge of both radiation, safety aspects and sub-threshold (<0.4V) design, intended to networking, space, automotive, health care, defense, I-o-T. His primary research activities are SEE and TID, as well as Ultra-Low-Voltage circuits for sub-130nm CMOS down to FDSOI 28/14nm. Philippe has been driving the development of the new European Space technology in 65nm CMOS. He has been serving in conferences since 1997, as reviewer, session chairman and short course instructor, such as at IRPS, NSREC, IOLTS, DATE, RADECS, SOI and IEDM. Philippe has coauthored 140+ papers and filed 45+ patents in radiation-hardening and sub-threshold circuits.

7

Short Course Monday

Françoise Bezerra, CNES, and Dr. Vincent Pouget, IES - CNRS, will present different aspects of device testing using either particle accelerators or radioactive sources. After a review of the different terms used in this field and explanation of the different available norms, they will present particle accelerators and sources which are routinely used for characterization. Most common pitfalls will then be addressed and a regular test plan will be detailed. In the second part of the course they will present the principles and applications of the pulsed laser technique for SEE testing. After a brief review of the important experimental parameters of the laser technique, they will present different facilities and several case studies to illustrate the current capabilities and limitations of the technique for SEE test-ing of various semiconductor technologies.

Part 1: Particle Accelerators and Sources (F. BEZERRA)

Introduction, Terms and Examples of Satisfactory Results

Test Methods

Particle Accelerators■ Heavy ions (high and average energies)■ Protons (high and low energies)■ Neutrons (mono energetic or energy spectrum)

Sources

Typical Test Plan for TID, SEE and DDE

Most Common Pitfalls■ Compatibility of test system with test chamber ■ Temperature management and monitoring■ Sample preparation■ …

Part 2: Lasers (V. POUGET)

Introduction, Motivation for SEE Laser Testing

Principles of Laser Testing

■ Single-photon and two-photon absorption■ Review of main experimental parameters

Facilities

Methodology■ Sample preparation■ Typical test campaign■ Common pitfalls and limitations■ Mature applications and methods

FACILITIES AND METHODS FOR RADIATION TESTINGFrançoise Bezerra Vincent Pouget CNES IES - CNRS

Dr. Vincent Pouget is a research scientist of the French National Center for Scientific Research (CNRS) within the RADIAC group of the IES lab of the University of Montpellier, France. Before joining the RADIAC group in 2012, he worked for more than ten years at the IMS lab of the University of Bordeaux where he has co-directed many research projects dealing with radiation effects, as well as other reliability issues in semiconduc-tor devices. He has developed and has been responsible for the ATLAS laser facility for integrated circuits testing, one of the reference facilities for pulsed laser testing of single-event effects. He received his PhD in Instrumentation and Measurement from the University of Bordeaux in 2000. In 2008, he cofounded the Pulscan company. Vincent has coauthored over 80 journal articles and con-ference papers dealing with various applica-tions of laser testing.

Françoise Bezerra received her degree in electronic engineer-ing from the French Civil Aviation National School in 1991. She joined CNES, the French Space Agency, in 1992 as a quality insurance engineer in charge of micro-processors, ASICs and FPGAs. In 1999, she moved to the radiation group where she still coordinates the radia-tion test campaigns, supports projects for the selection and use of electronic devices and manages R&D studies. She is also Principal Investigator of the CARMEN/MEX instrument that stud-ies radiation effects on electronic devices on board of JASON2 and SAC-D satellites and Radiation Safety Officer for the CNES Toulouse. Françoise has coauthored more than 60 papers in radia-tion testing or in-flight experiments and has also chaired sessions at various RADECS con-ferences. Recently, two studies she has driven were awarded as best data workshop paper at the RADECS 2011 and 2012 conferences respectively.

8

RADIATION EFFECTS, CALCULATION METHODS AND RADIATION TEST CHALLENGES IN ACCELERATOR MIXED BEAM ENVIRONMENTS Markus BruggerCERN

Dr. Markus Brugger received his master degree in 1999 from the Technical University, Graz, Austria, finalizing his master studies already at CERN with the level-1 Trigger for the CMS experiment. He then received his degree in Theoretical Physics for activation modelling and bench-marking of Monte-Carlo codes working with the CERN radia-tion protection group. Building on his experience he then moved to the CERN FLUKA team in the context of the LHC machine and performing design studies for LHC. In context with the latter, as from 2008 he got more and more involved in radiation damage to electronics issues and raised pos-sible respective constraints for the LHC machine, finally requiring significant mitigation measures to partly implemented during the past years. Since 2010 he is designated project leader of the ‘Radiation To Electronics’ (R2E) project for the CERN Accelerator and Technology Sector, with work spanning from shielding, radia-tion monitoring, construction of new test facilities and radiation tolerant developments of various critical LHC systems. He teaches FLUKA in dedicated schools, supervises regularly master and PhD students, as well as post-docs, has authored or co-authored more than 50 papers in various journals, conferences and work-shops and is also regular reviewer for several journals.

Markus Brugger, CERN, will address the case of radiation effects in accelerator mixed beam environments. The radiation environment encountered at high-energy accel-erators partly strongly differs from the environment relevant for space applications. The mixed field expected at modern accelerators is composed of charged and neutral hadrons, photons, electrons and muons, ranging from very low (thermal) energies up to the TeV range. Electronic components and systems exposed to a mixed radia-tion field will experience at once all three different types of radiation damages: Single Event Effects (SEEs) , damage from Total Ionizing Dose (TID) and displacement dam-age (DD), where in all cases, not only the particle type, but also the respective energy distribution are to be considered. This course contribution will discuss on modern accelerator environments, respective calculation methods and the impact on radiation tests and design. In addition, both the requirement, as well as the challenge of using commercial components for accelerator applications will be highlighted and respec-tive mitigation measures will be illustrated.

Radiation Environment and Effects Specific for High-Energy Accelerators■ What do we mean by mixed particle/energy fields?■ Overview of CERN’s environments and main radiation effects of concern.■ What is similar/different to the Space environment?■ What do accelerators have to worry about?■ How does it compare to Ground/Low/High-altitude environments?

Monitoring Requirements and Solutions■ What are the respective needs at accelerators? ■ The CERN RadMon system as a possible solution

Calculation Tools and Benchmarking Examples■ FLUKA: a quick and brief introduction■ Application examples to radiation field calculations■ Possible model studies and a few respective examples

Applications, Large Systems and Dependency on COTS■ MTBF optimization as goal (not 100% reliability)■ Associated challenges due to distributed complex systems■ Production challenges and time-lines and respective impact on radiation tests

and procurement

Radiation Testing■ Brief overview of test facilities used in the accelerator context■ Chosen test and qualification strategy■ A new CERN radiation test facility: CHARM

Challenging, though possible! What’s needed and what’s next?

Short Course Monday

9

TECHNICAL INFORMATION

The NSREC technical program will consist of contributed oral, poster papers, a data workshop, three invited presentations, and a Women in Engineering talk. The oral presentations will be 12 minutes in duration with an additional 3 minutes for ques-tions. The Technical Sessions and Chairpersons are:

■ Basic Mechanisms of Radiation Effects Chair: Hugh Barnaby, Arizona State University

■ Hardness Assurance Chair: Sana Rezgui, Linear Technology

■ Radiation Effects in Devices and Integrated Circuits Chair: Simone Gerardin, University of Padova

■ Single Event Effects: Devices and Integrated Circuits Chair: Daniel Loveless, Vanderbilt University

■ Single Event Effects: Transient Characterization Chair: Daisuke Kobayashi, ISAS/JAXA

■ Hardening By Design Chair: Gilles Gasiot, STMicroelectronics

■ Photonic Devices and Integrated Circuits Chair: Scott Messenger, University of Maryland, Baltimore County

■ Space and Terrestrial Environments Chair: Eamonn Daly, ESA/ESTEC

■ Dosimetry Chair: Arto Javanainen, University of Jyväskylä

■ Single Event Effects: Mechanisms and Modeling Chair: Nathaniel A. Dodds, Sandia National Laboratories

POSTER SESSION

RADIATION EFFECTS DATA WORkSHOP

INVITED SPEAkERS

WOMEN IN ENGINEERING

LATE-NEWS PAPERS

Those papers that can be presented more effectively in a visual format with group discussion will be displayed in the Poster Session on Tuesday through Friday on the Les Clubs de Jazz / Jazz, Level -1. The formal Poster Session will be held on Wednesday from 3:30 to 6:00 PM and the authors will be available at that time to dis-cuss their work. The Poster Session is chaired by Jean-Luc Leray, CEA.

Workshop papers provide piece part radiation response data and radiation test facili-ties technical information. The intent of the workshop is to provide data and facilities information to support design and radiation testing activities. Workshop papers can be viewed Tuesday through Friday on the Les Clubs de Jazz / Jazz, Level -1. Authors will be available on Thursday to discuss their work from 1:45 to 4:30 PM. A workshop record will be mailed to all registered conference attendees. The workshop chair is Farok Irom, Jet Propulsion Laboratory, and Stefan Metzger, Fraunhofer Institute.

■ Paris, a Beacon for the World? Olivier Chavaren, Licensed Guide of Paris and Its 150 Museums

■ Napoleon Bonaparte meets Alexander the Great in the French Campaign in Egypt and Syria Andrew Michael Chugg, MBDA

■ Space Flight Project Complexity: Human Risk Management Michel Tognini, Astronaut

■ Women in Aerospace Today Luisella Giulicchi, European Space Agency

Late-news papers will be accepted and included in the Poster Session and the Radiation Effects Data Workshop. The deadline for submission is May 2, 2014. Detailed instructions for submitting a late-news summary are available on the NSREC web site at www.nsrec.com.

Technical Program

“On behalf of the Technical Program Committee, I would like to invite you to attend the 2014 NSREC Technical Sessions. For this Parisian edition of NSREC, held in collaboration with the RADECS association, we have assembled an exceptional high-quality program. The larger than usual number of presentations will provide the latest advances in nuclear, space and terrestrial radiation effects.”

Véronique Ferlet-Cavrois, European Space Agency, ESA/ESTECTechnical Program Chair

10

LA Seine A-B-C9:00 AM

9:05 AM

9:35 AM

SESSION A9:40 AM

A-19:45 AM

A-210:00 AM

A-310:15 AM

A-410:30 AM

OPENING REMARkSRobert Ecoffet, CNES, General Chairman

AWARDS PRESENTATIONMarty Shaneyfelt, Sandia National Laboratories, Radiation Effects Steering Group Chairman

AWARDS PRESENTATIONPhilippe Calvel, Thales Alenia Space, President of the RADECS Association

TECHNICAL SESSION OPENING REMARkSVéronique Ferlet-Cavrois, ESA/ESTEC, Technical Program Chairman

BASIC MECHANISMS OF RADIATION EFFECTSSeSSion inTroduCTionChair: Hugh Barnaby, Arizona State University

Field Dependence of Charge yield in Silicon DioxideAllan H. Johnston, J-K Associates; Randall T. Swimm, Man Tech; Dennis O. Thorbourn, Jet Propulsion Laboratory

New data show that charge yield at low temperature is much higher than theoretical predictions. Recombination at contacts is proposed to explain this, due to the large value of the Onsager radius at low temperature.

Exploring the kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of SiliconMelanie Raine, Philippe Paillet, Olivier Duhamel, Marc Gaillardin, Nicolas Richard, CEA; Vincent Goiffon, Pierre Magnan, ISAE; Sylvain Girard, Universite de Saint-Etienne; Cedric Virmontois, CNES

Single Particle Displacement Damage events are recorded continuously and in real time under neutron irradiation, in arrays of silicon microvolumes. The kinetics of their formation and short-term annealing are analyzed.

Displacement Damage Effects in Quantum Well Solar CellsRobert J. Walters, Sergey Maximenko, Naval Research Laboratory; Raymond Hoheisel, Matthew P. Lumb, George Washington University; Maria González, Sotera Defense Solutions; Scott R. Messenger, University of Maryland Baltimore County

Quantum-well solar cells have been irradiated with electrons to determine displace-ment damage effects on device performance. Diffusion length degradation and carrier removal are found to be the dominant damage mechanisms.

Bias Dependence of Total Ionizing Dose Effects in SiGe-SiO2/HfO2 DevicesGuoxing Duan, Daniel M. Fleetwood, Cher Xuan Zhang, En Xia Zhang, Ronald D. Schrimpf, Robert A. Reed, Michael M. Alles, Vanderbilt University; Gennadi Bersuker, SEMATECH; Chadwin D. Young, University of Texas at Dallas

The TID radiation response of SiGe-SiO2/HfO2 pMOS FinFETs is investigated under different device bias conditions. Negative bias irradiation leads to the worst-case deg-radation due to increased hole trapping in the HfO2 layer.

Technical Program Tuesday

11

A-510:45 AM

POSTER PAPERSPA-1

PA-2

PA-3

PA-4

PA-5

Radiation Effects from Proton Radiation in Carbon Nanotube Field Effect TransistorsAdam W. Bushmaker, Don Walker, Colin Mann, Alan R. Hopkins, The Aerospace Corporation; Moh R. Amer, Stephen B. Cronin, The University of Southern California

We measure electrical properties of carbon nanotube field effect transistors exposed to proton radiation, to study carbon nanoelectronics technology operating in the space environment. Single event effects, threshold voltage shifts, and transconductance deg-radations were observed.

Analysis of Radiation Effects in Silicon Using kinetic Monte Carlo MethodsBrian D. Hehr, Sandia National Laboratories

A kinetic Monte Carlo code has been developed and employed to investigate anneal-ing in electron-irradiated silicon and also the recovery of base current in transistors bombarded with neutrons at the Los Alamos LANSCE facility.

Structural and Material Changes in Chalcogenide Glasses under Ion IrradiationTyler Nichol, Muhammad R Latif, Mahesh S. Ailavajhala, Dmitri A. Tenne, Boise State University; Hugh J. Barnaby, Yago Gonzalez-Velo, Michael N. Kozicki, Arizona State University; Maria Mitkova, Boise State University

We present results on structural and compositional changes in chalcogenide glasses under Ar+ ion irradiation as a function of dose and ion energies and suggest applica-tion for the formation of RCBM device array.

Radiation-Induced Degradation of Transport in Nanoscale TransistorIvan Sanchez Esqueda, USC Information Sciences Institute; Cory Cress, Navy Research Laboratory; Yu Cao, Yuchi Che, Chongwu Zhou, University of Southern California

Using the Landauer approach to carrier transport we describe the impact of radiation-induced defects on the transport properties of nanoscale transistors that operate in the quasi-ballistic regime.

Total Ionizing Dose Effects on MoS2 TransistorsCher Xuan Zhang, A. K. M. Newaz, En Xia Zhang, Bin Wang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Kirill I. Bolotin, Sokrates T. Pantelides, Vanderbilt University

MoS2 transistors show positive I-V shifts during positive or negative bias irradia-tion. Density functional theory calculations suggest adsorbed O atoms on MoS2 from ozone decomposition during 10-keV x-ray irradiation are electron traps.

Radiation Effects on Encapsulated Graphene-hBN DevicesCher Xuan Zhang, En Xia Zhang, Bin Wang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Sokrates T. Pantelides, Vanderbilt University; Aidan Rooney, K Khestanova, Roman Gorbachev, Sarah Haigh, University of Manchester

The 10-keV x-ray irradiation response of encapsulated graphene-hBN devices is evaluated. First-principles calculations identify the observed defects as B/N vacancies and CH interstitials.


12

PA-6

11:00 – 11:25 AMFoyer ATriuM

SESSION B11:25 AM

B-111:30 AM

B-211:45 AM

B-312:00 PM

Reverse Annealing Comparisons of PnP and Npn III-V HBTs under Ion Irradiation: Probing the Effects of Thermal and Current Injection AnnealingEdward Bielejec, G. Vizkelethy, R. M. Fleming, D. K. Serkland, G. A. Patrizi, D. B. King, Sandia National Laboratories

We present a comparison of early-time reverse annealing in PnP and Npn HBTs. We find that while the PnPs demonstrate reverse annealing, for equivalent conditions (ion species, temperature) Npns do not have reverse annealing.

BreAK - induSTriAL exhiBiTS

HARDNESS ASSURANCESeSSion inTroduCTionChair: Sana Rezgui, Linear Technology

Power Mosfet Heavy Ion Single-Event Effect Failure Rate Prediction Methods: A Comparison StudyJean-Marie Lauenstein, Kenneth A. LaBel, NASA/GSFC; Véronique Ferlet-Cavrois, ESA/ESTEC

SEB and SEGR failure rate prediction methods for power MOSFETs are compared and rates are calculated for two devices. Emphasis is made on test data requirements and the relative strengths and limitations of the methods.

Determination of Single-Event Effect Mitigation and Application Requirements for Enhancement Mode Gallium Nitride HEMTs for Use in Point-of-Load ConvertersLeif Z. Scheick, Chistopher Stell, JPL/CIT

The characterization of destructive Single-Event Effects in enhancement GaN HEMTs is presented as related to the optimal application of and operating conditions for power management circuits. A mechanism for the phenomenon is also investigated.

Hardness Assurance in Advanced Semiconductor Packaging with krypton-85 Leak TestingGary Lum, Lockheed Martin Space Systems Company; David Beutler, MannaTech Engineering, LLC; Dolores Walters, L3 Applied Technologies; William P. Ballard, Sandia National Laboratories

Significant gain degradation was observed from 85Kr leak testing of a bipolar dis-crete. The implications for hardness assurance are raised in advanced hermetic semi-conductor packaging.


13

B-412:15 PM

B-512:30 PM

B-612:45 PM

POSTER PAPERSPB-1

PB-2

Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash MemoriesMarta Bagatin, Simone Gerardin, Federica Ferrarese, Alessandro Paccagnella, DEI - University of Padova; Véronique Ferlet-Cavrois, Alessandra Costantino, Michele Muschitiello, ESA/ESTEC; Angelo Visconti, Micron Technology; Pierre-Xiao Wang, 3D PLUS

The variability in the total dose response of 25nm single level cell NAND Flash mem-ories from two different lots is studied. More than 1 Terabit of cells were irradiated with gamma rays and statistically analyzed.

Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled TechnologiesJonathan A. Pellish, Kenneth A. LaBel, NASA/GSFC; Paul W. Marshall, NASA Consultant; Kenneth P. Rodbell, Michael S. Gordon, IBM Thomas J. Watson Research Center; James R. Schwank, Sandia National Laboratories; Carlos M. Castaneda, University of California at Davis; Melanie D. Berg, Hak S. Kim, Anthony M. Phan, Christina M. Seidleck, AS&D, Inc.

We report low-energy proton and alpha particle SEE data on a 32 nm SOI CMOS SRAM that demonstrates the criticality of understanding and using low-energy pro-tons for SEE testing of highly-scaled technologies.

Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton BeamNathaniel A. Dodds, James R. Schwank, Marty R. Shaneyfelt, Paul E. Dodd, Barney L. Doyle, Sandia National Laboratories; Michael Trinczek, Ewart W. Blackmore, TRIUMF; Kenneth P. Rodbell, IBM; Robert A. Reed, Vanderbilt University; Jonathan A. Pellish, Kenneth A. LaBel, NASA/GSFC; Paul W. Marshall, NASA Consultant; Scot E. Swanson, Gyorgy Vizkelethy, Stuart Van Deusen, Sandia National Laboratories

When degrading a high-energy proton beam, a low-energy proton energy spectrum is produced whose shape matches that of all shielded space environments. This phe-nomenon dramatically simplifies rate prediction for proton-direct-ionization effects.

Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTsZachary E. Fleetwood, Adilson S. Cardoso, Nelson E. Lourenco, Ickhyun Song, John D. Cressler, Georgia Institute of Technology; Edward Wilcox, AS&D; Stanley D. Philips, Rajan Arora, Texas Instruments; Pauline Paki, Defense Threat Reduction Agency

The total ionizing dose response of fourth-generation SiGe HBT voltage reference is assessed at both low and high dose rates to evaluate ELDRS in a new SiGe BiCMOS technology.

Study of a Thermal Annealing Approach for Very High Total Dose EnvironmentsStephanie Dhombres, Alain Michez, Jerome Boch, Frédéric Saigné, Jean-Roch Vaille, Université Montpellier 2; Stephane Beauvivre, Daniel Kraehenbuehl, Systheia; Philippe C. Adell, Jet Propulsion Laboratory; Eric Lorfevre, Robert Ecoffet, Centre National d’Etudes Spatiales

A new thermal annealing approach applied to MOS and APS devices help extend their operating lifetime when exposed to very high dose levels. The impact of electric field during annealing is also investigated.


14

PB-3

PB-4

PB-5

PB-6

1:00 – 2:10 PMFoyer ATriuM

SESSION C2:10 PM

C-12:15 PM

On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area DeterminationAymeric Privat, Antoine D. Touboul, Alain Michez, Jean-Roch Vaille, Frederic Wrobel, Frédéric Saigné, Université Montpellier 2; Sebastien Bourdarie, ONERA; Nathalie Chatry, TRAD; Géraldine Chaumont, STMicroelectronics; Eric Lorfèvre, Françoise Bezerra, CNES

Electrical characterizations are used to understand different failure mechanisms after heavy ion irradiation of power MOSFETs. This work addresses the limit of the post-irradiation gate stress relevance used for Power MOSFETs space qualification.

SEL Cross Section Energy Dependence Impact on the High-Energy Accelerator Error RateRubén Garcia Alia, Salvatore Danzeca, CERN and Université Montpellier 2; Markus Brugger, Mekki Julien, Spiezia Giovanni, Slawosz Uznanski, CERN; Ewart Blackmore, Michael Trinczek, TRIUMF Laboratory; Véronique Ferlet-Cavrois, Christian Poivey, European Space Agency; Rémi Gaillard, Consultant; Ketil Roed, University of Oslo; Frédéric Saigné, Frederic Wrobel, Université Montpellier 2

Test data and implications of the proton SEL cross section increase in the 100- 480 MeV range on the estimated failure rate for energetic environments such as the CERN LHC or avionic are presented.

A Calculation Method for Proton Direct Ionization Induced SEU Rate from Experimental Data: Application to a Commercial 45nm FPGANicolas Sukhaseum, Anne Samaras, TRAD; Françoise Bezerra, Robert Ecoffet, CNES

SEU proton direct ionization is experimentally observed in 90nm, 65nm and 45nm technologies. In this study, an estimation of the direct ionization SEU rate, based on experimental results, is proposed, for a 45nm CMOS FPGA.

An Analysis of Heavy-Ion Single Event Effects for a Variety of Finite State-Machine Mitigation StrategiesMelanie D. Berg, Hak S. Kim, Anthony M. Phan, Christina M. Seidleck, AS&D, Inc.; Kenneth A. LaBel, NASA/GSFC

We analyze single event upsets (SEUs) for a variety of finite state-machines (FSMs). The study examines the efficacy of FSM mitigation. The investigation includes single event transient and global-routing SEU response across frequency.

LunCh - induSTriAL exhiBiTS

RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITSSeSSion inTroduCTionChair: Simone Gerardin, University of Padova

A New Total Ionizing Dose Response Observed in PDSOI TransistorsMichael L. Alles, Dennis R. Ball, Ronald D. Schrimpf, Vanderbilt University; Harold L. Hughes, Naval Research Laboratory; Patrick J. McMarr, 3Sotera Defense Solutions

Measured results and 3D TCAD simulations demonstrate that PDSOI devices may exhibit a TID response more like FDSOI devices, attributable to regions of lighter body doping and trapped charge in the isolation regions.


15

C-22:30 PM

C-32:45 PM

C-43:00 PM

C-53:15 PM

C-63:30 PM

Geometry Dependence of Total-Dose Effects in Bulk FinFETsIndranil Chatterjee, En Xia Zhang, Bharat L Bhuva, Robert A. Reed, Michael L. Alles, Dennis R. Ball, Ronald D. Schrimpf, Daniel M. Fleetwood, Vanderbilt University; Dimitri Linten, Eddy Simoen, Cor Claeys, Jerome Mitard, IMEC

The total ionizing dose response of bulk FinFETs is investigated for various geom-etries. Experiments show that transistors with thinner fin-width degrade more, while those with a smaller pitch and longer channel length degrade less.

Observed Effects of Ionizing Radiation on PMOS Negative Bias Temperature InstabilityKevin B. Geoghegan, The Defense MicroElectronics Activity and The Naval Postgraduate School; Jeffrey J. Siddiqui, The Defense MicroElectronics Activity; Todd R. Weatherford, The Naval Postgraduate School

Synergistic effects of ionizing radiation and negative bias temperature instability on pchannel MOSFETs were investigated. Data analysis presented herein reveals an unexpected relationship not purely additive in nature signifying the involvement of secondary physical mechanisms.

RF Performance of Proton-Irradiated AlGaN/GaN HEMTsJin Chen, En Xia Zhang, Cher Xuan Zhang, Michael W. McCurdy, Daniel M. Fleetwood, Ronald D. Schrimpf, Vanderbilt University; Stephen W. Kaun, Erin C. H. Kyle, James S. Speck, University of California, Santa Barbara

AlGaN/GaN HEMTs irradiated with 1.8-MeV protons show more degradation in RF current gain, fT, and fmax than DC transconductance. This results from fast bulk and surface traps, as well as impedance mismatch.

Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in TaOx MemristorsDavid R. Hughart, Andrew J. Lohn, Patrick R. Mickel, Paul E. Dodd, Marty R. Shaneyfelt, Edward Bielejec, Gyorgy Vizkelethy, Barney L. Doyle, Michael L. McLain, Matthew J. Marinella, Sandia National Laboratories

Radiation sensitive regions of TaOx memristors are mapped by measuring resistance during microbeam irradiation. Multiple sensitive areas exist on the perimeter, sug-gesting the sensitive volume is composed of multiple conducting filaments at the device edges.

TID and Displacement Damage Resilience of 1T1R HfO2/Hf Resistive MemoriesStephanie L. Weeden-Wright, William G. Bennett, Nicholas C. Hooten, En Xia Zhang, Mike W. McCurdy, Ronald D. Schrimpf, Robert A. Reed, Michael A. Alles, Robert A. Weller, Daniel M. Fleetwood, Vanderbilt University; Dimitri Linten, Malgorzata Jurczak, Andrea Fantini, IMEC

Irradiation of RRAM memory cells demonstrates resilience to ionizing dose and displacement damage, despite the presence of a non-hardened access transistor. Self-healing of radiation-induced damage in the resistive element is shown.


16


C-73:45 PM

POSTER PAPERSPC-1

PC-2

PC-3

PC-4

Total Ionizing Dose Induced Timing Window Violations in CMOS MicrocontrollersZachary J. Diggins, Nagabhushan Mahadevan, Daniel Herbison, Gabor Karsai, Eric Barth, Robert A. Reed, Ronald Schrimpf, Robert A. Weller, Michael Alles, Arthur Witulski, Vanderbilt University

Timing window violations are demonstrated to be the primary radiation-induced fail-ure mode for a class of low power microcontrollers. A model for the degradation and hardening implications are presented.

Ionizing Radiation Effects on Non-Volatile Memory Properties of Programmable Metallization CellsJennifer L. Taggart, Yago Gonzalez-Velo, Debayan Mahalanabis, Adnan Mahmud, Hugh J. Barnaby, Michael N. Kozicki, Keith E. Holbert, Arizona State University; Maria Mitkova, Kassandra Wolf, Boise State University; Erica Deionno, The Aerospace Corporation

Impact of ionizing radiation on the retention and endurance of PMC ReRAM cells is presented for the first time, as well as additional work on resistance switching. Endurance appears to be slightly reduced with TID.

Total Dose Hardness of TiN/HfOx/TiN Resistive Random Access Memory DevicesKatrina A. Morgan, Ruomeng Huang, William Redman-White, Kees De Groot, University of Southampton; Kenneth Potter, Chris Shaw, AWE

Resistive random access memory based on TiN/HfOx/TiN has been fabricated. Sweep and pulsed electrical characteristics were extracted before and after Co60 gamma irradiation. All devices were shown as radiation hard at 10Mrad(Si).

The Susceptibility of TaOx-Based Memristive Devices to Continuous and Pulsed Ionizing RadiationMichael McLain, Tim Sheridan, Patrick Mickel, Don Hanson, Gary Chantler, David Hughart, Matt Marinella, Kyle McDonald, Sandia National Laboratories

The effects of continuous and pulsed ionizing radiation on TaOx memristors are investigated. The data indicates that it is possible for the devices to switch from a high-resistance state to a low-resistance state.

Impact of Total Ionizing Dose on the Data Retention of a 65nm SONOS Based NOR FlashHelmut Puchner, Paul Ruths, Venkatraman Prabhakar, Igor Kouznetsov, Sam Geha, Cypress Semiconductor

The impact of total ionizing dose (TID) on the data retention behavior of a 65nm CMOS based 4Mbit SONOS NOR flash non-volatile memory is studied for the first time up to 500krad.

17


PC-5

PC-6

PC-7

PC-8

PC-9

Effects of Proton and x-Ray Irradiation on Graphene Field-Effect Transistors with Thin Gate DielectricsSarah A. Francis, James C. Petrosky, John W. McClory, Evan Kemp, Air Force Institute of Technology; Cory D. Cress, Naval Research Laboratory

Charge pumping and Id-Vg hysteresis are used to investigate degradation and envi-ronmental effects in xray and proton-irradiated graphene transistors. Increases in hysteresis indicate radiation-induced oxide damage, while charge pumping indicates de-doping.

Total Dose Effects in TDBC SOI NMOSFETsJiexin Luo, Jing Chen, Zhan Chai, Shanghai Institute of Microsystem and Information Technology, China; Kai Lu, University of Chinese Academy of Sciences; En Xia Zhang, Daniel M. Fleetwood, Vanderbilt University; Xi Wang, Shanghai Institute of Microsystem and Information Technology

The TDBC SOI MOSFET utilizes a shallow source and a deep drain. As a result, this structure design can significantly reduce radiation induced back-channel leakage.

Total Ionizing Dose Effects Mitigation Strategy for Nanoscaled FDSOI TechnologiesMarc Gaillardin, Philippe Paillet, Melanie Raine, Martial Martinez, CEA, DAM, DIF; Francois Andrieu, Olivier Faynot, CEA, LETI-Minatec

We propose a TID effect hardening strategy for nanoscaled Ultra-Thin BOX SOI tech-nologies. Experiments performed on NMOS and PMOS transistors demonstrate that TID effects can be mitigated by applying a dynamic back-bias technique.

Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and ModelingStanislav Popelka, Pavel Hazdra, Rupendra Sharma, Vit Zahlava, Jan Vobecky, Czech Technical University in Prague

Effect of neutron irradiation on commercial SiC JFET is presented and analyzed. Introduced defects were identified and their effect on JFET characteristics established. 2D model of irradiated JFETs was developed, calibrated and used for analysis.

Total Ionizing Dose Response of a 32 Nm RF Silicon-on-Insulator CMOS ProcessTim D. Haeffner, T. Daniel Loveless, Jeff S. Kauppila, En Xia Zhang, Sri Jagannathan, Michael L. Alles, Lloyd W. Massengill, Vanderbilt University

Total ionizing dose parametric degradation of DC and RF parameters is demonstrated for a commercial 32nm SOI CMOS process. S-parameters and I-V characteristics are compared to corresponding 45nm SOI CMOS devices.

18

PC-10

PC-11


SESSION D4:25 PM

D-14:30 PM

D-24:45 PM

Impact of Neutron-Induced Displacement Damage on the ATREE Response in LM124 Operational AmplifierFabien Roig, CEA and Université Montpellier 2; Laurent Dusseau, Aymeric Privat, Jean-Roch Vaillé, Jérôme Boch, Frédéric Saigné, Université Montpellier 2; Paul Ribeiro, Gérard Auriel, CEA; Nicolas J. H. Roche, Naval Research Laboratory and George Washington University; Ronan Marec, Philippe Calvel, Thales Alenia Space; Françoise Bezerra, Robert Ecoffet, Centre National d’Etudes Spatiales; Bruno Azais, Direction Générale de l’Armement

The synergistic effect between DD and ATREE in LM124 opamps from three different manufacturers is investigated for the first time. The ATREE responses impacted by fis-sion neutrons are modeled using a previously developed simulation tool.

Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator TechnologyFarzad MD. Inanlou, Nelson Lourenco, Zachary Fleetwood, Ickhyun Song, Duane Howard, Adilson Cardoso, John D. Cressler, Georgia Institute of Technology; En Xia Zhang, Cher Xuan Zhang, Vanderbilt University; Pauline Paki-Amouzou, Defense Threat Reduction Agency

We investigate, for the first time, total ionizing dose (TID) effects on a Gaussian pulse generator implemented in IBM’s new 90-nm SiGe BiCMOS platform, intended for high-altitude and space-based imaging radars.


SINGLE EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITSSeSSion inTroduCTionChair: Daniel Loveless, Vanderbilt University

Experimental Characterization and Simulation of Electron-Induced SEU in 45nm CMOS TechnologyAnne Samaras, Nicolas Sukhaseum, Pierre Pourrouquet, Lionel Gouyet, Benjamin Vandevelde, Nathalie Chatry, TRAD; Robert Ecoffet, Françoise Bezerra, Eric Lorfevre, CNES

This study presents the SEU characterization of the embedded FPGA SRAM using electron irradiation. Technological cross section, Monte Carlo simulation and irradia-tion test results using primary electron beam are described.

Validation of the Variable-Depth Bragg-Peak Method for Single-Event Latchup Testing Using Ion Beam CharacterizationStephen P. Buchner, Jeffrey H. Warner, Dale P. McMorrow, NRL; Nicolas J-H Roche, George Washington University; Michael P. King, Isaac K. Samsel, Nicholas C. Hooten, Wilson G. Bennett, Robert A. Weller, Marcus H. Mendenhall, Robert A. Reed, Vanderbilt University; Charles C. Foster, Foster Consulting Services, LLC; Patrick M. O’Neill, Brandon D. Reddell, NASA/JSC; Kai V. Nguyen, Jacobs Engineering

The Variable Depth Bragg Peak method has been investigated for single event latchup testing by comparing latchup cross-sections for heavy ions at low and high energies and by pulse height analysis.


19


D-35:00 PM

D-45:15 PM

D-55:30 PM

POSTER PAPERSPD-1

PD-2

PD-3

State and Angular Dependence of Single-Events Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench CapacitorsMichael L. Alles, Dennis R. Ball, Ronald D. Schrimpf, Lloyd W. Massengill, Vanderbilt University; Andrew T. Kelley, Nadim F. Haddad, John C. Rodgers, Jason F. Ross, Ernesto Chan, BAE Systems; Ashok Raman, Marek Turowski, CFDRC

A marked state dependence and reduced SEU cross section with increasing incident angle are attributable to the high aspect ratio of the deep trench capacitor employed for asymmetric hardening in a 90 nm CMOS SRAM.

The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM CapacitorsSlawosz Uznanski, Rubén Garcia Alia, Markus Brugger, Julien Mekki, Benjamin Todd, Andrea Vilar-Villanueva, CERN; Ewart Blackmore, Michael Trinczek, TRIUMF; Remi Gaillard, Consultant

Proton/heavy-ion experimental data are analyzed for a 16Mbit TFT PMOS SRAM with DRAM capacitors. The increase of the SEU proton cross-section for the energies above 100MeV is studied by Monte-Carlo simulations.

A Method and Case Study on Identifying Physically Adjacent Multi-Cell Upsets Using 28nm Interleaved and SECDED-Protected ArraysMichael Wirthlin, Brigham Young University; David Lee, Sandia National Laboratories; Gary Swift, Swift Engineering, Radiation Services, LLC; Heather Quinn, Los Alamos National Laboratory

As physical MCUs worsen with scaling, manufacturers use interleaving and ECC to keep logical MBUs from increasing. A case study using the first 28nm SEE dataset highlights this and that new test methodologies are required.

Radiation Performance of a Commercial Embedded ReRAMDakai Chen, Kenneth LaBel, NASA/GSFC; Hak Kim, Anthony Phan, Edward Wilcox, AS&D, Inc.; Stephen Buchner, Naval Research Laboratory

We show heavy ion test results of a commercial production-level ReRAM. The mem-ory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in the status register.

High and Low Energy Proton SEU in 32nm SOI SRAMsEthan Cannon, Manuel Cabanas-Holmen, Anothony Amort, The Boeing Company

We present high and low energy proton single event upset data on a 32nm SOI SRAM. Low energy testing shows a strong direct upset peak, and strong dependence on rota-tion angle above the Bragg peak.

Analysis of Hamming EDAC SRAMs Using Simplified Birthday StatisticsHans J. Tausch, JD Instruments; Helmut Puchner, Cypress Semiconductor

This paper develops a generalized equation relating random cell upsets to error rates in Hamming protected memory and shows how this equation can be used to better calculate upset cross-sections in heavy ion environments.

20

PD-4

PD-5

PD-6

PD-7

PD-8

PD-9

Efficient Dynamic Test Methods for COTS SRAMs under Heavy Ion IrradiationGeorgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Aida Todri, Arnaud Virazel, Laboratoire d’Informatique, de Robotique et de Microelectronique de Montpellier; Viyas Gupta, Laurent Dusseau, Frédéric Saigné, Institut d’Electronique du Sud; Helmut Puchner, Cypress Semiconductor; Alexandre Bosser, Arto Javanainen, Ari Virtanen, University of Jyväskylä; Frederic Wrobel, Institut d’Electronique du Sud and Institut Universitaire de France

We present novel methods for the dynamic mode radiation testing of SRAMs, based on different address accessing schemes: Fast Row, Fast Column and Pseudorandom. These methods are evaluated by heavy ion irradiation of two SRAMs.

Measurement of Alpha- and Neutron-Induced SEU and MCU on SOTB and Bulk 0 .4 V SRAMsRyo Harada, Soichi Hirokawa, Masanori Hashimoto, Osaka University

We present measurement results of alpha- and neutron-induced single event upsets and multiple cell upsets in 65 nm 0.4 V 6T SRAM on silicon on thin buried oxide (SOTB) and bulk devices.

A Study of Temperature Related SRAM Alpha SER SensitivityRamya Ramarapu, Richard Wong, Cisco Systems; Brett Clark, Honeywell; Tian-Jing Shen, GSI Technology

The alpha SER sensitivity of SRAM devices was shown to increase when tin close to the die was heated. A mechanism based on alpha emitter diffusion at moderate tem-peratures is proposed.

Evidence of the Robustness of a COTS Soft-Error Free SRAM to Neutron RadiationRaoul Velazco, Wassim Mansour, Maud Baylac, Solenne Rey, Olivier Rosetto, Francesca Villa, Université Grenoble Alpes & CNRS; Juan A Clemente, Carlos Palomar, Francisco J. Franco, Universidad Complutense de Madrid; Guillaume Hubert, ONERA

A COTS SRAM was tested in a 14-MeV neutron source to determine if, as claimed, it is soft-error free and determine upper bounds for the cross-section. MUSCA SEP3 simulations complement these results.

Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETsHiroaki Asai, Isamu Nashiyama, Kenji Sugimoto, Kensuke Shiba, Yuji Okazaki, Kenta Noguchi, Yasuo Sakaide, Tadaaki Morimura, HIREC

SEB tolerance of SiC power MOSFETs against terrestrial neutron is studied. It is shown that the failure probability increases exponentially with applied voltage and is several orders of magnitude lower than that of Si MOSFEET.

Sensitivity Factor Analysis of Single Event Function Failure for DC/DC Converters with Three Single Terminal Topological StructuresPengwei Li, Feipeng Du, Lei Luo, Wenyan Wang, Qingkui Yu, Ming Tang, Jie Liu, China Academy of Space Technology

Heavy ion radiation experiments have been done to DC/DC converters with three topological structures. Single event function failure test results were analyzed. Factors causing the failure of DC/DC converters have been pointed out.


21


PD-10

PD-11

PD-12

PD-13

PD-14

5:45 PM

Duplication with Comparison for High Performance Computing Applications on Graphics Processing UnitsDaniel A. G. Oliveira, Paolo Rech, Philippe O. A. Navaux, Luigi Carro, UFRGS; Christopher Frost, STFC

GPUs parallelism is attractive for duplications with comparison hardening. Threads should be carefully duplicated to avoid undesired errors on shared or critical resources. Various duplication strategies are analyzed and tested on a realistic HPC algorithm.

Reliability Evaluation of Embedded GPUs for Safety Critical ApplicationsDavide Sabena, Yiru Guo, Luca Sterpone, Politecnico di Torino; Luigi Carro, Paolo Rech, UFRGS - Universidade Federal do Rio Grande do Sul

Embedded GPUs must be qualified as reliable to be employed in safety-critical appli-cations. We analyze through neutron irradiation typical parallel algorithms for embed-ded GPUs and evaluate their reliability, focusing on caches and threads usage.

Laser Testing for Diagnosing SEU and SET in Virtex-5Fernanda Lima Kastensmidt, Lucas Tambara, UFRGS; Dmitry Bobrovsky, Alexander Pechenkin, Alexander Nikiforov, MEPHI

Laser testing is used to characterize SEE in Virtex5. SEU dependency to voltage sup-ply, cross-section, threshold energy and SET diagnose are observed by combining readback, bitstream comparisons and designs to capture SETs with laser.

On Delay Faults Affecting I/O Blocks of an SRAM-Based FPGA Due to Ionizing RadiationsFatima Zahra Tazi, Claude Thibeault, Simon Pichette, École de Technologie Supérieure; Yvon Savaria, Yves Audet, Polytechnique

Experimental means to characterize delay faults induced by bit flips and SEUs in I/O blocks of SRAM-based FPGAs are proposed. A delay fault of 6.2ns sensitized by an events chain is reported.

Towards a Realistic SEU Effects Emulation on SRAM Based FPGAsAnis Souari, Claude Thibeault, École de Technologie Supérieure; Yves Blaquière, Université du Québec à Montréal; Raoul Velazco, Université Grenoble Alpes, CNRS, TIMA

A novel fault-injection approach reproducing results issued from radiation ground test while studying SEU effects on SRAM-based FPGAs is presented. Its effectiveness is validated by comparing the obtained results with the radiation ones.

end oF TueSdAy SeSSionS

22

LA Seine A, B And CINVITED TALk

9:00 – 9:55 AMParis, a Beacon for the World?Olivier Chavaren, Licensed Guide for Paris and Its 150 Museums

With 28 million domestic and international visitors each year, Paris lures more tour-ists than any other city in the world. From its humble beginnings as the provincial town of Lutetia it has expanded into a world capital with global allure, fostered by its multi-thematic architecture, diverse museums, unique galleries, social cafés and bustling art scene.

Compared with other major global capitals, Paris remains densely populated with its 2,243,833 inhabitants living within an area of 66 square miles. Located on the River Seine, it benefits from an advantageous position on a seminal North-South exchange route. The intensity and the essence of its maturation relied heavily on the succession of defensive walls built from Antiquity until the 20th century interwar period.

Paris is the result of +2,000 years of history and bears the trace of each subsequent era. From the Middle Ages to the 19th C., royal heads and emperors constructed fortifications, royal residences, arches and fountains; they fostered the creation of churches and colleges and they spurred the creation of hospitals, markets, and schools. Francis I, Henry IV, Louis XIV, Napoléon Bonaparte and Napoléon III all played a central, critical role in adding their piece to the edifice, i.e. shaping Paris as a more bewitching city.

We’ll take our guests on a voyage of discovery of the city’s past, providing a chrono-logical account of how the events that unfolded in the capital intersected with the wider history of France. We’ll present the city key monuments and give you insights about what not to miss in the City of Light !

Olivier Chavaren, is a former instructor of French Language and Civilization, at George Mason University. He is now the President of I LOUVRE PARIS.com and President of COLORATOUR.com. Olivier is an officially Licensed National Tour Guide qualified for the Louvre, Orsay, Versailles and more. He loves passing on knowledge about Paris and beyond. He is a passionate tour guide who brings his love for arts, history, food and a good narrative to every tour. Olivier Chavaren is a dual citizen (French-US), born and raised in France and lived extensively across the pond ending up in DC.

Education:Ph.D , George Mason University, 2015National Conference Speaker Diploma in English & German, Cum Laude, University of Paris, 2011Master’s Degree, Magna Cum Laude, University of London, 2000

Technical Program Wednesday

23

SESSION E9:55 AM

E-110:00 AM

E-210:15 AM

E-310:30 AM

E-410:45 AM

E-511:00 AM

SINGLE EVENT EFFECTS: TRANSIENT CHARACTERIzATIONSeSSion inTroduCTionChair: Daisuke Kobayashi, ISAS/JAXA

On the Transient Response of Best-of-Breed Complementary (npn+pnp) SiGe HBT BiCMOS TechnologyNelson E. Lourenco, Zachary E. Fleetwood, Partha S. Chakraborty, Troy D. England, Adilson S. Cardoso, Seungwoo Jung, Georgia Institute of Technology; Nicolas J-H. Roche, Naval Research Laboratory, and George Washington University; Ani Khachatrian, Naval Research Laboratory, and Sotera Defense; Dale McMorrow, Stephen P. Buchner, Joseph S. Melinger, Jeffrey H. Warner, Naval Research Laboratory; Pauline Paki-Amouzou, Defense Threat Reduction Agency; Mehmet Kaynak, Bernd Tillack, Dieter Knoll, IHP Microelectronics; John D. Cressler, Georgia Institute of Technology

The SET response of a third-generation bulk C-SiGe (npn + pnp) BiCMOS platform is investigated for the first time. TCAD simulations are used to understand the experi-mental results and ascertain the intrinsic transient mechanisms.

Charge Collection and Enhancement Mechanisms in p-InGaSb Heterojunction Field-Effect Transistors Probed with Pulsed Laser ExcitationJeffrey H. Warner, Dale McMorrow, Stephen Buchner, Cory Cress, James G. Champlain, J. Brad Boos, Brian R. Bennett, Naval Research Laboratory; Nicolas J.-H. Roche, The George Washington University

Laser-induced, charge-collection measurements for p-InGaSb/AlGaSb Heterojunction FETs are reported. These measurements demonstrate the presence of a charge enhancement process. Further insights are gained into the mechanism responsible for enhanced charge collection.

Comparison of Single Event Transients Generated by Short Pulsed x-Rays, Lasers and Heavy IonsStephen D. LaLumondiere, David M. Cardoza, Nathan P. Wells, Michael A. Tockstein, Rocky Koga, William T. Lotshaw, Kevin M. Gaab, Steven C. Moss, The Aerospace Corporation

We correlate Single Event Effect test results using pulsed x-rays, pulsed laser excita-tion, and heavy ions for simple photodiode structures. We also investigate shape of the signal transients observed for the different test modalities.

Quantification of Single-Event Harmonic Errors in Digitally Controlled Ring OscillatorsYanran Paula Chen, T. Daniel Loveless, Pierre Maillard, Nelson J. Gaspard, Arthur F. Witulski, Bharat L. Bhuva, W. Timothy Holman, Lloyd W. Massengill, Vanderbilt University

Single-event harmonic errors have been observed in digitally controlled ring oscilla-tors. Experimental, simulation, and modeling results are used to elucidate the funda-mental requirements for a sustained harmonic response.

Single Event Transients in 32 nm SOI Stacked LatchesKenneth P. Rodbell, Kevin G. Stawiasz, Michael S. Gordon, Phil Oldiges, Keunwoo Kim, Conal E. Murray, John G. Massey, Larry Wissel, Henry H. K. Tang, IBM

Single event transient (SET) experimental data for Silicon-on- Insulator (SOI), 32 nm stacked latches are presented. Stacked latches are insensitive to SET pulse propaga-tion through a floating point multiplier unit with low LET ions.


24

POSTER PAPERSPE-1

PE-2

PE-3

PE-4

PE-5

New Techniques for SET Sensitivity and Propagation Measurement in Flash-Based FPGAsAdrian Evans, Dan Alexandrescu, IROC Technologies; Véronique Ferlet-Cavrois, ESA/ESTEC; Michael Nicolaidis, TIMA Laboratory

A calibrated circuit for on-chip measurement of Single Event Transients with tem-poral precision better than one gate delay is described. Heavy-ion test results for ProASIC3L FPGAs with simple and complex circuits are reported.

Analyzing Single Event Effects on Microprocessor Cores Implemented on Flash-Based FPGAsLuca Sterpone, Boyang Du, Politecnico di Torino; Véronique Ferlet-Cavrois, David Merodio-Codinachs, Christian Poivey, ESA/ESTEC

Heavy-ion experiments are executed to characterize different mitigation techniques applied to a RISC microprocessor implemented on Flash-based FPGAs. Experimental results demonstrated that SET-aware placement achieves better SEE sensitivity versus traditional mitigation approaches.

Single Event Transient Analyses Based on Experiments and Multi-Physics Modeling Applied to the Hardened ATMEL CMOS 180 and 90-Nm LibrariesGuillaume Hubert, Laurent Artola, ONERA; Truyen David, Michel Briet, Chantha Heng, Yahya Lakys, Eric Leduc, ATMEL

This work describes test structures and modeling that have been applied to character-ize SET pulse widths of hardened ATMEL CMOS libraries in 180 and 90nm technolo-gies. Analyses correlate experiments and calculations based on MUSCA SEP3.

Heavy Ion and Laser Induced Charge Collection in SiGe Bulk PMOSFETsEn Xia Zhang, Isaak K. Samsel, Nicholas C. Hooten, William G Bennett, Erik D. Funkhouser, Michael W. McCurdy, Daniel M. Fleetwood, Robert A. Reed, Michael L. Alles, Ronald D. Schrimpf, Vanderbilt University; Dimtri Linten, Jerome Mitard, IMEC

Heavy-ion and two-photon-absorption laser data on SiGe pMOSFETs show that both the single-event-transient pulse magnitude and polarity can depend strongly on the location of the strike along the device channel.

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror CircuitsSeungwoo Jung, Nelson E. Lourenco, Ickhyun Song, Michael A. Oakley, Troy D. England, Rajan Arora, Adilson Cardoso, John D. Cressler, Georgia Institute of Technology; Nicolas J.-H. Roche, Ani Khachatrian, Dale McMorrow, Stephen P. Buchner, Joseph S. Melinger, Jeffrey H. Warner, Pauline Paki-Amouzou, Defense Threat Reduction Agency; Jeff A Babcock, Texas Instruments

We investigate single-event transients in C-SiGe (npn+pnp) HBT on SOI current mir-ror circuits.


25

PE-6

PE-7


SESSION F11:40 AM

F-111:45 AM

F-212:00 PM

A Model for Transient Radiation Effects in pHEMTVadim V. Elesin, Galina N. Nazarova, George V. Chukov, Konstantin M. Amburkin, Alexander Y. Nikiforov, Dmitry V. Gromov, National Research Nuclear University

The experimental and modeling results of transient radiation effects in pseudo-morphic HEMT are presented. The physical model is proposed, which adequately describes dose rate effects in field effect transistors designated for microwave mono-lithic integrated circuits.

The Role of Feedback Resistors and TID Effects in the ASET Response of a High Speed Current Feedback AmplifierFabien Roig, Paul Ribeiro, Gérard Auriel, CEA; Laurent Dusseau, Aymeric Privat, Jean-Roch Vaillé, Jérôme Boch, Frédéric Saigné, Université Montpellier 2; Nicolas J.H. Roche, Naval Research Laboratory (NRL) and George Washington University (GWU); Ronan Marec, Philippe Calvel, Thales Alenia Space (TAS); Françoise Bezerra, Robert Ecoffet, Centre National d’Etudes Spatiales (CNES); Bruno Azais, Direction Générale de l’Armement (DGA)

The impact of TID on ASET shapes in high speed current feedback amplifier is inves-tigated for different feedback transistors. TID and laser experiments are conducted, demonstrating that resistors and TID modify the size of transients.


HARDENING By DESIGNSeSSion inTroduCTionChair: Gilles Gasiot, STMicroelectronics

Single Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in 90 Nm SiGe BiCMOS TechnologyAdilson Silva Cardoso, Partha S. Chakraborty, Nelson E. Lourenco, David M. Fleischhauer, Zachary E. Fleetwood, Troy D. England, Georgia Institute of Technology; Laleh Najafizadeh, Rutgers University; Nicolas J. Roche, Jeffrey H. Warner, Dale McMorrow, Stephen P. Buchner, Naval Research Laboratory; En Xia Zhang, Cher Xuan Zhang, Robert A. Reed, Daniel M. Fleetwood, Vanderbilt University; Pauline Paki-Amouzou, Defense Threat Reduction Agency

Single event transient and total dose response of precision voltage reference circuits designed in a 4th generation, 90 nm SiGe BiCMOS technology are investigated, and new circuit-level radiation hardening design techniques are presented.

Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTsIckhyun Song, Seungwoo Jung, Nelson E. Lourenco, Zachary E. Fleetwood, Tikurete B. Gebremariam, Farzad Inanlou, John D. Cressler, Georgia Institute of Technology; Nicolas J.H. Roche, Naval Research Laboratory and George Washington University; Ani Khachatrian, Naval Research Laboratory and Sotera Defense Solutions; Dale McMorrow, Stephen P. Buchner, Joseph S. Melinger, Jeffrey H. Warner, Naval Research Laboratory; Pauline Paki-Amouzou, Defense Threat Reduction Agency

An SET-hardened RF LNA was designed using inverse-mode SiGe HBTs to dem-onstrate its potential in space-based RF applications. Two-photon absorption laser experiments and TCAD simulations are used to validate the approach.


26


F-312:15 PM

F-412:30 PM

F-512:45 PM

POSTER PAPERSPF-1

PF-2

PF-3

Mitigation of Total Dose Performance Degradation in an 8-18 GHz SiGe Reconfigurable RF ReceiverDuane C. Howard, Troy D. England, Adilson S. Cardoso, Prabir K. Saha, Subramaniam Shankar, Ryan M. Diestelhorst, Zachary E. Fleetwood, Nelson E. Lourenco, Georgia Institute of Technology; En Xia Zhang, Cher Xuan Zhang, Vanderbilt University; Pauline Paki-Amouzou, Defense Threat Reduction Agency

The total dose response and efficacy of an on-chip reconfigurable 8-18 GHz SiGe RF receiver system for mitigating total dose RF performance loss are investigated for potential use in robust space-based applications.

A New Hybrid Non-Intrusive Error-Detection Technique Using Dual Control-Flow MonitoringLuis Parra, Almudena Lindoso, Marta Portela-Garcia, Luis Entrena, University Carlos III; Matteo Sonza-Reorda, Boyang Du, Luca Sterpone, Politecnico di Torino

A hybrid technique that compares input and output instructions in a processor is pro-posed. No software modification is required to detect control-flow errors. Fault injec-tion results with LEON3 show full control-flow error detection.

On the Structural Robustness Assessment of Wireless Communication Systems for Intra-Satellite ApplicationsHipolito Guzman-Miranda, Javier Barrientos-Rojas, Patricio Lopez-Gonzalez, Vicente Baena, Miguel A. Aguirre, Universidad de Sevilla

The present work explores how to exploit the self-correcting features that transmitter-receiver systems have for correcting channel-induced errors, in order to design a radi-ation-tolerant wireless communications system for intra-satellite communication.

EReLA: a Low-Power Reliable Coarse-Grained Reconfigurable Architecture Processor and Its Irradiation TestsJun Yao, Mitsutoshi Saito, Yasuhiko Nakashima, Nara Institute of Science and Technology; Shogo Okada, Kazutoshi Kobayashi, Kyoto Institute of Technology

A reconfigurable processor is proposed to selectively apply a programmable redun-dancy, either partial or full DMR, instead of device hardening. Power and reliability can be balanced. Stress radiation tests were performed to verify these concepts.

Lightweight DMR for SEE Hardening in Low Power Embedded SystemsRonaldo R. Ferreira, Jean da Rolt, Gabriel L. Nazar, Alvaro F. Moreira, Luigi Carro, UFRGS - Universidade Federal do Rio Grande do Sul

We present a novel DMR hardening-by-design approach for embedded systems that does not require register file duplication, leading to error recovery with low power dissipation and considerably lower area overhead than standard DMR.

A Single-Event-Tolerant Ring Oscillator Phase-Locked Loop in 130 Nm CMOSYang You, Southern Methodist University; Deping Huang, Jinghong Chen, University of Arizona

This paper presents a phase-locked loop designed in 130 nm CMOS by using radia-tion-hardened-by-design techniques. The PLL achieves 4X less SET-induced voltage perturbation as well as a faster recovery.

27


PF-4

PF-5

PF-6

PF-7

PF-8

PF-9

Radiation Hardened Design and Analysis for Spin Transfer Torque Random Access MemoryDjaafar Chabi, Weisheng Zhao, Jacques Olivier Klein, Claude Chappert, Universit Paris Sud

Conventional STT-MRAM is unsuitable for radhard applications due to CMOS peripheral circuits and its intrinsic stochastic switching. This paper analyzes the radia-tion impact on STT-MRAM and presents a radhard design for SEU mitigation.

A Rad-Hard 1 Mbit S-Flash OTP Memory for SpaceCristiano Calligaro, RedCat Devices; Julio Georgiou, University of Cyprus; Faustino Gomez Rodriguez, University of Santiago de Compostela; Valentino Liberali, University of Milano; Daniel Nahmad, Tower-Jazz; Alessandro Paccagnella, University of Padova; Alexander V. Prokofiev, Uppsala University; Ari Virtanen, University of Jyvaskyla

An OTP non-volatile flash memory was designed for space applications, in a standard 180 nm CMOS technology using RHBD techniques. Prototype characterization dem-onstrates immunity to latch-up and TID tolerance up to 125 krad.

A MGy Radiation-Hardened Sensor Instrumentation SoC in 65nm CMOS TechnologyJens Verbeeck, Ying Cao, Michiel Steyaert, Paul Leroux, KU Leuven; Marco Van Uffelen, Laura Mont Casellas, Carlo Damiani, Fusion for Energy; Richard Meek, Bernhard Haist, Oxford Technologies Ltd.

A radiation-hardened sensor instrumentation SoC is presented in this paper. The SoC is implemented in a standard 65nm CMOS technology, and achieves MGy-level TID radiation hardness through radiation-hardening-by-design.

Evaluating the Robustness of TMR Schemes with Different Levels of Granularity in SRAM-Based FPGAs under Neutron-Induced EffectsLucas A. Tambara, Felipe Almeida, Paolo Rech, Fernanda L. Kastensmidt, Universidade Federal do Rio Grande do Sul; Giovanni Bruni, Universita degli Studi di Padova; Christopher Frost, Rutherford Appleton Laboratory; Heather Quinn, Los Alamos National Laboratory

Single Event Upsets caused by neutrons in several TMR schemes with different levels of granularity are evaluated in an SRAM-based FPGA. Results are shown in terms of Cross Section and Number of Accumulated Upsets.

Soft Error Mitigation Using Transmission Gate with Varying Gate and Body BiasSelahattin Sayil, Mohammad A. Islam, Bo Sun, Lamar University

This work proposes a new transmission-gate based technique for filtering SE Transients. The gate voltages of individual pass transistors as well as body bias can be adjusted for filtering varying SE transient widths.

An Innovative SEU Hardened CMOS LatchTianwen Li, Haigang Yang, Gang Cai, Tian Zhi, Yue Li, Chinese Academy of Sciences

This paper describes an innovative SEU hardened CMOS latch. The cost comparison with other hardened latches and radiation test results are also given in this paper. With sufficient SEU immunity, it suits high reliability applications.

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Power-Aware Mitigation of Combinational Logic Single Event EffectsNihaar N. Mahatme, Thiago Assis, Nelson J. Gaspard, T. Daniel Loveless, Bharat L. Bhuva, William H. Robinson, Lloyd W. Massengill, Vanderbilt University; Shi J. Wen, Richard Wong, CISCO Systems Inc.

A power-aware technique to minimize combinational logic soft error rate (SER) is pro-posed. Alpha particle logic SER of 20-nm circuits reduces by 7X and power consump-tion reduces by 41% compared to the baseline.

Optimizing Well-Configuration for Minimizing Single Event LatchupTaiki Uemura, Kato Takashi, Ryo Tanabe, Hiroshi Iwata, Junichi Ariyoshi, Hideya Matsuyama, Fujitsu Semiconductor; Masanori Hashimoto, Osaka University

We investigate well configuration for minimizing single event latchup without design modification. Single event latchup and upset rates were evaluated through neutron irradiation test on SRAM with various well configurations.


PHOTONIC DEVICES AND INTEGRATED CIRCUITSSeSSion inTroduCTionChair: Scott Messenger, University of Maryland, Baltimore County

Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image SensorsVincent Goiffon, Magali Estribeau, Paola Cervantes, Romain Molina, Pierre Magnan, ISAE, Universite de Toulouse

Total Ionizing Dose effects are investigated in Pinned Photodiode CMOS Image Sensors by comparing the radiation responses of several Transfer Gate designs. This comparison brings new insights into the degradation mechanisms.

Influence of O2 Loading Pre-Treatment on the Radiation Responses of Pure and Fluorine Doped Silica-Based Optical FibersDiego Di Francesca, Université Jean Monnet St Etienne and Università degli Studi di Palermo; Simonpietro Agnello, Franco Mario Gelardi, Università degli Studi di Palermo; Sylvain Girard, Université Jean Monnet St Etienne; Claude Marcandella, Philippe Paillet, CEA, DAM, DIF; Aziz Boukenter, Youcef Ouerdane, Université Jean Monnet St Etienne

We investigate the combined effects of high oxygen loading and high irradiation dose (up to 1 MGy) on the radiation response of fluorine-doped and pure silica core optical fibers in the UV-visible range.


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POSTER PAPERSPG-1

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Proton Irradiation Response of Hole-Assisted Carbon Coated Erbium-Doped Fiber AmplifiersSylvain Girard, Diego Di Francesca, Aziz Boukenter, Youcef Ouerdane, Universite de Saint-Etienne; Arnaud Laurent, Emmanuel Pinsard, Thierry Robin, Benoit Cadier, iXFiber; Melanie Raine, Philippe Paillet, Marc Gaillardin, Oliver Duhamel, Claude Marcandella, CEA; Mathieu Boutillier, CNES

We investigated 63MeV proton irradiation response of EDFAs based on a new fiber structure that improves their hardness with a limited gain decrease of 0.6 dB from 27dB after equivalent irradiation dose of 100krad.

Development of a Temperature Distributed Monitoring System Based on Raman Scattering in Harsh EnvironmentChiara Cangialosi, Youcef Ouerdane, Sylvan Girard, Aziz Boukenter, Universite Jean Monet de Saint Etienne and Universit degli studi di Palermo; Sylvie Delepine-Lesoille, Johanne Bertrand, National Radioactive Waste Management Agency; Claude Marcandella, Philippe Paillet, CEA, DAM, DIF; Marco Cannas, Universita degli Studi di Palermo

Hydrogen and gamma-rays effects on Raman Distributed Temperature Sensors were investigated to monitoring nuclear wastes deep geological repository. A hardening by system procedure is described to correct measurements from errors related to this environment.

Image Sensors DCNU Modeling with GEANT4Christophe Inguimbert, Thierry Nuns, Didier Falguère, Dylan Furic, ONERA; Dominique Hervé, Mathieu Beaumel, SODERN

An original prediction method has been developed with the 3D Monte Carlo transport code GEANT4 to simulate Dark Current Non Uniformity (DCNU) of image sensors. Comparisons with experimental data are shown.

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image SensorsCedric Virmontois, Guy Rolland, Alain Bardoux, Catalin Codreanu, CNES; Arthur Toulemont, Airbus Defence and Space (formerly at CNES); Valérian Lalucaa, Vincent Goiffon, ISAE, Université de Toulouse

This paper focuses on the radiation-induced dose and single event effect in digital CMOS image sensors using pinned photodiode.

Low Temperature Total Dose Irradiation of Transistors for Infrared ApplicationsThierry Nuns, Jean-Pierre David, Sabine Soonckindt, ONERA; Olivier Gilard, CNES; Franck Perrier, Samuel Ducret, SOFRADIR

Silicon transistor test vehicles used in Infrared detectors were exposed to total dose at cryogenic temperatures. We present the degradation of the leakage current and thresh-old voltage of different transistor topologies and different dose rates.


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RADIATION EFFECTSDATA WORkSHOP

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Effects of Gamma Radiation on Fiber Bragg Gratings by Variation of Grating Fabrication ParametersJong Yeol Kim, Nam Ho Lee, Hyun Kyu Jung, Korea Atomic Energy Research Institute (KAERI)

We studied the effect of Co60 gamma-radiation on the FBGs by variation of grating fabrication parameters. The FBGs were fabricated in different process using the same commercial Ge-doped fiber.

Transient Noise of MCT Detector Array due to High Energy Particles: Tests and SimulationsWousik Kim, Carl F. Bruce, Shawn S. Kang, Farokh Irom, Dennis O. Thorbourn, JPL

The transient noises on an MCT detector induced by 200 MeV protons and 0.6 - 1 MeV electrons are tested. The test results are compared with Monte Carlo simulations using MCNPX and Geant4.

Displacement Damage in the Optocoupler Output Transistor: Contribution to a Screening MethodAminata M. J. F. Carvalho, Christian Binois, Laurent Toudret, Renaud Mangeret, Airbus Defence and Space; Véronique Ferlet-Cavrois, ESA/ESTEC

60 MeV proton induced displacement damage in the phototransistor of three different optocouplers is studied. A prior irradiation screening method of the phototransistor is proposed, based on the characterization of the phototransistor fall-time.

inTroduCTion

Chairs: Farok Irom, Jet Propulsion Lab, and Stefan Metzger, Fraunhofer Institute

Guide to the 2013 IEEE Radiation Effects Data Workshop RecordDavid M. Hiemstra, MDA

The 2013 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.


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Single Event Upset Characterization of the kintex-7 Field Programmable Gate Array Using ProtonDavid M. Hiemstra, Valeri Kirischian, MDA

Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Kintex-7 FPGA are presented. Upset rates in the space radiation environment are estimated.

Single-Event Characterization of the 28 nm xilinx kintex-7 Field-Programmable Gate Array under Heavy-Ion IrradiationDavid S. Lee, Sandia National Laboratories; Michael Wirthlin, Brigham Young University; Gary Swift, Swift Engineering and Radiation Services, LLC; Anthony Le, Boeing Corporation

The single-event response of the 28 nm Kintex-7 FPGA irradiated with heavy ions was measured. Results for single-event upset, including multi-cell upset, and for single-event latch-up are presented.

Total Ionizing Dose Characterization of 65 Nm Flash-Based FPGANadia Rezzak, Jih-Jong Wang, Chang-Kai Huang, Victor Nguyen, Gregory Bakker, Microsemi

New 65 nm flash-based field programmable gate array with system-on-chip capability is introduced. Device’s total ionizing dose effects are characterized. TID test results of CMOS Flash-based FPGAs are presented.

Single-Event Effects in Low-Cost, Low-Power MicroprocessorsHeather Quinn, Tom Fairbanks, Tripp Justin, Duran George, Lopez Beatrice, LANL

ARMs and Microcontrollers are low-cost, low-power microprocessors that are simpler than traditional microprocessors. In this abstract we present results from radiation testing several available ARMs and Microcontrollers.

SEE Results of a Next Generation LEON 3FT MicroprocessorCraig Hafer, Brian Baranski, Gwen Butler, James Nagy, Steve Griffith, Anthony Jordan, Aeroflex Colorado Springs; Steven M. Guertin, NASA-JPL/Caltech

Special SEU test software is used to monitor the SEUs corrected by fault tolerant cir-cuitry in the internal SRAM of the LEON 3FT processor. SEL immunity, SEU, and TID results are reviewed.

Radiation Effects Characterization of a High Density SSRAMCraig Hafer, Jon Mabra, Chris Mnich, Mike Leslie, Anthony Jordan, Aeroflex Colorado Springs

A high density 64/80/96-Mbit SSRAM has been designed/characterized for radiation effects. The device is SEL immune and has a SER less than 1x10-15 errors/bit-day. TID = 100 krad(Si).

SEE Test Results for P2020 and P5020 Freescale ProcessorsSteven M. Guertin, Mehran Amrbar, Jet Propulsion Laboratory

Freescale processors are tested for heavy ion and proton SEE. Focus is on sensitivity of low-level targets such as SRAM. Effectiveness of specialty algorithms for error detect is studied.


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Neutron Induced Single Event Upset (SEU) Testing of Static Random Access Memory (SRAM) DevicesMichael J. Tostanoski, Terrence F. Deaton, Roy E. Strayer, Jr., Rudolf Goldflam, Aeroflex RAD, Inc.; Travis Z. Fullem, Bechtel Marine Propulsion Corporation

Results of neutron induced single event upset (SEU) testing of three devices: the Galvantech GVT71128G36, the GSI GS816273CC, and the internal RAM in the TI SM32C6713BGDPA20EP DSP are described.

Accelerator-Based Neutron Irradiation of Integrated Circuits at GENEPI-2 (France)Maud Baylac, Solenne Rey, Olivier Rossetto, Francesca Villa, LPSC Grenoble; Wassim Mansour, Pablo Ramos, Raoul Velazco, TIMA; Guillaume Hubert, ONERA

Newly available for integrated circuits irradiation, GENEPI-2 is an accelerator facility providing 3-MeV or 15-MeV neutrons, located in Grenoble (France). Radiation tests of an SRAM memory showed results compatible with other facilities.

Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 NmJean-Luc Autran, Daniela Munteanu, Sébastien Sauze, Aix-Marseille University; Gilles Gasiot, Philippe Roche, STMicroelectronics

We present a survey of real-time testing results accumulated from 2006 in altitude (ASTEP platform) and underground (Modane Laboratory). Radiation data concern three generations of SRAMs manufactured in CMOS 130, 65 and 40 nm.

Experimental Investigation of Single-Event Upset Induced by Low-Energy Proton on Commercial 65nm Bulk CMOS SRAMGang Guo, Anlin He, Dongjun Shen, China Institute of Atomic Energy; Li Chen, University of Saskatchewan

Proton-induced SEU has been carried out on commercial 65 nm Bulk CMOS SRAM. The results show that cross-section caused by direct ionization is about 2 magnitude orders higher than that by nuclear reaction.

Charged Particle Induced Degradation of Trench Type N-Channel Power MOSFETsRocky Koga, The Aerospace Corp.

Radiation sensitivity to protons and heavy ions is observed with trench n-channel power MOSFETs. Degradations due to SEGR/SEB as well as particle induced micro-dose effects are presented with comparisons to Co60 TID effects.

Recent Lateral and Trench Power MOSFET and Gallium Nitride HEMT Single Event Testing ResultsLeif Z. Scheick, JPL/CIT

The results of recent Single Event Effect (SEE) testing of newly available power MOSFETs and GaN HEMTs are presented.


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Single Event Effects in Power MOSFETs and IGBTs Due to NeutronsDamien Lambert, Francois Desnoyers, Didier Thouvenot, Nucletudes; Bruno Azais, DGA

Single Event Effect (SEE) characterizations under 14 MeV and 25 meV neutrons are presented for various commercial power electronic components: power metal-oxide-semiconductor field effect transistors (MOSFET) and insulated gate bipolar transistors (IGBT).

Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETsAlex Lidow, Johan Strydom, Efficient Power Conversion; Matt Rearwin, Max Zafrani, Microsemi Corporation

This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB immunity when LET is 85 MeV/(mg/cm2).

Terrestrial Neutron Induced Failure in Silicon Carbide Power MOSFETsRichard T. Wilkins, Kazi Rashed, Ramesh Dwivedi, Brad Gersey, Prairie View A&M University; Akin Akturk, CoolCAD Electronics LLC

The first observation of neutron induced single event catastrophic failures in silicon carbide power MOSFETs is reported. These failures were observed for drain to source biases of greater than 800V for 1200V power MOSFETs.

Single Event Effects Characterization of the ADC12D1600CCMLS, 12 Bit, 3 .2 GSPS Analog-to-Digital Converter with Static and Dynamic Inputs and Different Ion EnergiesKirby Kruckmeyer, Thang Trinh, Texas Instruments

Texas Instruments’ 12 bit, gigasample ADC was put through heavy ion testing, using different beam energies and range penetrations and with dynamic and static inputs. The results of the different test conditions are compared.

ELDRS Characterization of Texas Instruments LM185, 1 .2V Precision Reference: Retrograde Behavior Demonstrates Why Taking Interim Test Points Is ImportantKirby Kruckmeyer, Thang Trimh, Texas Instruments

The LM185 reference voltage degraded through total ionizing dose radiation, but began to recover at around 100 krad. The recovery curve was different for high and low dose rates and biased and unbiased test conditions.

Total Dose and Single Event Effects Testing of the Intersil ISL71090SEH and ISL71091SEH Precision Voltage ReferencesNick W. van Vonno, Brian Williams, Dave Turner, Eric J. Thomson, Kiran Bernard, Intersil

We report the results of SEE and low and high dose rate total dose testing of the Intersil ISL71090SEH and ISL71091SEH hardened voltage references together with a discussion of electrical specifications and fabrication process.


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Displacement Damage Testing Results for Intersil Bipolar and BiCMOS Analog PartsNick W. van Vonno, Paul W. Traynham, Frank C. Ballou, Jim S. Gill, Intersil; Jon E. Shick, Honeywell

We summarize the results of 1MeV neutron displacement damage (DD) testing of sev-eral Intersil bipolar and BiCMOS analog and power management functions, including operational amplifiers, references, comparators, temperature sensors and point of load regulators.

Total Dose Radiation Effects on COTS Array CCDs at Low Dose RateZujun Wang, Northwest Institute of Nuclear Technology

Radiation experiments of CCDs at low dose rates of 0.01 and 0.03 rad(Si)/s are pre-sented. Saturation output signal voltage, dark signal slope, and fixed pattern noise versus total dose are presented.

Radiation Performance of Interline CCD ArraysDennis A. Thompson, Bryan C. Fodness, Paul P. Lee, Exelis Geospatial Systems

Commercially fabricated Interline CCDs were Total Ionizing Dose (TID) tested with gamma and proton radiation. Device performance degradations are presented and a method for synthesizing the on-orbit exposures, facilitating on-orbit performance pre-dictions.

Design and Radiation Hardness of Next-Generation Solar UV RadiometersSamuel Gissot, Ali BenMoussa, Boris Giordanengo, Royal Observatory of Belgium

To build next generation space-based solar UV radiometers, we assess the degradation effects of proton irradiation on innovative wide bandgap photodetectors, UV filters, and calibration UV-LEDs.

Floating Gate P-MOS Radiation Sensor Charging Cycles CharacterizationJoan Cesari, Daniel Gomez, Alvaro Pineda, Integrated Circuits Malaga S.L.; Miquel Roca, Eugeni Isern, Eugeni Garcia, Universitat Illes Balears

A recharging cycles characterization of a floating Gate P-MOS radiation sensor is pre-sented. The radiation sensor has been tested emulating the radiation environment in order to discharge the floating gate.

Radiation Effects in Thermal Image Sensors for Earth Observation MissionsLuis Gomez Rojas, Tom Clatworthy, Mark Skipper, Mark Chang, Surrey Satellite Technology Ltd; Nick Nelms, Abelardo Perez Albinana, European Space Agency

Cobalt60 and heavy ion irradiations of the ULIS 03041 thermal infrared image sensor were performed to assess its reliability during ESA’s EarthCARE mission. Devices were tested up to 10krad(Si) and 40MeV LET.

TID and SEE Responses of Rad-Hardened Votage ReferencesGeraldine Chaumont, Benoit Cornanguer, STMicroelectronics; Florence Malou, CNES

We present Single Event Effects characterization and Total Ionizing Dose behaviour up to 300 krad(Si) on Rad-Hardened Voltage References.

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TID and SEE Characterization of Rad-Hardened 1 .2GHz PLL IP from New ST CMOS 65nm Space TechnologyFlorence Malou, CNES; Gilles Gasiot, Remy Chevallier, Laurent Dugoujon, Philippe Roche, STMicroelectronics

We present Single Event Effects characterization and Total Ionizing Dose behavior up to 300 krad(Si) on Rad-Hardened 1.2GHz PLL IP and cold-spare I/O from new ST CMOS 65nm space technology.

The Behavior of SEE Sensitivity at Various TID LevelsAlexander A. Novikov, Alexander A. Pechenkin, Alexander I. Chumakov, NRNU MEPhI and Specialized Electronic Systems

SEU, SEL and SET sensitivity estimation results using laser technique in dependency of TID effects are presented and discussed.

A Total Dose Dataset for Vertical NPN Bipolar TransistorsDennis A. Adams, Herb A. Barnes, Cory E. Sherman, Norman P. Goldstein, Northrop Grumman Corporation; Craig Stodart, International Rectifier

Total Ionized Dose (TID) study was performed on vertical NPN bipolar transistors used in radiation hardened 10 V and 40 Volt BiCMOS processing technologies for 300 krad(Si) space applications.

Total Ionizing Dose Effects on Commercial Electronics for Cube Sats in Low Earth OrbitsRichard Netzer, Keith Avery, Air Force Research Laboratory; William Kemp, LEIDOS; Alonzo Vera, Brian Zufelt, David Alexander, COSMIAC

Modest total dose in low earth orbit and short cube sat missions provide an opportu-nity for using commercial electronics. We present the results of high and low dose rate testing of candidate commercial microcircuits.

TID Response of a Hybrid AMR Vector MagnetometerBarry J. Whiteside, Patrick Brown, Trevor J. Beek, Tim M. Oddy, Tim S. Horbury, Chris M. Carr, Imperial College London

We present TID response up to 100 kRad(Si), of the three-axis vector magnetoresistive hybrid MAGIC, a low resource magnetoresistive sensor integrated with a H-bridge drive on a co-fired ceramic chip.

Effects of G-Ray Radiation on Magnetic Properties of NdFeB and SmCO Permanent Magnets for Space ApplicationsJose Luis Mesa, Ana Belen Fernandez, Carlos Hernando, María Teresa Álvarez, Marína Díaz Michelena, Instituto Nacional de Técnica Aeroespacial; Michael E McHenry, Carnegie Mellon University; Claudio Aroca, Universidad Politécnica de Madrid

NeFeB and SmCo permanent magnets have been irradiated up to three different total doses. Magnetic properties have been measured at different temperatures before and after irradiation, comparing its radiation resistance and suitability for space applications.

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Commercial Emitting Diodes Sensitivity to Protons RadiationsMathieu Boutillier, Olivier Gilard, Gianandrea Quadri, CNES; Sébastien Lhuillier, Lip Sun How, Adveotec; Stephan Hernandez, ESA

In this study, we report on 50MeV protons radiations damages on Europeans manu-factured commercial light emitting diodes. The main objective is to assess the potenti-ality of such devices for space applications.

FEAST: a Radiation and Magnetic Field Tolerant Point-of-Load Buck DCDC ConverterFederico Faccio, Georges Blanchot, Stefano Michelis, Isaac Troyano, Cristian Fuentes, Stefano Orlandi, CERN; Stefano Saggini, Udine University

CERN has developed a 10W POL buck DCDC converter for application in a radiation and magnetic field environment. Electrical characterisation, as well as radiation data for TID, displacement damage and SEEs are presented.

Radiation Tolerance Assessment of Commercial zigBee Wireless ModulesRania I. Gomaa, Nuclear & Radiological Regulatory Authority; Ihab Adly, British University in Egypt; Ahmed Safwat, National center for radiation Research and Technology; Karam A. Sharsher, Azhar University; Hani F. Ragai, Ain Shams University

WSN deployment for monitoring nuclear environment has recently addressed as incremental and experimental networks. The work objective is to determine dose tol-erance of commercially wireless Zigbee modules in nuclear embedded applications, with gamma irradiation fluxes.

Characterization and Analyses of RadHard-by-Design CMOS Open Drain Quad ComparatorsRay Benson, Paul Resch, Aeroflex, Inc.; Randall Milanowski, Milanowski & Associates, Inc.

We present Total Ionizing Dose and Single Event Effects characterization and analy-ses of CMOS open drain comparators implemented using RHBD design and layout techniques. Results confirm high TID tolerance, SEL immunity, and favorable SET response.

Compendium of Ball Aerospace TID, DDD, and SEE Test RestsRichard D Horton, Timothy R Oldham, Ball Aerospace & Technology Center; Rocky Koga, Aerospace Corp.

We have conducted TID, DDD, and SEE tests on a variety of parts intended for appli-cation in different Ball Aerospace Systems. Results and discussion are presented.

Radiation Test Results on COTS and Non-COTS Electronic Devices for NASA Johnson Space Center Spaceflight ProjectsKyson V. Nguyen, Patrick M. O’Neill, Brandon D. Reddell, Charles R. Bailey, Jacobs Technology - NASA JSC

This paper reports results of recent proton and heavy ion SEE testing on a variety of COTS and non-COTS electronic devices and assemblies tested for the International Space Station and Multi-Purpose Crew Vehicle.

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TID Test Results of Optical Materials and Photodiodes for SIS Instrument (Dreams Project)Maite Alvarez-Alonso, Carlos Hernando, Juan Jose Jimenez, Israel Martin, Francisco Javier Alvarez, David Escribano, INTA

The sensitivity to total dose of optical materials and custom photodiode candidates for EXOMARS 2016 is studied. The materials tested include Teflon, Delrin and five differ-ent Optical filter glasses from Schottt and Optics Balzers Jena.

Compendium of Single-Event Latchup and Total Ionizing Dose Test Results of Commercial and Radiation Tolerant Operational AmplifiersFarokh Irom, Shri G. Agarwal, Mehran Amrbar, Jet Propulsion Laboratory

This compendium reports on single-event latchup and total ionizing dose results for a variety of operational amplifiers targeted for possible use in NASA spacecraft. It cov-ers devices tested over the last 15 years.

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASAKenneth A. LaBel, Alvin J. Boutte, Dakai Chen, Michael J. Campola, Megan C. Casey, Jonathan A. Pellish, Jean-Marie Lauenstein, Raymond L. Ladbury, NASA/GSFC; Martha V. O’Bryan, Donna J. Cochran, Edward P. Wilcox, Robert A. Gigliuto, Melanie D. Berg, AS&D Inc.; Stephen P. Buchner, Dale McMorrow, Naval Research Laboratory; Robert R. Davies, Ball Aerospace & Technologies Corp.

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, proton-induced displacement damage, and total ionizing dose.

Radiation Effects on Candidate Electronic Components for Particle Accelerator Electronic SystemsNikolaos Trikoupis, Juan Casas-Cubillos, Julien Mekki, CERN

Radiation results of candidate electronic components for particle accelerator electronic systems are presented. Their proper functionality and the drift of their parameters is analysed based on the total ionizing dose and displacement damage.

Compendium of Radiation-Induced Effects for Candidate Particle Accelerator ElectronicsPascal Oser, Giovanni Spiezia, Markus Brugger, Gilles Foucard, Eleftherios Fadakis, Roberto Losito, Alessandro Masi, Julien Mekki, Paul Peronnard, Gennaro Ruggiero, Raffaello Secondo, CERN - European Laboratory for Nuclear Research; Remi Gaillard, IEEE Senior Member, Consultant

Vulnerability of a variety of components for particle accelerators electronics to single event effects, total ionizing dose and displacement damage has been analysed and are presented hereafter.

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SEE Testing Results for RF and Microwave ICsGeorge V. Chukov, Vadim V. Elesin, Galina N. Nazarova, Alexander Y. Nikiforov, Dmitry V. Boychenko, Vitaly A. Telets, Alexander G. Kuznetsov, Konstantin M. Amburkin, National Research Nuclear University

A short overview of single event effects for a variety of RF and microwave ICs is presented. New results obtained at the SPELS test center have been used along with published data.

Compendium of TID Comparative Results under x-Ray, Gamma and LINAC IrradiationLeonid N. Kessarinskiy, Dmitry V. Boychenko, Andrey G. Petrov, Pavel V. Nekrasov, Armen V. Sogoyan, National Research Nuclear University Moscow Engineering Physics Institute (NRNU MEPhI); Vasily S. Anashin, Pavel A. Chubunov, JSC Institute of Space Device Engineering

Compendium of TID comparative results under X-ray, Gamma and LINAC irradiation is presented. The new joint method of X-ray and gamma irradiation employment for TID investigations and experimental results are presented.

Laser Pulse Tests of Bipolar Junction Transistors (BJTs) for SET AnalysisAndreas Schüttauf, Christian Daniel, Cristina Plettner, Astrium Space Transportation; Mariel Trigianese, Ferdinando Tonicello, Christian Poivey, ESA/ESTEC

In order to study the Single Event Transient (SET) sensitivity of discrete bipolar junc-tion transistors, laser tests conducted at EADS Innovation Works in Sureness are pre-sented and discussed in relation to PSPICE simulations.

Femtosecond Laser Simulation Facility for SEE IC TestingAndrey N. Egorov, Alexander I. Chumakov, Oleg B. Mavritskiy, Alexander A. Pechenkin, Dmitry V. Savchenkov, Vitaliy A. Telets, Andrey V. Yanenko, National Research Nuclear University, Moscow Engineering Physics Institute (NRNU MEPhI)

The new SEE laser simulation facility based on femtosecond laser source with tunable pulse duration is presented, and its most important features are discussed. The influ-ence of laser pulse duration on simulation results is observed.

Swift Heavy Ion Irradiation Capabilities at the National Superconducting Cyclotron Laboratory at Michigan State UniversityAndreas Stolz, Daniela Leitner, Wolfgang Mittig, Mathias Steiner, NSCL / Michigan State University; Georg Bollen, Frederique Pellemoine, Reginald M. Ronningen, FRIB / Michigan State University

Irradiation capabilities at the National Superconducting Cyclotron Laboratory at Michigan State with ions from hydrogen to uranium with energies of up to 170 MeV/u for material science and single-event effect testing are presented.

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Roscosmos Test Facilities for Total Ionizing Dose Testing of Electronic ComponentsAlexander S. Petrov, Konstantin I. Tapero, Viktor N. Ulimov, Research Institute of Scientific Instruments (RISI); Vasily S. Anashin, Pavel A. Chubunov, Joint - Stock Company Institute of Space Device Engineering (JSC ISDE)

Roscosmos test facilities for total ionizing dose testing of electronic components intended for space application are addressed. Examples of the application of these test facilities for different test methods are examined.

The New Gamma Irradiation Facility at the National Research Nuclear University MEPhIAlexey S. Artamonov, Anton A. Sangalov, Alexander Y. Nikiforov, Vitaly A. Telets, Dmitry V. Boychenko, National Research Nuclear University MEPhI

The new gamma irradiation facility recently installed at the National Research Nuclear University MEPhI (Moscow, Russia) is presented

Mirage: a New Proton Facility for the Study of Direct Ionization in Sub-100nm TechnologiesSophie Duzellier, Guillaume Hubert, Romain Rey, ONERA; Françoise Bezerra, CNES

The MIRAGE proton beam line was developed for investigating radiation effects in electronics. Standard beams are used for studying TiD/TnID effects whereas low cur-rent configuration is devoted to direct ionization effects in advanced technologies.

New Gamma-Radiation Facility for Device Testing in SpainYolanda Morilla, Gema Muniz, Celestino I. Sanchez-Angulo, Javier Praena, Centro Nacional de Aceleradores (US-CSIC-JA); Manuel Dominguez, Pedro Martin, Eugenio Munoz, Joaquín Jimenez, Gonzalo Fernandez, ALTER Technology (TUV NORD)

Only few laboratories around the world are available for complete testing of devices to be used in space missions. RADLAB can achieve the standards, meet special requests, in the lead to complete component qualification.

First Successful SEE Measurements with Heavy Ions in BrazilNilberto H. Medina, Nemitala Added, Vitor A.P. Aguiar, Eduardo L.A. Macchione, University of Sao Paulo; Marcilei A.G. Silveira, Renato Giacomini, Marco A.A. de Melo, Roberto B.B. Santos, Centro Universitario da FEI; Luis E. Seixas Jr., Centro de Tecnologia da Informacao Renato Archer

The first SEE measurements with heavy ions in Brazil is reported. The heavy ions were produced at the Sao Paulo Pelletron accelerator. Heavy ion beams were used to test commercial off-the-shelf transistors.

Intensity Upgrade to the TRIUMF 500 MeV Large-Area Neutron BeamMichael Trinczek, Ewart W. Blackmore, TRIUMF

The TRIUMF BL1B neutron/proton facility has been upgraded with improved shield-ing of the neutron production converter to provide higher neutron intensities. FLUKA calculations and beam measurements will be presented.

W-50

W-51

W-52

W-53

W-54

W-55


40

W-56

W-57

W-58

W-59

W-60

6:00 PM

SEE Test Results of Electronic Components Performed on Roscosmos Test FacilitiesVasily S. Anashin, Alexander E. Kozyukov, Anatoly A. Kazyakin, Alexander S. Kuznetsov, Linaris R. Bakirov, Viacheslav S. Korolev, Kirill A. Artemyev, Konstantin Zh. Faradian, Joint - Stock Company Institute of Space Device Engineering (JSC ISDE)

The paper presents SEE test results of electronic components foreseen to be used in the satellite equipment. They were provided to determine electronic components hardness level and also SETs studying and techniques to record them.

Analysis of Space Environment Measurement Carried Out by the Roscosmos Monitoring System ElementsVasily S. Anashin, Grigory A. Protopopov, Ilya V. Elushov, Pavel V. Binyukov, Alexey P. Polinkin, Joint - Stock Company Institute of Space Device Engineering (JSC ISDE)

Total ionizing dose (TID) sensors data analysis is presented. TID sensor features are described. Dose rate abrupt increases analysis is carried out considering other flight data. The flight data is compared with space models.

Analysis of Geostationary and Polar Orbit Space Environment Data Processed by the Russian Federal Space Agency (Roscosmos) Monitoring SystemVasily S. Anashin, Grigory A. Protopopov, Ilya V. Elushov, Joint - Stock Company Institute of Space Device Engineering (JSC ISDE); Pavel A. Shatov, Sergey V. Tasenko, Fiodorov Institute of Applied Geophysics

Analysis of the flight data obtained with spectrometers placed on several spacecrafts are presented. Flight data are compared with trapped and solar particles space models including AX8, AX9, CRRESELE, JPL, Psychic, Rosenquist, Nymmik.

Simulation of Single Event Effects and Rate Prediction: CODES an ESA ToolPatricia Goncalves, Mário Pimenta, LIP; Ana Keating, LIP, and ESA; Sergio Coutinho, Eamonn Daly, CyberOffice; Ali Zadeh, ESA

CODES is an ESA GEANT4 based top level engineering tool, to predict Single Event Effects in EEE devices. It is based on Geant4 and its web-based interface is deployed in PHP.

A Case Study of in-Orbit SEU Rate Calculation Using the ForeCast Software PackageYi Sun, Qing-Kui Yu, Min Tang, Lei Luo, Ying Zhang, Ming Zhu, China Academy of Space Technology; Li-Sang Zheng, Chen Shen, Ding Gong, Cogenda Electronics Co. Ltd

A study of in-orbit SEU rate calculation of a FPGA , with newly developed software ForeCast. The rates calculated with the RPP/IRPP model and the composite sensitive volume method are compared against flight datas.

end oF WedneSdAy SeSSionS


41


9:00 – 9:55 AMNapoleon Bonaparte meets Alexander the Great in the French Campaign in Egypt and SyriaAndrew Michael Chugg, MBDA

Napoleon’s invasion of Egypt in 1798 eventually developed into a military disaster with the destruction of the French fleet by Nelson whilst it lay at anchor in Aboukir Bay and the later surrender of the entire French Army of the Orient following the Battle of Alexandria in 1801. However, the lasting legacy of the expedition has not proved to be military exploits and adventurism but rather scholarly inquiries and investigations, including the discovery of important artifacts such as the Rosetta Stone and a sarcophagus said to have been used for the tomb of Alexander the Great. The research performed by the expedition’s scholars culminated in the publication of the magnificent multi-volume Description de l’Égypte under Napoleon’s patronage in 1809. This talk presents the astonishing story of Napoleon’s fifty intrepid “Savants” and what they saw, heard and deduced during the Napoleonic occupation of Egypt. But, it also relates the yet more curious story of another two centuries of further investigation, obfuscation and doubt, which has only recently begun to veer towards vindication. Only in the new millennium has it finally come to seem probable on the evidence that the magnificent ancient sarcophagus, now housed in the Egyptian hall of the British Museum, provides a unique physical connection between Alexander the Great, Julius Caesar and Napoleon Bonaparte.

Andrew Michael Chugg is the author of twenty papers on radiation effects pub-lished in IEEE Transactions on Nuclear Science since 1997 and in 2013 he was Technical Chair of the RADECS Conference held in Oxford. He is currently Senior Technical Expert in EMC & Radiation Physics at MBDA. However, he is also the author of a number of papers on Alexander the Great published in ancient history and classics journals, such as Greece & Rome and the Ancient History Bulletin. He has appeared as an Alexander expert on BBC Radio and in several National Geographic TV documen-taries. He has also written various books on the same subject including The Quest for the Tomb of Alexander the Great and Alexander’s Lovers and his research on the tomb in particular has been covered in many newspaper and magazine articles. He is cur-rently nearing the completion of a project to reconstruct the highly influential account of Alexander’s reign by Cleitarchus, which was written in Alexandria in the second quarter of the third century BC, but which has been lost since the time of the Roman Empire.

Technical Program Thursday

42

SESSION H9:55 AM

H-110:00 AM

H-210:15 AM


H-311:00 AM

H-411:15 AM

H-511:30 AM

SPACE AND TERRESTRIAL ENVIRONMENTSSeSSion inTroduCTionChair: Eamonn Daly, ESA/ESTEC

The Ganymede Radiation Environment Engineering Tool (GREET) for JUICE Mission Environment PredictionPete Truscott, Kallisto Consultancy Ltd; Fan Lei, RadMod Research Ltd; Daniel Heynderickx, DH Consultancy BVBA; Hugh Evans, Giovanni Santin, ESA/ESTEC & Rhea; Petteri Nieminen, ESA/ESTEC

The GREET model has been developed to calculate the influence of Ganymede and its magnetic field on Jupiter’s trapped electron environment. This paper describes the model, developed for ESA’s JUICE mission, and the initial results.

Improvements to Telstar Measurements of Artificial Radiation Belts from the 1962 High Altitude Nuclear TestsBernard Roth, Applied Research Associates, Inc.

US and USSR high altitude nuclear tests in 1962 produced artificial radiation belts. Numerical recalibration of Telstar satellite beta detector sensitivity indicates that trapped beta fluxes were a factor 3 lower than published estimates.


Low Thrust Geostationary Transfer Orbit (LT-GTO) Radiation Environment and Associated Solar Array Degradation Modelling and Ground TestingScott R. Messenger, University of Maryland Baltimore County; Frankie Wong, Bao Hoang, Space Systems/Lora; Cory D. Cress, Robert J. Walters, Naval Research Laboratory; Craig A. Kluever, University of Missouri-Columbia

Low-thrust geostationary transfer orbits (LT-GTOs) offer significant cost advantages but subject the spacecraft to severe radiation environments. This paper describes the LT-GTO radiation environment with practical implications on solar array technologies.

How Long Can the Hubble Space Telescope Operate Reliably?Michael A. Xapsos, David N. Haskins, Kenneth A. LaBel, NASA/GSFC; Craig A. Stauffer, AS&D, Inc.; Thomas Jordan, EMP Consultants; Christian Poivey, ESA/ESTEC

Total ionizing dose exposure of electronic parts in the Hubble Space Telescope is ana-lyzed using 3-D ray trace and Monte Carlo simulations. Results are discussed along with other potential failure mechanisms for science operations.

FLUkA Calculation of the Neutron Albedo Encountered at Low Earth OrbitsArnaud Claret, CEA Saclay; Markus Brugger, Alfredo Ferrari, CERN; Natacha Combier, APC; Philippe Laurent, CEA Saclay, and APC

This paper presents Monte-Carlo simulations based on Fluka code aiming to calculate the energetic and angular distribution of the neutron albedo encountered at low Earth orbits.


43

H-611:45 AM

H-712:00 PM

H-812:15 PM

POSTER PAPERSPH-1

PH-2

Angular Distribution of Protons Measured by the Energetic Particle Telescope on PROBA-VStanislav Borisov, Sylvie Benck, Mathias Cyamukungu, Université Catholique de Louvain; Paul O’Brien, Joseph Mazur, Aerospace Corporation; Petteri Nieminen, Hugh Evans, Eamonn Daly, European Space Agency

Angular distribution and contamination of proton spectra cause discrepancies between measurements and models. Analyzing Energetic Particle Telescope data (uncontaminated charged particle fluxes onboard PROBAV), we account for angular distribution and compare to AP8/AP9 models.

Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude Vs . Underground Experiments, Modeling and Numerical Monte Carlo SimulationTarek Saad Saoud, Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Aix-Marseille University; Frédéric Wrobel, Frédéric Saigné, Luigi Dilillo, Université Montpellier 2; Philippe Cocquerez, CNES

Multi-site characterization of terrestrial radiation using a CCD camera and numerical simulations demonstrate the CCD sensitivity to low energy protons and muons and the role of alpha-emitters in its response at sea level.

Real-Time Testing of 90nm COTS SRAMs at Concordia Station in AntarcticaGeorgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Aida Todri, Arnaud Virazel, Laboratoire d’Informatique, de Robotique et de Microelectronique de Montpellier; Philippe Cocquerez, CNES; Jean-Luc Autran, Institut Materiaux Microelectronique Nanosciences de Provence; Antonio Litterio, ENEA - Programma Nazionale di Ricerche in Antartide; Frederic Wrobel, Institut d’Electronique du Sud and Institut Universitaire de France; Frédéric Saigné, Institut d’Electronique du Sud

We present the results of 90nm SRAMs real-time testing at the Concordia station in Antarctica. Besides the SER, the results show the occurrence of major events such as SELs and isotropic distribution of neutrons.

Space Radiation, Space Plasma, and Plume Plasma Design Considerations for All Electric GEO Satellite MissionsJustin J. Likar, Alexander L. Bogorad, Kevin August, Robert E. Lombardi, Keith Kannenberg, Roman Herschitz, Lockheed Martin Space Systems

Geostationary satellites that utilize “All Electric” propulsion systems are subjected to comparatively complex space radiation, space plasma, and plume-generated plasma environments. Design and operational challenges are identified with design guide-lines and proposed solutions presented.

The Design of a Novel Surface Potential Monitor at GEO in ChinaChaoyang Zhou, Shengsheng Yang, Yi Wang, Xiaogang Qin, Kai Tian, Lanzhou Institute of Physics

A novel surface potential monitor has been developed for a satellite at GEO in China. New leakage current eliminating and zero clearing techniques were used to ensure the measurement of the surface potential.


44

PH-3

PH-4

PH-5

PH-6

PH-7

In Flight Measurements of Radiation Environment on Board the Argentinean Satellite SAC-DDaniel Boscher, Vincent Maget, Sebastien Bourdarie, Didier Lazaro, ONERA; Thomas Cayton, Los Alamos National Laboratory; Thomas Baldran, Philippe Bourdoux, EREMS; Eric Lorfevre, Guy Rolland, Robert Ecoffet, CNES

Measurements of the ICARE-NG/CARMEN-1 detector on board the low Earth orbit Argentinean satellite SAC-D are presented. Marge anisotropy is observed. A SVD method was used to reconstruct the proton spectrum.

A New Proton Model for Low Altitude High Energy SpecificationDaniel Boscher, Angelica Sicard-Piet, Didier Lazaro, ONERA; Thomas Cayton, Los Alamos National Laboratory; Guy Rolland, CNES

A proton model was developed using measurements from different detectors on board different low altitude. It gives integrated proton flux fort he range 82-650MeV and for altitudes lower than 800km.

Predictions and Comparisons of Electron-Induced Dose in the Context of Jupiter MissionsGiovanni Santin, ESA/ESTEC and RHEA System BV; Laurent Desorgher, Paul Scherrer Institut; Sergio Ibarmia, INTA; Vladimir Ivanchenko, CERN; Pierre-François Peyrard, Jean-Charles Thomas, Pierre Pourrouquet, TRAD Tests & Radiation; Petteri Nieminen, Christian Erd, ESA/ESTEC

Comparison for TID levels for Jovian trapped electron environment by several trans-port tools show generally agreement within ~20%. Preliminary spectra comparisons also show close predictions. A problem area was identified for thicker Bremsstrahlung dominated shielding.

e2-RAD: Results of the ESA Energetic Electrons Radiation Assessment StudyMichael Wind, Jayasimha Bagalkote, Peter Beck, Marcin Latocha, Seibersdorf Laboratories GmbH; Dietmar Georg, Markus Stock, Medical University Vienna / AKH Wien; Petteri Nieminen, European Space Agency (ESA/ESTEC); Pete Truscott, University of Minnesota

Experiments and numerical simulations are done to study the performance of two-layered graded shielding in energetic electron fields using box and plane shielding geometries composed of aluminium, lead and tantalum.

AVIDOS - a Tool at ESA’s Space Weather Portal for the Assessment of Space Radiation on-Board AircraftMarcin Latocha, Peter Beck, Seibersdorf Laboratories; Alexi Glover, Juha-Pekka Luntama, ESA ESAC

The paper presents latest developments of AVIDOS - a tool for the assessment of radi-ation environment at aviation altitudes due to Galactic Cosmic Radiation. Currently, AVIDOS is being extended to include Space Weather effects.


Neutron Shielding Effect of Stacked Servers and Its Impact on Soft Error RateTakashi Kato, Taiki Uemura, Hideya Matsuyama, Fujitsu Semiconductor Ltd.; Ryoto Akano, Yukinobu Watanabe, Kyushu University

The shielding effect of stacked servers on terrestrial neutrons has been studied. We have revealed that a soft error rate is reduced through both the neutron flux attenua-tion and the distortion of the energy spectrum.


Women in Aerospace TodayLuisella Giulicchi, European Space Agency

Aerospace is a wonderful profession for engineers and scientists. Working at the fore-front of technology for the benefit of humankind inspires individuals and captures the imagination of the wider public. Such appealing work should attract the most talented people regardless of their gender and diversity in the work environment should not be an issue.

Hypatia of Alexandria, who lived in the 4th century AD, is considered to be the first notable woman in mathematics, philosophy and astronomy and she was head of the Platonist school. Since then many other relevant examples have followed and made significant impacts on engineering and scientific fields. Despite this, women remain a minority in the aerospace domain today.

The aerospace sector needs to fully benefit from a larger pool of talented profession-als, including men and women, to successfully compete globally. By building a more inclusive environment we can achieve more and more challenging goals and realize the most ambitious visions for the next decades.

The talk will provide an overview of the current status of gender diversity in the aero-space world, some historical information and recollections from personal experience.

Luisella Giulicchi biography: M.S. (with honors), Electronic Engineering, University of Florence, Italy. M.S., Space System Engineering, University of Delft, The Netherlands. Research Fellow, CERN (European Particle Physics Laboratory), Switzerland. Working at the European Space Agency (ESA) in the Netherlands since 1993. Initially responsible for R&D activities concerning GN&C technologies and use of GPS for aerospace applications. Then held several technical management positions of increasing responsibility in spacecraft project development: Bepi Colombo, the mission to Mercury; SMART-1, the first European Lunar mission; ESA/NASA LISA Pathfinder mission. Currently responsible for the spacecraft system engineering of the Copernicus Sentinel-1 mission. Copernicus is an initiative headed by the European Commission (EC) in partnership with the European Space Agency and the European Environment Agency (EEA) for global monitoring of environment and security.

Throughout her career Luisella Giulicchi actively participated in several profes-sional organizations. Chair and member of the International Programme Committees for several space related conferences organized by ESA, American Institute of Aeronautics and Astronautics (AIAA), International Federation of Automatic Controls

45

PH-8


WOMEN IN ENGINEERING INVITED TALk

1:00 – 1:45 PMLA Seine A, B And C


46

(IFAC), American Astronautical Society (AAS), International Astronautical Federation (IAF) and Council of European Aerospace Societies (CEAS). Program Chair (2007) and Conference General Chair (2010) for the AIAA GN&C conference. Invited speaker, lec-turer and author of several publications; Editor and paper reviewer for scientific jour-nals. AIAA Associate Fellow. Since 2013 member of the AIAA Board of Directors as Director for the International Region and member of the Board of Directors of Women in Aerospace (WIA) Europe as Treasurer and Director for Institutional Relations.

inTroduCTion

Chair: Jean-Luc Leray, CEA

end oF ThurSdAy SeSSionS

RADIATION EFFECTS COMMITTEE ANNUAL OPEN MEETING

RADECS ASSOCIATION ANNUAL OPEN MEETING


POSTER SESSION1:45 – 4:30 PM

LeS CLuBS de JAZZ / JAZZLeVeL -1

4:30 PM




9:00 – 9:55 AM

SESSION I9:55 AM

I-110:00 AM

Space Flight Project Complexity: Human Risk ManagementMichel Tognini, Astronaut

Michel Tognini will talk about his two space missions, the space projects and the interaction between human and machine in complex situations.

Space programmes vary significantly in size, duration, and complexity, this neces-sitates continued research to develop innovative systems, solutions and products for the aerospace, human-machine interaction, robotic systems and so on. This is done at all levels, including operations and astronaut training, end-to-end planning, prepara-tion, implementation and execution of spacecraft and facility operations. Space proj-ects are highly risky; Michel Tognini will explain how risk management approaches are important and more specifically supporting risk perception and control, and a common vision for the entire organisation.

He will give an overview on the International Space Station, future missions in space, and astronaut training.

Michel Tognini biography: Michel Tognini is a former European CNES and ESA astronaut who served as Head of the European Astronaut Centre of the European Space Agency from Jan. 2005 to Nov. 2011. M. Tognini made his first spaceflight on July 1992 aboard Soyuz TM-15 to link with the Mir space station and flew again aboard the Space Shuttle Columbia STS-93 on July 1999. During this second mission his primary task was to assist in the deployment of the Chandra X-Ray Observatory, and to conduct a spacewalk if needed.

M. Tognini also attended the NASA Johnson Space Center and was initially assigned to the Operations Planning Branch of the Astronaut Office working technical issues on the International Space Station, and was subsequently supporting the Mobile Base System and the European Robotic Arm. M. Tognini has 4000 flight hours on 80 types of aircraft and has prepared about 200 papers, presentations and conferences about Human Spaceflights.

DOSIMETRySeSSion inTroduCTionChair: Arto Javanainen, University of Jyväskylä

A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects MeasurementsDale McMorrow, Jeffrey H. Warner, Stephen P. Buchner, Joseph S. Melinger, Naval Research Laboratory; Nicolas J-H. Roche, Naval Research Laboratory and George Washington University; Ani Khachatrian, Naval Research Laboratory and Sotera Defense Solutions

A pulsed-laser dosimetry approach for two-photon absorption single-event effects (TPA SEE) measurements is presented and demonstrated, permitting online monitor-ing and control of the operating point of the TPA SEE experimental beamline.

47

Technical Program Friday

48

I-210:15 AM

POSTER PAPERSPI-1

PI-2

PI-3

PI-4

A New RadMon Version for the LHC and Its Injection LinesGiovanni Spiezia, Paul Peronnard, Alessandro Masi, Markus Brugger, Roberto Losito, Julien Mekki, Pascal Oser, CERN; Salvatore Danzeca, Rubén Garcia Alia, CERN and IES, Montpellier University; Remi Gaillard, IEEE senior member, Consultant; Laurent Dusseau, IES, Montpellier University

The design strategy and the sensors of the new RadMon, used for monitoring the radiation mixed field of the LHC accelerator, are described highlighting the results of the radiation robustness and the measurement accuracy.

Flexible Sensors Based on Radiation-Induced Diffusion of Silver in Ge20Se80 Chalcogenide GlassPradeep Dandamudi, Adnan Mahmud, Michael N. Kozicki, Yago Gonzalez-Velo, Hugh J. Barnaby, B. Roos, Terry L. Alford, Keith E. Holbert, Arizona State University; Mahesh Ailavajhala, Maria Mitkova, Boise State University

In this study, we extend our previous work on chalcogenide glass (ChG) based radia-tion sensors to demonstrate the feasibility of easily manufacturable flexible radiation sensors.

Development Detection Technique with Alpha-Tracking and Comparison of EmissivityHiroko Mori, Taiki Uemura, Hideya Matsuyama, Fujitsu Semiconductor Ltd.; Takashi Yamazaki, Takeshi Soeda, Fujitsu Laboratories Ltd.

We achieve accurate measurement of alpha emissivity with using alpha-tracking technique through decreasing effect of background. We measure various LSI materials with using this technique.

Fully-Depleted Silicon-on-Insulator Devices for Use as Dosimeters in Radiation Cancer TherapyYulong Li, Warren Porter, Ivan Roth, Chaitanya Kshirsagar, Yang Su, Margaret A. Reynolds, Bruce J. Gerbi, Steven J. Koester, University of Minnesota

The response of FDSOI MOSFETs to therapeutic X-rays is shown. The threshold volt-age versus dose, substrate bias, energy, and angle are determined, and the potential of using FDSOI varactors for wireless dosimeters is analyzed.

Characterization and Modelling of a Floating Gate Dosimeter with Gamma and Protons at Various EnergiesSalvatore Danzeca, Markus Brugger, Alessandro Masi, Giovanni Spiezia, CERN; Joan Cesari, Alvaro Pineda, IC Malaga; Laurent Dusseau, IES, Université Montpellier 2

A prototype of floating gate sensor FGDOS has been characterized with a 60Co source and with protons. A model of the sensor permits to measure the charge yield for dif-ferent particle types and different energies.


49

PI-5

PI-6

PI-7

PI-8


SESSION J10:55 AM

Qualification and Characterization of SRAM Memories Used as Radiation Sensors in the LHCSalvatore Danzeca, Giovanni Spiezia, Markus Brugger, Rubén Garcia Alia, Petra Mala, Alessandro Masi, Paul Peronnard, CERN; Laurent Dusseau, IES; Jaroslav Soltes, Ladislav Vierebl, UJV Rez

An 8 Mbit 90-nm memory is proposed as new high energy fluence sensor. The pro-tons cross sections (30 MeV-480 MeV), thermal neutrons and the dependence on TID and the control circuitry is presented.

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETsSebastián Carbonetto, Mariano Garcia Inza, José Lipovetzky, Martín Carrá, Eduardo G. Redin, Lucas Sambuco Salomone, Adrián Faigón, Device Physics-Microelectronis Laboratory, School of Engineering, Universidad de Buenos Aires

We propose the use of CMOS differential circuits with inherent amplification to enhance the performance of MOSFETs dosimeters. A discrete-level prototype was tested as regards sensitivity, temperature compensation and noise at different opera-tion conditions.

Ultra-Thin 3D Detectors: Charge Collection Characterisation and Application for MicrodosimetryLinh T. Tran, Marco Petasecca, Michael L. F. Lerch, Anatoly B. Rosenfeld, University of Wollongong; Dale A. Prokopovich, Mark I. Reinhard, Australian Nuclear Science and Technology Organisation; Celeste Fleta, Giulio Pellegrini, Consuelo Guardiola, IMB-CNM (CSIC)

The charge collection in ultra-thin 3D detector has been studied using 5.5MeV 2+He and 20MeV 12C ion microbeam. A stronger effect of damage was observed after raster scanning with 20MeV 12C ions

Characterisation of an Alternative Novel Diamond Based Microdosimeter PrototypeJeremy A. Davis, Susanna Guatelli, Marco Petasecca, Michael L. F. Lerch, Anatoly B. Rosenfeld, Centre for Medical Radiation Physics; Andrew D. C. Alves, Kumaravelu Ganesan, Steven Prawer, David Jamieson, University of Melbourne; Dale A. Prokopovich, Mark I. Reinhard, Australian Nuclear Science and Technology Organisation

A novel diamond microdosimeter prototype with sensitive volumes separated through laser milled trenches is characterized by means of Ion Beam Induced Charge collection (IBIC) measurements. Significant lateral confinement of charge collection is shown to occur.

BreAK

SINGLE EVENT EFFECTS: MECHANISMS AND MODELINGSeSSion inTroduCTionChair: Nathaniel A. Dodds, Sandia National Laboratories


50

J-111:00 AM

J-211:15 AM

J-311:30 AM

J-411:45 AM

J-512:00 PM

Upsets in Phase Change Memories due to High-LET Heavy Ions Impinging at an AngleSimone Gerardin, Marta Bagatin, Alessandro Paccagnella, University of Padova; Angelo Visconti, Mauro Bonanomi, Silvia Beltrami, Micron Technology; Véroniqué Ferlet-Cavrois, ESA/ESTEC

We present the first evidence of single event upsets in 45-nm phase change memories caused by high-LET heavy ions at tilted angles. The upset cross section is compared with that of NOR Flash.

Dynamic Modeling of Radiation-Induced State Changes in HfO2/Hf 1T1R RRAMWilliam G. Bennett, Nicholas C. Hooten, Ronald D. Schrimpf, En Xia Zhang, Stephanie L. Weeden-Wright, Robert A. Reed, Michael A. Alles, Vanderbilt University; Dimitri Linten, Andrea Fantini, Malgorzata Malgorzata Jurczak, IMEC

An experimentally-verified dynamic model is presented for HfO2/Hf 1T1R RRAMs under heavy- ion irradiation for accurate prediction of single-event response in scaled technologies. Also, a hardening technique is presented that mitigates SEUs.

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in SiliconDale McMorrow, Jeffrey H. Warner, Stephen P. Buchner, Joseph S. Melinger, Naval Research Laboratory; Joel M. Hales, Joseph W. Perry, Georgia Institute of Technology; Ani Khachatrian, Sotera Defense Solutions; William T. Lotshaw, The Aerospace Corporation; Vladislav Dubikovsky, 6Intrace Medical SA

Nonlinear beam propagation software is used to predict quantitatively the two-photon absorption-induced charge density profiles generated by focused femtosecond laser pulses under conditions that are experimentally relevant for single-event effects studies.

Effects of Well-Doping and Layout on Soft-Error Vulnerability for Advanced Technology SRAMsIndranil Chatterjee, Bharat L. Bhuva, Robert A. Reed, Ronald D. Schrimpf, Vanderbilt University; Balaji Narasimham, J. K. Wang, Narayana Vedula, Brandon Bartz, Carl Monzel, Broadcom Corporation

The effects of well doping and layout on single-event upset cross-sections are demon-strated in 65, 40 and 28 nm triple-well SRAMs. The 40-nm parts exhibit upset-reversal phenomenon at high LETs.

Analysis of Single Event Upsets Induced by Low Energy Neutrons in a 25 nm MOSFETShin-ichiro Abe, Yukinobu Watanabe, Kyusyu University

We have analyzed SEUs induced by low energy neutrons in a 25nm MOSFET using PHYSERD simulation and clarified that the relative importance between elastic recoils and light ions depends on the size of interaction volume.


51


J-612:15 PM

POSTER PAPERSPJ-1

PJ-2

PJ-3

PJ-4

Effects of Stopping Ions and LET Fluctuations on Soft Error Rate PredictionStephanie L. Weeden-Wright, Michael P. King, Nicholas C. Hooten, William G. Bennett, Brian D. Sierawski, Ron D. Schrimpf, Robert A. Weller, Robert A. Reed, Marcus H. Mendenhall, Daniel M. Fleetwood, Vanderbilt University; Rob C. Baumann, Texas Instruments Incorporated

We evaluate the effects of ion LET variability on soft error rates for 65 nm SRAMs in typical (GEO, ISS) radiation environments. Properly accounting for LET fluctuations leads to significantly different error rate predictions.

The Impact of the Polarization Direction on Laser SEE Modeling in Complex ICsPetr K. Skorobogatov, Armen V. Sogoyan, Georgy G. Davydov, Andrey N. Egorov, Dmitry V. Savchenkov, Nuclear Research National University

Numerical and experimental evaluation of the laser radiation polarization influence on the CMOS 0.18-µm IC response is performed. The necessity of taking into account the polarization direction for SEE laser simulations is substantiated.

Verification of The Local Laser Irradiation Technique for SEE TestingDmitry V. Savchenkov, National Research Nuclear University MEPhI; Alexander I. Chumakov, Specialized Electronic Systems; Alexander A. Pechenkin, Oleg B. Mavritskiy, Andrey N. Egorov, National Research Nuclear University MEPhI

Local laser irradiation technique permits determining the relation between laser energy and its equivalent linear energy transfer in ICs without ion testing. This work discusses the technique and investigates experimentally the assumptions it relies on.

Random-Walk Drift-Diffusion Charge-Collection Model for Reverse-Biased Junctions Embedded in CircuitsMaximilien Glorieux, STMicroelectronics and Aix-Marseille University & CNRS, IM2NP Laboratory (UMR 6242); Jean-Luc Autran, Daniela Munteanu, Aix-Marseille University & CNRS, IM2NP Laboratory (UMR 6242); Sylvain Clerc, Gilles Gasiot, Philippe Roche, STMicroelectronics

A new computational model for charge transport based on parallelized random-walk drift-diffusion is proposed. The model has been successfully coupled with SPICE for circuit solving and feedback on the charge-collection process.

Circuit Level Modeling of Extra Combinational Delays in SRAM FPGAs Due to Transient Ionizing RadiationMostafa Darvishi, Yves Audet, Ecole Polytechnique de Montreal; Yves Blaquiere, Universite du Quebec a Montreal; Claude Thibeault, Ecole de Technologie Superieure

This paper presents a novel circuit level model that explains and confirms the extra combinational delays in a SRAM-FPGA (Virtex-5) due to radiation, which matches the experimental results by proton irradiation at TRIUMF.

52

PJ-5

PJ-6

PJ-7

PJ-8

PJ-9

PJ-10

12:30 PM

Numerical Simulation of SEB Induced by Heavy Ions in Silicon Carbide Schottky DiodeCarmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi, University of Cassino and Southern Lazio; Paolo Cova, Nicola Delmonte, Francesco Giuliani, University of Parma

A simulation study is presented aimed at describing phenomena involved in heavy ion induced SEB of SiC Schottky diode. It is demonstrated that the failure is caused by a strong local increase of the temperature.

Single-Event Latchup Modeling Based-on Coupled Physical and Electrical Transient Simulations in CMOS TechnologyLaurent Artola, Guillaume Hubert, Thomas Rousselin, ONERA

This paper presents a SEL modeling using coupled physical and transient electrical simulations. The method is validated by comparisons with experimental data. The SEL temperature dependence is investigated in a 0.18 µm CMOS inverter.

Single Event Transient Response of InAs Quantum-Well MOSFETsKai Ni, En Xia Zhang, Michael W. McCurdy, Nicholas C. Hooten, William G. Bennett, Robert A. Reed, Ronald D. Schrimpf, Daniel M. Fleetwood, Michael L. Alles, Vanderbilt University; Taewoo W. Kim, SEMATECH; Jesus A. del Alamo, Massachusetts Institute of Technology

Heavy-ion induced current transients are investigated for InAs quantum-well MOSFETs. The gate oxide suppresses gate transients, and the transient peak current depends strongly on applied gate bias during exposure.

Investigation of Single Event Induced Soft Errors in 1T1R PMC MemoryDebayan Mahalanabis, Hugh J. Barnaby, Michael N. Kozicki, Saba Rajabi, Arizona State University

Ion-strike induced single event in 1T1R Programmable Metallization cell (PMC) array is analyzed by constructing an equivalent circuit. Relationship between the critical switching condition of PMC and ion linear energy transfer (LET) is derived.

SEU Cross Section Calculation Based on Experimental Data of Another kind of ParticleFrederic Wrobel, Antoine D. Touboul, Vincent Pouget, Luigi Dilillo, Frédéric Saigné, Université Montpellier 2; Robert Ecoffet, Eric Lorfevre, Françoise Bezerra, Markus Brugger, CERN

We show how experimental SEU cross section can be used to characterize a device. We extract parameters that can be used for SEU cross section calculation for any other kind of particle.

Quantitative Study of Limiting Upset Cross-Section of DICE LatchDing Gong, Chen Shen, Jun Zhao, Cogenda Pte. Ltd.; Xiaochen Zhang, Lin Liu, Suge Yue, Beijing Microelectronics Technology Institute

DICE latch SEU cross-section by heavy ion elastic scattering is investigated in this paper. The influential factor including ion species, energy, incident angle etc are dis-cussed. Theoretical result matches experimental data well.

end oF ConFerenCe


53

NSREC 2014 will be held in Paris, France, July 14 – 18, 2014 at the Marriott Rive Gauche. Robert Ecoffet and his 2014 conference committee have assembled a strong technical program and social events that will provide abundant opportunities for discussing radiation effects with old and new friends in the international radiation effects community.

Supporters of the NSREC include 3D Plus, Aeroflex, Atmel, BAE Systems, Boeing, Honeywell, Intersil Corporation, Microsemi, Northrop Grumman, Peregrine Semiconductor Corporation, Southwest Research Institute, and Texas Instruments. We thank our supporters for their significant and continuing commitments to the conference, and we welcome other organizations to consider becoming supporters of the IEEE NSREC.

NSREC 2015 will be held in Boston, Massachusettes, July 13 – 17, 2015 at the Marriott Copley Place. The conference chair is Michael Xapsos of NASA Goddard Space Flight Center. Robert Reed of Vanderbilt University will be chair of the 2016 NSREC, which is planned for Portland, Oregon. Véronique Ferlet-Cavrois, ESA/ESTEC, has been named the 2017 NSREC chair.

As always, papers presented at the NSREC are eligible for publication in the December issue of the IEEE Transactions on Nuclear Science. It is particularly impor-tant for authors to upload their papers prior to the conference for consideration for publication in the December TNS Special Issue. Detailed instructions can be found at www.nsrec.com

Keep visiting our web site at www.nsrec.com for author information, paper submis-sion details, exhibitor links, on-line registration, and the latest NSREC information.

Allan JohnstonExecutive Vice Chairman

IEEE FELLOWS A distinguished member of the international radiation effects community was elected to the grade of IEEE Fellow on January 1, 2014.

Robert Reed, Vanderbilt University

Robert’s citation reads, “For contributions to understanding the effects of single-event particle radiation on integrated circuits.”

Marty ShaneyfeltChairman

RESG NEWS

EDITORSJim Schwank

Vice-Chairman of Publications

54

All papers accepted for oral or poster presentation to the technical program will be eligible for publication in a special issue of the IEEE Transactions on Nuclear Science (December 2014), based on a separate submission of a complete paper. Each paper will be subject to the standard full peer review given all papers submitted to the IEEE Transactions on Nuclear Science. All papers must be submitted on IEEE ScholarOne. Instructions for submitting papers can be found at the Conference web site www.nsrec.com. The deadline for submission of papers is the Friday before the Conference (July 11, 2014). Data Workshop papers are published in a Workshop Record and are not candidates for publication in the IEEE Transactions on Nuclear Science. This process is managed by the Workshop chair.

The review process for papers submitted to the Transactions is managed by a team of editors. To provide consistent reviews of papers, this editorial team manages the review process for all radiation effects papers submitted to the Transactions through-out the year. The editorial team consists of a senior editor and six associate editors who are technically knowledgeable in one or more specializations and are experi-enced in the publication process. If you would like to serve as a reviewer for the December issue of the Transactions or for radiation effects papers submitted through-out the year, please contact one of the editors. The editors for the 2014 NSREC are:

Dan Fleetwood, Senior EditorVanderbilt UniversityEmail: [email protected]

Dennis Brown, Associate EditorIEEE NPSSEmail: [email protected]

Sylvain Girard, Associate EditorUniversité de Saint-EtienneEmail: [email protected]

Pascale Gouker, Associate EditorMIT Lincoln LaboratoryEmail: [email protected]

Simone Gerardin, Associate EditorUniversity of PadovaEmail: [email protected]

Heather Quinn, Associate EditorLos Alamos National LaboratoryEmail: [email protected]

Hugh Barnaby, Associate EditorArizona State UniversityEmail: [email protected]

RESG NEWS

55

ARE yOU A MEMBER OF IEEE?

NSREC PUBLICATIONS

RADIATION EFFECTS COMMITTEE

ANNUAL OPEN MEETING

RADECS ASSOCIATION ANNUAL OPEN

MEETING

Now is the time to join the Institute of Electrical and Electronics Engineers (IEEE) and the Nuclear Plasma Sciences Society (NPSS). Why? First of all, you’ll become a mem-ber of the largest professional engineering society in the world. About 60% of NSREC attendees are IEEE members. Full membership in IEEE costs less than $200. IEEE members receive access to a broad range of benefits, including a terrific insurance program, on-line access to IEEE publications, and reduced rates at all IEEE sponsored conferences, including, of course, the IEEE NSREC and Short Course!

NPSS membership is $35. NPSS members receive a free subscription to NPSS News, and free on-line electronic access via IEEE Xplore to the IEEE Transactions on Nuclear Science (TNS) and the NSREC Data Workshop Record. Now members can search and view digital copies of all IEEE TNS papers on-line all the way back to the first IEEE NSREC in 1964. NPSS members get to vote in our NSREC elections, held at the annual open meeting on Thursday of the conference. What are you waiting for? Apply for membership at ewh.ieee.org/soc/nps/join-npss.html or visit the IEEE registration desk at the conference.

NSREC has three publications each year:

■ IEEE Transactions on Nuclear Science. This IEEE journal is the official archive of research papers presented at the NSREC Conference.

■ Radiation Effects Data Workshop Record. Published each year in October, this IEEE proceedings has become the source for radiation test data on semiconductor components.

■ NSREC Short Course Notebook. Published each July, this notebook contains tutorial presentations on the basic physics of radiation effects in circuits and sys-tems. It includes the instructors’ notes and text, and is given to participants of the annual Radiation Effects Short Course.

A complimentary copy of the 2014 IEEE Radiation Effects Data Workshop Record and the December special NSREC issue of the IEEE Transactions on Nuclear Science will be mailed to each NSREC technical session attendee. A CD of the NSREC Short Course Notebooks (1980 - 2014) will be given to short course attendees in Paris instead of a printed notebook.

You are invited to attend the IEEE Radiation Effects Committee’s Annual Open Meeting on Thursday, July 17, from 4:30 - 5:45 PM in room La Seine ABC, on The Banks of the River Seine, Level 0. All conference attendees and spouses are encour-aged to attend. We will discuss the 2014 conference and future IEEE Nuclear and Space Radiation Effects Conferences. There will be an election for the Junior Member-at-Large on the Radiation Effects Steering Group and an election for four members for the 2015 nominating committee. Nominations will be taken from the floor. All IEEE NPSS members present are eligible to vote. Refreshments will be provided.

Immediately following the conclusion of the IEEE Radiation Effects Committee’s Annual Open Meeting, the RADECS Association will hold their Annual Opening Meeting in the same location, 5:45 - 6:30 PM. Everyone is invited to stay for the open portion of this meeting to learn about future RADECS conferences.

RESG NEWS

56

2013 NSREC OUTSTANDING

CONFERENCE PAPER AWARD

2013 OUTSTANDING STUDENT PAPER AWARD

2013 OUTSTANDING DATA WORkSHOP

PRESENTATION AWARD

2013 RADIATION EFFECTS AWARD



Electron-Induced Single-Event Upsets in Static Random Access MemoryM. King, R. Reed, R. Weller, M. Mendenhall, R. Schrimpf, B. Sierawski, A. Sternberg, B. Narasimham, J. Wang, E. Pitta, B. Bartz, D. Reed, C. Monzel, R. Baumann, X. Deng, J. Pellish, M. Berg, C. Seidleck, E. Auden, S. Weeden-Wright, N. Gaspard, C. Zhang, D. Fleetwood

The primary author of the Outstanding Conference Paper was a student. Thus, the same paper is also the winner of the 2013 IEEE Outstanding Student Paper Award.

The Reliability of Software Algorithms and Software-Based Mitigation Techniques in Digital Signal ProcessorsH. Quinn, T. Fairbanks, J. Tripp, A. Manuzzato

The 2013 Radiation Effects Award was presented to Dale G. Platteter, retired, during the opening ceremonies of the 2013 conference. Dale’s citation reads “For significant contributions to the Radiation Effects Committee of the IEEE/NPSS.”

The winner of the 2014 Radiation Effects Award will be announced Tuesday morning, July 15. The purpose of the award is to recognize individuals who have had a sus-tained history of outstanding and innovative technical and/or leadership contribu-tions to the radiation effects community.

Nominations are currently being accepted for the 2015 IEEE Nuclear and Plasma Sciences Society (NPSS) Radiation Effects Award. The basis of the award is for indi-viduals who have: (1) a substantial, long-term history of technical contributions that have had major impact on the radiation effects community. Examples include bench-mark work that initiated major research and development activities or a major body of work that provided a solution to a widely recognized problem in radiation effects; and/or (2) a demonstrated long-term history of outstanding and innovative leader-ship contributions in support of the radiation effects community. Examples include initiation or development of innovative approaches for promoting cooperation and exchange of technical information or outstanding leadership in support of the profes-sional development of the members of the radiation effects community.

A cash award and plaque will be presented at the 2015 IEEE NSREC, Boston, Massachusettes in July 2015. Nomination forms are available electronically in PDF Format or in Microsoft Word format at www.nsrec.com/nominate.htm. Additional information can be obtained from Nick van Vonno, Member-at-Large for the Radiation Effects Steering Group. Nick can be reached at 321-725-7546 or at [email protected]

Awards

The Paris Marriott Rive Gauche, located in the heart of the famous “Paris Rive Gauche”, is the site for NSREC. It offers a unique atmosphere, just a short walk from the Butte aux Cailles and Mouffetard neighborhoods. All major sightseeing attractions are easily accessible from the hotel: Musée d’Orsay and the Louvre, the Eiffel Tower, Champs Elysees, the Arc de Triomphe, Notre Dame, the Latin Quarter, etc. With its variety and specific architecture, the “City of Lights” definitely has something for all tastes.

Several meeting rooms are available for use by any registered conference attendee at the Marriott on a first come, first served basis. NSREC encourages side meetings to be scheduled at times other than during technical sessions. Contact ETCic at 720-733-2003 or send an e-mail to [email protected] to make side meeting reservations before the confer-ence. To make a side meeting room reservation during the conference, see the NSREC Registration staff in the following room: Le Parc Montsouris A, Les Jardins / Parisian Gardens Level 3.

Notes: You must be a registered conference attendee before a side meeting room can be reserved! All audio/visual equipment and refreshments must be coordinated through the hotel and are the responsibility of the attendee hosting the meeting.

The 2014 IEEE NSREC will provide refreshments at breaks during the NSREC Short Course and Technical Sessions. A lunch is included for Short Course attendees on Monday, July 14. For registered Technical Session attendees, a light lunch will be available in the Industrial Exhibits area on Tuesday, Wednesday and Thursday.

Breakfast is included in the cost of the room for all Marriott Rive Gauche hotel guests. For NSREC hotel guests, this breakfast will be in Le Patio on Level 3, Les Jardins / Parisian Gardens. There will not be an NSREC breakfast for those attendees who do not stay at the Marriott Rive Gauche.

The Marriott has a full-service business center that can handle color and black/white photocopying, faxing, computers with internet access, and stationery supply. They are open Monday through Sunday from 6:45 AM to midnight. Guests can have 24-hour access for internet access and black/white copies only with prepaid cards. Costs asso-ciated with the Business Center may be put on your room account or they can be paid via credit card.

57

CONFERENCE LOCATION

ROOMS FOR SIDE MEETINGS

INCLUDED MEALS(ConFerenCe

ATTendeeS onLy)

BUSINESS CENTER

Conference Information

58

CONFERENCE REGISTRATION

IEEE NSREC REGISTRATION

ETCIC2254 EMERALD DRIVE

CASTLE ROCk, CO 80104

TEL: 720-733-2003 FAx: 720-733-2046

E-MAIL: ETC@ETCIC .US

ON-SITE REGISTRATIONLOCATION

ON-SITE REGISTRATION HOURS

CONFERENCE CANCELLATION

NSREC encourages Pre-Registration and offers a lower registration rate (“Early Registration”) if the payment is received by no later than Friday, June 13. After that date, the “Late Registration” rates will apply.

There are two acceptable forms of payment for registration and activity fees: 1) MasterCard, VISA, or American Express credit card as the preferred form of

payment.2) A check or wire transfer in US dollars or Euros will be accepted only if this is

the sole form of payment allowed by a company or government agency. A check or wire transfer must “clear” into the conference bank before the early book-ing deadline of June 13, 2014. For details, send an e-mail to [email protected] or call 720-733-2003.

Registrations can be submitted online at the NSREC website: www.nsrec.com. E-mailed or faxed registrations will be accepted with a credit card payment or you can mail the conference registration form along with your payment to ETCic. If your registration form and payment do not arrive at ETCic by June 30, then it would be better to hand-carry the payment to the conference for on-site registration. Telephone registrations will not be accepted.

All conference registration will take place in Le Parc Montsouris A, Les Jardins / Parisian Gardens Level 3 of the Marriott. If you have not yet registered, go to the “On-Site Registration” desk. If you have already registered, go to the “Pre-Registration” desk to pick up your prepared packets.

Sunday, July 13 5:00 PM – 8:00 PM

Monday, July 14 7:30 AM – 5:00 PM

Tuesday, July 15 7:30 AM – 5:00 PM

Wednesday, July 16 7:30 AM – 3:00 PM

Thursday, July 17 7:30 AM – 3:00 PM

Friday, July 18 7:30 AM – 10:00 AM

A €50 processing fee will be withheld from all refunds. Due to advance financial commitments, refunds of registration fees requested after June 13, 2014 cannot be guaranteed. Consideration of requests for refunds will be processed after the confer-ence. To request a refund, you must notify ETCic by fax at 720-733-2046 or e-mail at [email protected].

Registration and Travel

The 4-star Marriott Rive Gauche Hotel is located on the renowned Parisian “Left Bank”, close to Montparnasse, the Latin Quarter and Saint Germain des Prés. Hotel amenities include a 24-hour health club (complimentary to hotel guests), concierge desk, business center, room service, lobby ATM, parking garage, and a casual “Great Room” type of lobby which opens to the coffee bar and that opens to the cocktail lounge and that opens to the 2-floor restaurant. Small sitting areas are found all over this area. All conference sessions and exhibits will take place in their extensive Conference Center.

The 757 guest rooms are comfortably furnished in a crisp modern design. All rooms are non-smoking and feature windows with shades, individual climate control, LCD TV with video-on-demand and cable, wireless and high-speed internet (included in the NSREC room rate), work desk, iPod docking station, cof-fee maker, refrigerator, hair dryer, iron and iron-ing board, multiple phones with voice mail, plush bedding, a safe, and room service. Two levels are allocated to Executive rooms with some upgraded amenities and access to the Executive Lounge.

Standard and upgraded room rates are as follows: • €207.49 single/double occupancy per night for a Standard room with one king or

two single beds• €278.99 single/double occupancy per night for an Executive Level room with one

king or two single beds• €310.72 triple/quad occupancy per night for a Family Suite with two double beds• €350.49 single/double/triple occupancy per night for a Junior Suite with one

king bed and one sofa bed

All of the above rates include internet access in the room and daily breakfast for NSREC registered guests. The Value Added Tax (VAT) of 10% is included in the rates listed above. For U.S. government personnel, the standard room rate above is within the July 2014 U.S. government per diem for Paris. Based on availability, the conference room rates will be offered three days before and three days after the conference.

Room reservations should be made by using the special NSREC web link: https://resweb.passkey.com/Resweb.do?mode=welcome_ei_new&eventID=10857528. Enter your arrival and departure dates; then follow the prompts. Based on availabil-ity, you will be given the opportunity to choose a standard room type or one of the possible upgrades.

All rooms must be guaranteed by providing a credit card at the time of reservation. The cut-off for IEEE NSREC reservations is on June 13, 2014. Once the room block has been filled OR after the cut-off date (whichever comes first!), room accommodations will be confirmed on a space or rate available basis. Early reservations are strongly suggested!

Please be certain to notify the hotel of any change to your arrival or departure dates. When you check into the hotel, be sure to verify your departure date. Any cancel-lation must be made by no later than two full days prior to your scheduled arrival. Cancellations made after that time will result in a one-night room cancellation fee.

59

HOST HOTEL INFORMATION

MARRIOTT RIVE GAUCHE HOTEL & CONFERENCE

CENTER

17 BOULEVARD SAINT JACQUES

75014 PARIS, FRANCE

TEL: +33 140 787 980

HOTEL RESERVATIONS


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AIRPORT AND TRANSPORTATION

INFORMATION

AIRPORT SHUTTLES AND PUBLIC

TRANSPORTATION

Two airports are easily accessible in Paris. Charles de Gaulle International Airport (code CDG) is northeast of Paris, about 35 km/21.7 miles from the Marriott. Direct flights or excellent connections are available from major cities all over the world into this airport.

Paris Orly Airport (code ORY) is a great alternative airport that is 15 km/8.9 miles southeast of the Marriott. Please note that competitive airfares are sometimes lower into one of these airports than they are into the other -- it’s wise to check both.

CHARLES DE GAULLE INTERNATIONAL AIRPORT (CDG) TO THE MARRIOTT RIVE GAUCHE OR NEARBy:

Taxi Taxis between CDG and the Marriott are based on travel time and distance but an average rate is about €60 one way.

RER B train From CDG train stations (follow the “Paris by Train” signs inside the airport terminal 1 or 2) to Denfert-Rochereau station (3 blocks from the Marriott). Hours: 04:50 to 23:50 / 7 days a week Ticket price: €9.75 one way (subject to change) Website: http://www.ratp.fr/en/ratp/r_61839/roissy-charles-de-gaulle-airport//

Roissybus Direct bus line from any terminal at CDG Airport to Paris-Opera (follow the “Paris by Bus” signs inside the airport terminal). From Paris-Opera, connect to the Metro. Hours: 06:00 to 23:00 / 7 days a week Ticket price: €11.60 one way (subject to change) Website: http://www.ratp.fr/en/ratp/r_61872/roissybus/

PARIS ORLy AIRPORT (ORy) TO THE MARRIOTT RIVE GAUCHE OR NEARBy:

Taxi Taxis between the Marriott and ORY are based on travel time and distance but an average rate is about €30 one way.

Orlybus Direct bus line from the Sud (South) or Ouest (West) terminals at Orly Airport to the Denfert-Rochereau station (3 blocks from Marriott) Hours: 06:00 to 23:30 / 7 days a week Ticket price: €8.25 one way (subject to change) Website: http://www.ratp.fr/en/ratp/r_61866/orlybus/

Orlyval + An automated shuttle linking the Sud (South) and Ouest (West) RER B train terminals of Orly Airport to the RER B line at Antony. Connect to RER B at Antony, and go out at Denfert-Rochereau station (3 blocks from the Marriott) Hours: 06:00 to 23:00 / 7 days a week Ticket price: €12.85 one way (subject to change) + RER fare from Antony to Paris Website: http://www.ratp.fr/en/ratp/r_61864/orlyval/


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TRAIN TRAVEL:

Inter European train service is excellent from cities throughout the continent. The closest stations are the following:

Gare du Nord: This is the terminal for Eurostar shuttles (coming from London), about 6.5 km/4 miles north of the Marriott. From Gare du Nord, you can take RER line B to Denfert-Rochereau station (3 blocks from the Marriott).

Gare Montparnasse: This railway station is about 2 km/1.2 miles northwest of the Marriott. From Gare Montparnasse, you can take Metro Line 6 to Saint-Jacques station (1 block from the Marriott).

Gare de Lyon: This railway station is about 2 km/1.2 miles northwest of the Marriott. From Gare de Lyon, you can take Metro Line 14 to Bercy station, change for Line 6 to Saint-Jacques station (1 block from the Marriott).

Of course, from any railway station you can take a taxi to the Marriott. The fare inside Paris is based on travel time and distance but an average rate is about €15 to 25 one way.

From Charles de Gaulle Airport (CDG) to Marriott Rive Gauche HotelFollow the “Paris Est” signs to the “Porte d’Orleans”. Take the road called “Avenue du Général Leclerc” to the “Denfert Rochereau” square. Take a right turn onto the “Boulevard Saint Jacques”. The Paris Marriott Rive Gauche Hotel is at number 17.

From Paris Orly Airport (ORY)Follow the “Paris Sud” signs to the “Porte d’Orleans”. Take the “Avenue du General Leclerc” to the “Denfert Rochereau” square. Turn right onto the “Boulevard Saint Jacques”. The Paris Marriott Rive Gauche Hotel is at number 17.

The Marriott Rive Gauche Hotel features underground car parking and valet service. Limited parking is available at the daily “overnight” rate of €25. Reservations are suggested. Off-site parking is available nearby by the hour or by the day at a slightly less amount. It may be wise to use the excellent public transportation options in Paris so that you do not have to deal with parking fees and space availability.

DRIVING DIRECTIONS

PARkING


62


GETTING AROUND TOWN

Without a doubt, the Metro is the fastest and easiest mode of transportation in the city. With 16 lines going in every possible direction, you simply have to learn how to read the Metro map, buy tickets and maneuver through the stations. Happily, Metro sta-tions are easy to identify. Additionally, there is excellent bus service throughout Paris, although the bus stations are a bit harder to find.

The city is divided into “transportation zones” and most rates are based on travel either within one zone or between multiple zones. It isn’t as complicated as it sounds… most of the sites that you’ll want to see are in Zones 1-3.

You have many options for purchasing tickets on the Metro, bus, RER trains or trams. You can purchase 1) a one-way ticket each time you need one, 2) a book (carnet) of 10 tickets, 3) a Paris Visit card which is based on zones and number of days needed (valid for international travelers only), or 4) a Carte Orange which is a weekly (Monday-Sunday) or monthly (1st to end of month only) pass that does not allow “sliding” into another week or month.

Tickets can be purchased at all RER or Metro stations and most travel companies in Paris. It is possible to buy them online but be cautious and check references on these companies before completing your transaction.

There are many informative websites that will educate you about these modes of Paris transportation. Some of the best are:

http://www.tripadvisor.com/Travel-g187147-s303/ Paris:France:Public.Transportation.html

http://goparis.about.com/od/transportation/ss/Metro_and_Buses_4.htm

http://en.parisinfo.com/how-to-get-to-and-around-paris/ transports-in-paris-and-the-paris-region/public-transport

63

The 2014 NSREC Industrial Exhibits will feature the leading worldwide suppliers of radiation hardened products, related materials, services, and research and develop-ment. This will be an excellent opportunity for key suppliers, technical engineers and managers to meet and discuss the needs and solutions for electronics used in space vehicles, military electronics, and applications requiring radiation tolerance in harsh environments.

The 2014 NSREC Industrial Exhibits will be in the Foyer Atrium, Pont des Arts A, B and C, and Pont de Sully A and B rooms on Tuesday, Wednesday and Thursday. This is located on the Les Rives de Seine / The Banks of the River Seine Level 0. Conference breaks will be hosted in the Exhibit Area on Tuesday, Wednesday and Thursday along with light lunches (for registered attendees only). NSREC badges must be worn at all times.

Tuesday evening, the exhibitors will host the Industrial Exhibits Reception featur-ing complimentary drinks in the Exhibit Area along with light hors d’oeuvres in the Exhibit Area. The Reception is open to all NSREC attendees and their guests.

NOTE: Children under 16 must be accompanied by an adult in the Exhibit Area.

For more information, or to get on the waiting list for a booth, contact:

Dominique de Saint Roman Phone: +33 680 370 429Consultant Email: [email protected]

Odile Ronat Phone: 310-252-7139International Rectifier Email: [email protected]

Or visit the 2014 NSREC Industrial Exhibits web site: www.nsrec.com/exhibit.htm

Dominique de Saint Roman Industrial Exhibits Co-Chair

Industrial Exhibits

Odile Ronat Industrial Exhibits Co-Chair

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Date de création 18/10/2013Date de modification 29/01/2014

Niveau 0

5mm/m Print A3

Marriott Rive Gauche14 juillet 2014Conférence NSREC 2014

NSREC INDUSTRIAL ExHIBITS

MARRIOTT RIVE GAUCHE HOTEL LES RIVES DE SEINE / THE BANkS OF THE RIVER SEINE

LEVEL 0

ExHIBIT HALL HOURS

TUESDAy, JULy 15

10:00 AM – 5:00 PM 11:00 AM Morning BreAk

1:00 PM Light Lunch (for registered attendees only)

4:00 PM Afternoon BreAk

6:00 PM – 7:30 PM

recePtion

cocktAiLs

WEDNESDAy, JULy 16



THURSDAy, JULy 17



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Please check our web site (www.nsrec.com) for a current listing of companies exhibiting at 2014 NSREC.

ExHIBITORS

Industrial Exhibits

Organization Internet Site Booth 3d Plus www.3d-plus.com 15Aeroflex www.aeroflex.com/hirel 24-25Airbus defense & Space (France) www.airbusdefenceandspace.com 30Airbus defense & Space (Breman) www.airbusdefenceandspace.com 29Alter Technology Tuv nord www.altertechnology.com 45Analog devices www.analog.com 31APi Technologies Corp. micro.apitech.com 36Atmel nantes S.A.S. www.atmel.com 38-39BAe Systems www.rad750.com 43Belgian institute for Space Aeronomy (BirA-iASB) www.aeronomie.be 6CneS www.cnes.fr 50Crane Aerospace & electronics - interpoint www.craneae.com/interpoint 14e2V www.e2v.com 42experimental and Mathematical Physics Consultants (eMPC) www.empc.com 12Fraunhofer inT www.int.fraunhofer.de 28hiLevel Technology, inc. www.hilevel.com 9honeywell www.honeywellmicroelectronics.com 8hopewell designs, inc. www.hopewelldesigns.com 48international rectifier hirel.irf.com 17intersil www.intersil.com 20institute of Space device engineering www.tlisde.org 26-27iSde Vanderbilt www.isde.vanderbilt.edu 4isocom Limited www.isocom.uk.com 19ixFiber www.ixfiber.com 46J.L. Shepherd & Associates www.jlshepherd.com 40Linear Technology Corporation www.linear.com 33Maxwell Technologies www.maxwell.com 22MBdA www.mbdaps.com 13Microsemi www.microsemi.com 10Modular devices, inc. www.mdipower.com 23MS Kennedy Corp. www.mskennedy.com 37northrop Grumman Corporation www.northropgrumman.com 34Peregrine Semiconductor www.psemi.com 5robust Chip www.robustchip.com 16Chipir – a new neutron Single event Test Facility

www.isis.stfc.ac.uk/instruments/chipir/chipir8471.html 3

Seibersdorf Labor Gmbh www.seibersdorf-laboratories.at 41Silicon Space Technology / Jd instruments

www.siliconspacetech.comwww.jdinstruments.net 18

Silvaco www.silvaco.com 47SPeLS/nrnu MePhi www.spels.ru 7STMicroelectronics www.st.com 2Synopsys, inc. www.synopsys.com 32Telecommunication Systems www.tcsspace.com 49Texas A&M Cyclotron institute www.cyclotron.tamu.edu/ref 51Texas instruments www.ti.com 35Thales Communications www.thalescomminc.com 44TrAd www.trad.fr 21VPT, inc. www.vptpower.com 11xiA LLC www.xia.com 1

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REGISTRATION FEES (in Euros)

Late fee REQUIRED if payment received after June 13, 2014

Early LateIEEE Member *Short Course €280 €335 €________Technical Sessions €525 €630 €________

Non-IEEE MemberShort Course €355 €420 €________Technical Sessions €675 €800 €________

Full-Time Students who are IEEE Members *Short Course €130 €335 €________Technical Sessions €150 €630 €________

VAT ** IS INCLUDED IN THE ABOVE RATES . A tax breakdown will be included on your final receipt.

TOTAL AMOUNT AUTHORIzED: €________

CANCELLATIONSA €50 processing fee will be withheld from all refunds. due to advance financial commitments, refunds of conference registration fees requested after June 13, 2014, cannot be guaranteed. Consideration of requests for refunds will be processed after the conference. you must notify nSreC registration by e-mail at [email protected] or fax at 720-733-2046 by no later than June 13, 2014.

Mail or Fax this form and your remittance to:

IEEE NSREC REGISTRATIONP .O . Box 398

Castle Rock, CO 80104

Tel: 720-733-2003 Fax: 720-733-2046

2014 IEEE NSREC Technical Sessions andShort Course Registration Form

Name ______________________________________ Last Name First Name Middle Initial

Name to appear on badge _______________________

Company/Agency ______________________________

Address ____________________________________

Address ____________________________________

City _______________________________________

State/Province ________________________________

Zip or Postal Code ____________________________

Country ____________________________________

Telephone Number ____________________________

Fax Number _________________________________

E-mail Address ________________________________

IEEE Membership Number _____________

* To obtain the IEEE rates, the IEEE membership number must appear on this form.

SPECIAL FUNCTIONS I am an IEEE Young Professional and will attend the

IEEE Young Professionals Lunch on Wednesday, July 16

I plan to attend the Women in Engineering (WIE) Event on Thursday, July 17

** VAT IEEE International LLC is required to collect the applicable VAT for conference registration payments made by non-French companies (no French VAT number). French Law: Article 283-1 of the GCI (Code Général des Impôts).

If you work for a French company and would like to provide a VAT number so that the VAT may be “self-assessed,” then do not use this registration form. Contact the IEEE NSREC Registration office for a different registration form and additional instructions on how to register for the conference.

PAyMENT OF FEESPayment of conference registration fees must be in Euros via the following credit cards:

American Express Master Card

Discover Visa

Card No. ___________________________________

Expiration Date __________ Security Code _________

Name on card _______________________________

Cardholder Signature ___________________________________

Billing address ________________________________

__________________________________________

__________________________________________

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ACTIVITIES FEES (in Euros)Late fee REQUIRED if payment received after June 13, 2014

Number Total Early Late Attending Cost

Paris City Tour tuesday, July 15Adult (13 yrs+) €25.00 €30.00 ____ €______Child (3-12 yrs) €15.00 €20.00 ____ €______infant (0-2 yrs) €0.00 €0.00 ____ €______

Seine River Dinner Cruise Wednesday, July 16Adult (12 yrs+) €65.00 €75.00 ____ €______Child (0-11 yrs) €35.00 €40.00 ____ €______

Tour of Versailles thursday, July 17Adult (18 yrs+) €35.00 €40.00 ____ €______Child (3-17 yrs) €15.00 €20.00 ____ €______infant (0-2 yrs) €0.00 €0.00 ____ €______

Name ______________________________________ Last Name First Name Middle Initial

Name to appear on badge _______________________

Company/Agency ______________________________

Address ____________________________________

Address ____________________________________

City _______________________________________

State/Province ________________________________

Zip or Postal Code ____________________________

Country ____________________________________

Telephone Number ____________________________

Fax Number _________________________________

E-mail Address ________________________________

Please register any accompanying guest(s): List ages only for children who are under 21 years.

_________________________________________ Name Age

_________________________________________ City, State, Country

_________________________________________ Name Age


_________________________________________ Name Age


** VAT IEEE International LLC is required to collect the applicable VAT for conference registration payments made by non-French companies (no French VAT number). French Law: Article 283-1 of the GCI (Code Général des Impôts).

If you work for a French company and would like to provide a VAT number so that the VAT may be “self-assessed,” then do not use this registration form. Contact the IEEE NSREC Registration office for a different registration form and additional instructions on how to register for the conference.

CANCELLATIONSTo encourage advance registration for conference social activities, the nSreC will refund all activity fees for conference attendees and/or their companions who, for any reason, are unable to attend the conference. if your plans change after this form is submitted and you would like to request a refund, you must notify nSreC registration by e-mail at [email protected] or by fax at 720-733-2046 by no later than June 27, 2014.

Mail or Fax this form and your remittance to:

IEEE NSREC REGISTRATIONP .O . Box 398

Castle Rock, CO 80104

Tel: 720-733-2003 Fax: 720-733-2046

PAyMENT OF FEESPayment of conference registration fees must be in Euros via the following credit cards:

American Express Master Card

Discover Visa

Card No. ___________________________________

Expiration Date __________ Security Code _________

Name on card _______________________________

Cardholder Signature ___________________________________

Billing address ________________________________

__________________________________________

__________________________________________

2014 IEEE NSRECActivities Registration Form

VAT ** IS INCLUDED IN THE ABOVE RATES . A tax breakdown will be included on your final receipt.

TOTAL AMOUNT AUTHORIzED: €________

Paris is called “the City of Lights” and comes to mind immediately as one of the world’s most romantic and lovely cities to visit. A capital of the arts, Paris possesses a tremendous cultural richness from its 2000 year history and formidable heritage. With its monuments, museums, great buildings, and its famous characters, Paris never ceases to transport us through time and space. Stroll along the wonderful banks of the Seine river, walk around the artists’ village of Montmartre or explore the nearby Luxembourg gardens and you will see why! Paris is a world capital of gastronomy, and the iconic “French gastronomic meal” now has Unesco humanity heritage status. Plan to discover the French and Parisian art de vivre!

Children must be accompanied by an adult during all tours and social events.

All Companion Tours are based on a minimum number of participants. If that num-ber is not reached, the tour will be cancelled. In that case, you will be notified and your payment will be refunded.

Join your colleagues for complimentary refreshments in the Jardin du Luxembourg Rooms on the Marriott’s Level 3. This reception is open to all Short Course and Technical Session attendees and their registered guests as a great opportunity to meet new friends and renew old acquaintances. NSREC badges are required for entrance to the Registration Reception. The conference registration desk is open from 5:00 to 8:00 PM to obtain your badges.

Conference attendee companions are invited to meet the Local Arrangements Chair, Philippe Paillet, and to learn about the planned events for the week, as well as how to navigate the city of Paris to various sites of interest. This will be a chance to meet other companions, renew past acquaintances, and pick up maps and city guides. This orientation will be held in the St. Michel Room at the Marriott Rive Gauche on Level 2.

PARIS, FRANCE

SUNDAy, JULy 135:00 TO 7:00 PM

REGISTRATION RECEPTION

MONDAy, JULy 148:30 TO 9:30 AM

PARIS ORIENTATION

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“Bienvenue à Paris ! The summer is one of the best times to discover the city, so we hope you will enjoy the social program, and join us for our great diner cruise on the Seine river. May your visit be unforgettable!”

Philippe Paillet, CEA Local Arrangements Chairman

Social Program

© Paris Tourist Office - Photographer: Amélie Dupont

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MONDAy, JULy 14

BASTILLE DAy

TUESDAy, JULy 1510:00 AM TO 4:00 PM

PARIS CITy TOUR

Bastille Day is the name given in English-speaking countries to the French National Day, which is celebrated on July 14 each year. In France, it is formally called La Fête Nationale, and commemorates the beginning of the French Revolution with the Storming of the Bastille on the 14 July 1789. Celebrations are held all over France.

The July 14th military parade is one of the highpoints of the national holiday ceremo-nies. The parade passes down the Champs-Élysées from the Arc de Triomphe to the Place de la Concorde, where the President of the French Republic, his government and foreign ambassadors to France stand. This is a popular event in France, broadcast on French TV, and is the oldest and largest regular military parade in Europe.

At sundown, fireworks are usually launched in front of the Eiffel Tower. Families and friends gather around the Eiffel Tower, Montparnasse, and Saint Germain des Près for views of fireworks that dazzle the City of Light.

The night before Bastille Day in Paris, people from all across the city dress up in ele-gant costumes for music and dancing at the Bal du 14 Juillet. This massive party takes at the Place de la Bastille, where the iconic prison once stood.

A private coach will take you around the city, to some of the major sites of Paris. Your English-speaking guide will give historical and fun facts about the places you see and will help you learn your way around the city. Our tour will stop in Montmartre, in front of the famous stairs leading to the Sacré Coeur Basilica. You can either climb these stairs, or take the funicular that will lead you directly to the top - Metro tickets for the funicular (round trip) will be provided. Enjoy some free time in Montmartre, for lunch and shopping.

At the origin, Montmartre was outside Paris city limits, free of taxes and no doubt also due to the fact that the local nuns made wine, the hill quickly became a popu-lar drinking area. The area developed into a centre of free-wheeling and decadent entertainment at the end of the 19th and the beginning of the 20th centuries. In the popular cabaret the Moulin Rouge, and at Le Chat Noir, artists, singers and perform-ers regularly appeared including Yvette Guilbert, Marcelle Lender, Aristide Bruant, La Goulue, Georges Guibourg, Mistinguett, Fréhel, Jane Avril, Damia and others. Montmartre was the setting of several movies: “La Môme”, (La vie en rose) which elaborates on the life of famous French singer Edith Piaf and her times in the slums of Paris, and of “Amélie Poulain”, the story of a young Parisian woman determined to help the lives of others and find her true love, is set in an exaggeratedly quaint ver-sion of contemporary Montmartre. “Moulin Rouge!” was also set in Montmartre, the story of a young man who believes in truth, beauty, freedom, and love, and who falls in love with a famous courtesan.

Please meet in the Marriott lobby at 9:15 AM. Strollers can be taken on the bus. We suggest casual shoes and bring your water! Your return bus will pick you up at the same place where it left you, down the famous stairs of Montmartre, at 3:00 PM, to drive you back to the hotel.

Social Program

© Paris Tourist Office - Photographer: Jacques Lebar

Join us for the 2014 Industrial Exhibits Reception hosted by your NSREC exhibitors. NSREC attendees and their registered guests are invited to the La Seine Foyer to visit the booths. Drinks and light hors d’oeuvres will be available in the exhibit hall. NSREC attendees and registered guests must wear their badges at all times.

Note: Similar to 2013, the 2014 Industrial Exhibits Reception does not include dinner.

A special lunch will be held in the St. Germain des Pres Room (Level 2), for IEEE member attendees who are Young Professionals. This is an excellent opportunity for newer industry members to informally discuss radiation effects and to become bet-ter acquainted. This year, the Young Professionals lunch will include individuals representing IEEE, RESG, and NSREC committees for discussions of how to become involved in IEEE NPSS activities. For more information, contact Anthony Sanders, [email protected]. Note: You must sign up for this lunch on the confer-ence registration form or the online registration.

Is there a better way to discover Paris than from the Seine River? We are sure that you will enjoy seeing the City with a different perspective: on board an entirely glass-encased boat, you’ll be in touch with the secret of the city of lights, your eyes will sparkle as never before. This is a must-do, a cultural and very Parisian experience that is unique and must be shared!

The two biggest boats of Bateaux Parisiens, the Diamant (the Diamond) and the Onyx, have been booked for our Conference Social. They provide a 360° panoramic view, they glide close to the bridges and you feel that you could touch the buttresses of Notre Dame. Enjoy the finest moments of Paris during an extraordinary voyage.

Our conference social will start with a short bus ride to the foot of the Eiffel Tower, where boarding will take place for a voyage of discovery through the majestic heart of Paris. Please meet in the Marriott lobby at 7:00 PM. Strollers cannot be taken on the bus and boat. Your return pick up will be at the Pier, at 11:15 PM.

A seated dinner will be provided on the two boats. This is an excellent oppor-tunity to socialize with other conference attendees and their guests.

Warning: Space is limited by the total capacity of the boats. As this event is expected to be quite popu-lar, we strongly encourage you to book early so that you can be certain to enjoy this great experience.

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TUESDAy, JULy 156:00 TO 7:30 PM

LA SEINE FOyER

INDUSTRIAL ExHIBITS RECEPTION

WEDNESDAy JULy 161:00 TO 2:10 PM

IEEE yOUNG PROFESSIONALS

LUNCH

WEDNESDAy, JULy 167:00 TO 12:00 PM

CONFERENCE SOCIAL

SEINE DINNER CRUISE

Social Program

© Paris Tourist Office - Photographer: Amélie Dupont

Our tour will begin with a bus ride from the Marriott Rive Gauche, through the city of Paris, arriving in front of the Chateau de Versailles. A tour of the Castle will be led by official English-speaking guides, one per group of 30 persons. Once the tour of the Castle is over, you will have time to get lunch on your own, either in the old town nearby or in the Garden. You can then take some time to walk around the Garden’s trails or just sit and enjoy the views and sounds of nature. Please meet in the Marriott lobby at 8:45 AM. Strollers can be taken on the bus. We suggest casual shoes and bring your water! Your return pick up will be at the front of the Castle, where they left you at the beginning of the visit, at 2:15 PM.

The Château de Versailles is one of the most beautiful achievements of 18th-century French art. It has been on UNESCO’s World Heritage List for 30 years, and yet the site began as King Louis XIII’s hunting lodge before his son Louis XIV (also known as the “Sun King”) transformed and expanded it. He moved the court and govern-ment of France to Versailles in 1682, making it the seat of power until the French Revolution in 1789.

Since Louis XIV chose the site to build the palace we know today, it has been the symbol of royal absolutism and an embodiment of classical French art. In the 1670s Louis XIV built the Grand Apartments of the King and Queen, whose most emblem-atic achievement is the Hall of Mirrors designed by Mansart, where the king put on his most ostentatious display of royal power in order to impress visitors. The Chapel and Opera were built in the next century under Louis XV.

The château lost its standing as the official seat of power in 1789 but acquired a new role in the 19th century as the Museum of the History of France, which was founded at the behest of Louis-Philippe, who ascended to the throne in 1830. That is when many of the château’s rooms were taken over to house the new collections, which were added to until the early 20th century, tracing milestones in French his-tory. During your tour, you will actually see the Hall of Mirrors, the King’s Grand Apartments and the Museum of the History of France.

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THURSDAy, JULy 179:00 AM TO 3:00 PM

VERSAILLES CASTLE AND GARDENS

The PALACe

Social Program

Hall of Mirrors. Photo: Myrabella / Wikimedia Commons / CC-BY-SA-3.0

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From the central window of the Galerie des Glaces (Hall of mirrors), the visitor looks down on the grand perspective that leads the gaze from the Water Parterre to the hori-zon. This original perspective, which preceded the reign of Louis XIV, was developed and prolonged by the gardener André Le Nôtre by widening the Royal Path and dig-ging the Grand Canal. This vast perspective stretches from the façade of the Château de Versailles to the railings of the park.

In 1661, Louis XIV commissioned André Le Nôtre with the design and layout of the gardens of Versailles which, in his view, were just as important as the Château. The works were undertaken at the same time as those for the palace and took forty years to complete. Lastly, the King had all the projects submitted to him and wanted the “details of everything”.

The layout of the gardens required enormous work. Vast amounts of earth had to be shifted to lay out the flower beds, the Orangerie, the fountains and the Canal, where previously only woods, grasslands and marshes were. The earth was transported in wheelbarrows, the trees were conveyed by cart from all the provinces of France and thousands of men, sometimes entire regiments, took part in this vast enterprise.

Since 1992, the gardens have been gradually replanted, and after the devastating storm of December 1999, the work accelerated to such an extent that most sections have already been restored to their original appearance.

As in prior conferences, Dave Bushmire, our own certified aerobics instructor, will be conducting morning fitness classes. The classes will be held from 6:00 to 7:00 AM in Le Jardin des Plantes, Level 3 on Wednesday and Thursday.

To encourage advance registration for conference social activities, NSREC will refund all activity fees for conference attendees and/or their companions who, for any rea-son, are unable to attend the conference provided that notice is provided as follows. If your plans change after your Activities Registration form is submitted, simply request a refund by notifying NSREC Registration via fax or e-mail by no later than June 28. Fax: 720-733-2046. E-mail: [email protected].

Social Program

GArdenS And PArK oF The ChâTeAu:

A CoLoSSAL underTAKinG

AEROBICS

ACTIVITIES CANCELLATION POLICy

Paris is multifaceted and there are numerous ways of discovering it. Here are some suggestions.

Arguably the grandest building in the centre of Paris, the Louvre is famous for sev-eral things: its history as the main residence of the French monarchy (until it was replaced by Versailles in the late 17th century); its second life as the planet’s most celebrated art gallery; the wealth of masterpieces it contains – not least of them is Leonardo Da Vinci’s Mona Lisa and the mysterious ancient Greek sculpture of the Venus de Milo.

The Louvre Museum, former residence of the kings of France, has for two centu-ries been one of the biggest museums in the world. Its collections are spread over 8 departments: Near Eastern Antiquities, Islamic Art, Egyptian Antiquities, Greek, Etruscan and Roman Antiquities, Paintings, Sculptures, Decorative Arts, and Prints and Drawings dating from the Middle Ages to 1848.

The Louvre in figures: 35,000 works of art in 60,600 m² of rooms devoted to perma-nent collections, with 2,410 windows, 3,000 locks and 10,000 steps.

The Musée d’Orsay is an art gallery housed in the former Gare d’Orsay, a marvel-ous Beaux-Arts railway station, built between 1898 and 1900. The gallery holds predominantly French abstraction dating from 1848 to 1915, incorporating sketches, molds, furniture, and photography. Internationally renowned for its rich collection of impressionist art, the Musée d’Orsay also displays all western artistic creation between 1848 and 1914. Its collections represent all expressive forms, from painting to architecture, not forgetting sculpting, decorative arts and photography. And there is no doubt that you will be dazzled by the beauty of the place: a palace-like station, launched for the 1900 Exposition Universelle.

At the end of 2011, the museum reopened all of its entirely renovated spaces as well as some new rooms: an additional 400 m² for the Pavillon Amont, post-impressionist artists at the heart of the museum, the restructuring of the Galerie des Impressionists, a new space for temporary exhibitions, and a new aquatic decor in the Café des Hauteurs, designed by Brazilian designers, the Campana Brothers.

The Cathédrale Notre-Dame de Paris, a masterpiece of Gothic architecture, is the most visited monument in France. It was built in the Middle Ages, at the far end of the Île de la Cité. Work started in the 13th century and finished in the 15th century. Badly damaged during the French Revolution, the cathedral was restored in the 19th century by the architect, Viollet-le-Duc. Its many visitors come to admire its stained glass and rose windows, the towers, the steeple and the gargoyles. They can also discover the Notre-Dame treasury and try and climb the towers to enjoy a panoramic view of Paris. In 2013, Notre-Dame celebrated its 850th anniversary. For this occasion, the cathedral renewed its heritage with the arrival of eight new bells as well as a new great bell. On the cathedral’s parvis, a bronze star inscribed ‘zero kilometre’ indicates the centre of the country in terms of road distances.

The Eiffel Tower is located on the Champ de Mars in Paris. It was named after the engineer Gustave Eiffel, whose company designed and built the tower. Erected in 1889 as the entrance arch to the 1889 World’s Fair, it has become both a global cultural

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GENERAL INFORMATION

The LouVre MuSeuM

MuSée d’orSAy

LA CAThédrALe noTre-dAMe de PAriS

LA Tour eiFFeL

Local Activities

© Paris Tourist Office - Photographer: Jacques Lebar

© Paris Tourist Office - Photographer: Christian Boyer


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icon of France and one of the most recognizable structures in the world. The tower is the tallest structure in Paris and the most-visited paid monument in the world. The tower received its 250 millionth visitor in 2010.

The tower is 324 metres (1,063 ft) tall, about the same height as an 81-story building. During its construction, the Eiffel Tower surpassed the Washington Monument to assume the title of the tallest human-made structure in the world, a title it held for 41 years, until the Chrysler Building in New York City was built in 1930. Because of the addition of the antenna atop the Eiffel Tower in 1957, it is now taller than the Chrysler Building by 5.2 metres (17 ft). Not including broadcast antennae, it is the second-tallest structure in France, after the Millau Viaduc.

The tower has three levels for visitors, with restaurants on the first and second. The third level observatory’s upper platform is 276 m (906 ft) above the ground, the high-est accessible to the public in the European Union. Tickets can be purchased to climb by stairs or lift (elevator) to the first and second levels. The climb from ground level to the first level is over 300 steps, as is the walk from the first to the second level. Although there are stairs to the third and highest level, these are usually closed to the public and it is generally only accessible by lift.

The Palais Garnier (Opera House) was built from 1861 to 1875, and was originally called the Salle des Capucines because of its location on the Boulevard des Capucines in the 9th arrondissement of Paris. Soon enough, it became known as the “Palais Garnier” in recognition of its opulence and its architect, Charles Garnier. The the-atre is also often referred to as the Opéra Garnier, and historically was the primary home of the Paris Opera and its associated Ballet until 1989, when the Opéra Bastille opened. The Palais Garnier is now mainly used for ballet.

The Palais Garnier is probably the most famous opera house in the world, a true symbol of Paris. This is at least partly due to its use as the setting for Gaston Leroux’s 1910 novel “The Phantom of the Opera” and its subsequent adaptations in films and musical. Another contributing factor is that among the buildings constructed in Paris during the Second Empire, besides being the most expensive,[10] it has been described as the only one that is “unquestionably a masterpiece of the first rank.”

The Palais Garnier is a building of exceptional opulence. The style is monumental and considered typically Beaux-Arts style, with use of axial symmetry in plan, and exterior ornamentation. Its audience sits under a central chandelier that weighs more than six tons, and it has a huge stage with room to accommodate as many as 450 art-ists. It is decorated with very elaborate multicolored marble friezes, columns, and lav-ish statuary, many of which portray deities of Greek mythology.

The Avenue des Champs-Élysées is arguably one of the world’s most famous streets, and one of the most expensive strips of real estate in the world. Several French monuments are also on the street, including the Arc de Triomphe and the Place de la Concorde. The name is French for Elysian Fields, the place of the blessed dead in Greek mythology. According to a much used description, the Champs-Élysées is “la plus belle avenue du monde” (“the most beautiful avenue in the world”). It is part of a perspective starting from the Louvre’s Pyramid (including the Obelisque of Place de la Concorde, the Arc de Triomphe) to the Arch of La Défense. Between the Arc de Triomphe and Place de la Concorde, luxury stores and upscale famous restaurants can be found, together with Palaces, famous nightlife clubs (Lido, Queen,

Tour oF oPerA houSe“PALAiS GArnier”

AVenue deS ChAMPS-eLySéeS

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Local Activities

© Paris Tourist Office - Photographer: Stéphane Querbes

Opéra Garnier © Paris Tourist Office - Photographer: Marc Bertrand

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hôTeL nATionAL deS inVALideS

Le PAnThéon

LeS iLeS de LA CiTé eT SAinT-LouiS (LA CiTé And

SAinT LouiS iSLAndS)

etc…), museums and famous monuments. Fashion stores and high tech showrooms complete the scene, together with movie theatres and bar terraces. “Anything can be found on the Champs”, from race cars, dresses, lunch places, daily food, to records and perfumes… from dawn to dusk, almost 24/7.

In 1670, King Louis XIV decided to build the “Hôtel Royal des Invalides” for wounded homeless soldiers of its different wars. It was built between 1671 and 1676 by Libéral Bruant, and then by Jules Hardouin-Mansart and Robert de Cotte.

This is one of the most prestigious monuments in Paris. Nowadays, it still maintains its initial purpose but the building also hosts three museums (Army museum, “Plans-Reliefs” museum and Liberation Order museum), the tomb of Napoleon 1st designed in 1843, and two churches (the Dôme church and Saint-Louis-des-Invalides church).

A masterpiece created by Soufflot (1713-1780) and a former church, during the French Revolution the Panthéon became the burial place for famous French personalities. The inscription above the entrance reads AUX GRANDS HOMMES LA PATRIE RECONNAISSANTE (“To the great men, the grateful homeland”). The Nation acknowledges its great men by burying them in the Panthéon, therefore interment here is severely restricted and is allowed only by a parliamentary act for “National Heroes”. Similar high honours exist in Les Invalides for historical military leaders such as Napoléon, Turenne and Vauban.

72 famous personalities rest here, including Voltaire, Jean-Jacques Rousseau, Victor Hugo, Emile Zola, Jean Jaurès, Jean Moulin, André Malraux and Soufflot, its architect. Marie Curie is the only woman interred based on her own merits. The latest personal-ity to enter the Panthéon on 30 November 2002, was Alexandre Dumas (1802–1870), the author of The Three Musketeers and other famous novels. The coffin was draped in a blue-velvet cloth inscribed with the Musketeers’ motto: “Un pour tous, tous pour un” (“One for all, all for one”).

Restoration works are ongoing on the Dome of the Panthéon with access to the colon-nade closed since August 2012. The top parts of the monument should be accessible again starting in April 2014. The monument will remain open throughout the dura-tion of the works; visitors can access the naive and crypt as normal.

Ile de la Cité, once known as Lutetia, is the oldest settlement in Paris, and hosts more than its share of Paris sights: the Pont Neuf, the Pont de l’Archevêché and Notre Dame cathedral, to name only three of them. Its location right in the middle of Paris, with Châtelet to the north and Saint-Germain-des-Prés to the south, makes it the central crossroads of the city, which grew outwards from here. When you’ve finished visiting all the sights, take one last admiring look at the magnificent façade of Notre Dame, then stroll along the banks of the Seine and head east towards Ile Saint Louis: stop first on the bridge (Pont Saint Louis) to watch improvised concerts by wandering musicians, for whom this area is a prime performance venue. Then walk around to discover the quietness of large magnificent homes, a refuge for artists and poets. The island is also heaven for gourmets, with a profusion of restaurants, cafés, tea rooms, etc… It is also the location of famous Berthillon, a Paris landmark for ice-cream lovers!

Iles de la Cité and Saint Louis are also the perfect place for a riverside picnic. At night, the bridges are beautifully lit, and there is a feeling of midsummer magic.

Local Activities

© Paris Tourist Office - Photographer: Daniel Thierry

© Paris Tourist Office - Photographer: Daniel Thierry


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The most famous cabaret in the world! The Moulin Rouge was immortalized by Toulouse-Lautrec and was the cradle of the music hall with the famous Mistinguett. Since it opened in 1889, it has dazzled the whole world. Edith Piaf, Liza Minnelli, Frank Sinatra and Elton John … numerous French and international personalities have over the years become enamoured of this legendary cabaret!

The room is magnificently decorated in belle époque style and red velvet, with typical burlesque frescoes. A wonderful place to enjoy gourmet French food by the Maison Dalloyau, served with champagne - the official drink of the cabaret. All one’s senses are awakened as you enjoy your food and watch the show! Admire a troupe of 60 art-ists from all over the world who perform twice each evening in the revue ‘Féérie’, a show made up of four breathtaking tableaux: feathers, rhinestones, sequins, sparkling decor, acrobats, original music, international attractions ... not forgetting the fast-paced famous French cancan. An amazing night out to share with the family, friends or as a couple! The Moulin Rouge promises an unforgettable night!

Located on the Left bank of the Seine river, with its close proximity to the Sorbonne University, the Latin Quarter (Saint-Michel, Luxembourg, Saint Germain des Prés) is where students gather. At the origin in the XIIth century, professors and students used to speak in Latin language. This tradition got lost, but the name of the Quarter remained. Around the Sorbonne university, the Collège de France and other presti-gious high schools, one can still find numerous libraries, editors, and tiny cinemas for authors’ movies. Countless cafes can be also found, each with its own character. The Saint Michel Fountain is a good meeting point to start exploring the neighbourhood.

If you enjoyed the previous visits with an English-speaking guide, and wish to book another one for a private visit not listed here, these websites can be helpful:www.ilouvreparis.com/ www.coloratour.com/

Beneath their fabulous Art Nouveau glass domes, the Parisian department stores have become must-see monuments to rival the Eiffel Tower and Notre Dame for most visitors. All together, they are a sparkling reflection of Paris in a concentrated form, where all your shopping desires can be granted.

Les Grands Magasins:16 - 40 boulevard Haussmann 75009 Paris Monday-Saturday, 9:30 AM - 8:00 PM; open until 9:00 PM on Thursday.

Le Bon Marché24 rue de Sèvres 75007 Paris Monday - Saturday, 10:00 AM - 8:00 PM; open until 9:00 PM on Thursday and Friday.

Beaugrenelle Shopping Center12 Rue Linois, 75015 ParisMonday - Saturday, 10:00 AM - 9:00 PM; open until 10:00 PM on Thursday. The res-taurants and the movie theater open Monday - Sunday, 10:00 AM - midnight.

The weather in Paris in July can be warm or cold, so please plan to bring jackets along with you. Temperatures are usually around 20-25° C (68-77° F), but occasional storms can be expected.

MouLin rouGe

Le QuArTier LATin (The LATin QuArTer)

Guided TourS

ShoPPinG

WEATHER AND CLOTHING

Local Activities

© Paris Tourist Office - Photographer: José Serur Yedid

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General ChairRobert EcoffetCNES+33 561 281 [email protected]

Technical ProgramVéronique Ferlet-CavroisESA/ESTEC+31 715 656 [email protected]

Local ArrangementsPhilippe PailletCEA+33 169 265 [email protected]

Short CourseFrédéric SaignéUniversité Montpellier 2+33 467 670 357frederic.saigne@ ies.univ-montp2.fr

PublicityTeresa [email protected]

Industrial ExhibitsOdile RonatInternational [email protected]

Industrial ExhibitsDominique de Saint RomanConsultant+33 680 370 [email protected]

AwardsRobert ReedISDE/[email protected]

2014 Conference Committee

FinanceChristian ChatryTRAD+33 561 009 [email protected]

FinanceSteve McClureNASA/JPL818-269-5426Steven.s.mcclure@ jpl.nasa.gov

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Official Reviewers

James Adams, University of Alabama in Huntsville

Teresa Álvarez-Alonso, INTA

Tony Amort, The Boeing Company

Jean-Luc Autran, Aix-Marseille University

Marta Bagatin, University of Padova

Peter Beck, Seibersdorf Laboratories

Guy Berger, Osmoz Consulting

Bharat Bhuva, Vanderbilt University

John Bird, Ball Aerospace

Jeff Black, Sandia National Laboratories

Ewart Blackmore, TRIUMF

Cesar Boatella-Polo, ESA

Sebastien Bourdarie, ONERA

Markus Brugger, CERN

Steve Buchner, NRL

Manuel Cabanas-Holmen, The Boeing Company

Michael Campola, NASA/GSFC

David M. Cardoza, The Aerospace Corporation

Megan Casey, NASA/GSFC

Dakai Chen, NASA/GSFC

Xiao Jie Chen, RMD Inc.

Kay Chestnut, The Boeing Company

Tom Clatworthy, Surrey Satellite Technology Ltd.

Daniel Clymer, Lockheed Martin Space Systems

Lew Cohn, NRO

Cory Cress, NRL

David Dangla, CNES

Frederic Darracq, IMS

Paul Dressendorfer, Sandia National Laboratories (Retired)

Clive Dyer, CSDRadConsultancy

Art Edwards, Air Force Research Laboratory

Farah El Mamouni, Microsemi

Hugh Evans, ESA

Agustin Fernandez-Leon, ESA

Dan Fleetwood, Vanderbilt University

Joseph Friebele, NRL

Matthew Gadlage, NAVSEA Crane

Marc Gaillardin, CEA

Kenneth Galloway, Vanderbilt University

Greg Ginet, MIT Lincoln Laboratory

Sylvain Girard, Université de Saint-Etienne

Maximilien Glorieux, STMicroelectronics

Vincent Goiffon, ISAE

Patricia Goncalves, LIP

Michael Gordon, IBM

Jerry Gorelick, The Boeing Company

Thomas Granlund, Saab Avionics AB

Kai Grürmann, IDA

Steve Guertin, NASA/JPL

Nadim Haddad, BAE Systems (Retired)

Craig Hafer, Aeroflex

Wojtek Hajdas, PSI

Joel Hatch, Ohio State University

Dave Hiemstra, MDA Corporation

Kazuyuki Hirose, ISAS/JAXA

Harry Hjalmarson, Sandia National Laboratories

Stefan Höffgen, Fraunhofer Institute

Lee Hoffmann, Honeywell International

Tim Holmann, Vanderbilt University

Christophe Inguimbert, ONERA

Srikanth Jagannathan, Freescale Semiconductor

Jeff Kauppila, Vanderbilt University

Andrew Kelly, BAE Systems

Heikki Kettunen, University of Jyväsklä

Mike King, Vanderbilt University

Rokutaro Koga, The Aerospace Corporation

Marian Kravitz, Raytheon

Kirby Kruckmeyer, Texas Instruments

Ken Label, NASA/GSFC

Ron Lacoe, The Aerospace Corporation

Ray Ladbury, NASA/GSFC

Damien Lambert, Nucletudes

Jean-Marie Lauenstein, NASA/GSFC

Mark Law, University of Florida

Reed Lawrence, BAE Systems

Pat Lenahan, Pennsylvania State University

Jean-Luc Leray, CEA

Austin Lesea, Xilinx

Gary Lum, Lockheed Martin

Florence Malou, CNES

Paul Marshall, NASA/GSFC

John Martinez, Sandia National Laboratories

Donald Mayer, The Aerospace Corporation

Michael Mclain, Sandia National Laboratories

Dale McMorrow, NRL

Julien Mekki, CERN

David Merodio Codinachs, ESA

Roberto Monreal, Southwest Research Institute

Steven Moss, The Aerospace Corporation

Balaji Narasimham, Broadcom

Chris Nicklaw, L3 Communications

Paul O’Brien, The Aerospace Corporation

Tim Oldham, Ball Aerospace

Shinobu Onoda, Japan Atomic Energy Agency

Philippe Paillet, CEA

Anthony Pang, The Boeing Company

Ron Pease, RLP Research

Andrew Pineda, Air Force Research Laboratory

Christian Poivey, ESA

Vincent Pouget, Université Montpellier 2

Heather Quinn, LANL

Melanie Raine, CEA

Paolo Rech, UFRGS, Universidade Federal do Rio Grande do Sul

James Reed, DTRA

Nicolas Roche, NRL

Kenneth Rodbell, IBM

Hermann Rufenacht, MDA Corporation

Ivan Sanchez Esqueda, University of Southern California

Justin Schaefer, SEAKR Engineering

Leif Scheick, NASA/JPL

Hagen Schmidt, Astrium Satellites

Ron Schrimpf, Vanderbilt University

Andreas Schüttauf, Astrium ST

James Schwank, Sandia National Laboratories

Katherine Scott, The Boeing Company

Sarah Seif El Nasr, CERN

Norbert Seifert, Intel

Richard Sharp, Aeroflex

Xiao Shen, Vanderbilt University

Eddy Simoen, IMEC

Giovanni Spiezia, CERN

Joseph Srour, The Aerospace Corporation

Victoria Sullivan, SEAKR Engineering

David Sunderland, The Boeing Company

Gary Swift, Swift Engineering and Radiation Services, LLC

Dennis Thompson, Exelis Geospatial Systems

Alan Tipton, Draper

Thomas L. Turflinger, The Aerospace Corporation

Blair Tuttle, Pennsylvania State University

Taiki Uemura, Fujitsu

Slawosz Uznanski, CERN

Nick Van Vonno, Intersil

Bert Vermeire, Space Micro

Massimo Violante, Politecnico di Torino

Cedric Virmontois, CNES

Gyorgy Vizkelethy, Sandia National Laboratories

Stephanie Weeden-Wright, Vanderbilt University

Roland Weigand, ESA

Shi-Jie Wen, Cisco Systems

Jerry Wert, The Boeing Company

Mike Wirthlin, Brigham Young University

Rick Wong, Cisco Systems

Frankie Wong, Space Systems Loral

Rick Wong, Cisco

Mike Xapsos, NASA/GSFC

Jun Yao, NAIST: NARA Instiute of Science and Technology

Ali Zadeh, ESA

Stephanie Zajac, The Boeing Company

Alfio Zanchi, Aeroflex

En Xia Zhang, Vanderbilt University

Xuan Zhang, Vanderbilt University

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Executive ChairMarty ShaneyfeltSandia National LaboratoriesP.O. Box 5800, MS-1083Albuquerque, NM [email protected](Term expires: 7/15)

Executive Vice-ChairAllan JohnstonJ-K Associates308 Marine DriveCoupeville, WA [email protected](Term expires: 7/15)

Past ChairDan Fleetwood Vanderbilt University EECS DepartmentVU Station B, #350092 2301 Vanderbilt PlaceNashville, TN [email protected](Term expires: 7/15)

Senior Member-at-LargeNick van VonnoIntersil Corporation1650 Robert J. Conlan BlvdPalm Bay, FL [email protected](Term expires: 7/14)

Member-at-LargeGary LumLockheed Martin Space Systems Company1111 Lockheed Martin WayOrgn 70B0S, Bldg 157Sunnyvale, CA 94088408-756-0120 [email protected](Term expires: 7/15)

Junior Member-at-LargeSylvain GirardUniversité de Saint-Etienne18 rue Pr. Benoit LaurasSaint-Etienne, France+33 477 915 [email protected](Term expires: 7/16)

SecretaryPascale GoukerMIT Lincoln Laboratory244 Wood StRoom L-304Lexington, MA [email protected](Term expires: 7/15)

Vice-Chair, PublicationsJim SchwankSandia National LaboratoriesPO Box 5800, MS-1083 Albuquerque, NM 87185-1083 [email protected](Term expires: 7/15)

Vice-Chair, PublicityTeresa FarrisAeroflex4350 Centennial Blvd.Colorado Springs, CO [email protected](Term expires: 7/15)

Special Finance AssignmentJohn StoneSouthwest Research Institute6220 Culebra RoadBldg 178San Antonio, TX [email protected](Term expires: 7/15)

Special Publications AssignmentPaul V. DressendorferSandia National Laboratories (retired)11509 Paseo del Oso, NE, Albuquerque, NM [email protected]

Vice-Chair, 2014 ConferenceRobert EcoffetDCT/AQ/ECCNES - Toulouse Space Center18 Avenue Edouard Belin31401 Toulouse Cedex 4, France+33 561 281 [email protected]

Vice-Chair, 2015 ConferenceMike XapsosNASA Goddard Space Flight CenterGreenbelt Rd, Code 561.4Greenbelt, MD [email protected]

Vice-Chair, 2016 ConferenceNPSS AdCom MemberRobert ReedVanderbilt University1025 16th Ave, Suite 200Nashville, TN [email protected](AdCom Term expires: 12/14)

Vice-Chair, 2017 ConferenceVéronique Ferlet-Cavrois ESA/ESTECKeplerlaan 12200 AG Noordwijk The Netherlands+31 715 656 038 [email protected]

NPSS AdCom MemberKay ChesnutBoeing Space and Intelligence SystemsW/S24/D572 PO Box 92919 Los Angeles, CA 90009 [email protected](Term expires: 12/15)

NPSS AdCom MemberDave HiemstraMDA9445 Airport RdBrampton, ON L6S [email protected](Term expires: 12/17)

RADECS LiaisonVéronique Ferlet-Cavrois ESA/ESTECKeplerlaan 12200 AG Noordwijk The Netherlands+31 715 656 038 [email protected](Term expires: 7/15)

Radiation Effects Steering Group

The 2015 IEEE Nuclear and Space Radiation Effects Conference will be held July 13 - 17 at the Marriott Copley Place, Boston, Massachusetts. The conference features a technical program consisting of eight to ten technical sessions of contributed papers describing the latest observations in radiation effects, a Short Course on radiation effects offered on July 13, a Radiation Effects Data Workshop, and an Industrial Exhibit. The technical program includes oral and poster sessions.

Papers on nuclear and space radiation effects on electronic and photonic materials, devices, circuits, sensors, and systems, as well as semiconductor processing technology and design techniques for producing radiation-tolerant (hardened) devices and integrated circuits, will be presented at this meeting of engineers, scientists, and managers. International participation is strongly encouraged.

We are soliciting papers describing significant new findings in the following or related areas:

Basic Mechanisms of Radiation Effects in Electronic Materials and Devices■ Single Event Charge Collection Phenomena and Mechanisms■ Radiation Transport, Energy Deposition and Dosimetry■ Ionizing Radiation Effects■ Materials and Device Effects■ Displacement Damage■ Processing-Induced Radiation Effects

Radiation Effects on Electronic and Photonic Devices and Circuits■ Single Event Effects■ MOS, Bipolar and Advanced Technologies■ Isolation Technologies, such as SOI and SOS■ Optoelectronic and Optical Devices and Systems■ Methods for Hardened Design and Manufacturing■ Modeling of Devices, Circuits and Systems■ Cryogenic or High Temperature Effects■ Novel Device Structures, such as MEMS and Nanotechnologies

Space, Atmospheric, and Terrestrial Radiation Effects■ Characterization and Modeling of Radiation Environments■ Space Weather Events and Effects■ Spacecraft Charging■ Predicting and Verifying Soft Error Rates (SER)

Hardness Assurance Technology and Testing■ New Testing Techniques, Guidelines and Hardness Assurance Methodology■ Unique Radiation Exposure Facilities or Novel Instrumentation Methods■ Dosimetry

New Developments of Interest to the Radiation Effects Community

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2015 IEEE NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCEShort Course and Radiation Effects Data Workshop

July 13 - 17, 2015Marriott Copley PlaceBoston, Massachusetts

ANNOUNCEMENT and FIRST CALL FOR PAPERS

PAPER SUMMARy DEADLINE: FEBRUARy 6, 2015

www .nsrec .com

Sponsored By

IEEE/NPSS Radiation Effects Committee

Supported By

3D PlusAeroflexAtmelBAE SystemsBoeingCNESHoneywellIntersil CorporationMicrosemiNorthrop GrummanPeregrine Semiconductor CorporationSouthwest Research InstituteTexas Instruments

Conference Committee

General ChairmanMike Xapsos, NASA Goddard Space Flight [email protected]

Technical ProgramRon Lacoe, Aerospace [email protected]

Local ArrangementsHeather Quinn, Los Alamos National [email protected]

Short CourseTim Oldham, Ball [email protected]

PublicityTeresa Farris, [email protected]

Finance ChairJonathan Pellish, NASA/[email protected]

AwardsAlessandro Paccagnella, DEI–Padova [email protected]

Industrial Exhibits ChairDavid Hansen, Maxwell Technologies, [email protected]

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PROCEDURE FOR SUBMITTING SUMMARIESAuthors must conform to the following requirements:

1. Prepare a single Adobe Acrobat file consisting of a cover page and an informa-tive two to four page summary describing results appropriate for 12-minute oral or a poster presentation. The cover page must provide an abstract no longer than 35 words, the title, name and company affiliation of the authors, and company address (city, state, country). Identify the author present-ing the paper and provide telephone, fax, and email address. The summary must include sufficient detail about the work to permit a meaningful techni-cal review. In the summary, clearly indicate (a) the purpose of your work, (b) significant new results with supporting technical material, and (c) how your work advances the state of the art. Show key references to other related work. The summary must be no less than two and no more than four pages in length, including figures and tables. All figures and tables must be large enough to be clearly read. Note that this is more than an abstract, but do not exceed four pages.

2. Prepare your summary in single-column or IEEE TNS standard two-column format, using 11 point or greater font size, formatted for either U.S. Standard (8.5 x 11 inch) or A4 (21 x 29.7 cm) page layout, with 1 inch (2.5 cm) margins on all four sides.

3. Obtain all corporate, sponsor, and government approvals and releases necessary for presenting your paper at an open attendance international meeting.

4. Summary submission is electronic only, through www.nsrec.com. The submission process consists of entering the paper title, author(s) and affiliation(s), and an abstract no longer than 35 words. Authors are prompted to state their preference for presentation (oral, poster, or data workshop poster) and for session. Details of the submission process may be found at www.nsrec.com. The final category of all papers will be determined by the Technical Program Committee, which is responsible for selecting final papers from initial submissions.

Papers accepted for oral or poster presentation at the technical program are expected to be submitted for publication in the IEEE Transactions on Nuclear Science (December 2015). Selection for this issue will be based on a separate submission of a com-plete paper. These papers will be subject to the standard full peer review given all papers submitted to the IEEE Transactions on Nuclear Science. Further information will be sent to prospective authors upon acceptance of their NSREC summary. It is not necessary to be an IEEE member to present a paper or attend the NSREC. However, we encourage IEEE and NPSS mem-bership of all NSREC participants.

RADIATION EFFECTS DATA WORkSHOPThe Radiation Effects Data Workshop is a forum for papers on radiation effects data on electronic devices and systems. Workshop papers are intended to provide radiation response data to scientists and engineers who use electronic devices in a radiation environment, and for designers of radiation-hardened systems. Papers describing new simulation or radiation facilities are also welcomed. The procedure for submitting a summary to the Workshop is identical to the procedure for submitting NSREC summaries. Radiation Effects Data Workshop papers will be published in a Workshop Record and are not candidates for publication in the Conference issue of the IEEE Transactions on Nuclear Science.

BOSTON, MASSACHUSETTSBoston is one of the oldest cities in the United States and is a unique combination of historic and modern sites and green open areas. As the center of the American Revolution, the city is filled with history highlighting its role in American indepen-dence. Boston is one of the most walkable American cities, allowing for a leisurely stroll through areas such as the Back Bay and the Esplanade Park that borders the Charles River. It is also the home to many premiere colleges and universities, muse-ums and shops that are perfect for exploring.

The Boston Marriott Copley Place, located in the historic Back Bay area of the city, is the site for the NSREC. In addition to the hotel amenities it is connected to two major shopping destinations with over 200 shops and restaurants all via climate controlled walkways. It is within walking distance of the Skywalk Observatory, Museum of Fine Arts, Fenway Park – home of the Red Sox, the Theater District and famous Newbury Street with its shopping and outdoor dining. There are also two subway sta-tions nearby for a cost effective way to see the city.

Summaries must be received by February 6, 2015

Detailed submission and formatting instructions will be available after

January 1, 2015 at www.nsrec.com

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Le Moulin Rouge© Paris Tourist Office - Photographer : David Lefranc

Place de la Concorde© Paris Tourist Office - Photographer : Amélie Dupont

Arc de Triomphe© Paris Tourist Office - Photographer : Jacques Lebar

Jardin de Luxembourg © Paris Tourist Office - Photographer : David Lefranc

Paris

Moscow BremenMiamiSan

FranciscoLas

Vegas

Boston PortlandBiarritz OxfordSevilla

www.nsrec.com © Paris Tourist Office - Photographer : Stéphanie Rivoal

Documents

July 14 - 18, 2014 Marriott Rive Gauche Paris, Franceieee-npss.org/wp-content/uploads/2014/03/2014-NSREC.pdfLES QUARTIERS RIVE gAUCHE / THE LEfT bANk AREAS LEVEL 2 A/V PREVIEW La Sorbonne